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Renesas 71V016SA12YG8
- Part No.:
- 71V016SA12YG8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 44-BSOJ (0.400", 10.16mm Width)
- Datasheet:
-
71V016SA12YG8.pdf
- Description:
- IC SRAM 1MBIT PARALLEL 44SOJ
- Quantity:
- Payment:
- Shipping:
Inventory:3,839
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Product details
Overview
71V016SA12YG8 from Renesas Electronics is a 64K × 16-bit (1 Mbit) high-speed CMOS static RAM with 12 ns access time, single 3.3 V supply operation, LVTTL-compatible I/Os, and industrial-grade temperature range (–40°C to +85°C). It features separate byte enable (BHE/BLE), output enable (OE), and chip select (CS) for flexible memory interfacing in embedded controllers and data acquisition systems.
For engineers reviewing the 71V016SA12YG8 datasheet, 71V016SA12YG8 pinout, 71V016SA12YG8 application, or 71V016SA12YG8 equivalent, key selection criteria include 12 ns read cycle timing, SOJ-44 package compatibility, byte-selectable 16-bit data bus operation, and low-power standby current (40 mA max at industrial temp).
Technical Context
The 71V016SA12YG8 implements fully static asynchronous logic with no clocks or refresh required. Its architecture supports independent high-byte (I/O8–I/O15) and low-byte (I/O0–I/O7) write/read operations via dedicated BHE and BLE inputs, enabling efficient 8-bit subsystem integration without external byte masking logic.
Timing is controlled by three independent enable paths: CS-driven (tACS = 12 ns max), OE-driven (tOE = 6 ns max), and byte-enable-driven (tBE = 6 ns max), all operating under LVTTL voltage thresholds (VIH ≥ 2.0 V, VIL ≤ 0.8 V) with 3.3 V ±0.3 V supply tolerance.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 64K × 16-bit (1,048,576 bits), word-addressable with A0–A15 |
| Access Time (tAA) | 12 ns max - determines minimum address setup before valid data appears on I/O bus |
| Read Cycle Time (tRC) | 12 ns max - sets shortest interval between successive read operations |
| Supply Voltage | 3.15 V to 3.6 V - compatible with standard 3.3 V LVTTL logic rails |
| Operating Temperature | –40°C to +85°C - qualified for industrial environments without derating |
| Standby Current (ISB) | 40 mA max - enables low-power hold mode when CS ≥ VHC |
| I/O Interface | LVTTL-compatible bidirectional bus - directly interfaces with FPGA, MCU, or ASIC I/O banks |
Pinout & Package
71V016SA12YG8 is housed in a 44-pin Plastic SOJ (PBG44) package with 0.025-inch lead pitch, JEDEC-standard footprint, and surface-mount configuration suitable for automated assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A15 | Address Inputs | 16-bit address bus for selecting one of 64K memory locations |
| I/O0–I/O7 | Low-Byte Data I/O | Bidirectional 8-bit data path enabled only when BLE = L and CS = L |
| I/O8–I/O15 | High-Byte Data I/O | Bidirectional 8-bit data path enabled only when BHE = L and CS = L |
| CS | Chip Select | Active-low global enable; places device in standby (high-Z) when deasserted |
| OE | Output Enable | Active-low control for output drivers; allows read data gating without disabling chip |
| WE | Write Enable | Active-low signal initiating write cycle; latches data on rising edge of WE |
| BLE | Low-Byte Enable | Active-low control enabling I/O0–I/O7 during read/write; isolates low byte when high |
| BHE | High-Byte Enable | Active-low control enabling I/O8–I/O15 during read/write; isolates high byte when high |
| VDD | Power Supply | +3.3 V supply input; requires local 0.1 µF ceramic decoupling |
| VSS | Ground | Reference ground for all I/O and internal circuitry |
Key Features
| Feature | Design Value |
|---|---|
| Byte-selectable 16-bit interface | Enables independent 8-bit reads/writes to upper/lower memory bytes without external logic |
| 12 ns access with full industrial qualification | Guaranteed timing performance across –40°C to +85°C, eliminating thermal derating in harsh environments |
| Single 3.3 V supply operation | Eliminates need for dual-voltage regulation; simplifies power design and reduces BOM count |
| Low standby current (40 mA max) | Reduces system-level power consumption during idle periods in battery-backed or energy-sensitive applications |
| LVTTL-compatible I/Os | Direct interface with industry-standard microcontrollers, FPGAs, and peripheral ICs without level-shifting |
Applications
| Industrial PLC Data Buffer | Medical Imaging Frame Store |
|---|---|
Use Scenario: Real-time buffering of sensor data streams in programmable logic controller backplanes where deterministic latency is critical. IC Role / Device Role / Timing Role: Asynchronous SRAM providing zero-wait-state memory access for CPU or DMA engines handling cyclic I/O scans. Use Value: 12 ns tAA ensures sub-microsecond response to interrupt-driven data capture, supporting >80 kSPS sampling rates without FIFO overflow. | Use Scenario: Temporary storage of digitized X-ray or ultrasound frames prior to compression and transmission in portable diagnostic equipment. IC Role / Device Role / Timing Role: High-reliability frame buffer interfacing with image sensor controllers and JPEG encoders via parallel 16-bit bus. Use Value: Industrial temperature rating and byte-enable capability allow selective pixel block writes, reducing bus contention during partial-frame updates. |
| Avionics Display Controller Cache | Test & Measurement Pattern Generator |
