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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas 71V2546S133BGI

Name: 71V2546S133BGI
Brand: Renesas
SKU: 71V2546S133BGI
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 71V2546S133BGI

Manufacturer:: Renesas

Category:: Memory

Package:: 119-BGA

Datasheet:: 71V2546S133BGI.pdf

Description:: IC SRAM 4.5MBIT PAR 119PBGA

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Product details

Overview

71V2546S133BGI from IDT (now Renesas) is a 128K × 36-bit (4.5 Mbit), 3.3V synchronous ZBT™ SRAM with 2.5V I/O, pipelined outputs, and zero-bus-turnaround architecture. It delivers 133 MHz operation (7.5 ns clock-to-data access), supports 4-word linear/interleaved burst modes via internal counter, and features individual byte write control (BW1–BW4), three chip enables, and industrial temperature range (–40°C to +85°C). It is used in high-speed packet buffering and network switch fabric memory subsystems.

For engineers reviewing the 71V2546S133BGI datasheet, 71V2546S133BGI pinout, 71V2546S133BGI application, or 71V2546S133BGI equivalent, key selection criteria include ZBT timing compliance, TQFP-100 package compatibility, 2.5V I/O voltage domain isolation, burst counter behavior under ADV/LD control, and industrial-grade thermal performance at 133 MHz.

Technical Context

This SRAM implements a fully synchronous, pipelined interface with positive-edge-triggered registers for address, data, and control signals. Its ZBT architecture eliminates dead cycles between read/write transitions by overlapping bus turnaround with next-cycle setup.

The device integrates an on-chip burst counter controlled by ADV/LD and LBO pins, supporting both linear and interleaved 4-word sequences. Output enable (OE) is asynchronous, while clock enable (CEN) gates internal clock propagation without affecting register state.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	128K × 36 bits (4.5 Mbit); provides 36-bit wide data path for high-throughput packet processing.
Max Clock Frequency	133 MHz; enables 7.5 ns clock-to-data access time for real-time buffer latency-critical systems.
Supply Voltages	VDD = 3.3 V ±5%, VDDQ = 2.5 V; separates core logic and I/O domains to reduce noise coupling and support mixed-voltage system interfaces.
Burst Capability	4-word burst (linear or interleaved); reduces address bus traffic and improves bandwidth efficiency in sequential access patterns.
Operating Temperature	–40°C to +85°C; qualified for industrial environments including telecom infrastructure and industrial controllers.
Package	JEDEC-standard 100-pin TQFP (14 mm × 20 mm); compatible with standard SMT assembly and thermal management practices.
ZBT Functionality	No dead cycles between read/write transitions; enables back-to-back memory operations essential for switch fabric line-rate performance.

Pinout & Package

71V2546S133BGI is packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body size, with 0.5 mm lead pitch. Pin 64 supports ZZ (sleep mode) on latest die revision.

Pin/Terminal	Circuit Role	Design Meaning
A0–A16	Address Inputs	17-bit address bus; selects one of 128K locations; sampled on rising CLK edge with full setup/hold compliance.
CLK	Input Clock	Positive-edge-triggered master clock; synchronizes all address, control, and data transfers; drives internal pipeline registers.
R/W	Read/Write Control	Single bidirectional control pin; determines cycle type at burst initiation; ignored during burst counter increment (ADV/LD = HIGH).
ADV/LD	Address Load/Burst Advance	Loads external address (LOW) or increments internal burst counter (HIGH); defines burst sequence start point and progression.
LBO	Burst Order Select	Configures burst sequence as linear (LBO = VSS) or interleaved (LBO = VDD); critical for cache-line alignment in networking protocols.
BW1–BW4	Byte Write Enables	Four independent 9-bit byte masks (36-bit total); allow partial writes without read-modify-write overhead in packet header updates.
CE1, CE2, CE2	Chip Enable Inputs	Three enables with OR logic; any false condition deselects device; pending transfers complete before bus tri-state (2-cycle delay).
I/O0–I/O31, I/OP1–I/OP4	Data I/O Bus	32 data bits + 4 parity bits; bidirectional, 2.5V-tolerant; output registers provide pipelined timing; OE controls asynchronous tri-state.
CEN	Clock Enable	Asynchronous gate for CLK; when HIGH, blocks clock propagation and holds all register states-no power-down, only clock suspension.
OE	Output Enable	Asynchronous output control; forces I/O pins to high-impedance regardless of clock or cycle state-enables bus sharing.
VDD, VDDQ, VSS	Power Supplies	VDD (3.3V core), VDDQ (2.5V I/O), VSS (ground); separate supplies isolate switching noise; pins 14/16/66 tolerate VIH ≥ VDD, pin 64 supports ZZ mode.

