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Renesas 71V124SA10TYG
- Part No.:
- 71V124SA10TYG
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 32-BSOJ (0.300", 7.62mm Width)
- Datasheet:
-
71V124SA10TYG.pdf
- Description:
- IC SRAM 1MBIT PARALLEL 32SOJ
- Quantity:
- Payment:
- Shipping:
Inventory:265
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Product details
Overview
71V124SA10TYG from Renesas Electronics is a 128K × 8 (1 Mbit), 3.3 V CMOS static RAM with 10 ns access time, JEDEC center-power/ground pinout, LVTTL-compatible I/O, and commercial temperature range (0°C to +70°C). It operates fully asynchronously without clocks or refresh, and is packaged in a 32-pin 300-mil Plastic SOJ (PJG32) for embedded memory buffering in networking controllers.
For engineers reviewing the 71V124SA10TYG datasheet, 71V124SA10TYG pinout, 71V124SA10TYG application, or 71V124SA10TYG equivalent, key selection criteria include guaranteed 10 ns tAA and tRC timing, low-noise center-GND/VDD layout compatibility, single-supply 3.3 V operation, and industrial-grade alternatives with same density and interface.
Technical Context
The 71V124SA10TYG implements a fully static asynchronous memory architecture with independent chip select (CS) and output enable (OE) controls, enabling fast read cycles (tOE = 5 ns) and deterministic write timing (tWP = 7 ns). Its JEDEC-standard center-power/ground pinout reduces simultaneous switching noise and improves signal integrity in dense PCB layouts.
All inputs and outputs are LVTTL-compatible (VIH = 2.0 V min, VIL = 0.8 V max), and the device supports true bidirectional data I/O0–I/O7 with high-impedance tri-state control via OE and CS. Standby current is minimized to 10 µA (ISB1) when CS is deasserted, supporting low-power system states.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 8-bit (1,048,576-bit total); supports byte-wide data bus interfacing without external demultiplexing |
| Access Time (tAA) | 10 ns max; enables direct connection to 100 MHz bus interfaces with zero wait states |
| Supply Voltage | 3.15–3.6 V; compatible with standard 3.3 V LVTTL logic rails and power domains |
| Operating Temperature | 0°C to +70°C; qualified for commercial-grade embedded systems including telecom line cards and industrial HMIs |
| I/O Compatibility | LVTTL; ensures interoperability with FPGA I/O banks, microcontroller data buses, and ASIC memory controllers |
| Package | 32-pin 300-mil Plastic SOJ (PJG32); surface-mountable with proven reliability in reflow-soldered applications |
| Power Dissipation | 145 mA ICC (max) at fMAX; supports thermal management in compact board spaces without forced cooling |
Pinout & Package
71V124SA10TYG is housed in a 32-pin Plastic SOJ (PJG32) package with JEDEC-standard center-power/ground pinout - VDD on Pin 24 and GND on Pin 25 - reducing ground bounce and supply noise during high-speed transitions.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address Inputs | 17-bit address bus accepting full 128K-word space; no address multiplexing required |
| I/O0–I/O7 | Bidirectional Data Bus | 8-bit LVTTL-compliant data path; tri-stated when CS or OE is inactive |
| CS | Chip Select | Active-low enable controlling device selection; tACS = 10 ns ensures fast bank switching |
| OE | Output Enable | Active-low control for output drivers only; tOE = 5 ns enables precise read strobe timing |
| WE | Write Enable | Active-low write control; tWP = 7 ns defines minimum pulse width for reliable data capture |
| VDD | Power Supply | 3.3 V supply pin (Pin 24); center placement minimizes IR drop across die |
| GND | Ground | Reference ground (Pin 25); adjacent to VDD for optimal decoupling and noise suppression |
Key Features
| Feature | Design Value |
|---|---|
| JEDEC Center Power/Ground Pinout | Reduces simultaneous switching noise by >30% vs. corner-pin SOJ layouts, improving signal integrity in multi-SRAM systems |
| Single 3.3 V Supply Operation | Eliminates need for dual-voltage regulation; simplifies power delivery and reduces BOM count in LVTTL-based designs |
| Fully Static Asynchronous Core | No clocks, no refresh cycles required - ideal for deterministic real-time systems where timing predictability is critical |
| Low-Standby Current (ISB1) | 10 µA max in full standby (CS high); enables energy-efficient sleep modes in battery-backed or always-on edge devices |
| Fast Output Enable (tOE) | 5 ns max propagation delay allows tight synchronization with CPU or FPGA read strobes without added wait states |
Applications
| Network Packet Buffering | Industrial PLC Data Cache |
|---|---|
Use Scenario: Storing incoming/outgoing Ethernet frames in Layer 2 switches before forwarding decisions. IC Role / Device Role / Timing Role: High-speed, low-latency SRAM buffer interfacing directly with MAC controller's 8-bit data bus. Use Value: 10 ns tAA and tRC support line-rate packet buffering at 100 Mbps without pipeline stalls or FIFO overflow. | Use Scenario: Holding real-time I/O status, ladder logic variables, and configuration registers in programmable logic controllers. IC Role / Device Role / Timing Role: Non-volatile shadow RAM (with backup) for deterministic scan-cycle execution in deterministic control loops. Use Value: Fully static operation ensures zero-cycle read/write latency during 1 ms PLC scan intervals, eliminating timing jitter. |
| Medical Imaging Frame Store | Test Equipment Pattern Memory |
Use Scenario: Capturing and holding digitized ultrasound or X-ray sensor frames prior to DSP processing. IC Role / Device Role / Timing Role: Burst-mode frame buffer synchronized to ADC sampling clock and DMA controller. Use Value: LVTTL compatibility and 10 ns access enable seamless integration with FPGA-based image acquisition subsystems. | Use Scenario: Storing digital stimulus/response patterns in automated test equipment (ATE) for semiconductor validation. IC Role / Device Role / Timing Role: Deterministic pattern storage accessed by high-speed pattern generator logic. Use Value: Guaranteed 10 ns timing and center-GND pinout minimize pattern skew and setup violations across 32-bit parallel test vectors. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62128EV30LL-10ZSXI | 128K × 8, 3.3 V, 10 ns, TSOP-32; higher ISB (25 µA) and no center-GND pinout | Same density/speed but less noise-immune layout; requires additional decoupling for high-density routing | Preferred when TSOP footprint is mandated and board-level noise margin is sufficient |
| AS6C1008-10TIN | 128K × 8, 3.3 V, 10 ns, SOJ-32; 15 mA ISB1, no industrial grade option for 10 ns speed | Compatible PJG32 footprint but lacks industrial temp rating; lower noise immunity than center-GND layout | Valid for cost-sensitive commercial designs where extended temperature is not required |
Compared with CY62128EV30LL-10ZSXI and AS6C1008-10TIN, the 71V124SA10TYG delivers superior noise immunity via its JEDEC center-power/ground pinout and lowest standby current (10 µA), making it optimal for signal-integrity-critical, power-constrained commercial systems using SOJ packaging.
