Renesas 71V2546S100BGI8

Overview

71V2546S100BGI8 from IDT is a 128K × 36-bit (4.5 Mbit), 3.3V synchronous ZBT™ SRAM with 2.5V I/O, pipelined outputs, and zero bus turnaround-enabling 150 MHz operation with 3.8 ns clock-to-data access. It features a 4-word burst counter (linear/interleaved), individual byte write control (BW1–BW4), and three chip enables for depth expansion. Used in high-speed networking line cards and packet buffering subsystems where deterministic latency and bus efficiency are critical.

For engineers reviewing the 71V2546S100BGI8 datasheet, 71V2546S100BGI8 pinout, 71V2546S100BGI8 application, or 71V2546S100BGI8 equivalent, key selection criteria include ZBT™ architecture compatibility, TQFP-100 package footprint, industrial temperature support (–40°C to +85°C), and 2.5V I/O voltage domain alignment with contemporary FPGA or ASIC interfaces.

Technical Context

This device implements a fully synchronous, pipelined SRAM architecture with positive-edge-triggered registers for address, data, and control signals. Its ZBT™ mode eliminates dead cycles between read/write transitions by internally synchronizing output enable and using ADV/LD to manage burst counter incrementing versus external address loading.

The on-chip 4-word burst counter supports both linear and interleaved sequences selected via LBO, while individual byte write enables (BW1–BW4) allow granular 8-bit writes without masking logic. Clock Enable (CEN) provides cycle-level suspension, and tri-state outputs settle two cycles after chip deselect or write initiation.

Key Specifications

Pinout & Package

Packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), the 71V2546S100BGI8 uses a 14 mm × 20 mm body with 0.5 mm lead pitch. Pin 1 is located at top-left corner (A1) when marking side faces up; pins 14, 16, and 66 require ≥ VIH input but need not be tied directly to VDD.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1355BV18-167BZI and AS7C33128PFSIG, the 71V2546S100BGI8 delivers superior bus efficiency via ZBT™ and deterministic 3.8 ns latency, making it optimal for data-path buffering where timing predictability and throughput density matter most.

Availability

71V2546S100BGI8 is available at Aetrix Electronics and suitable for network packet buffering, FPGA-based protocol acceleration, and industrial PLC data logging requiring stable component supply, long-term lifecycle assurance, and industrial-grade thermal performance.

Supply support for 71V2546S100BGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a semiconductor leader specializing in timing, memory interface, and RF power solutions for communications and computing infrastructure.

The 71V2546S100BGI8 belongs to IDT's ZBT™ SRAM product line-designed specifically for high-speed, low-latency data buffering in networking, telecom, and real-time embedded systems demanding zero bus turnaround and deterministic timing.

FAQ

What is the maximum operating frequency of the 71V2546S100BGI8?

The 71V2546S100BGI8 supports a maximum clock frequency of 150 MHz, corresponding to a 6.67 ns clock period. This rating is guaranteed across the full industrial temperature range (–40°C to +85°C) and 3.3V ±5% supply, with 3.8 ns clock-to-data access time measured under those conditions. The 71V2546S100BGI8 achieves this performance using its pipelined ZBT™ architecture and optimized CMOS process.

Does the 71V2546S100BGI8 support burst read and write operations?

Yes, the 71V2546S100BGI8 includes an on-chip 4-word burst counter that supports both linear and interleaved burst sequences. Burst mode is enabled via the ADV/LD pin: LOW loads an external address, HIGH increments the internal counter. The LBO pin selects between linear (LBO = VSS) and interleaved (LBO = VDD) order. Each burst delivers four consecutive data words with a single address setup, reducing bus overhead in sequential access scenarios.

What is the function of the CEN pin on the 71V2546S100BGI8?

The CEN (Clock Enable) pin on the 71V2546S100BGI8 suspends all synchronous operation when driven high at the rising edge of CLK. During suspension, internal registers retain their state, outputs remain unchanged, and no new memory cycles are initiated. This feature allows precise cycle-level gating of memory activity-useful for power management, debug synchronization, or coordinating with external state machines without resetting the device.

How does the ZBT™ architecture of the 71V2546S100BGI8 eliminate dead cycles?

The ZBT™ (Zero Bus Turnaround) architecture in the 71V2546S100BGI8 eliminates dead cycles by internally synchronizing output enable and using pipelined registers to decouple address/control sampling from data transfer timing. When transitioning between read and write operations-or vice versa-the 71V2546S100BGI8 completes the current cycle and begins the next without inserting idle bus cycles, enabling back-to-back transactions at full 150 MHz throughput.

What package type and pin count does the 71V2546S100BGI8 use?

The 71V2546S100BGI8 is packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP) with 14 mm × 20 mm body dimensions and 0.5 mm lead pitch. This package is distinct from the BGA variant (BG119) and is explicitly designated by the "BGI8" suffix. The TQFP-100 footprint supports standard reflow assembly and offers accessible signal routing for high-speed DDR-style layouts.