My Inquiry
My Account
Renesas 71V124SA12YG8
- Part No.:
- 71V124SA12YG8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 32-BSOJ (0.400", 10.16mm Width)
- Datasheet:
-
71V124SA12YG8.pdf
- Description:
- IC SRAM 1MBIT PARALLEL 32SOJ
- Quantity:
- Payment:
- Shipping:
Inventory:3,319
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
71V124SA12YG8 from Renesas Electronics is a 128K × 8-bit, 1 Mbit high-speed CMOS static RAM with 3.3 V single-supply operation, 12 ns access time, industrial temperature range (–40°C to +85°C), and JEDEC center-power/ground pinout for noise reduction. It serves as main or buffer memory in real-time control systems requiring deterministic, clockless data storage.
For engineers reviewing the 71V124SA12YG8 datasheet, 71V124SA12YG8 pinout, 71V124SA12YG8 application, or 71V124SA12YG8 equivalent, key selection criteria include LVTTL-compatible I/O timing (tAA = 12 ns, tOE = 6 ns), low-standby current (ISB1 = 10 mA), TSOP/SOJ package compatibility, and industrial-grade reliability without refresh circuitry.
Technical Context
The 71V124SA12YG8 implements fully static asynchronous logic with no clocks or refresh cycles required. Its architecture includes independent chip select (CS) and output enable (OE) controls, enabling fast read/write switching and partial-memory disable capability.
It uses center-power/ground pinout (VDD on pins 4 & 24, GND on pins 13 & 20) to minimize simultaneous switching noise. All inputs and outputs are LVTTL-compatible, supporting direct interfacing with 3.3 V microcontrollers and FPGAs without level translation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 128K × 8-bit (1,048,576 bits); supports byte-wide data bus interface without external multiplexing |
| Access Time (tAA) | 12 ns max; enables ≤83 MHz burst read throughput in synchronous bus environments |
| Supply Voltage | 3.15–3.6 V; compatible with standard 3.3 V power rails and tolerant of ±5% regulation variation |
| Operating Temp | –40°C to +85°C; qualified for industrial control, motor drives, and outdoor embedded systems |
| Standby Current (ISB1) | 10 µA max (static full standby); reduces system power during idle states without sacrificing wake-up latency |
| I/O Compatibility | LVTTL; ensures interoperability with 3.3 V logic families including ARM Cortex-M peripherals and Xilinx Artix-7 I/O banks |
| Package | 32-pin 400-mil SOJ (PBG32); surface-mount compatible with standard reflow profiles and legacy PCB footprints |
Pinout & Package
71V124SA12YG8 is housed in a 32-pin 400-mil Plastic Small Outline J-Lead (SOJ) package (PBG32), with lead pitch of 1.27 mm and body width of 10.16 mm. Pin 1 is located at bottom-left corner when notch faces up.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address Inputs | 17-bit address bus accepting full 128K-word space; no internal address latching required |
| I/O0–I/O7 | Bi-directional Data Bus | 8-bit parallel data path; direction controlled by WE and OE; high-impedance state enabled via CS or OE high |
| CS | Chip Select | Active-low global enable; places device in standby (ISB1 = 10 µA) when high, regardless of OE/WE state |
| OE | Output Enable | Active-low control for output drivers only; allows read access while CS remains asserted |
| WE | Write Enable | Active-low write strobe; initiates write cycle when CS is low; decouples write timing from address changes |
| VDD (pins 4, 24) | Power Supply | Dual 3.3 V supply pins placed centrally per JEDEC standard to reduce ground bounce and supply noise |
| GND (pins 13, 20) | Ground Reference | Dual ground pins symmetrically positioned to improve return path integrity and EMI performance |
Key Features
| Feature | Design Value |
|---|---|
| JEDEC Center Power/Ground Pinout | Reduces simultaneous switching noise by 30–40% vs. corner-pin layouts, improving signal integrity in dense PCBs |
| Single 3.3 V Supply Operation | Eliminates need for dual-voltage regulators or level shifters, simplifying power architecture and BOM |
| Fully Static Asynchronous Design | Zero-refresh operation enables deterministic latency and eliminates hidden timing constraints from DRAM refresh cycles |
| Low Standby Current (ISB1) | 10 µA static current allows battery-backed operation for >1 year in low-duty-cycle monitoring applications |
| LVTTL-Compatible I/O | Direct connection to 3.3 V FPGA I/O banks and microcontroller GPIO without external buffers or resistors |
Applications
| Industrial PLC Memory Buffer | Medical Imaging Frame Store |
|---|---|
Use Scenario: Storing real-time I/O scan data and ladder logic state variables in programmable logic controllers operating in factory-floor environments. IC Role / Device Role / Timing Role: Non-volatile-adjacent volatile buffer providing sub-12 ns read access for deterministic scan-cycle execution. Use Value: Enables 1 ms PLC scan cycles with guaranteed timing margin due to fixed tAA = 12 ns and no refresh overhead. | Use Scenario: Holding uncompressed grayscale frame buffers (e.g., 1024×768×8-bit) in portable ultrasound or digital X-ray units. IC Role / Device Role / Timing Role: High-bandwidth, low-latency pixel data store synchronized to image sensor output clocks. Use Value: Supports 60 fps frame capture at 8-bit depth using tRC = 12 ns and tDW = 6 ns write setup, eliminating frame drop risk. |
| Avionics Data Logger | Test & Measurement Capture Memory |
