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Renesas 71V124SA15TYG
- Part No.:
- 71V124SA15TYG
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 32-BSOJ (0.300", 7.62mm Width)
- Datasheet:
-
71V124SA15TYG.pdf
- Description:
- IC SRAM 1MBIT PARALLEL 32SOJ
- Quantity:
- Payment:
- Shipping:
Inventory:1,617
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Product details
Overview
71V124SA15TYG from Renesas Electronics is a 128K × 8 (1 Mbit), 3.3 V CMOS static RAM with JEDEC center-power/ground pinout, 15 ns read/write cycle time, and industrial-grade LVTTL-compatible I/O. It operates across 0°C to +70°C, supports asynchronous operation without clocks or refresh, and targets high-speed buffering in telecom line cards and industrial controllers.
For engineers reviewing the 71V124SA15TYG datasheet, 71V124SA15TYG pinout, 71V124SA15TYG application, or 71V124SA15TYG equivalent, this page delivers verified timing specs, SOJ-32 package mapping, truth-table–based control logic behavior, and direct alternatives for memory subsystem redesigns requiring low-noise 3.3 V SRAM.
Technical Context
The 71V124SA15TYG implements fully static asynchronous architecture with independent chip select (CS) and output enable (OE) controls, enabling fast read access (tAA ≤ 15 ns) and write cycle completion (tWC ≤ 15 ns). Its center-power/ground pinout reduces simultaneous switching noise by minimizing power/ground loop inductance.
It uses single 3.3 V supply (VDD = 3.15–3.6 V), supports LVTTL input thresholds (VIH ≥ 2.0 V, VIL ≤ 0.8 V), and features three standby current modes: dynamic standby (ISB ≤ 40 mA at fMAX), full static standby (ISB1 = 10 mA), and deselected high-Z state.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 8-bit (1,048,576-bit total); supports byte-wide data bus interfacing without external demultiplexing |
| Access Time (tAA) | 15 ns max; defines minimum address-to-valid-data delay during read, critical for CPU wait-state configuration |
| Read Cycle Time (tRC) | 15 ns max; determines maximum sustained read throughput (66.7 MHz random access rate) |
| Supply Voltage | 3.15–3.6 V; compatible with standard 3.3 V logic rails and tolerant of ±5% regulation variation |
| Operating Temperature | 0°C to +70°C; validated for commercial-grade embedded systems with passive cooling |
| I/O Compatibility | LVTTL; ensures direct interface with 3.3 V microcontrollers, FPGAs, and ASICs without level-shifting |
| Standby Current (ISB1) | 10 µA typical; enables ultra-low-power retention during system sleep modes |
Pinout & Package
71V124SA15TYG is housed in a 32-pin Plastic SOJ (PJG32) package with 300-mil body width and gull-wing leads. The JEDEC-standard center-power/ground layout places VDD on pins 24 and 28, and GND on pins 13 and 20 - reducing ground bounce and improving signal integrity in dense PCB layouts.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address Inputs | 17-bit address bus supporting full 128K-word decoding; no internal latching required |
| I/O0–I/O7 | Bidirectional Data Bus | 8-bit LVTTL-compliant data path; tri-stated when CS or OE inactive |
| CS | Chip Select | Active-low enable; device enters standby (high-Z I/O) when high, consuming ISB1 = 10 µA |
| OE | Output Enable | Active-low control for output drivers only; allows read data gating without disabling chip |
| WE | Write Enable | Active-low write strobe; initiates write cycle when CS and WE both low; tWP ≥ 10 ns required |
| VDD (Pins 24, 28) | Power Supply | Dual VDD pins reduce IR drop and improve decoupling effectiveness near memory array core |
| GND (Pins 13, 20) | Ground Reference | Dual GND pins symmetrically placed opposite VDD to minimize ground loop inductance |
Key Features
| Feature | Design Value |
|---|---|
| JEDEC center power/ground pinout | Reduces simultaneous switching noise by >30% vs. corner-pin layouts, enabling cleaner signal integrity in high-density backplanes |
| Asynchronous static operation | Eliminates need for clock distribution, refresh circuitry, or timing-critical setup/hold windows beyond datasheet AC specs |
| Separate CS and OE controls | Enables partial-memory read masking (e.g., burst reads with OE toggling) while keeping chip active for faster subsequent accesses |
| Low-power standby modes | Full static standby draws only 10 µA - suitable for battery-backed real-time clock buffers and firmware storage |
| LVTTL I/O compatibility | Direct interface with Xilinx Spartan-6, Intel MAX 10, and Renesas RZ/A series without voltage translation |
Applications
| Telecom Line Card Buffering | Industrial PLC Data Logging |
|---|---|
|
Use Scenario: Storing packet header metadata and temporary frame buffers in T1/E1 interface modules. IC Role / Device Role / Timing Role: Asynchronous 1-Mbit scratchpad memory with deterministic 15 ns access, synchronized to FPGA-controlled DMA bursts. Use Value: Eliminates wait states for ARM9-based control processors running at 200 MHz, sustaining 66 MB/s peak read bandwidth. |
Use Scenario: Capturing sensor timestamped values during cyclic scan intervals in DIN-rail mounted controllers. IC Role / Device Role / Timing Role: Non-refreshing data buffer holding 128K samples before SD card transfer; powered from isolated 3.3 V rail. Use Value: Enables zero-latency write capture under 10 µs interrupt latency constraints, with <10 µA retention current during idle cycles. |
| Medical Imaging Front-End | Automotive ADAS Preprocessing |
|
Use Scenario: Holding raw pixel rows from CMOS image sensors prior to FPGA-based histogram equalization. IC Role / Device Role / Timing Role: High-reliability, low-noise SRAM interfaced directly to Xilinx Artix-7 I/O banks using LVTTL signaling. Use Value: Center-power/ground layout suppresses EMI-induced bit errors in analog-sensitive imaging chains operating near 100 MHz pixel clocks. |
Use Scenario: Caching radar echo samples between ADC acquisition and DSP-based CFAR detection in 77 GHz modules. IC Role / Device Role / Timing Role: Low-jitter, deterministic-access memory ensuring time-aligned sample buffering for FFT windowing. Use Value: 15 ns tAA guarantees sub-cycle alignment with 66 MHz DSP memory bus, avoiding pipeline stalls in real-time object tracking. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed asynchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62128EV30LL-45ZSXI | 512K × 8 organization, 45 ns access, 2.5 V supply; larger density but slower and lower-voltage | Suitable for legacy 2.5 V systems where speed is secondary to capacity; not pin-compatible | Select only if migrating from older Cypress designs and board redesign is acceptable |
| IS61LV12816AL-12TQLI | 128K × 16 organization, 12 ns access, 3.3 V supply; wider bus, faster timing, same package footprint | Requires data bus width adaptation (16-bit vs. 8-bit); better for FPGA co-processor interfaces needing higher bandwidth | Prefer when upgrading throughput without changing PCB layout - same SOJ-32 pin count but different pin functions |
Compared with CY62128EV30LL-45ZSXI and IS61LV12816AL-12TQLI, the 71V124SA15TYG offers optimal balance of 8-bit bus simplicity, 15 ns timing, and proven noise immunity via center-power layout - making it ideal for cost-sensitive, space-constrained commercial designs where LVTTL compatibility and SOJ-32 fit are mandatory.
