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Renesas 71V124SA10TYG8
- Part No.:
- 71V124SA10TYG8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 32-BSOJ (0.300", 7.62mm Width)
- Datasheet:
-
71V124SA10TYG8.pdf
- Description:
- IC SRAM 1MBIT PARALLEL 32SOJ
- Quantity:
- Payment:
- Shipping:
Inventory:4,452
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Product details
Overview
71V124SA10TYG8 from Renesas Electronics is a 128K × 8 (1 Mbit) high-speed CMOS static RAM with LVTTL-compatible I/O, single 3.3 V supply operation, 10 ns access time, and JEDEC-standard center-power/center-ground pinout in 32-pin 300-mil Plastic SOJ package. It serves as main or cache memory in embedded controllers, network interface cards, and industrial PLCs requiring deterministic asynchronous read/write timing.
For engineers reviewing the 71V124SA10TYG8 datasheet, 71V124SA10TYG8 pinout, 71V124SA10TYG8 application, or 71V124SA10TYG8 equivalent, this page delivers verified specifications, validated pin functions, real-world use cases, and technically accurate alternative options for memory subsystem design and BOM optimization.
Technical Context
The 71V124SA10TYG8 implements fully static asynchronous circuitry-no clocks or refresh cycles required-and uses dual control logic with independent Chip Select (CS) and Output Enable (OE) inputs to support flexible bus arbitration. Its center-power/center-ground pinout reduces simultaneous switching noise by minimizing power/ground loop inductance during high-frequency address/data transitions.
It supports two distinct write timing modes: WE-controlled (with OE held HIGH) and CS-controlled (with WE held HIGH), enabling compatibility with diverse memory controller architectures. All DC and AC parameters-including tAA = 10 ns, tRC = 10 ns, and tOE = 5 ns-are guaranteed across commercial temperature range (0°C to +70°C) at VDD = 3.15–3.6 V.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 8-bit (1,048,576 bits); supports byte-wide data bus without external multiplexing |
| Access Time (tAA) | 10 ns max; enables CPU or FPGA interfaces running up to 100 MHz burst-free read cycles |
| Supply Voltage | 3.15–3.6 V; compatible with standard 3.3 V logic rails and tolerant of ±5% regulation variation |
| I/O Interface | LVTTL-compatible inputs/outputs; ensures direct connection to 3.3 V microcontrollers and FPGAs without level shifters |
| Operating Temperature | 0°C to +70°C (Commercial grade); suitable for office, telecom, and non-harsh industrial environments |
| Power Dissipation | ICC = 145 mA max (dynamic active), ISB = 45 mA max (dynamic standby); enables thermal management in dense PCB layouts |
| Package | 32-pin 300-mil Plastic SOJ (PJG32); surface-mount compatible with standard reflow profiles and IPC-7351B footprint |
Pinout & Package
71V124SA10TYG8 is housed in a 32-pin Plastic SOJ (PJG32) package with JEDEC-standard center-power/center-ground layout-VDD on pins 13 & 20, GND on pins 14 & 19-to minimize ground bounce and improve signal integrity in high-speed memory buses.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address Inputs | 17-bit address bus supporting full 128K-word decoding; no internal latching or multiplexing required |
| I/O0–I/O7 | Bidirectional Data Bus | 8-bit tri-state data path; direction controlled by WE and OE; LVTTL voltage thresholds ensure clean bus sharing |
| CS | Chip Select Input | Active-low enable; must be stable before address setup to guarantee tACS ≤ 10 ns access latency |
| OE | Output Enable Input | Active-low control of output drivers; enables fast 5 ns output enable (tOE) independent of CS timing |
| WE | Write Enable Input | Active-low write strobe; defines write cycle boundaries per JEDEC timing waveforms (WE- or CS-controlled) |
| VDD (Pins 13, 20) | Power Supply | Dual center-placed 3.3 V supply pins reduce IR drop and improve decoupling effectiveness |
| GND (Pins 14, 19) | Ground Reference | Dual center-placed ground pins provide low-inductance return path for all I/O and core logic |
Key Features
| Feature | Design Value |
|---|---|
| JEDEC center-power/center-ground pinout | Reduces simultaneous switching noise by >30% vs. corner-pin SOJ, improving signal integrity in multi-MB/s memory buses |
| 10 ns read access with 5 ns OE response | Enables zero-wait-state operation with ARM9, ColdFire, and Spartan-3 FPGA memory controllers |
| Fully static asynchronous architecture | Eliminates refresh overhead and clock tree routing; simplifies PCB layout and power sequencing |
| Single 3.3 V supply with LVTTL I/O | Removes need for dual-voltage regulators or level translators in 3.3 V system designs |
| Low-power standby mode (ISB1 = 10 µA) | Supports battery-backed operation in industrial HMI and remote telemetry nodes with <1 µW sleep power |
Applications
| Industrial PLC Memory Buffer | Network Interface Card (NIC) Packet Buffer |
|---|---|
|
Use Scenario: Real-time I/O scanning and ladder logic execution in programmable logic controllers with deterministic cycle times. IC Role / Device Role / Timing Role: Primary working memory for instruction fetch and data register storage; operates in fully asynchronous mode with no clock dependency. Use Value: 10 ns tAA and tRC guarantee sub-100 ns memory turnaround, meeting hard real-time scan cycle deadlines under worst-case temperature and voltage conditions. |
Use Scenario: Temporary storage of Ethernet frames between MAC and PHY layers in 10/100 Mbps NICs. IC Role / Device Role / Timing Role: Dual-port accessible buffer supporting concurrent read (to host) and write (from PHY) via CS/OE/WE arbitration. Use Value: Independent OE control allows rapid output enable (5 ns tOE) for low-latency frame forwarding without impacting ongoing write operations. |
| Medical Imaging Control Board | Test & Measurement Equipment FIFO |
|
Use Scenario: Storing configuration registers and calibration tables in portable ultrasound or ECG front-end controllers. IC Role / Device Role / Timing Role: Non-volatile shadow memory replacement; retains critical settings during power cycling via external backup. Use Value: Low ISB1 (10 µA) enables long-term retention using coin-cell backup, extending operational uptime between service intervals. |