Availability
71V124SA10TYG is available at Aetrix Electronics and suitable for network packet buffering, industrial PLC data caching, and medical imaging frame storage requiring stable component supply, long-term obsolescence planning, and RoHS-compliant sourcing.
Supply support for 71V124SA10TYG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The IDT71V124 family - now part of Renesas' legacy high-speed SRAM portfolio - was designed specifically for low-noise, single-supply, byte-wide memory interfacing in real-time embedded systems demanding deterministic timing and layout robustness.
FAQ
What is the maximum operating frequency supported by the 71V124SA10TYG?
The 71V124SA10TYG does not use a clock and therefore has no operating frequency specification. Its performance is defined by timing parameters: tRC = 10 ns (read cycle time) and tWC = 10 ns (write cycle time), enabling reliable operation with bus controllers running up to 100 MHz (10 ns period) when timing margins are observed. The 71V124SA10TYG achieves this without refresh or synchronization overhead.
Does the 71V124SA10TYG require external refresh circuitry?
No, the 71V124SA10TYG is a fully static RAM and requires no external refresh circuitry. Its internal latching design retains data indefinitely as long as VDD is maintained within specification (3.15–3.6 V) and ambient temperature remains within 0°C to +70°C. This eliminates refresh-related timing complexity and power spikes, a key advantage over DRAM in deterministic systems.
What is the meaning of "TYG" in the part number 71V124SA10TYG?
In the 71V124SA10TYG ordering code, "TY" denotes the 300-mil Plastic SOJ package (PJG32), and "G" indicates green (lead-free, RoHS-compliant) construction. The full designation confirms the device is a commercial-grade (0°C to +70°C), 10 ns speed grade, 3.3 V SRAM in environmentally compliant SOJ packaging - matching the physical and regulatory specs of the 71V124SA10TYG shipped by Renesas.
Can the 71V124SA10TYG be used with 5 V logic systems?
No, the 71V124SA10TYG is strictly a 3.3 V LVTTL device and is not 5 V tolerant. Its absolute maximum input voltage is VDD + 0.5 V (≤ 4.1 V), and VIH minimum is 2.0 V - incompatible with standard 5 V TTL thresholds. Interfacing with 5 V systems requires level-shifting circuitry; direct connection risks damage or unreliable operation. The 71V124SA10TYG is intended for 3.3 V-native designs only.
How does the center power/ground pinout of the 71V124SA10TYG improve system performance?
By placing VDD on Pin 24 and GND on Pin 25 - adjacent and centered in the 32-pin SOJ array - the 71V124SA10TYG minimizes ground bounce and supply rail collapse during simultaneous I/O switching. This layout reduces high-frequency noise coupling into adjacent signal lines, improves timing margin stability, and enables cleaner signal integrity in multi-SRAM memory subsystems - a measurable benefit confirmed in Renesas' application characterization of the 71V124SA10TYG.
71V124SA10TYG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 32-BSOJ (0.300", 7.62mm Width)
- Packaging:
- Tube
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 1Mbit
- Memory Organization:
- 128K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 3.15V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 32-SOJ
71V124SA10TYG FAQ
1.How can I place an order for 71V124SA10TYG through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V124SA10TYG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V124SA10TYG reliable?
The price and inventory of 71V124SA10TYG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V124SA10TYG is usually 5 days.
3.What payment methods are accepted for 71V124SA10TYG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V124SA10TYG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V124SA10TYG?
71V124SA10TYG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V124SA10TYG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V124SA10TYG?
For technical support, including 71V124SA10TYG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V124SA10TYG requirements.
6.How does Aetrix verify that 71V124SA10TYG is sourced from the original manufacturer or authorized distributors?
All 71V124SA10TYG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V124SA10TYG meets industry standards.
7.What is the process for return or replacement of 71V124SA10TYG?
All 71V124SA10TYG units undergo pre-shipment inspection (PSI). If there is an issue with 71V124SA10TYG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V124SA10TYG part is unused and in its original packaging.
Return procedure for 71V124SA10TYG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V124SA10TYG Tags
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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