Renesas 71V2546S100BG8
- Part No.:
- 71V2546S100BG8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V2546S100BG8.pdf
- Description:
- IC SRAM 4.5MBIT PAR 119PBGA
- Quantity:
- Payment:

- Shipping:

Inventory:1,580
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Product details
Overview
71V2546S100BG8 from IDT (now Renesas) is a 128K × 36-bit, 4.5 Mbit synchronous ZBT™ SRAM with pipelined outputs, 3.3V core supply, 2.5V I/O, and 100 MHz operation (10 ns clock-to-data access). It implements zero bus turnaround for dead-cycle-free read/write transitions and supports 4-word linear or interleaved burst mode via internal counter. Used in high-speed packet buffering and network switch fabric control planes.
For engineers reviewing the 71V2546S100BG8 datasheet, 71V2546S100BG8 pinout, 71V2546S100BG8 application, or 71V2546S100BG8 equivalent, key selection criteria include ZBT timing compliance, TQFP-100 package compatibility, 2.5V I/O voltage tolerance, industrial temperature support (–40°C to +85°C), and burst counter control via ADV/LD and LBO pins.
Technical Context
This SRAM uses fully synchronous, positive-edge-triggered registers for address, data, and control signals, enabling full pipelining with two-cycle latency from address/control registration to data output. The on-chip burst counter advances on rising CLK when ADV/LD = HIGH, supporting both linear and interleaved sequences selected by LBO.
ZBT architecture eliminates bus turnaround delay by allowing immediate read-after-write or write-after-read transitions without wait states. Output enable (OE) is asynchronous but internally synchronized, and chip enable logic (CE1/CE2/CE2) permits depth expansion while ensuring pending transfers complete before tri-state.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.5 Mbit); enables 36-bit wide data paths for telecom and networking ASIC interfaces. |
| Max Clock Frequency | 100 MHz (10 ns cycle time); supports system-level timing closure in 10 ns–20 ns pipeline stages. |
| Access Time | 10 ns clock-to-data (tCD); guarantees deterministic read latency for real-time buffer management. |
| I/O Voltage | 2.5V VDDQ supply; compatible with 2.5V logic families and reduces switching noise vs. 3.3V I/O. |
| Core Supply | 3.3V ±5% VDD; matches standard PCI/PCI-X and legacy telecom power rails. |
| Operating Temperature | –40°C to +85°C; qualified for industrial-grade embedded systems and base station equipment. |
| Burst Mode | 4-word linear/interleaved burst; reduces address bus traffic and improves throughput in sequential access patterns. |
Pinout & Package
Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pin 64 supports ZZ (sleep mode) on latest die revision.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CLK | Clock input | Positive-edge-triggered master clock; all synchronous registers sample on rising edge. |
| R/W | Read/Write control | Single bidirectional control pin; determines data direction for current cycle (read or write). |
| ADV/LD | Address valid/load | Loads external address when LOW; increments internal burst counter when HIGH. |
| LBO | Linear/interleaved burst select | Drives VSS for linear burst, VDD for interleaved; configures burst sequence order. |
| CE1, CE2, CE2 | Chip enable inputs | Three independent enables; device selected only when CE1=L, CE2=L, CE2=H. |
| BW1–BW4 | Byte write enables | Individual 9-bit byte controls (BW1→I/O[8:0], BW2→I/O[17:9], etc.); allows partial writes without read-modify-write. |
| I/O[0:31], I/OP[1:4] | Data I/O bus | 36-bit bidirectional data path (32 data + 4 parity); supports synchronous burst reads/writes. |
| VDD, VDDQ, VSS | Power terminals | VDD = 3.3V core; VDDQ = 2.5V I/O; VSS = ground; multiple pins per supply improve decoupling and reduce IR drop. |
Key Features
| Feature | Design Value |
|---|---|
| ZBTTM Zero Bus Turnaround | Eliminates dead cycles between read/write transitions-enables continuous 100 MHz burst streaming without gaps. |
| Internally synchronized OE | Removes external OE timing constraints; outputs disable cleanly on any clock edge without metastability risk. |
| 4-word burst counter | Reduces address bus activity by 75% for sequential accesses; supports both linear and interleaved addressing modes. |
| Individual byte write control | Enables precise 9-bit byte masking (BW1–BW4); avoids full-word read-modify-write overhead in protocol processing. |
| Clock Enable (CEN) | Suspends all internal register updates while preserving state-supports low-power idle without reinitialization. |
Applications
| Network Packet Buffering | Telecom Switch Fabric Control |
|---|---|
|
Use Scenario: Storing ingress/egress packet headers and metadata in Layer 2/3 switches. IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM acting as descriptor cache and header buffer with deterministic 10 ns access. Use Value: ZBT architecture enables back-to-back read/write of packet descriptors without bus stall, increasing switch throughput by >15% vs. standard SSRAM. |
Use Scenario: Holding routing table entries and forwarding decision caches in carrier-grade routers. IC Role / Device Role / Timing Role: Synchronous burst-access memory interfacing directly with MIPS or PowerPC control-plane processors. Use Value: 4-word burst mode cuts address bus cycles by 75%, reducing control-plane latency and easing PCB routing congestion. |
| Baseband Processor Data Cache | Industrial PLC Real-Time FIFO |
|
Use Scenario: Serving as shared instruction/data scratchpad between dual-core DSPs in wireless baseband units. IC Role / Device Role / Timing Role: Pipelined ZBT SRAM providing concurrent read/write access to two processor clusters via time-multiplexed bus. Use Value: 2.5V I/O reduces signal integrity issues at 100 MHz on dense multilayer boards, improving timing margin by 1.2 ns. |
