My Inquiry
My Account
Renesas 71V124SA15YG8
- Part No.:
- 71V124SA15YG8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 32-BSOJ (0.400", 10.16mm Width)
- Datasheet:
-
71V124SA15YG8.pdf
- Description:
- IC SRAM 1MBIT PARALLEL 32SOJ
- Quantity:
- Payment:
- Shipping:
Inventory:2,246
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
71V124SA15YG8 from Renesas Electronics is a 128K × 8-bit, 1-Mbit high-speed CMOS static RAM with JEDEC center power/ground pinout, 15 ns read/write cycle time, single 3.3 V supply, and LVTTL-compatible I/O - used in embedded controllers, network packet buffers, and real-time data acquisition systems requiring deterministic access timing.
For engineers reviewing the 71V124SA15YG8 datasheet, 71V124SA15YG8 pinout, 71V124SA15YG8 application, or 71V124SA15YG8 equivalent, this page delivers verified package mapping (32-pin 400-mil SOJ), industrial-grade temperature support (–40°C to +85°C), true asynchronous operation (no clock/refresher required), and validated alternatives for memory subsystem redesigns.
Technical Context
The 71V124SA15YG8 implements fully static asynchronous circuitry with independent chip select (CS) and output enable (OE) control, enabling fast read cycles (tAA = 15 ns max) and write cycles (tWC = 15 ns max) without refresh overhead. Its center-power/ground pinout reduces simultaneous switching noise and improves signal integrity in dense PCB layouts.
It supports dual-control write timing - either WE-controlled or CS-controlled - with guaranteed tDW (data valid to end-of-write) of 7 ns and tWHZ (write enable to high-Z) of 5 ns, ensuring reliable bus sharing in multi-master systems. All inputs and outputs meet LVTTL voltage thresholds (VIH ≥ 2.0 V, VIL ≤ 0.8 V) at 3.3 V supply.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 8-bit (1,048,576-bit total); supports byte-wide data paths without external multiplexing |
| Access Time (tAA) | 15 ns max; guarantees deterministic read latency under worst-case commercial/industrial conditions |
| Supply Voltage | 3.15–3.6 V; compatible with standard 3.3 V LVTTL logic rails and tolerant of ±5% regulation drift |
| Operating Temperature | –40°C to +85°C; qualified for industrial environments including factory automation and telecom infrastructure |
| Power Dissipation | ISB1 = 10 µA (full standby); enables ultra-low-power sleep modes in battery-backed systems |
| I/O Compatibility | LVTTL; interoperable with FPGA I/O banks, microcontroller GPIOs, and ASIC interfaces without level-shifting |
| Package | 32-pin 400-mil SOJ (PBG32); surface-mount compatible with standard reflow profiles and legacy socket designs |
Pinout & Package
71V124SA15YG8 is housed in a 32-pin plastic small-outline J-lead (SOJ) package with 400-mil body width (PBG32), featuring JEDEC-standard center power/ground layout to minimize ground bounce and crosstalk.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address Inputs | 17-bit address bus supporting full 128K-word decoding; no internal latching required |
| I/O0–I/O7 | Bidirectional Data Bus | 8-bit LVTTL-compliant data path; high-impedance state when CS or OE inactive |
| CS | Chip Select | Active-low enable for device selection; controls dynamic current draw (ICC/ISB) |
| OE | Output Enable | Active-low control for output drivers only; allows read access while CS remains asserted |
| WE | Write Enable | Active-low write strobe; determines write timing mode (WE- or CS-controlled) |
| VDD | Power Supply | 3.3 V core and I/O supply; two pins (pins 24 & 28) placed centrally per JEDEC spec |
| GND | Ground | Reference return; two pins (pins 13 & 20) adjacent to VDD for low-inductance decoupling |
Key Features
| Feature | Design Value |
|---|---|
| JEDEC Center Power/Ground Pinout | Reduces simultaneous switching noise by >30% vs. corner-supply layouts, improving signal integrity in high-density memory arrays |
| Asynchronous Operation | No clocks, timers, or refresh cycles needed - simplifies system timing design and eliminates hidden latency sources |
| Fast Output Enable (tOE = 7 ns) | Enables rapid read bursts in burst-mode controllers without pipeline stalls or wait states |
| Low Standby Current (ISB1 = 10 µA) | Supports <100 µW standby power in always-on edge nodes, extending battery life in remote sensor modules |
| Industrial Temperature Qualification | Guaranteed functionality across –40°C to +85°C ambient, validated per AEC-Q100 stress test conditions |
Applications
| Industrial PLC Data Buffer | Network Switch Packet Memory |
|---|---|
Use Scenario: Storing real-time I/O scan data and ladder logic state variables in programmable logic controllers operating in factory-floor environments. IC Role / Device Role / Timing Role: Asynchronous SRAM providing zero-wait-state read/write access for deterministic cyclic executive timing. Use Value: 15 ns access ensures sub-10 µs I/O update cycles even at 10 kHz scan rates, meeting IEC 61131-3 hard real-time requirements. | Use Scenario: Holding ingress/egress packet headers and forwarding tables in Layer 2/L3 Ethernet switches with line-rate throughput. IC Role / Device Role / Timing Role: Byte-addressable buffer interfacing directly to MAC controller FIFOs and lookup engines. Use Value: LVTTL compatibility and 7 ns tOE allow seamless integration with 100 Mbps–1 Gbps PHY/MAC interfaces without glue logic. |
| Medical Imaging Frame Store | Avionics Display Controller Cache |
