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Renesas 71V016SA12PHG8
- Part No.:
- 71V016SA12PHG8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
71V016SA12PHG8.pdf
- Description:
- IC SRAM 1MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:3,469
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Product details
Overview
71V016SA12PHG8 from Renesas Electronics is a 64K × 16-bit (1 Mbit), 3.3 V asynchronous CMOS static RAM with 12 ns access time, industrial temperature range (–40°C to +85°C), LVTTL-compatible I/O, and byte-enable control for embedded memory subsystems in networking controllers and industrial PLCs.
For engineers reviewing the 71V016SA12PHG8 datasheet, 71V016SA12PHG8 pinout, 71V016SA12PHG8 application, or 71V016SA12PHG8 equivalent, this device supports high-speed read/write cycles without refresh, offers dual-byte enable (BHE/BLE), and delivers stable operation under full industrial thermal stress with single-supply simplicity.
Technical Context
This device implements fully static asynchronous architecture-no clocks or refresh required-and uses high-reliability CMOS process technology optimized for low-latency memory access. Its address decoding, sense amplifiers, and bidirectional I/O drivers are all designed for deterministic timing across commercial and industrial grades.
The 71V016SA12PHG8 supports three independent write enable modes: chip-select-controlled, output-enable-controlled, and byte-enable-controlled, each with defined setup/hold and pulse-width requirements. All timing parameters-including tAA = 12 ns, tRC = 12 ns, and tOE = 6 ns-are guaranteed over –40°C to +85°C at VDD = 3.15–3.6 V.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 64K × 16-bit (1,048,576-bit total); enables word-aligned data transfers without software bit-shifting |
| Access Time (tAA) | 12 ns max; guarantees valid data on I/O pins within 12 ns of stable address and CS/OE assertion |
| Supply Voltage | 3.15–3.6 V; compatible with standard 3.3 V logic rails and tolerant of typical board-level ripple |
| Operating Temperature | –40°C to +85°C; qualified for use in uncontrolled industrial environments without derating |
| I/O Interface | LVTTL-compatible; interfaces directly with 3.3 V microcontrollers, FPGAs, and ASICs without level shifters |
| Byte Enable Control | Dedicated BHE and BLE inputs; allows independent 8-bit writes to upper/lower bytes without masking logic |
| Power Consumption | ISB1 = 10 µA max in full standby; enables ultra-low-power sleep states in battery-backed systems |
Pinout & Package
71V016SA12PHG8 is packaged in a 44-pin Plastic TSOP Type II (PHG44) with JEDEC-standard footprint and 0.8 mm lead pitch. The package supports reflow soldering and provides mechanical robustness for vibration-prone industrial applications.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A15 | Address Inputs | 16-bit address bus; selects one of 64K memory locations; latched on CS transition |
| CS | Chip Select | Active-low enable; places device in active or high-Z state; controls tACS timing path |
| OE | Output Enable | Active-low; gates output drivers; tOE = 6 ns max ensures fast read turnaround |
| WE | Write Enable | Active-low; initiates write cycle; tWP = 8 ns min defines minimum pulse width for reliable write |
| BHE | High-Byte Enable | Active-low; enables I/O8–I/O15 during write/read; isolates upper byte when deasserted |
| BLE | Low-Byte Enable | Active-low; enables I/O0–I/O7 during write/read; isolates lower byte when deasserted |
| I/O0–I/O15 | Bidirectional Data | 16-bit LVTTL I/O bus; direction controlled by WE/CS/OE state per truth table |
| VDD | Power Supply | +3.3 V supply; decoupling required within 10 mm of pins E4/E5 for noise immunity |
| VSS | Ground | Signal ground reference; requires low-inductance connection to system ground plane |
Key Features
| Feature | Design Value |
|---|---|
| Asynchronous Static Operation | No clock, no refresh, no wait states-simplifies timing-critical controller designs and reduces FPGA resource usage |
| Byte-Selectable Write | Independent BHE/BLE control eliminates need for external byte-mask logic or glue logic in 8-bit peripheral interfacing |
| Industrial Temperature Support | Guaranteed 12 ns performance across –40°C to +85°C enables deployment in motor drives, factory automation, and outdoor telecom equipment |
| Low-Standby Current | ISB1 = 10 µA max ensures minimal power draw during system sleep-critical for battery-buffered SRAM retention |
| LVTTL Compatibility | VIH = 2.0 V min / VIL = 0.8 V max ensures interoperability with legacy 3.3 V logic families without interface translation |
Applications
| Industrial PLC Memory Buffer | Network Packet Buffer |
|---|---|
Use Scenario: Real-time I/O data buffering in programmable logic controllers where deterministic latency and thermal resilience are mandatory. IC Role / Device Role / Timing Role: Asynchronous SRAM providing zero-wait-state read/write access to CPU and fieldbus interface logic. Use Value: 12 ns tAA and industrial temp rating ensure consistent response time across ambient shifts in factory-floor cabinets. |
Use Scenario: Temporary storage of Ethernet frames in switch fabric controllers before forwarding or classification. IC Role / Device Role / Timing Role: High-speed packet buffer supporting bursty 10/100 Mbps traffic with byte-granular write control. Use Value: Dual BHE/BLE enables efficient partial-frame updates without full-word overwrites, reducing bus contention. |
| Medical Imaging Frame Store | Test Equipment Data Capture |
Use Scenario: Intermediate frame storage in portable ultrasound or X-ray digitizers requiring radiation-tolerant, non-refreshing memory. IC Role / Device Role / Timing Role: Off-CPU memory bank capturing sensor-synchronized image lines at up to 50 MHz effective throughput. Use Value: 3.3 V single supply and low ISB1 support compact, low-noise power design essential in battery-powered diagnostic tools. |
