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Renesas 71V2546S133PFG8

Part No.:
71V2546S133PFG8
Manufacturer:
Renesas
Category:
Memory
Package:
100-LQFP
Datasheet:
Aetrix71V2546S133PFG8.pdf
Description:
IC SRAM 4.5MBIT PARALLEL 100TQFP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,107

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Product details

Overview

71V2546S133PFG8 from IDT (now Renesas) is a 3.3V, 128K × 36-bit synchronous ZBT™ SRAM with pipelined outputs, 133 MHz operation (7.5 ns clock-to-data), 2.5V I/O supply, and zero bus turnaround architecture. It features four-word burst capability (linear or interleaved), individual byte write control (BW1–BW4), and three chip enables for depth expansion - deployed in high-speed packet buffering and network switch data planes.

For engineers reviewing the 71V2546S133PFG8 datasheet, 71V2546S133PFG8 pinout, 71V2546S133PFG8 application, or 71V2546S133PFG8 equivalent, key selection criteria include its ZBT timing behavior, 100-pin TQFP package compatibility, industrial temperature support (–40°C to +85°C), and strict 3.3V core / 2.5V I/O voltage separation.

Technical Context

This SRAM implements fully synchronous, positive-edge-triggered registers for address, control, and data paths, enabling full pipelining with two-cycle latency from address/control registration to data output. Its internal burst counter and LBO-controlled linear/interleaved addressing eliminate external sequencing logic.

The device uses three independent chip enables (CE1, CE2, CE2) with hierarchical deselection logic, Clock Enable (CEN) for cycle suspension, and internally synchronized OE to remove timing constraints on output enable assertion - all supporting deterministic, dead-cycle-free read/write transitions.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization 128K × 36 bits (4.5 Mbit); supports 36-bit wide data path without external multiplexing.
Max Clock Frequency 133 MHz; enables 7.5 ns clock-to-data access time for real-time packet processing.
Core Supply Voltage VDD = 3.3 V ±5%; requires stable low-noise 3.3V rail separate from I/O domain.
I/O Supply Voltage VDDQ = 2.5 V; isolates I/O signaling from core logic, enabling interface to 2.5V ASICs/FPGAs.
Operating Temperature –40°C to +85°C; qualified for industrial-grade networking and telecom infrastructure.
Burst Mode 4-word burst (linear or interleaved via LBO pin); reduces address bus traffic by 75% per transaction.
Write Control Individual byte write enables BW1–BW4; allows partial writes without read-modify-write overhead.

Pinout & Package

Packaged in JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pin 1 marked by dot; top-side marking includes "71V2546S133PFG8" and date code.

Pin Circuit Role Design Meaning
A0–A16 Address Inputs 17-bit address bus; latched on rising CLK edge; supports 128K depth (217 = 131,072 words).
R/W Read/Write Control Single synchronous control pin; determines direction of current burst cycle at load time.
ADV/LD Address Load/Burst Advance Low = load external address; High = increment internal burst counter; defines burst sequence start.
LBO Linear/Interleaved Burst Select Connected to VSS for linear burst (0,1,2,3), VDD for interleaved (0,2,1,3); sets burst order unambiguously.
BW1–BW4 Byte Write Enables Active-low per-byte controls; each enables one 9-bit subword (I/O[0:8], [9:17], [18:26], [27:35]).
CE1, CE2, CE2 Chip Enables Three independent enables; chip selected only when CE1=L, CE2=L, CE2=H; enables multi-chip depth expansion.
CLK System Clock Input Positive-edge-triggered master clock; all synchronous inputs referenced to this edge; no internal PLL.
CEN Clock Enable Asynchronous suspend: when high, blocks CLK propagation; registers retain state; no power-down mode.
OE Output Enable Asynchronous active-low; forces I/O pins to high-impedance regardless of clock or R/W state.
I/O[0:31], I/OP[1:4] Data I/O Bus 32 data bits + 4 parity bits; bidirectional; driven only during valid read cycles or write data windows.
VDD, VDDQ, VSS Power/Termination VDD (3.3V core), VDDQ (2.5V I/O), VSS (common ground); multiple dedicated pins per supply for low-impedance routing.