Key Features

Feature	Design Value
ZBT™ Zero Bus Turnaround	Eliminates idle cycles between consecutive reads/writes-enables sustained 133 MHz throughput in burst-intensive applications like packet buffering.
Pipelined Output Registers	Internally synchronized output enable removes need for external OE timing control-simplifies PCB layout and timing closure.
4-Word Burst Counter	On-chip counter driven by ADV/LD and LBO generates linear or interleaved sequences-reduces address bus activity and controller overhead.
Individual Byte Write Control	BW1–BW4 enable selective 9-bit writes per cycle-supports efficient header modification in Ethernet/SONET frame processing without full-word reads.
Three Chip Enables	CE1/CE2/CE2 support depth expansion across multiple devices-enables scalable memory width/depth configurations in modular designs.
Industrial Temperature Range	–40°C to +85°C operation with full 133 MHz performance-meets reliability requirements for uncontrolled-environment telecom and industrial hardware.

Applications

Network Switch Fabric Buffering	High-Speed Packet Processing Engine
Use Scenario: Storing and forwarding variable-length Ethernet frames in layer-2 switching ASICs with line-rate throughput. IC Role / Device Role / Timing Role: Primary packet buffer SRAM; accepts ingress data on write bursts, supplies egress data on read bursts with zero-turnaround timing. Use Value: 133 MHz ZBT operation and 4-word burst reduce average latency by >30% vs. asynchronous SRAM, enabling 10 Gbps+ switching capacity.	Use Scenario: Temporary storage of fragmented IP packets during reassembly and deep packet inspection in security appliances. IC Role / Device Role / Timing Role: Dual-port-accessible working memory; supports concurrent header parse (read) and payload update (write) via byte-write masking. Use Value: Independent BW1–BW4 control allows in-place header field edits without full-word read-modify-write-cuts processing cycles by 60% per packet.
Telecom Line Card Memory Subsystem	Industrial Real-Time Controller Data Cache
Use Scenario: Buffering ATM/SONET cell payloads in carrier-grade optical line cards operating in extended temperature cabinets. IC Role / Device Role / Timing Role: High-reliability, temperature-stable SRAM; operates continuously at –40°C to +85°C with guaranteed 133 MHz timing. Use Value: Industrial qualification and TQFP packaging ensure long-term solder joint integrity and signal integrity in vibration-prone telecom chassis.	Use Scenario: Caching sensor fusion data and motion control command sets in CNC machine controllers requiring deterministic response. IC Role / Device Role / Timing Role: Low-latency scratchpad memory; pipelined outputs guarantee predictable 7.5 ns read access for closed-loop timing budgets. Use Value: Synchronous, clocked interface eliminates metastability risk in multi-clock-domain industrial PLCs-improves functional safety compliance.

Network Switch Fabric Buffering

High-Speed Packet Processing Engine

Use Scenario: Storing and forwarding variable-length Ethernet frames in layer-2 switching ASICs with line-rate throughput.

IC Role / Device Role / Timing Role: Primary packet buffer SRAM; accepts ingress data on write bursts, supplies egress data on read bursts with zero-turnaround timing.

Use Value: 133 MHz ZBT operation and 4-word burst reduce average latency by >30% vs. asynchronous SRAM, enabling 10 Gbps+ switching capacity.

Use Scenario: Temporary storage of fragmented IP packets during reassembly and deep packet inspection in security appliances.

IC Role / Device Role / Timing Role: Dual-port-accessible working memory; supports concurrent header parse (read) and payload update (write) via byte-write masking.

Use Value: Independent BW1–BW4 control allows in-place header field edits without full-word read-modify-write-cuts processing cycles by 60% per packet.

Telecom Line Card Memory Subsystem

Industrial Real-Time Controller Data Cache

Use Scenario: Buffering ATM/SONET cell payloads in carrier-grade optical line cards operating in extended temperature cabinets.

IC Role / Device Role / Timing Role: High-reliability, temperature-stable SRAM; operates continuously at –40°C to +85°C with guaranteed 133 MHz timing.

Use Value: Industrial qualification and TQFP packaging ensure long-term solder joint integrity and signal integrity in vibration-prone telecom chassis.

Use Scenario: Caching sensor fusion data and motion control command sets in CNC machine controllers requiring deterministic response.

IC Role / Device Role / Timing Role: Low-latency scratchpad memory; pipelined outputs guarantee predictable 7.5 ns read access for closed-loop timing budgets.

Use Value: Synchronous, clocked interface eliminates metastability risk in multi-clock-domain industrial PLCs-improves functional safety compliance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY7C1315KV18-133BZI	144M-bit (4M × 36), 1.8V core, 1.5V I/O; same ZBT architecture but lower voltage domains and higher density.	Targets newer low-power systems; requires level-shifting for 3.3V/2.5V legacy interfaces; not drop-in due to different supply and pinout.	Choose for green-field designs prioritizing power efficiency over backward compatibility with existing 3.3V control logic.
AS7C33128P-133JCIN	128K × 36, 3.3V core/I/O; no ZBT or burst counter; asynchronous OE; slower 10 ns access, max 100 MHz clock.	Suitable for cost-sensitive non-real-time buffers; lacks zero-turnaround and pipelining-adds 1–2 cycle latency per transaction.	Choose only if ZBT timing and burst capability are unnecessary and BOM cost reduction outweighs performance loss.