Use Scenario: High-fidelity waveform capture in automated test equipment where signal integrity and timing repeatability are critical. IC Role / Device Role / Timing Role: Acquisition buffer synchronizing ADC samples with trigger events using precise tAS = 0 ns setup requirement. Use Value: tOH = 4 ns hold time and tDH = 0 ns data hold guarantee glitch-free sampling at maximum rated speed. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed asynchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62167EV30LL-45ZSXI | 45 ns access time; 512K × 16 organization; 2.2–3.6 V supply; supports deeper sleep mode (ISB = 1 µA) | Lower speed but higher density and wider voltage range; suited for cost-sensitive, lower-bandwidth systems | Select when longer access time is acceptable and extended voltage tolerance or ultra-low standby current is prioritized over speed. |
| AS6C1008-12TIN | 12 ns access time; 128K × 8 organization; 2.7–3.6 V supply; no byte-enable pins (single OE/WE only) | Same speed grade but narrower 8-bit bus and no BHE/BLE; requires external logic for byte masking in 16-bit systems | Select only if system architecture uses 8-bit data paths or can accommodate external byte-selection circuitry. |
Compared with CY62167EV30LL-45ZSXI and AS6C1008-12TIN, the 71V016SA12PHG8 uniquely combines 12 ns speed, true 16-bit bus width, integrated BHE/BLE, and industrial-grade thermal qualification-making it optimal for space-constrained, high-throughput embedded controllers needing deterministic timing and minimal external components.
Availability
71V016SA12PHG8 is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, medical imaging, and test equipment requiring stable component supply across long production lifecycles.
Supply support for 71V016SA12PHG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering trusted embedded solutions for automotive, industrial, infrastructure, and IoT applications.
The 71V016SA12PHG8 belongs to Renesas' legacy high-speed asynchronous SRAM product line, engineered for deterministic, low-latency memory interfacing in real-time control and data acquisition systems.
FAQ
What is the maximum operating frequency supported by the 71V016SA12PHG8?
The 71V016SA12PHG8 does not operate on a clock; it is an asynchronous SRAM. Its maximum effective throughput is governed by its 12 ns access time (tAA) and 12 ns cycle time (tRC), enabling up to ~83 MHz random-access operation in ideal conditions. Actual system bandwidth depends on bus protocol overhead and controller timing margins.
Does the 71V016SA12PHG8 require external refresh circuitry?
No-the 71V016SA12PHG8 is a fully static RAM and requires no refresh cycles or external refresh circuitry. Its internal latches retain data indefinitely as long as VDD remains within specification and CS is held high during standby, making it ideal for simple, low-complexity memory subsystems.
Can the 71V016SA12PHG8 be used with a 5 V microcontroller interface?
No-the 71V016SA12PHG8 is strictly a 3.3 V LVTTL device with VIH = 2.0 V min and VIL = 0.8 V max. Direct connection to 5 V logic violates absolute maximum input voltage ratings (VIN ≤ VDD + 0.5 V = 4.1 V). Level-shifting circuitry is required for safe 5 V interface compatibility.
What is the function of the BHE and BLE pins on the 71V016SA12PHG8?
BHE (High-Byte Enable) and BLE (Low-Byte Enable) are active-low inputs that independently gate the upper (I/O8–I/O15) and lower (I/O0–I/O7) data bytes during read and write operations. When asserted, they allow selective 8-bit access without affecting the opposite byte-reducing bus traffic and eliminating need for external byte-mask logic.
Is the 71V016SA12PHG8 RoHS compliant and halogen-free?
Yes-the 71V016SA12PHG8 is a green part (per ordering code suffix "G") and complies with RoHS Directive 2011/65/EU and JEDEC JS709 standards for halogen-free materials. It contains no lead, mercury, cadmium, hexavalent chromium, PBB, or PBDE, and meets Renesas' environmental compliance requirements for industrial use.
71V016SA12PHG8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 1Mbit
- Memory Organization:
- 64K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 12ns
- Access Time:
- 12 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
71V016SA12PHG8 FAQ
1.How can I place an order for 71V016SA12PHG8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V016SA12PHG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V016SA12PHG8 reliable?
The price and inventory of 71V016SA12PHG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V016SA12PHG8 is usually 5 days.
3.What payment methods are accepted for 71V016SA12PHG8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V016SA12PHG8 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V016SA12PHG8?
71V016SA12PHG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V016SA12PHG8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V016SA12PHG8?
For technical support, including 71V016SA12PHG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V016SA12PHG8 requirements.
6.How does Aetrix verify that 71V016SA12PHG8 is sourced from the original manufacturer or authorized distributors?
All 71V016SA12PHG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V016SA12PHG8 meets industry standards.
7.What is the process for return or replacement of 71V016SA12PHG8?
All 71V016SA12PHG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V016SA12PHG8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V016SA12PHG8 part is unused and in its original packaging.
Return procedure for 71V016SA12PHG8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V016SA12PHG8 Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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24LC01BT-I/OT
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M24C02-FMC6TG
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
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AT24C04C-SSHM-T
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24LC01BT-I/SN
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24AA02UIDT-I/OT
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AT24C08C-STUM-T
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