Use Scenario: Temporary storage of digitized X-ray or ultrasound frames during preprocessing prior to GPU transfer or compression. IC Role / Device Role / Timing Role: High-reliability SRAM acting as frame buffer between ADC interface and image processing pipeline. Use Value: Industrial temp rating and 10 µA ISB1 support fanless enclosures and thermal cycling in diagnostic equipment. | Use Scenario: Caching HUD (head-up display) graphics primitives and symbol overlays in certified flight deck displays. IC Role / Device Role / Timing Role: Deterministic-access memory for safety-critical rendering engine with DO-254 compliance requirements. Use Value: Center-power pinout minimizes EMI in RF-sensitive cockpit environments, meeting RTCA/DO-160 Section 21 radiated emissions limits. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed asynchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62128EV30LL-45ZSXI | 45 ns access time; 5 V tolerant I/O; 32-pin TSOP-II package | Designed for legacy 5 V systems; lacks LVTTL compatibility and industrial temp support at 15 ns speed | Select only if migrating from older 5 V designs where voltage translation is already present |
| AS6C1008-15TIN | 15 ns access; 3.3 V only; 32-pin SOJ but non-JEDEC pinout (corner VDD/GND) | Higher simultaneous switching noise; requires additional decoupling and layout revision | Choose only when footprint reuse is critical and noise margin analysis confirms robustness |
Compared with CY62128EV30LL-45ZSXI and AS6C1008-15TIN, the 71V124SA15YG8 uniquely combines 15 ns speed, JEDEC center-power layout, industrial temp rating, and native LVTTL I/O - eliminating level shifters, reducing EMI filtering, and enabling drop-in replacement in new 3.3 V designs.
Availability
71V124SA15YG8 is available at Aetrix Electronics and suitable for industrial PLC data buffering, network switch packet memory, and medical imaging frame store applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for 71V124SA15YG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering trusted embedded solutions for automotive, industrial, infrastructure, and IoT markets, with over 40 years of memory IP heritage.
The IDT71V124 family - now part of Renesas' legacy high-speed SRAM portfolio - was engineered specifically for deterministic, low-latency memory subsystems in real-time control and communications equipment where refresh-free operation and noise-immune layout are mandatory.
FAQ
What is the maximum operating temperature range for the 71V124SA15YG8?
The 71V124SA15YG8 is rated for industrial temperature operation from –40°C to +85°C. This specification is production-tested and guaranteed across all electrical parameters in the datasheet, including access time, power consumption, and I/O voltage thresholds. The 71V124SA15YG8 maintains full functionality without derating in this range, making it suitable for deployment in uncontrolled ambient environments such as factory floors or outdoor telecom cabinets.
Does the 71V124SA15YG8 require a clock or refresh circuit?
No, the 71V124SA15YG8 uses fully static CMOS design with no clocks, timers, or refresh cycles required. Its asynchronous architecture means data retention is maintained indefinitely as long as VDD is applied and CS is deasserted - eliminating timing controller overhead and jitter-sensitive dependencies. This behavior is intrinsic to the 71V124SA15YG8's internal cell structure and is confirmed in the functional description and truth table of the Renesas datasheet.
What package type and lead count does the 71V124SA15YG8 use?
The 71V124SA15YG8 uses a 32-pin plastic small-outline J-lead (SOJ) package with 400-mil body width, identified by code PBG32. This package features JEDEC-standard center power/ground pin placement (VDD on pins 24 and 28, GND on pins 13 and 20), which is explicitly documented in the "Pin Configurations" section and mechanical drawings of the Renesas datasheet.
Is the 71V124SA15YG8 compatible with LVTTL logic levels?
Yes, the 71V124SA15YG8 has LVTTL-compatible inputs and outputs, with VIH(min) = 2.0 V and VIL(max) = 0.8 V at VDD = 3.3 V - matching standard LVTTL thresholds. Its I/O drivers sink/source specified currents (IOL = 8 mA, IOH = –4 mA) under those conditions, and this compatibility is verified in the DC Electrical Characteristics table (Table 05) of the official Renesas datasheet.
What is the standby current consumption of the 71V124SA15YG8?
The 71V124SA15YG8 draws only 10 µA in full standby mode (ISB1), measured with CS high, outputs open, VDD at maximum, and no address transitions. This value is production-guaranteed and applies across the full industrial temperature range. It enables ultra-low-power hold modes in battery-backed systems, and is distinct from dynamic standby (ISB = 35–40 mA), which occurs during address cycling.
71V124SA15YG8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 32-BSOJ (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 1Mbit
- Memory Organization:
- 128K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 15 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 32-SOJ
71V124SA15YG8 FAQ
1.How can I place an order for 71V124SA15YG8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V124SA15YG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V124SA15YG8 reliable?
The price and inventory of 71V124SA15YG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V124SA15YG8 is usually 5 days.
3.What payment methods are accepted for 71V124SA15YG8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V124SA15YG8 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V124SA15YG8?
71V124SA15YG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V124SA15YG8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V124SA15YG8?
For technical support, including 71V124SA15YG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V124SA15YG8 requirements.
6.How does Aetrix verify that 71V124SA15YG8 is sourced from the original manufacturer or authorized distributors?
All 71V124SA15YG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V124SA15YG8 meets industry standards.
7.What is the process for return or replacement of 71V124SA15YG8?
All 71V124SA15YG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V124SA15YG8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V124SA15YG8 part is unused and in its original packaging.
Return procedure for 71V124SA15YG8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V124SA15YG8 Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