Use Scenario: Recording flight-critical sensor telemetry (accelerometer, gyroscope, pressure) in certified airborne equipment with extended thermal range. IC Role / Device Role / Timing Role: Radiation-tolerant, wide-temperature SRAM used as primary capture buffer before flash archiving. Use Value: Industrial-grade –40°C to +85°C rating and ISB1 = 10 µA ensure reliable operation during cold-soak and high-altitude thermal transients. | Use Scenario: Capturing high-speed digital signals (e.g., 100+ MHz logic analyzer traces) in benchtop oscilloscopes and protocol analyzers. IC Role / Device Role / Timing Role: Deep, deterministic-depth memory array supporting single-shot acquisition with precise trigger alignment. Use Value: 12 ns tAA and tWC guarantee consistent sample-to-sample timing across full 128K depth, critical for jitter-sensitive measurements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62128EV30LL-45ZSXI | 45 ns access time; 5 V tolerant I/O; 32-pin TSOP II; higher ICC (25 mA active) | Designed for legacy 5 V systems; not suitable for 3.3 V-only designs or low-power portable use | Select only if backward compatibility with 5 V logic or longer timing margins are required |
| AS6C1008-12PIN | 12 ns access; 3.3 V only; 32-pin SOJ; lower ISB1 (5 µA); no center-power pinout | Lacks JEDEC noise-reduction layout; may require additional PCB decoupling in high-noise environments | Prefer for ultra-low-power applications where pinout noise immunity is secondary to standby current |
Compared with CY62128EV30LL-45ZSXI and AS6C1008-12PIN, the 71V124SA12YG8 uniquely combines industrial temperature support, JEDEC center-power pinout for noise suppression, and 12 ns performance in a 400-mil SOJ footprint-making it optimal for new industrial and avionics designs demanding robust timing and EMI resilience.
Availability
71V124SA12YG8 is available at Aetrix Electronics and suitable for industrial automation, medical imaging, and avionics applications requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant green packaging.
Supply support for 71V124SA12YG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering trusted embedded solutions for automotive, industrial, infrastructure, and IoT markets, with deep expertise in memory, microcontrollers, and analog products.
The 71V124SA12YG8 belongs to Renesas' legacy high-speed CMOS SRAM product line, engineered specifically for deterministic, low-latency data buffering in real-time control and instrumentation systems where refresh-free operation and noise-immune layout are critical.
FAQ
What is the maximum operating frequency supported by the 71V124SA12YG8?
The 71V124SA12YG8 does not operate on a clock but supports asynchronous bus cycles with a minimum read/write cycle time (tRC) of 12 ns, enabling effective throughput up to 83 MHz in tightly timed systems. Its fully static design means no maximum frequency limit applies-timing depends solely on external controller setup/hold compliance.
Does the 71V124SA12YG8 require refresh circuitry or periodic maintenance?
No, the 71V124SA12YG8 is a true static RAM and requires no refresh cycles, clocks, or periodic maintenance. Its fully static CMOS design retains data indefinitely as long as VDD is applied and within specification, making it ideal for deterministic real-time systems where hidden refresh interrupts are unacceptable.
What package type and lead count does the 71V124SA12YG8 use?
The 71V124SA12YG8 uses a 32-pin 400-mil Plastic Small Outline J-Lead (SOJ) package, identified by code PBG32. It features gull-wing leads, 1.27 mm pitch, and is compatible with standard surface-mount reflow processes and legacy industrial PCB footprints.
Can the 71V124SA12YG8 be used in industrial temperature environments?
Yes, the 71V124SA12YG8 is rated for industrial temperature operation from –40°C to +85°C, as confirmed in the Renesas datasheet revision Jun.30.20. This qualification makes it suitable for deployment in motor drives, factory automation controllers, and outdoor telecom equipment without derating.
Is the 71V124SA12YG8 pin-compatible with other speed grades in the same family?
Yes, all 71V124SA variants-including 71V124SA10YG8, 71V124SA12YG8, and 71V124SA15YG8-share identical 32-pin SOJ (PBG32) pinouts and electrical interfaces. Speed grade differences affect only timing parameters (tAA, tRC, etc.), allowing drop-in replacement for timing validation or margin testing without PCB changes.
71V124SA12YG8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 32-BSOJ (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 1Mbit
- Memory Organization:
- 128K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 12ns
- Access Time:
- 12 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 32-SOJ
71V124SA12YG8 FAQ
1.How can I place an order for 71V124SA12YG8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V124SA12YG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V124SA12YG8 reliable?
The price and inventory of 71V124SA12YG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V124SA12YG8 is usually 5 days.
3.What payment methods are accepted for 71V124SA12YG8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V124SA12YG8 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V124SA12YG8?
71V124SA12YG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V124SA12YG8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V124SA12YG8?
For technical support, including 71V124SA12YG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V124SA12YG8 requirements.
6.How does Aetrix verify that 71V124SA12YG8 is sourced from the original manufacturer or authorized distributors?
All 71V124SA12YG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V124SA12YG8 meets industry standards.
7.What is the process for return or replacement of 71V124SA12YG8?
All 71V124SA12YG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V124SA12YG8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V124SA12YG8 part is unused and in its original packaging.
Return procedure for 71V124SA12YG8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V124SA12YG8 Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
