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Renesas 71V2546S133BG8
- Part No.:
- 71V2546S133BG8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V2546S133BG8.pdf
- Description:
- IC SRAM 4.5MBIT PAR 119PBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,125
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Product details
Overview
71V2546S133BG8 from IDT (now Renesas) is a 128K × 36-bit, 4.5 Mbit synchronous ZBT™ SRAM with pipelined outputs, 133 MHz operation (7.5 ns clock-to-data access), 3.3 V core supply and 2.5 V I/O supply, packaged in a 119-ball BGA. It enables zero-bus-turnaround burst transfers in high-speed networking and packet buffering applications.
For engineers reviewing the 71V2546S133BG8 datasheet, 71V2546S133BG8 pinout, 71V2546S133BG8 application, or 71V2546S133BG8 equivalent, key selection criteria include ZBT™ architecture support for dead-cycle-free read/write transitions, 4-word linear/interleaved burst capability, individual byte write control (BW1–BW4), and industrial temperature range (–40°C to +85°C) compliance.
Technical Context
The 71V2546S133BG8 implements a fully synchronous, clock-edge-triggered interface with address, data, and control registers aligned to the rising edge of CLK. Its internal burst counter-controlled by ADV/LD and LBO-generates sequential addresses for 4-word bursts without external logic.
ZBT™ operation eliminates bus turnaround latency: a write cycle immediately followed by a read (or vice versa) proceeds without idle cycles. Output enable (OE) is asynchronous but internally synchronized, and Clock Enable (CEN) suspends all register updates while preserving state.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36 bits = 4.5 Mbit total capacity; supports 36-bit wide data paths in high-bandwidth systems. |
| Max Clock Frequency | 133 MHz (tCYC = 7.5 ns); enables sustained 532 MB/s peak throughput in burst mode. |
| Access Time | 7.5 ns clock-to-data (tCD); defines minimum latency from CLK edge to valid output data under full-speed operation. |
| VDD / VDDQ | 3.3 V ±5% core supply; 2.5 V ±10% I/O supply - separates noise-sensitive core logic from high-slew I/O drivers. |
| Operating Temperature | –40°C to +85°C; qualified for industrial-grade embedded systems including telecom line cards and baseband processing units. |
| Burst Mode | 4-word linear or interleaved burst (selected by LBO pin); reduces address bus overhead and simplifies controller design. |
| Byte Write Control | Four independent BW1–BW4 signals; allows selective 8-bit writes within 36-bit word without read-modify-write cycles. |
Pinout & Package
Packaged in a JEDEC-standard 119-ball grid array (BG119), 12 × 12 mm body, 0.8 mm pitch, RoHS-compliant green package. Pinout validated per IDT document 5294 drw 13a (Aug. 12, 2020).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address Inputs | 17-bit address bus supporting full 128K depth; sampled on rising CLK edge with setup/hold timing. |
| CLK | System Clock Input | Rising-edge-triggered master clock; synchronizes all address, control, and data transfers. |
| R/W | Read/Write Control | Single-pin command: HIGH = read, LOW = write; determines burst cycle direction at first address load. |
| ADV/LD | Address Load/Burst Counter Advance | LOW loads external address; HIGH increments internal burst counter - enables seamless burst sequencing. |
| LBO | Burst Order Select | Connect to VSS for linear burst (0,1,2,3); to VDD for interleaved burst (0,2,1,3) - no external logic required. |
| BW1–BW4 | Byte Write Enables | Active-LOW per-byte write masks; each controls one 8-bit lane of the 36-bit I/O bus (BW4 covers I/O[24:31] + I/OP[1:4]). |
| CE1, CE2, CE2 | Chip Enables | Three independent enables; device selected only when CE1=L, CE2=L, CE2=H - supports depth expansion without glue logic. |
| I/O[0:31], I/OP[1:4] | Data I/O Bus | 36-bit bidirectional data path; I/OP pins are parity bits used in error-checking configurations. |
| VDD, VDDQ, VSS | Power & Ground | VDD (3.3 V) powers core logic; VDDQ (2.5 V) powers I/O buffers; separate supplies reduce switching noise coupling. |
| ZZ (Pin T7) | Deep Sleep Mode | Active-LOW input; places device in low-power standby (IDD < 10 µA) - supported on latest die revision. |
Key Features
| Feature | Design Value |
|---|---|
| ZBTTM Architecture | Eliminates dead cycles between read and write operations - enables continuous 133 MHz burst streaming in packet FIFOs. |
| Internally Synchronized OE | Removes need for precise OE timing control; outputs tri-state cleanly two cycles after OE deassertion. |
| Pipelined Output Registers | Output data registered on CLK edge - ensures deterministic timing and simplifies PCB layout for high-speed interfaces. |
| On-Chip Burst Counter | Generates four sequential addresses from single load - reduces controller address generation logic and bus bandwidth demand. |
| Three Independent Chip Enables | Enables seamless depth expansion across multiple devices without external decoding logic or address aliasing. |
Applications
| Packet Buffering in Switch ASICs | High-Speed Data Acquisition Systems |
|---|---|
Use Scenario: Storing ingress/egress Ethernet or SONET frames in multi-gigabit switch fabric line cards. IC Role / Device Role / Timing Role: Dual-port-like FIFO buffer using ZBT™ zero-turnaround mode to sustain back-to-back read/write at 133 MHz. Use Value: Eliminates bus idle cycles during frame header parsing and payload forwarding - increases effective throughput by ≥15% vs. standard SSRAM. | Use Scenario: Capturing real-time sensor streams (e.g., radar ADC samples) at >500 MB/s aggregate rate. IC Role / Device Role / Timing Role: High-bandwidth circular buffer with 4-word burst reads aligned to DMA engine transfer size. Use Value: Pipelined outputs and 7.5 ns tCD ensure deterministic sampling window alignment - reduces jitter-induced data loss. |
| Baseband Processing in Wireless Infrastructure | Industrial PLC Motion Control Buffers |