Use Scenario: Implementing deterministic-length FIFOs for motion control I/O in programmable logic controllers. IC Role / Device Role / Timing Role: Industrial-temperature SRAM used as dual-port buffer between fieldbus interface and real-time CPU. Use Value: –40°C to +85°C rating ensures reliable operation in uncontrolled cabinet environments without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1315KV18-100BZI | 128K × 18-bit organization; 1.8V I/O; no ZBT architecture-requires external turnaround control. | Requires wider data bus (×2 devices) for 36-bit width; lacks burst counter and linear/interleaved mode. | Choose when lower I/O voltage and smaller footprint outweigh ZBT timing benefits and 36-bit native width. |
| AS7C3256A-10JCN | Asynchronous SRAM; 32K × 8-bit; no clock, no burst, no pipelining; 10 ns access but no synchronization. | Cannot replace in pipelined or burst-driven designs; limited to simple address/data latch-based systems. | Only suitable for non-synchronous legacy control logic where clock domain isolation is not required. |
Compared with CY7C1315KV18-100BZI and AS7C3256A-10JCN, the 71V2546S100BG8 uniquely delivers native 36-bit width, ZBT dead-cycle elimination, and integrated burst sequencing-making it irreplaceable in high-throughput telecom buffering where deterministic latency and bus efficiency are critical.
Availability
71V2546S100BG8 is available at Aetrix Electronics and suitable for network packet buffering, telecom switch fabric control, baseband processor caching, industrial PLC FIFOs, and high-reliability embedded instrumentation requiring stable component supply across extended temperature ranges.
Supply support for 71V2546S100BG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology), now part of Renesas Electronics, specializes in high-performance timing, memory, and interface ICs for communications, computing, and industrial markets.
The 71V2546S100BG8 belongs to IDT's ZBT SRAM product line, engineered specifically for zero-latency bus turnaround in packet-switched network infrastructure and real-time control systems demanding deterministic memory access.
FAQ
What is the maximum operating frequency of the 71V2546S100BG8?
The 71V2546S100BG8 is rated for 100 MHz operation (10 ns clock cycle), delivering guaranteed 10 ns clock-to-data access time under commercial and industrial temperature conditions with 3.3V ±5% VDD and 2.5V VDDQ. This frequency is validated across the full –40°C to +85°C range and supports sustained burst-mode operation without derating.
Does the 71V2546S100BG8 support true ZBTTM (Zero Bus Turnaround) behavior?
Yes, the 71V2546S100BG8 implements genuine ZBTTM functionality: it eliminates dead cycles between consecutive read and write operations by overlapping bus direction changes with data transfer. This is achieved through internal timing control and does not require external OE or turnaround logic-verified in the synchronous truth table and functional timing diagrams.
What package type and pin count does the 71V2546S100BG8 use?
The 71V2546S100BG8 is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP) with 14 mm × 20 mm body size and 0.5 mm lead pitch. Pin 64 supports ZZ (sleep mode) on the latest die revision, and pins 14, 16, and 66 tolerate VIH ≥ VDD without direct VDD connection.
How does burst mode work on the 71V2546S100BG8, and how is it configured?
Burst mode on the 71V2546S100BG8 delivers four consecutive data words per address using an internal counter. Sequence order (linear or interleaved) is selected by the LBO pin: tied to VSS for linear, VDD for interleaved. ADV/LD controls counter behavior-LOW loads external address, HIGH increments counter-and is sampled synchronously on CLK rise.
What are the supported temperature ranges for the 71V2546S100BG8?
The 71V2546S100BG8 is qualified for industrial temperature operation from –40°C to +85°C, verified across all electrical parameters including AC timing, DC leakage, and I/O drive strength. This rating applies to the full 100 MHz speed grade and supports deployment in base stations, industrial automation, and outdoor networking equipment.
71V2546S100BG8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 100 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V2546S100BG8 FAQ
1.How can I place an order for 71V2546S100BG8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V2546S100BG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V2546S100BG8 reliable?
The price and inventory of 71V2546S100BG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V2546S100BG8 is usually 5 days.
3.What payment methods are accepted for 71V2546S100BG8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V2546S100BG8 transactions.
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4.How is shipping managed for 71V2546S100BG8?
71V2546S100BG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V2546S100BG8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V2546S100BG8?
For technical support, including 71V2546S100BG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V2546S100BG8 requirements.
6.How does Aetrix verify that 71V2546S100BG8 is sourced from the original manufacturer or authorized distributors?
All 71V2546S100BG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V2546S100BG8 meets industry standards.
7.What is the process for return or replacement of 71V2546S100BG8?
All 71V2546S100BG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V2546S100BG8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V2546S100BG8 part is unused and in its original packaging.
Return procedure for 71V2546S100BG8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V2546S100BG8 Tags

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M24C02-WMN6TP
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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M24C02-FMC6TG
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AT24CS02-SSHM-T
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93LC46BT-I/OT
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AT24C04C-SSHM-T
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24LC01BT-I/SN
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24AA02UIDT-I/OT
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AT24C08C-STUM-T
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