Use Scenario: High-speed acquisition buffering in digital oscilloscopes and logic analyzers capturing bursts at ≥50 MS/s. IC Role / Device Role / Timing Role: Asynchronous FIFO stage between ADC interface and DSP engine; accepts variable-depth writes and reads. Use Value: Center-power/ground pinout suppresses noise-induced bit errors during high-slew-rate analog sampling, maintaining data fidelity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62128EV30LL-10ZSXI | 128K × 8, 10 ns, 3.3 V, TSOP-32; lower ICC (125 mA) but no center-power pinout | Preferred for space-constrained boards where TSOP footprint is acceptable and noise margin less critical | Select when board-level EMI control is managed externally and SOJ rework capability is not required |
| AS6C1008-10TIN | 128K × 8, 10 ns, 3.3 V, SOJ-32; identical pinout but higher ISB (25 µA) and no industrial temp option | Suitable for cost-sensitive consumer electronics where commercial-grade reliability suffices | Choose when sourcing flexibility matters more than ultra-low standby current or extended temperature validation |
Compared with 71V124SA10TYG8, CY62128EV30LL-10ZSXI trades pinout-driven noise immunity for lower active current, while AS6C1008-10TIN matches mechanical compatibility but sacrifices standby efficiency and temperature range-making 71V124SA10TYG8 optimal for noise-sensitive industrial control and legacy SOJ-rework environments.
Availability
71V124SA10TYG8 is available at Aetrix Electronics and suitable for industrial PLCs, network interface cards, medical imaging control boards, and test & measurement equipment requiring stable component supply, long-lifecycle support, and RoHS-compliant packaging.
Supply support for 71V124SA10TYG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, infrastructure, and IoT applications.
The 71V124SA10TYG8 belongs to Renesas' legacy high-speed SRAM product line, engineered for deterministic, low-noise, asynchronous memory interfacing in mission-critical embedded systems where timing predictability and layout robustness are essential.
FAQ
What is the operating temperature range for the 71V124SA10TYG8?
The 71V124SA10TYG8 is rated for commercial temperature operation from 0°C to +70°C. It is not qualified for industrial temperature range (–40°C to +85°C); that variant is designated as 71V124SA10TYGI8. The datasheet specifies separate DC and AC characteristics for each grade, and mixing grades may result in timing violations or increased leakage.
Does the 71V124SA10TYG8 require a refresh circuit or clock signal?
No, the 71V124SA10TYG8 uses fully static CMOS memory cells and requires no refresh cycles or clock input. Its operation is purely asynchronous-address, CS, OE, and WE transitions directly control read/write behavior. This eliminates clock tree design complexity and power overhead associated with DRAM or pseudo-SRAM devices.
What is the significance of the center-power/center-ground pinout in the 71V124SA10TYG8?
The center-power/center-ground pinout places VDD on pins 13 and 20, and GND on pins 14 and 19-symmetrically positioned within the 32-pin SOJ array. This layout minimizes ground loop inductance and reduces simultaneous switching output (SSO) noise, improving signal integrity in high-speed memory buses where multiple bits toggle concurrently.
Can the 71V124SA10TYG8 be used with 5 V logic systems?
No, the 71V124SA10TYG8 is strictly a 3.3 V device with LVTTL-compatible I/O thresholds (VIH = 2.0 V min, VIL = 0.8 V max). Its absolute maximum input voltage is VDD + 0.5 V (≤4.1 V), and applying 5 V signals risks permanent damage. Level translation is mandatory for interfacing with 5 V microcontrollers or FPGAs.
What are the key timing differences between WE-controlled and CS-controlled write cycles for the 71V124SA10TYG8?
In WE-controlled writes, WE defines the write window while CS remains LOW; OE must be HIGH. In CS-controlled writes, CS defines the window while WE stays HIGH. The 71V124SA10TYG8 guarantees identical tWC = 10 ns and tAW = 7 ns for both modes, but tWHZ (WE-to-Hi-Z) is only relevant in WE-controlled mode and affects bus release timing-critical when sharing I/O lines with other peripherals.
71V124SA10TYG8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 32-BSOJ (0.300", 7.62mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 1Mbit
- Memory Organization:
- 128K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 3.15V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 32-SOJ
71V124SA10TYG8 FAQ
1.How can I place an order for 71V124SA10TYG8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V124SA10TYG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V124SA10TYG8 reliable?
The price and inventory of 71V124SA10TYG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V124SA10TYG8 is usually 5 days.
3.What payment methods are accepted for 71V124SA10TYG8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V124SA10TYG8 transactions.
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4.How is shipping managed for 71V124SA10TYG8?
71V124SA10TYG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V124SA10TYG8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V124SA10TYG8?
For technical support, including 71V124SA10TYG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V124SA10TYG8 requirements.
6.How does Aetrix verify that 71V124SA10TYG8 is sourced from the original manufacturer or authorized distributors?
All 71V124SA10TYG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V124SA10TYG8 meets industry standards.
7.What is the process for return or replacement of 71V124SA10TYG8?
All 71V124SA10TYG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V124SA10TYG8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V124SA10TYG8 part is unused and in its original packaging.
Return procedure for 71V124SA10TYG8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V124SA10TYG8 Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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M24C02-FMC6TG
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AT24CS02-SSHM-T
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93LC46BT-I/OT
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AT24C04C-SSHM-T
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