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Renesas 71V124SA12PHG8
- Part No.:
- 71V124SA12PHG8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 32-SOIC (0.400", 10.16mm Width)
- Datasheet:
-
71V124SA12PHG8.pdf
- Description:
- IC SRAM 1MBIT PARALLEL 32TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:3,364
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Product details
Overview
71V124SA12PHG8 from Renesas Electronics is a 128K × 8 (1 Mbit) high-speed CMOS static RAM with JEDEC center-power/ground pinout, 12 ns read/write cycle time, single 3.3 V supply, LVTTL-compatible I/O, and industrial-grade temperature support (–40°C to +85°C). It serves as fast, asynchronous main or buffer memory in network packet processors and real-time control systems requiring zero-refresh operation.
For engineers reviewing the 71V124SA12PHG8 datasheet, 71V124SA12PHG8 pinout, 71V124SA12PHG8 application, or 71V124SA12PHG8 equivalent, key selection criteria include access time (tAA = 12 ns), standby current (ISB1 = 10 mA), TSOP-32 package compatibility, and LVTTL-level interface timing margins under 3.3 V operation.
Technical Context
The 71V124SA12PHG8 implements fully static asynchronous architecture-no clocks or refresh cycles required-and uses high-reliability CMOS fabrication optimized for low noise and stable 3.3 V operation. Its JEDEC-standard center power/ground pinout minimizes simultaneous switching noise (SSN) during high-speed address/data transitions.
Control logic supports independent chip select (CS) and output enable (OE) with 5 ns OE-to-output delay (tOE), enabling precise bus sharing in multi-device systems. All inputs meet LVTTL voltage thresholds (VIH ≥ 2.0 V, VIL ≤ 0.8 V), and bidirectional I/Os drive ±4 mA/±8 mA loads while maintaining VOL ≤ 0.4 V and VOH ≥ 2.4 V at minimum VDD.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 8-bit (1,048,576-bit total); supports byte-wide data paths without external demultiplexing |
| Access Time (tAA) | 12 ns max at VDD = 3.15–3.6 V; defines minimum address hold before valid data appears on I/O |
| Read Cycle Time (tRC) | 12 ns max; sets shortest interval between successive read operations on same device |
| Supply Voltage | 3.15–3.6 V; compatible with standard 3.3 V rail tolerances and eliminates need for level shifters |
| Standby Current (ISB1) | 10 µA max (static full standby); enables ultra-low-power retention during system sleep modes |
| Operating Temperature | –40°C to +85°C; qualified for industrial environments including base station control and motor drives |
| I/O Compatibility | LVTTL; interfaces directly with FPGA I/O banks, microcontroller GPIOs, and ASIC peripherals without translation |
Pinout & Package
71V124SA12PHG8 is housed in a 32-pin Type II TSOP (PHG32) package with JEDEC-standard center power/ground layout-VDD on pins 16 and 24, GND on pins 13 and 20-reducing ground bounce and improving signal integrity.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address Inputs | 17-bit address bus supporting full 128K-word decoding; no external address latching required |
| I/O0–I/O7 | Bidirectional Data Bus | 8-bit LVTTL-compliant data path; tri-states automatically when CS or OE inactive |
| CS | Chip Select | Active-low enable; device enters high-Z standby when high, drawing only ISB1 = 10 µA |
| OE | Output Enable | Active-low control of output drivers; allows shared bus arbitration with 5 ns tOE delay |
| WE | Write Enable | Active-low write strobe; initiates write cycle overlapping with CS low; controls data capture timing |
| VDD | Power Supply | 3.3 V core supply; dual pins (16, 24) reduce IR drop and improve decoupling effectiveness |
| GND | Ground Reference | Signal and power return; dual pins (13, 20) minimize ground loop inductance and SSN |
Key Features
| Feature | Design Value |
|---|---|
| Center Power/Ground Pinout | Reduces simultaneous switching noise by >30% vs. corner-pin SOJ packages, critical for EMI-sensitive telecom boards |
| Zero-Refresh Static Operation | Eliminates DRAM controller complexity and refresh overhead in FPGA-based embedded systems |
| 5 ns Output Enable Delay (tOE) | Enables tight timing closure in 100+ MHz bus architectures with minimal glue logic |
| 10 µA Full Standby Current (ISB1) | Supports battery-backed operation in industrial PLCs with <1 µW standby power per memory device |
| LVTTL I/O Compatibility | Direct interface with Xilinx Artix-7, Intel MAX 10, and Renesas RA6M5 without level-shifting circuitry |
Applications
| Telecom Line Card Buffer | Industrial PLC Data Log |
|---|---|
Use Scenario: Storing packet headers and metadata in Ethernet switch line cards operating at 100 Mbps+ line rates. IC Role / Device Role / Timing Role: Asynchronous SRAM buffer between MAC layer and packet processor; absorbs bursty traffic with zero latency penalty. Use Value: 12 ns tAA and tRC enable sub-microsecond memory access, sustaining >80 MB/s sustained throughput without wait states. | Use Scenario: Capturing sensor timestamps and process variables in programmable logic controllers deployed in factory automation. IC Role / Device Role / Timing Role: Nonvolatile shadow RAM holding runtime configuration and last-known-good state during brownouts. Use Value: 10 µA ISB1 current allows >10-year backup battery life; –40°C to +85°C rating ensures reliability in unconditioned control cabinets. |
| Medical Imaging Frame Store | Avionics Display Controller Cache |
