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Renesas 71V016SA15YG8
- Part No.:
- 71V016SA15YG8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 44-BSOJ (0.400", 10.16mm Width)
- Datasheet:
-
71V016SA15YG8.pdf
- Description:
- IC SRAM 1MBIT PARALLEL 44SOJ
- Quantity:
- Payment:
- Shipping:
Inventory:4,319
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Product details
Overview
71V016SA15YG8 from Renesas Electronics is a 64K × 16-bit, 1 Mbit high-speed CMOS static RAM operating at 3.3 V with 15 ns read/write cycle time, industrial-grade temperature range (–40°C to +85°C), and LVTTL-compatible bidirectional I/Os. It features separate upper/lower byte enables, single chip select plus output enable, and low-power standby modes - deployed in embedded controllers, network packet buffers, and real-time data acquisition systems.
For engineers reviewing the 71V016SA15YG8 datasheet, 71V016SA15YG8 pinout, 71V016SA15YG8 application, or 71V016SA15YG8 equivalent, key selection criteria include access timing consistency (tAA = tRC = 15 ns), byte-selectable write capability, SOJ-44 package compatibility, and industrial-temperature reliability without refresh circuitry.
Technical Context
The 71V016SA15YG8 implements fully static asynchronous architecture with no clocks or refresh required. Its memory array is organized as 64K words × 16 bits, using high-reliability CMOS process technology to achieve stable operation across –40°C to +85°C.
All control inputs (CS, OE, WE, BHE, BLE) are LVTTL-compatible with VIH ≥ 2.0 V and VIL ≤ 0.8 V; bidirectional I/Os support 8 mA sink and –4 mA source drive strength under min VDD (3.15 V), enabling direct interface with legacy 3.3 V logic families.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 64K × 16-bit (1,048,576 bits), word-addressable SRAM |
| Access/Cycle Time | 15 ns - guarantees deterministic read/write latency for real-time control loops |
| Supply Voltage | 3.15 V to 3.6 V - compatible with standard 3.3 V power rails and tolerant of ±4.5% variation |
| Operating Temperature | –40°C to +85°C - qualified for industrial environments without derating |
| I/O Interface | LVTTL-compatible - interoperable with 3.3 V microcontrollers and FPGAs without level shifters |
| Power Consumption | ISB1 = 10 µA max in full standby - enables ultra-low-power sleep states |
| Byte Enable Support | Separate BHE/BLE pins - allows independent 8-bit writes to high/low bytes without masking logic |
Pinout & Package
71V016SA15YG8 is packaged in a JEDEC-standard 44-pin Plastic SOJ (PBG44), 400-mil body, with gull-wing leads and lead-free (Green) finish per ordering code "G".
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A15 | Address Inputs | 16-bit address bus for 64K-word addressing; TTL-compatible input thresholds |
| CS | Chip Select | Active-low enable; controls device selection and power-down entry when high |
| OE | Output Enable | Active-low; enables I/O drivers during reads; tOE = 7 ns max ensures fast data release |
| WE | Write Enable | Active-low; initiates write cycles; tWP = 10 ns min defines minimum pulse width |
| BHE | High-Byte Enable | Active-low; gates I/O8–I/O15 during byte writes; supports partial-word updates |
| BLE | Low-Byte Enable | Active-low; gates I/O0–I/O7 during byte writes; enables efficient 8-bit transfers |
| I/O0–I/O15 | Bidirectional Data | 16-bit LVTTL I/O bus; tristated when CS, OE, BHE, or BLE inactive |
| VDD | Power Supply | +3.3 V supply pin; two dedicated pins (pins 26 & 33) reduce IR drop and noise coupling |
| VSS | Ground | Ground reference; two dedicated pins (pins 25 & 34) improve return path integrity |
Key Features
| Feature | Design Value |
|---|---|
| Equal access and cycle times | tAA = tRC = 15 ns - eliminates timing margin uncertainty between read and write operations |
| Byte-selectable write capability | Dedicated BHE/BLE pins - enables atomic 8-bit writes without external gating or read-modify-write cycles |
| Low-power standby modes | ISB1 = 10 µA max (static) and ISB = 35 mA max (dynamic) - reduces system idle power by >95% vs active mode |
| Industrial temperature qualification | –40°C to +85°C operation - validated across full voltage and timing specs without derating |
| LVTTL-compatible I/O | VIH(min) = 2.0 V, VIL(max) = 0.8 V - ensures robust noise immunity and compatibility with 3.3 V logic families |
Applications
| Industrial PLC Data Buffer | Network Switch Packet Memory |
|---|---|
Use Scenario: Storing transient packet headers and metadata in Layer 2/Layer 3 switching ASICs where deterministic latency is critical. IC Role / Device Role / Timing Role: Asynchronous SRAM buffer interfacing directly with MAC controller and switch fabric logic. Use Value: 15 ns tRC enables sub-67 MHz packet processing throughput; byte enables allow header-only writes without disturbing payload storage. |
Use Scenario: Real-time buffering of sensor data streams in programmable logic controller I/O modules with fieldbus interfaces. IC Role / Device Role / Timing Role: Non-refreshing data scratchpad for cyclic process variables and alarm logs in deterministic control cycles. Use Value: Industrial temp rating ensures reliability in cabinet-mounted controllers; low ISB1 extends battery-backed runtime during AC loss. |
| FPGA Configuration Cache | DSP Co-Processor Memory |
Use Scenario: Holding configuration bitstreams or lookup tables for Xilinx/Intel FPGA I/O banks requiring fast parallel access. IC Role / Device Role / Timing Role: Parallel boot memory mapped to FPGA's slave select interface with synchronous read initiation. Use Value: SOJ-44 footprint matches legacy FPGA carrier board layouts; LVTTL compatibility avoids level-shifter components. |
