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Renesas 71V016SA12PHGI8
- Part No.:
- 71V016SA12PHGI8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
71V016SA12PHGI8.pdf
- Description:
- IC SRAM 1MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:2,907
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Product details
Overview
71V016SA12PHGI8 from Renesas Electronics is a 3.3V, 1-Megabit (64K × 16) high-speed CMOS static RAM with 12 ns access time, industrial temperature range (–40°C to +85°C), LVTTL-compatible I/O, and dual byte enable for selective 8-bit writes. It operates asynchronously without clocks or refresh and is used in real-time embedded controllers requiring deterministic memory access.
For engineers reviewing the 71V016SA12PHGI8 datasheet, 71V016SA12PHGI8 pinout, 71V016SA12PHGI8 application, or 71V016SA12PHGI8 equivalent, key selection criteria include tAA ≤ 12 ns, industrial-grade reliability, 44-pin TSOP-II package compatibility, byte-selectable write capability, and low dynamic standby current (ISB = 45 mA max).
Technical Context
This device implements fully static asynchronous architecture-no clock, no refresh, no hidden timing dependencies. All control inputs (CS, OE, WE, BHE, BLE) are edge-agnostic and sampled on stable levels, enabling seamless integration into legacy bus systems and microcontroller memory interfaces.
It supports three independent write modes: full-word (WE active with both BHE/ble low), high-byte only (BHE low, BLE high), and low-byte only (BLE low, BHE high), each with dedicated timing parameters (tBE, tBLZ, tBHZ) validated at 12 ns speed grade and industrial temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 64K × 16-bit (1,048,576 bits), word-oriented addressing |
| Access Time (tAA) | 12 ns max - guarantees data valid within 12 ns of address stabilization |
| Supply Voltage | 3.15 V to 3.6 V - compatible with standard 3.3V logic rails, no level-shifting required |
| Operating Temperature | –40°C to +85°C - qualified for industrial environments including motor drives and base station control |
| I/O Interface | LVTTL-compatible bidirectional data bus (I/O0–I/O15) - direct connection to 3.3V microcontrollers and FPGAs |
| Byte Enable Control | Separate BHE and BLE pins - enables independent 8-bit writes without masking or read-modify-write cycles |
| Dynamic Standby Current | 45 mA max (ISB) - reduces power during idle bus cycles in battery-backed or energy-sensitive systems |
Pinout & Package
71V016SA12PHGI8 is housed in a JEDEC-standard 44-pin Plastic TSOP Type II (PHG44) package, 400-mil width, with gull-wing leads and 0.8 mm pitch. Pin 1 is marked by a beveled corner or notch on the top surface.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A15 | Address Inputs | 16-bit address bus; selects one of 64K word locations |
| I/O0–I/O7 | Low-Byte Data I/O | Bidirectional 8-bit data path enabled when BLE = L and CS = L |
| I/O8–I/O15 | High-Byte Data I/O | Bidirectional 8-bit data path enabled when BHE = L and CS = L |
| CS | Chip Select | Active-low global enable; places device in standby (high-Z) when high |
| OE | Output Enable | Active-low output gate; allows read data to drive bus without affecting write operations |
| WE | Write Enable | Active-low write strobe; initiates write cycle when CS and BHE/ble are asserted |
| BHE | High-Byte Enable | Active-low control for upper 8 bits (I/O8–I/O15); used with WE for partial writes |
| BLE | Low-Byte Enable | Active-low control for lower 8 bits (I/O0–I/O7); used with WE for partial writes |
| VDD | Power Supply | +3.3V supply input; decoupling capacitor required per JEDEC TSOP layout guidelines |
| VSS | Ground | Signal and power ground reference; requires low-inductance connection to PCB plane |
Key Features
| Feature | Design Value |
|---|---|
| Asynchronous Static Operation | No clock, no refresh, no wait states - simplifies timing budget in microcontroller-based systems |
| Dual Byte Write Enable | Independent BHE/ble control eliminates need for external byte-lane gating or software masking |
| Industrial Temperature Support | Full 12 ns performance guaranteed from –40°C to +85°C - suitable for under-hood or factory-floor deployment |
| LVTTL I/O Compatibility | Direct interface to 3.3V FPGAs, ASICs, and microprocessors without level translation |
| Low-Z Output Enable Timing | tOLZ = 0 ns - outputs enter active state immediately upon OE assertion, minimizing bus turnaround latency |
Applications
| Industrial PLC Memory Buffer | Medical Imaging Frame Store |
|---|---|
Use Scenario: Real-time I/O scanning and program execution in programmable logic controllers where deterministic memory response is critical for cycle-time compliance. IC Role / Device Role / Timing Role: Primary working memory for ladder logic execution engine, accessed via parallel bus with strict 12 ns tAA requirement. Use Value: Eliminates refresh overhead and ensures consistent 12 ns access across full industrial temperature range, enabling sub-1 ms scan cycles. | Use Scenario: Temporary storage of digitized X-ray or ultrasound frames before compression and transmission in portable diagnostic equipment. IC Role / Device Role / Timing Role: High-bandwidth frame buffer interfacing directly to ADC/DAC and FPGA image processor over 16-bit LVTTL bus. Use Value: Bidirectional 16-bit I/O and byte-selectable writes reduce FPGA resource usage and simplify pixel packing logic. |
| Avionics Data Logger | Telecom Line Card Buffer |
