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Renesas 71V2546S133PFG

Part No.:
71V2546S133PFG
Manufacturer:
Renesas
Category:
Memory
Package:
100-LQFP
Datasheet:
Aetrix71V2546S133PFG.pdf
Description:
IC SRAM 4.5MBIT PARALLEL 100TQFP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,029

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Product details

Overview

71V2546S133PFG from IDT (now Renesas) is a 128K × 36-bit, 4.5 Mbit synchronous ZBT™ SRAM with pipelined outputs, 133 MHz operation (7.5 ns clock-to-data), 3.3 V core supply, and 2.5 V I/O supply. It supports zero-bus-turnaround for dead-cycle-free read/write transitions and is used in high-speed networking packet buffers and telecom line-card data path memory.

For engineers reviewing the 71V2546S133PFG datasheet, 71V2546S133PFG pinout, 71V2546S133PFG application, or 71V2546S133PFG equivalent, key selection criteria include burst mode support (linear/interleaved), individual byte write control (BW1–BW4), triple chip enable architecture for depth expansion, and industrial temperature range (–40°C to +85°C) compliance.

Technical Context

This SRAM implements a fully synchronous, clock-edge-triggered interface with address, data, and control registers aligned to the rising edge of CLK. Its ZBT™ architecture eliminates bus turnaround latency by overlapping address setup and data transfer across consecutive cycles.

The device integrates an on-chip 4-word burst counter controlled by ADV/LD and LBO, enabling linear or interleaved burst sequences without external logic. Output enable (OE) is internally synchronized, removing timing constraints on OE assertion/deassertion.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization 128K × 36 bits (4.5 Mbit); enables 36-bit wide data paths for parallel bus architectures.
Max Clock Frequency 133 MHz (tCYC = 7.5 ns); supports system-level timing closure in high-throughput packet processing.
Access Time 7.5 ns clock-to-data (tCD); defines minimum cycle time for consecutive read operations.
Supply Voltages VDD = 3.3 V ±5% (core), VDDQ = 2.5 V ±10% (I/O); decoupled supplies reduce noise coupling between logic and data I/O.
Operating Temperature –40°C to +85°C (industrial grade); qualified for deployment in base station and industrial control environments.
Burst Capability 4-word burst (linear or interleaved via LBO); reduces address bus activity and improves effective bandwidth.
Write Control Individual byte write enable (BW1–BW4); allows partial writes without read-modify-write overhead.

Pinout & Package

Packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, lead pitch 0.5 mm. Pin 64 supports ZZ (sleep mode) on latest die revision.

Pin/Terminal Circuit Role Design Meaning
A0–A16 Address Inputs 17-bit address bus supporting full 128K depth; sampled on rising CLK edge.
CLK System Clock Input Rising-edge-triggered master clock; all synchronous inputs referenced to this edge.
R/W Read/Write Control Single pin defining cycle direction; latched synchronously with CLK.
CE1, CE2, CE2 Chip Enable Inputs Three independent enables; any false condition deselects device; pending transfers complete before tri-state.
BW1–BW4 Byte Write Enables Active-low per-byte controls; each enables one 9-bit byte (I/O[0:8], [9:17], [18:26], [27:35]) during write.
ADV/LD Address Valid/Load Control Low = load external address; High = increment internal burst counter; determines burst sequence start point.
LBO Burst Order Select Low = linear burst (0,1,2,3); High = interleaved burst (0,2,1,3); sets addressing pattern for 4-word burst.
I/O[0:31], I/OP[1:4] Data I/O Bus 36-bit bidirectional data path (32 data + 4 parity); VDDQ-referenced, 2.5 V compatible.
OE Output Enable Asynchronous but internally synchronized; disables outputs without affecting internal state or timing.
CEN Clock Enable High = blocks CLK propagation; preserves register contents and halts all synchronous operation.

Key Features

Feature Design Value
ZBT™ Zero Bus Turnaround Eliminates dead cycles between read and write operations, enabling back-to-back access at full clock rate.
Internally Synchronized OE Removes setup/hold timing constraints on OE, simplifying system-level timing closure and reducing PCB routing complexity.
4-Word Burst Counter Reduces address bus toggling and controller overhead; supports both linear and interleaved sequences via LBO pin.
Triple Chip Enable Architecture Enables seamless depth expansion across multiple devices without external decode logic or glue logic.
Individual Byte Write Control Allows selective 9-bit byte updates without read-modify-write, critical for protocol header manipulation in packet buffers.

Applications

Packet Buffer Memory Telecom Line Card Data Path

Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in switch fabric ASIC interfaces.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency dual-port buffer providing concurrent read/write access to packet headers and payloads.

Use Value: ZBT™ architecture enables sustained 133 MHz throughput with no bus turnaround penalty, matching ASIC DMA burst requirements.

Use Scenario: Frame buffering in SONET/SDH OC-48 line cards requiring deterministic latency and burst-mode efficiency.

IC Role / Device Role / Timing Role: Synchronous SRAM acting as elastic store between framer and crossbar switch, absorbing jitter and rate mismatches.

Use Value: 4-word burst mode and pipelined outputs reduce controller overhead and improve link utilization under traffic bursts.

Network Processor Co-Processor Memory Industrial Real-Time Control Buffer

Use Scenario: Offloading packet classification and lookup table storage from network processors in DPI systems.