Use Scenario: Temporary storage of OFDM symbol data between FFT and channel estimation blocks in LTE/5G baseband units. IC Role / Device Role / Timing Role: Low-latency scratchpad memory with byte-write granularity for coefficient updates during symbol processing. Use Value: Independent BW1–BW4 enables partial word writes without read-modify-write - cuts update latency by 2× vs. discrete latch solutions. | Use Scenario: Real-time motion profile buffering for multi-axis servo drives requiring deterministic 100 µs loop timing. IC Role / Device Role / Timing Role: Deterministic-access buffer with industrial temp rating and ZZ sleep mode for power-constrained enclosures. Use Value: –40°C to +85°C operation and <10 µA ZZ current ensure reliability in uncooled control cabinets - avoids thermal derating penalties. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1355BV18-133BZI | 128K × 36, 133 MHz, 1.8 V I/O (vs. 2.5 V), QDR-II+ architecture with dual-clock read/write ports. | Requires separate read/write clocks and different controller logic; not ZBT™-compatible. | Select only if migrating to QDR-II+ ecosystem and redesigning controller interface. |
| AS7C31025B-133BIN | 128K × 32 (not 36-bit), 133 MHz, 3.3 V only (no VDDQ separation), TQFP-100 package only - no BGA option. | Lacks I/OP[1:4] parity pins and byte-write flexibility; incompatible pinout and data width. | Consider only for cost-sensitive, non-parity, TQFP-based designs where 4-bit width reduction is acceptable. |
Compared with CY7C1355BV18-133BZI and AS7C31025B-133BIN, the 71V2546S133BG8 uniquely delivers ZBT™ zero-turnaround operation with 36-bit width, 2.5 V I/O, and industrial BGA packaging - making it irreplaceable in legacy high-speed packet buffer designs requiring minimal controller changes.
Availability
71V2546S133BG8 is available at Aetrix Electronics and suitable for packet buffering, baseband processing, high-speed data acquisition, and industrial motion control applications requiring stable component supply across extended product lifecycles.
Supply support for 71V2546S133BG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory, and interface solutions for communications and computing infrastructure.
The 71V2546S133BG8 belongs to IDT's ZBT™ SRAM product line, engineered specifically for zero-latency bus turnaround in high-throughput packet-switching and real-time signal processing systems.
FAQ
What is the maximum operating frequency of the 71V2546S133BG8?
The 71V2546S133BG8 is rated for 133 MHz operation (tCYC = 7.5 ns) across its commercial and industrial temperature ranges. This frequency is guaranteed under specified VDD = 3.3 V ±5%, VDDQ = 2.5 V ±10%, and load conditions per AC Electrical Characteristics table in the official datasheet. Performance beyond 133 MHz is not characterized or supported.
Does the 71V2546S133BG8 support both linear and interleaved burst modes?
Yes, the 71V2546S133BG8 supports both linear and interleaved 4-word burst sequences. The LBO (Linear/Interleaved Burst Order) pin selects the mode: tied to VSS for linear (0,1,2,3), or to VDD for interleaved (0,2,1,3). This selection is sampled at the rising edge of CLK and remains active until changed.
What is the function of the ZZ pin on the 71V2546S133BG8?
The ZZ pin (Pin T7) on the 71V2546S133BG8 enables deep power-down mode. When driven LOW, the device enters sleep state with IDD reduced to <10 µA. This feature is supported on the latest die revision and requires no additional sequencing - VDD and VDDQ supplies remain active.
How many chip enable signals does the 71V2546S133BG8 have, and how do they operate?
The 71V2546S133BG8 has three chip enable inputs: CE1, CE2, and CE2. The device is selected only when CE1 = LOW, CE2 = LOW, and CE2 = HIGH. Any deviation (e.g., CE2 = LOW) deselects the device. Pending transfers complete before outputs tri-state two cycles after deselect initiation.
Is the 71V2546S133BG8 pin-compatible with other members of the 71V2546 family?
Yes, the 71V2546S133BG8 shares identical pinout and functionality with other 71V2546 variants in the BG119 package (e.g., 71V2546S150BG8, 71V2546S166BG8). Speed grade differences affect timing parameters only - no PCB or firmware changes are needed when upgrading within the same package.
71V2546S133BG8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 133 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 4.2 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V2546S133BG8 FAQ
1.How can I place an order for 71V2546S133BG8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V2546S133BG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V2546S133BG8 reliable?
The price and inventory of 71V2546S133BG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V2546S133BG8 is usually 5 days.
3.What payment methods are accepted for 71V2546S133BG8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V2546S133BG8 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V2546S133BG8?
71V2546S133BG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V2546S133BG8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V2546S133BG8?
For technical support, including 71V2546S133BG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V2546S133BG8 requirements.
6.How does Aetrix verify that 71V2546S133BG8 is sourced from the original manufacturer or authorized distributors?
All 71V2546S133BG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V2546S133BG8 meets industry standards.
7.What is the process for return or replacement of 71V2546S133BG8?
All 71V2546S133BG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V2546S133BG8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V2546S133BG8 part is unused and in its original packaging.
Return procedure for 71V2546S133BG8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V2546S133BG8 Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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24LC01BT-I/OT
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M24C02-FMC6TG
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AT24CS02-SSHM-T
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93LC46BT-I/OT
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AT24C04C-SSHM-T
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24LC01BT-I/SN
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24AA02UIDT-I/OT
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AT24C08C-STUM-T
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