Availability
71V124SA15TYG is available at Aetrix Electronics and suitable for telecom infrastructure, industrial automation, and medical imaging systems requiring stable component supply, long-lifecycle support, and RoHS-compliant packaging.
Supply support for 71V124SA15TYG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering trusted embedded solutions for automotive, industrial, infrastructure, and IoT applications, with deep expertise in memory, microcontrollers, and analog products.
The IDT71V124 family - now part of Renesas' legacy high-speed SRAM portfolio - was designed specifically for noise-sensitive, high-throughput embedded systems requiring deterministic asynchronous access and JEDEC-standardized low-noise pinouts.
FAQ
What is the maximum operating frequency supported by the 71V124SA15TYG?
The 71V124SA15TYG does not operate on a clock; it is an asynchronous SRAM. Its maximum effective random-access throughput is determined by its 15 ns read cycle time (tRC), yielding a theoretical upper limit of 66.7 MHz for consecutive reads. Sustained bandwidth depends on address transition timing and bus protocol overhead, not a clock frequency specification.
Does the 71V124SA15TYG require refresh circuitry or periodic memory maintenance?
No, the 71V124SA15TYG is a fully static RAM and requires no refresh cycles, clocks, or periodic maintenance. Its CMOS latch-based memory cells retain data indefinitely as long as VDD remains within 3.15–3.6 V and temperature stays within 0°C to +70°C - eliminating complexity in FPGA or microcontroller memory controllers.
Can the 71V124SA15TYG be used in industrial temperature environments?
The 71V124SA15TYG is specified for commercial temperature range (0°C to +70°C). For industrial operation (–40°C to +85°C), Renesas offers the variant 71V124SA15TYGI - same pinout and timing but qualified across the extended range. Using the TYG version outside its rated range may result in timing violations or data retention failure.
What is the purpose of having two VDD and two GND pins on the 71V124SA15TYG SOJ package?
The dual VDD (pins 24, 28) and dual GND (pins 13, 20) implement JEDEC's center-power/ground pinout standard. This layout minimizes power/ground loop inductance and reduces simultaneous switching noise (SSN) by balancing current paths across the die - a key factor in maintaining signal integrity for high-speed 3.3 V LVTTL interfaces.
How does the 71V124SA15TYG handle write operations when both CS and WE are asserted?
Per the truth table, a write occurs only when CS = L and WE = L simultaneously. During that window, I/O0–I/O7 act as inputs, and data is latched on the falling edge of WE. Address must be stable before WE falls (tAS ≥ 0 ns), and data must remain valid for tDW ≥ 7 ns after WE goes high. OE must be high during writes to prevent bus contention.
71V124SA15TYG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 32-BSOJ (0.300", 7.62mm Width)
- Packaging:
- Tube
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 1Mbit
- Memory Organization:
- 128K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 15 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 32-SOJ
71V124SA15TYG FAQ
1.How can I place an order for 71V124SA15TYG through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V124SA15TYG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V124SA15TYG reliable?
The price and inventory of 71V124SA15TYG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V124SA15TYG is usually 5 days.
3.What payment methods are accepted for 71V124SA15TYG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V124SA15TYG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V124SA15TYG?
71V124SA15TYG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V124SA15TYG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V124SA15TYG?
For technical support, including 71V124SA15TYG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V124SA15TYG requirements.
6.How does Aetrix verify that 71V124SA15TYG is sourced from the original manufacturer or authorized distributors?
All 71V124SA15TYG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V124SA15TYG meets industry standards.
7.What is the process for return or replacement of 71V124SA15TYG?
All 71V124SA15TYG units undergo pre-shipment inspection (PSI). If there is an issue with 71V124SA15TYG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V124SA15TYG part is unused and in its original packaging.
Return procedure for 71V124SA15TYG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V124SA15TYG Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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24LC01BT-I/OT
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M24C02-FMC6TG
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AT24CS02-SSHM-T
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93LC46BT-I/OT
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AT24C04C-SSHM-T
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24LC01BT-I/SN
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24AA02UIDT-I/OT
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AT24C08C-STUM-T
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