Use Scenario: Temporary storage of digitized ultrasound frames prior to GPU-accelerated rendering in portable diagnostic devices. IC Role / Device Role / Timing Role: High-bandwidth pixel buffer interfacing directly with ADC output and display engine DMA channels. Use Value: LVTTL compatibility eliminates level translators; 3.3 V operation matches modern imaging SoC I/O voltage domains. | Use Scenario: Caching navigation map tiles and flight instrument overlays in certified cockpit display units with strict DO-254 timing constraints. IC Role / Device Role / Timing Role: Deterministic-access scratchpad memory for real-time graphics composition engine. Use Value: Fully static architecture guarantees worst-case 12 ns access-no jitter or refresh-induced latency variation affecting safety-critical rendering. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62128EV30LL-45ZSXI | 45 ns access time; 5 V tolerant I/O; 32-pin SOIC package | Designed for legacy 5 V systems; lacks LVTTL compatibility and center-power pinout | Select only if upgrading from older 5 V designs where board layout cannot accommodate TSOP-32 or 3.3 V rails |
| AS6C1008-12ZIN | 12 ns access; 3.3 V only; 32-pin SOP package; no center-power pinout | Higher ICC (140 mA vs. 100 mA at fMAX); lacks industrial temp grade certification | Acceptable for commercial-temp consumer electronics where cost is primary; not recommended for industrial or automotive use |
Compared with CY62128EV30LL-45ZSXI and AS6C1008-12ZIN, the 71V124SA12PHG8 delivers superior noise immunity via center-power pinout, guaranteed industrial temperature operation, and lower dynamic power-making it optimal for new designs targeting telecom infrastructure and ruggedized embedded control.
Availability
71V124SA12PHG8 is available at Aetrix Electronics and suitable for telecom infrastructure, industrial PLCs, and medical imaging equipment requiring stable component supply across extended product lifecycles.
Supply support for 71V124SA12PHG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering trusted embedded solutions for automotive, industrial, infrastructure, and IoT applications.
The IDT71V124 family-now part of Renesas' legacy high-speed memory portfolio-was engineered specifically for deterministic, low-noise, zero-refresh memory subsystems in real-time networking and control equipment.
FAQ
What is the maximum operating frequency supported by the 71V124SA12PHG8?
The 71V124SA12PHG8 does not operate from a clock signal-it is an asynchronous SRAM. Its performance is defined by timing parameters: maximum read/write cycle time (tRC) is 12 ns, corresponding to an effective upper limit of ~83 MHz for consecutive accesses. Address setup (tAS = 0 ns) and hold (tOH = 4 ns) times allow integration into high-speed bus systems without added wait states.
Does the 71V124SA12PHG8 require external refresh circuitry?
No, the 71V124SA12PHG8 is a fully static RAM and requires no refresh cycles or clocks. Its internal CMOS latches retain data indefinitely as long as VDD remains within specification (3.15–3.6 V) and ambient temperature stays within –40°C to +85°C. This eliminates refresh overhead in FPGA- or MCU-based controllers.
Can the 71V124SA12PHG8 be used with 5 V logic interfaces?
No-the 71V124SA12PHG8 is strictly LVTTL-compatible with 3.3 V signaling: VIH min = 2.0 V, VIL max = 0.8 V, and absolute max input voltage is VDD + 0.5 V (≤4.1 V). Direct connection to 5 V logic risks damage or undefined behavior; level translation is mandatory for mixed-voltage systems.
What is the meaning of "PHG8" in the part number 71V124SA12PHG8?
In 71V124SA12PHG8, "PHG" denotes the 32-pin Type II TSOP package (PHG32), and "8" indicates tape-and-reel packaging format (8 mm carrier tape, 1,000 units/reel). The "SA12" suffix specifies 12 ns speed grade and commercial temperature range (0°C to +70°C), though this variant is also qualified for industrial operation per Renesas documentation.
How does the center power/ground pinout improve system performance in the 71V124SA12PHG8?
The center power/ground pinout in the 71V124SA12PHG8 reduces simultaneous switching noise (SSN) by shortening current return paths and balancing inductance across the package. Measured SSN reduction exceeds 30% versus corner-pin SOJ layouts-critical for maintaining signal integrity in high-density PCBs used in telecom line cards and avionics displays.
71V124SA12PHG8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 32-SOIC (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 1Mbit
- Memory Organization:
- 128K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 12ns
- Access Time:
- 12 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 32-TSOP II
71V124SA12PHG8 FAQ
1.How can I place an order for 71V124SA12PHG8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V124SA12PHG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V124SA12PHG8 reliable?
The price and inventory of 71V124SA12PHG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V124SA12PHG8 is usually 5 days.
3.What payment methods are accepted for 71V124SA12PHG8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V124SA12PHG8 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V124SA12PHG8?
71V124SA12PHG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V124SA12PHG8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V124SA12PHG8?
For technical support, including 71V124SA12PHG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V124SA12PHG8 requirements.
6.How does Aetrix verify that 71V124SA12PHG8 is sourced from the original manufacturer or authorized distributors?
All 71V124SA12PHG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V124SA12PHG8 meets industry standards.
7.What is the process for return or replacement of 71V124SA12PHG8?
All 71V124SA12PHG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V124SA12PHG8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V124SA12PHG8 part is unused and in its original packaging.
Return procedure for 71V124SA12PHG8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V124SA12PHG8 Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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