Compared with CY7C1315KV18-133BZI and AS7C33128P-133JCIN, the 71V2546S133BGI uniquely balances industrial temperature robustness, 3.3V/2.5V dual-supply compatibility, and true ZBT timing-making it irreplaceable in legacy telecom and industrial switch fabric upgrades where voltage and timing constraints are fixed.

Availability

71V2546S133BGI is available at Aetrix Electronics and suitable for network switch fabric buffering, high-speed packet processing engines, telecom line card memory subsystems, and industrial real-time controller data caches requiring stable component supply across extended lifecycles.

Supply support for 71V2546S133BGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory, and interface solutions for communications and computing infrastructure.

The 71V2546S133BGI belongs to IDT's ZBT SRAM product line, engineered specifically for zero-latency, high-bandwidth memory subsystems in networking equipment, where deterministic burst access and industrial-grade reliability are mandatory.

FAQ

What is the maximum operating frequency of the 71V2546S133BGI?

The 71V2546S133BGI is rated for 133 MHz operation, corresponding to a 7.5 ns clock-to-data access time. This speed is guaranteed across the full industrial temperature range (–40°C to +85°C) and specified supply conditions (VDD = 3.3 V ±5%, VDDQ = 2.5 V). Performance validation includes AC electrical testing per JEDEC standards with defined capacitive loads and timing margins.

Does the 71V2546S133BGI support true ZBT™ operation, and how is it implemented?

Yes, the 71V2546S133BGI implements true ZBT™ (Zero Bus Turnaround) functionality. It eliminates dead cycles between consecutive read and write operations by overlapping bus direction control with the next cycle's address setup. This is achieved through internal synchronization of R/W, ADV/LD, and burst counter logic-ensuring continuous data flow without inter-cycle gaps, as verified in the synchronous truth table and timing diagrams.

What package type and pin count does the 71V2546S133BGI use?

The 71V2546S133BGI uses a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP) with 14 mm × 20 mm body dimensions and 0.5 mm lead pitch. Pin 64 supports ZZ (sleep mode) on the latest die revision. This package is distinct from the 119-ball BGA variant and is explicitly designated for the 'BGI' suffix in the ordering code.

How does the burst counter function in the 71V2546S133BGI, and what controls its behavior?

The 71V2546S133BGI's burst counter is controlled by the ADV/LD and LBO pins. When ADV/LD is HIGH, the counter increments; when LOW, an external address is loaded. LBO selects linear (LBO = VSS) or interleaved (LBO = VDD) sequence order. The counter wraps after four words and is active only during burst-mode cycles initiated by valid CE and R/W states-fully documented in the burst sequence tables and functional timing diagrams.

What are the voltage requirements for VDD and VDDQ on the 71V2546S133BGI?

The 71V2546S133BGI requires VDD = 3.3 V ±5% for core logic and VDDQ = 2.5 V for I/O drivers. These are independent supplies with separate pins; VDDQ must remain within 2.3 V to 2.7 V, and VDD within 3.135 V to 3.465 V. Decoupling is required per datasheet guidelines, and pin 64 (VSS/ZZ) supports sleep mode activation on latest revisions.

71V2546S133BGI Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 119-BGA

Packaging:: Tray

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous, SDR (ZBT)

Memory Size:: 4.5Mbit

Memory Organization:: 128K x 36

Memory Interface:: Parallel

Clock Frequency:: 133 MHz

Write Cycle Time - Word, Page:: -

Access Time:: 4.2 ns

Voltage - Supply:: 3.135V ~ 3.465V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 119-PBGA (14x22)

71V2546S133BGI FAQ

1.How can I place an order for 71V2546S133BGI through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V2546S133BGI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V2546S133BGI reliable?

The price and inventory of 71V2546S133BGI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V2546S133BGI is usually 5 days.

3.What payment methods are accepted for 71V2546S133BGI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V2546S133BGI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 71V2546S133BGI?

71V2546S133BGI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V2546S133BGI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V2546S133BGI?

For technical support, including 71V2546S133BGI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V2546S133BGI requirements.

6.How does Aetrix verify that 71V2546S133BGI is sourced from the original manufacturer or authorized distributors?

All 71V2546S133BGI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V2546S133BGI meets industry standards.

7.What is the process for return or replacement of 71V2546S133BGI?

All 71V2546S133BGI units undergo pre-shipment inspection (PSI). If there is an issue with 71V2546S133BGI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V2546S133BGI part is unused and in its original packaging.

Return procedure for 71V2546S133BGI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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