Use Scenario: Offloading FFT coefficient storage and intermediate result buffering from TI C6000 or Analog Devices SHARC DSPs. IC Role / Device Role / Timing Role: External data RAM accessed via EMIF with byte-enable granularity for complex number packing. Use Value: tBE = 7 ns enables tight synchronization with DSP memory controller strobes; dual VDD/VSS pins suppress switching noise on analog-sensitive boards. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed asynchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62167EV30LL-15ZSXI | 512K × 16-bit (8 Mbit), 15 ns, 3.3 V, TSOP-44; higher density but larger package footprint | Used where extended buffer depth is needed beyond 1 Mbit; not pin-compatible with SOJ-44 layout | Select when memory expansion >1 Mbit is required and board redesign accommodates TSOP-44 |
| AS6C1008-15TIN | 128K × 8-bit (1 Mbit), 15 ns, 3.3 V, SOJ-32; narrower 8-bit bus, smaller pin count | Suitable for 8-bit microcontroller systems; requires external byte multiplexing for 16-bit alignment | Choose only for cost-sensitive 8-bit designs where bus width reduction is acceptable |
Compared with CY62167EV30LL-15ZSXI and AS6C1008-15TIN, the 71V016SA15YG8 uniquely delivers 64K × 16-bit organization in SOJ-44 with industrial temperature support and true byte-enable independence - making it optimal for space-constrained, deterministic 16-bit embedded systems requiring zero-refresh operation.
Availability
71V016SA15YG8 is available at Aetrix Electronics and suitable for industrial automation, networking infrastructure, and embedded DSP applications requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant green packaging.
Supply support for 71V016SA15YG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering trusted embedded solutions, automotive MCUs, analog/power devices, and memory products for industrial and communications markets.
The 71V016SA15YG8 belongs to Renesas' legacy high-speed CMOS SRAM product line, designed specifically for deterministic, low-latency, non-volatile-critical memory applications in industrial control and telecom infrastructure.
FAQ
What is the maximum operating frequency supported by the 71V016SA15YG8?
The 71V016SA15YG8 does not operate on a clock signal - it is an asynchronous static RAM. Its performance is defined by timing parameters: maximum read/write cycle time is 15 ns, corresponding to a theoretical maximum sustained throughput of 66.7 MHz for consecutive accesses. Actual system frequency depends on controller interface design and bus turnaround overhead.
Does the 71V016SA15YG8 require refresh circuitry or periodic maintenance?
No, the 71V016SA15YG8 is a fully static RAM and requires no refresh cycles, clocks, or periodic maintenance. Its CMOS latch-based memory cells retain data indefinitely as long as VDD is applied and within specification - a key advantage over DRAM in deterministic real-time systems.
Can the 71V016SA15YG8 be used with 5 V logic interfaces?
No - the 71V016SA15YG8 is strictly a 3.3 V LVTTL device. Its absolute maximum input voltage is VDD + 0.5 V (≤ 4.1 V), and VIH threshold is specified at ≥ 2.0 V. Direct connection to 5 V logic may damage the part or cause unreliable operation; level translation is mandatory for mixed-voltage systems.
What is the meaning of the "YG8" suffix in 71V016SA15YG8?
In the 71V016SA15YG8 ordering code, "Y" denotes 44-pin Plastic SOJ (PBG44) package, "G" indicates lead-free (Green) finish, and "8" specifies tape-and-reel packaging. This distinguishes it from tube-packaged variants (e.g., 71V016SA15YG) and FBGA/TSOP alternatives.
How does the 71V016SA15YG8 handle simultaneous byte writes to high and low bytes?
When both BHE and BLE are asserted low simultaneously, the 71V016SA15YG8 performs a full 16-bit word write - identical to asserting WE alone with CS low. The device does not require additional timing constraints for combined byte enables; tBW = 10 ns applies independently to each enable, and overlapping assertion is fully supported per truth table behavior.
71V016SA15YG8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 44-BSOJ (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 1Mbit
- Memory Organization:
- 64K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 15 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-SOJ
71V016SA15YG8 FAQ
1.How can I place an order for 71V016SA15YG8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V016SA15YG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V016SA15YG8 reliable?
The price and inventory of 71V016SA15YG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V016SA15YG8 is usually 5 days.
3.What payment methods are accepted for 71V016SA15YG8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V016SA15YG8 transactions.
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4.How is shipping managed for 71V016SA15YG8?
71V016SA15YG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V016SA15YG8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V016SA15YG8?
For technical support, including 71V016SA15YG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V016SA15YG8 requirements.
6.How does Aetrix verify that 71V016SA15YG8 is sourced from the original manufacturer or authorized distributors?
All 71V016SA15YG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V016SA15YG8 meets industry standards.
7.What is the process for return or replacement of 71V016SA15YG8?
All 71V016SA15YG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V016SA15YG8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V016SA15YG8 part is unused and in its original packaging.
Return procedure for 71V016SA15YG8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V016SA15YG8 Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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