Use Scenario: Capturing flight sensor telemetry (accelerometer, gyroscope, pressure) at 10 kHz sampling rate in certified airborne systems. IC Role / Device Role / Timing Role: Non-volatile-cached SRAM buffer between sensor interface ASIC and flash controller, operating continuously at –40°C to +70°C. Use Value: Industrial-grade qualification and 45 mA ISB support extended battery runtime during power-loss events. | Use Scenario: Packet buffering in Ethernet line cards handling 1 Gbps traffic, requiring low-latency, byte-granular memory access for header manipulation. IC Role / Device Role / Timing Role: Shared memory resource for multiple MAC processors, supporting concurrent read/write with byte-enable isolation. Use Value: Independent BHE/ble control enables simultaneous header (high-byte) and payload (low-byte) updates without bus contention. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed parallel SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62167EV30LL-45ZSXI | 45 ns access time, 3.3V, 64K × 16, 44-pin TSOP; higher tAA limits system clock rate | Targeted at cost-sensitive industrial controls where 12 ns timing is not required | Select if design tolerates slower access and prioritizes long-term availability over speed |
| AS6C1008-12TIN | 12 ns access, 3.3V, 64K × 16, 44-pin TSOP; no byte enable pins - requires external logic for partial writes | Suitable for simple memory expansion where full-word writes suffice and board space permits discrete gating | Choose when byte-select functionality is unnecessary and footprint matching is critical |
Compared with CY62167EV30LL-45ZSXI and AS6C1008-12TIN, the 71V016SA12PHGI8 uniquely delivers 12 ns access with integrated BHE/ble control in an industrial-qualified TSOP package-enabling deterministic timing and reduced component count in real-time embedded memory subsystems.
Availability
71V016SA12PHGI8 is available at Aetrix Electronics and suitable for industrial automation, medical imaging, avionics data logging, and telecom line card designs requiring stable component supply, long lifecycle support, and verified industrial temperature performance.
Supply support for 71V016SA12PHGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering trusted embedded solutions for automotive, industrial, infrastructure, and IoT applications.
The 71V016SA series belongs to Renesas' legacy high-speed parallel SRAM product line, designed specifically for deterministic, low-latency memory interfacing in real-time control and signal processing systems.
FAQ
What is the maximum guaranteed access time for 71V016SA12PHGI8?
The 71V016SA12PHGI8 has a maximum guaranteed address access time (tAA) of 12 ns across its full industrial operating temperature range (–40°C to +85°C), as specified in the Renesas datasheet Table 10 under the 71V016SA12 column. This parameter is production-tested and applies to all valid VDD (3.15–3.6 V) and loading conditions defined in the AC test setup.
Does 71V016SA12PHGI8 support byte-selectable writes?
Yes, 71V016SA12PHGI8 supports byte-selectable writes via dedicated BHE (high-byte enable) and BLE (low-byte enable) pins. When CS and WE are active, asserting only BHE enables writing to I/O8–I/O15, while asserting only BLE enables writing to I/O0–I/O7-eliminating the need for external byte-lane logic or read-modify-write sequences in the 71V016SA12PHGI8 implementation.
What package type is used for 71V016SA12PHGI8?
The 71V016SA12PHGI8 uses a 44-pin Plastic TSOP Type II (PHG44) package, also referenced as PHGI8 in the ordering code. It features a 400-mil body width, gull-wing leads, and 0.8 mm lead pitch, conforming to JEDEC MO-141BA standards and compatible with standard TSOP reflow profiles.
Is 71V016SA12PHGI8 rated for industrial temperature operation?
Yes, the "I" suffix in 71V016SA12PHGI8 explicitly denotes industrial temperature grade (–40°C to +85°C), and all AC and DC specifications-including tAA = 12 ns, ISB = 45 mA max, and VDD = 3.15–3.6 V-are guaranteed across this full range per Renesas datasheet Section 3 and Ordering Information table.
What is the supply voltage requirement for stable operation of 71V016SA12PHGI8?
The 71V016SA12PHGI8 requires a nominal 3.3V supply with a validated operating range of 3.15 V to 3.6 V (VDD min/max per Table 5). Operation outside this window risks timing violations or data corruption; decoupling with ≥10 µF bulk and 0.1 µF ceramic capacitors near VDD/VSS pins is mandatory for stable 12 ns performance.
71V016SA12PHGI8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 1Mbit
- Memory Organization:
- 64K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 12ns
- Access Time:
- 12 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
71V016SA12PHGI8 FAQ
1.How can I place an order for 71V016SA12PHGI8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V016SA12PHGI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V016SA12PHGI8 reliable?
The price and inventory of 71V016SA12PHGI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V016SA12PHGI8 is usually 5 days.
3.What payment methods are accepted for 71V016SA12PHGI8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V016SA12PHGI8 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V016SA12PHGI8?
71V016SA12PHGI8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V016SA12PHGI8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V016SA12PHGI8?
For technical support, including 71V016SA12PHGI8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V016SA12PHGI8 requirements.
6.How does Aetrix verify that 71V016SA12PHGI8 is sourced from the original manufacturer or authorized distributors?
All 71V016SA12PHGI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V016SA12PHGI8 meets industry standards.
7.What is the process for return or replacement of 71V016SA12PHGI8?
All 71V016SA12PHGI8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V016SA12PHGI8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V016SA12PHGI8 part is unused and in its original packaging.
Return procedure for 71V016SA12PHGI8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V016SA12PHGI8 Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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