IC Role / Device Role / Timing Role: Dedicated high-speed memory bank accessed via dedicated bus interface for parallel rule matching.

Use Value: Individual byte write (BW1–BW4) enables atomic updates to multi-field match entries without corrupting adjacent rules.

Use Scenario: Cyclic data logging and motion control trajectory buffering in PLCs and CNC controllers.

IC Role / Device Role / Timing Role: Deterministic-access scratchpad memory for real-time firmware executing on industrial MCUs.

Use Value: Industrial temperature rating (–40°C to +85°C) and 3.3 V/2.5 V dual-supply design ensure reliability in uncontrolled cabinet environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C1355BV18-133BZI 128K × 36, 133 MHz, 1.8 V I/O (not 2.5 V); uses different burst control (ADSP vs. ADV/LD). Targets newer low-voltage systems; lacks LBO-selectable burst order; requires level-shifting for 2.5 V buses. Choose when migrating to 1.8 V I/O ecosystems and redesigning power delivery; not drop-in compatible.
AS7C3128B-133JCIN 128K × 36, 133 MHz, 3.3 V only (no VDDQ separation); no ZBT™ architecture - standard sync SRAM with OE timing constraints. Suitable for cost-sensitive designs where bus turnaround latency is acceptable; no burst counter or BWx pins. Choose for simpler timing validation and lower BOM cost where ZBT™ and burst features are unnecessary.

Compared with CY7C1355BV18-133BZI and AS7C3128B-133JCIN, the 71V2546S133PFG uniquely delivers ZBT™ zero-turnaround operation, 2.5 V I/O compatibility, and hardware-configurable burst sequencing - essential for legacy telecom and high-performance packet buffer designs.

Availability

71V2546S133PFG is available at Aetrix Electronics and suitable for packet buffering, telecom line card memory, and industrial real-time control applications requiring stable component supply, long-lifecycle support, and industrial-grade thermal performance.

Supply support for 71V2546S133PFG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a semiconductor company specializing in high-performance timing, memory, and interface solutions for communications and computing infrastructure.

The 71V2546S133PFG belongs to IDT's ZBT™ SRAM product line, designed specifically for high-speed, low-latency data buffering in networking equipment, base stations, and real-time embedded systems demanding deterministic access timing.

FAQ

What is the maximum operating frequency of the 71V2546S133PFG?

The 71V2546S133PFG is rated for a maximum clock frequency of 133 MHz (tCYC = 7.5 ns), verified across the industrial temperature range (–40°C to +85°C) with VDD = 3.3 V ±5% and VDDQ = 2.5 V ±10%. This frequency enables sustained back-to-back read/write operations without bus turnaround penalties due to its ZBT™ architecture.

Does the 71V2546S133PFG support burst mode, and how is it configured?

Yes, the 71V2546S133PFG supports 4-word burst mode using its internal counter. Burst sequence type - linear or interleaved - is selected by the LBO pin (LBO = VSS for linear, LBO = VDD for interleaved). Address loading versus counter increment is controlled by ADV/LD (low = load external address, high = increment).

What is the function of the three chip enable pins (CE1, CE2, CE2) on the 71V2546S133PFG?

The 71V2546S133PFG uses CE1, CE2, and CE2 as independent chip enables: CE = active when CE1 = L, CE2 = L, and CE2 = H. Any deviation deselects the device. Pending read/write transfers complete before outputs go high-impedance, ensuring data integrity during chip deselection.

How does the 71V2546S133PFG implement zero bus turnaround (ZBT™)?

The 71V2546S133PFG achieves ZBT™ by eliminating dead cycles between read and write operations through fully pipelined address and data registers, synchronized output enable, and internal burst counter logic. This allows immediate transition from write to read (or vice versa) on consecutive clock edges without bus idle time.

Is the 71V2546S133PFG available in both commercial and industrial temperature grades?

Yes, the 71V2546S133PFG is offered in industrial temperature grade (–40°C to +85°C), as confirmed in the datasheet's Recommended Operating Conditions table. The "PFG" suffix denotes the 100-pin TQFP package with industrial temperature qualification. Commercial grade variants exist but are distinct part numbers.

71V2546S133PFG Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
100-LQFP
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR (ZBT)
Memory Size:
4.5Mbit
Memory Organization:
128K x 36
Memory Interface:
Parallel
Clock Frequency:
133 MHz
Write Cycle Time - Word, Page:
-
Access Time:
4.2 ns
Voltage - Supply:
3.135V ~ 3.465V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
100-TQFP (14x14)

71V2546S133PFG FAQ

1.How can I place an order for 71V2546S133PFG through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V2546S133PFG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V2546S133PFG reliable?

The price and inventory of 71V2546S133PFG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V2546S133PFG is usually 5 days.

3.What payment methods are accepted for 71V2546S133PFG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V2546S133PFG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 71V2546S133PFG?

71V2546S133PFG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V2546S133PFG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V2546S133PFG?

For technical support, including 71V2546S133PFG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V2546S133PFG requirements.

6.How does Aetrix verify that 71V2546S133PFG is sourced from the original manufacturer or authorized distributors?

All 71V2546S133PFG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V2546S133PFG meets industry standards.

7.What is the process for return or replacement of 71V2546S133PFG?

All 71V2546S133PFG units undergo pre-shipment inspection (PSI). If there is an issue with 71V2546S133PFG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V2546S133PFG part is unused and in its original packaging.

Return procedure for 71V2546S133PFG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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