Use Scenario: Storing display list instructions and glyph bitmaps in ruggedized cockpit display units subject to wide thermal cycling. IC Role / Device Role / Timing Role: Non-refreshing memory holding GUI assets accessed by real-time graphics engine with strict jitter constraints. Use Value: Fully static operation eliminates refresh-induced timing jitter; SOJ-44 package offers proven reliability in vibration-prone aerospace PCBs. | Use Scenario: Holding programmable waveform templates in automated test equipment generating multi-channel digital stimulus signals. IC Role / Device Role / Timing Role: High-speed pattern memory feeding parallel output drivers synchronized to system clock domain. Use Value: 12 ns tRC enables 83 MHz burst read rates, supporting 100+ Mbit/s pattern streaming without pipeline stalls. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed parallel SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62167EV30LL-45ZSXI | 45 ns access time, 512K × 16 organization, 3.3 V core but 1.8 V I/O option | Slower timing limits use in sub-20 ns timing-critical control loops | Select when lower cost and larger density outweigh speed requirements |
| AS6C1008-12TIN | 12 ns access, 64K × 16, but commercial-only (0°C to +70°C) temperature grade | Not qualified for industrial ambient or extended thermal cycling | Select only for benign-environment consumer or lab-grade equipment |
Compared with CY62167EV30LL-45ZSXI and AS6C1008-12TIN, the 71V016SA12YG8 uniquely delivers 12 ns industrial-grade performance in SOJ-44 packaging-enabling drop-in replacement in legacy designs requiring guaranteed –40°C to +85°C operation and minimal board rework.
Availability
71V016SA12YG8 is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical imaging frame stores, avionics display controllers, and test & measurement pattern generators requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for 71V016SA12YG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering trusted embedded solutions for automotive, industrial, infrastructure, and IoT applications.
The 71V016SA12YG8 belongs to Renesas' legacy high-speed parallel SRAM product line, designed specifically for deterministic, low-latency memory interfacing in real-time control and data acquisition systems.
FAQ
What is the maximum operating frequency supported by the 71V016SA12YG8?
The 71V016SA12YG8 does not operate on a clock; it is an asynchronous SRAM. Its maximum effective throughput is determined by its 12 ns read cycle time (tRC), enabling up to 83.3 MHz sustained random-access read operations. Write cycles also require minimum 12 ns tWC, maintaining symmetrical timing for mixed R/W workloads.
Does the 71V016SA12YG8 require external refresh circuitry?
No, the 71V016SA12YG8 is a fully static RAM and requires no refresh cycles or external timing control. Its CMOS latch-based memory cells retain data indefinitely as long as VDD remains within specification (3.15 V to 3.6 V) and ambient temperature stays within –40°C to +85°C.
Can the 71V016SA12YG8 be used with 5 V logic systems?
No-the 71V016SA12YG8 is strictly a 3.3 V LVTTL device. Its absolute maximum input voltage is VDD + 0.5 V (≤ 4.1 V), and VIH threshold is defined at ≥ 2.0 V. Direct connection to 5 V logic may damage the part or cause unreliable operation; level translation is mandatory for mixed-voltage systems.
What is the purpose of the BHE and BLE pins on the 71V016SA12YG8?
BHE (High-Byte Enable) and BLE (Low-Byte Enable) are active-low controls that independently gate the upper (I/O8–I/O15) and lower (I/O0–I/O7) data bytes. When asserted with CS = L and WE = L, they allow 8-bit writes to either half of the 16-bit bus-reducing bus contention and enabling efficient byte-aligned memory mapping in 8-bit subsystems.
Is the 71V016SA12YG8 RoHS compliant and halogen-free?
Yes-the 71V016SA12YG8 is a green-part designation (indicated by the "G" in the orderable code) and complies with RoHS Directive 2011/65/EU and JEDEC JS709A standards for halogen-free materials. Full compliance documentation is available upon request from Aetrix Electronics.
71V016SA12YG8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 44-BSOJ (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 1Mbit
- Memory Organization:
- 64K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 12ns
- Access Time:
- 12 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-SOJ
71V016SA12YG8 FAQ
1.How can I place an order for 71V016SA12YG8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V016SA12YG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V016SA12YG8 reliable?
The price and inventory of 71V016SA12YG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V016SA12YG8 is usually 5 days.
3.What payment methods are accepted for 71V016SA12YG8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V016SA12YG8 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V016SA12YG8?
71V016SA12YG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V016SA12YG8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V016SA12YG8?
For technical support, including 71V016SA12YG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V016SA12YG8 requirements.
6.How does Aetrix verify that 71V016SA12YG8 is sourced from the original manufacturer or authorized distributors?
All 71V016SA12YG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V016SA12YG8 meets industry standards.
7.What is the process for return or replacement of 71V016SA12YG8?
All 71V016SA12YG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V016SA12YG8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V016SA12YG8 part is unused and in its original packaging.
Return procedure for 71V016SA12YG8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V016SA12YG8 Tags
-
M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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