Key Features

Feature Design Value
ZBT™ Zero Bus Turnaround Eliminates dead cycles between read and write bursts - enables back-to-back memory transactions at full clock rate.
Internally Synchronized OE Removes setup/hold timing constraints on OE assertion; simplifies system-level timing closure for burst-mode interfaces.
Pipelined Output Registers Two-stage pipeline (address/control → data) guarantees deterministic 2-clock-cycle latency; no variable delay.
Four-Word Burst Counter Hardware counter increments automatically on ADV/LD high; eliminates external burst sequencer logic and associated routing.
Independent Byte Write Control Four BW pins allow selective 9-bit writes without disturbing other bytes - critical for header modification in packet buffers.

Applications

Network Packet Buffering High-Speed Switch Fabric Interface

Use Scenario: Storing ingress/egress Ethernet frames in Layer 2/L3 switches before forwarding decisions.

IC Role / Device Role / Timing Role: Primary data buffer SRAM interfacing directly to switch fabric ASIC; operates at 133 MHz with zero-turnaround burst reads/writes.

Use Value: Eliminates inter-burst idle cycles, sustaining >95% bus utilization during sustained 10Gbps+ traffic bursts.

Use Scenario: Temporary storage of cell/packet headers and pointers in ATM or MPLS switching engines.

IC Role / Device Role / Timing Role: Synchronous burst-access memory for header lookup and rewrite pipelines; clocked by fabric reference clock.

Use Value: Linear/interleaved burst modes align with ASIC's internal address mapping, reducing address generation logic.

Telecom Line Card Memory Industrial Real-Time Controller Cache

Use Scenario: Holding protocol stack buffers and statistics counters in carrier-grade SDH/SONET line cards.

IC Role / Device Role / Timing Role: Industrial-temperature SRAM providing deterministic access for time-critical OAM&P functions.

Use Value: –40°C to +85°C rating ensures reliability in uncooled chassis; 3.3V/2.5V dual-rail design matches legacy telecom ASIC I/O.

Use Scenario: Caching motion control parameters and sensor fusion data in CNC or robotics controllers.

IC Role / Device Role / Timing Role: Low-latency scratchpad memory for deterministic servo loop execution; accessed via FPGA controller.

Use Value: Individual byte write enables permit atomic updates of 16-bit position registers without corrupting adjacent status fields.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C1315KV18-133BZI 128K × 18 organization; 1.8V I/O; different burst addressing scheme (no LBO pin); 165-ball BGA only. Requires two devices for 36-bit width; incompatible pinout and voltage; suited for newer 1.8V FPGA designs. Select only if migrating to 1.8V I/O ecosystem and redesigning PCB layout for BGA.
AS7C31026B-133JCIN 128K × 32 organization; 3.3V-only I/O; no ZBT mode; asynchronous OE; 100-pin TQFP but different pin assignment. Lacks zero-turnaround and burst counter; higher latency (12 ns); suitable for non-burst, lower-bandwidth control plane use. Choose only when ZBT timing and burst features are unnecessary and cost is primary constraint.

Compared with CY7C1315KV18-133BZI and AS7C31026B-133JCIN, the 71V2546S133PFG8 uniquely delivers 36-bit width, true ZBT timing, and LBO-selectable burst ordering in a drop-in 100-pin TQFP - making it irreplaceable for legacy high-speed networking designs requiring minimal layout change.

Availability

71V2546S133PFG8 is available at Aetrix Electronics and suitable for network switch buffering, telecom line card memory, and industrial real-time controller cache applications requiring stable component supply across extended product lifecycles.

Supply support for 71V2546S133PFG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory, and interface solutions for communications and computing infrastructure.

The 71V2546S133PFG8 belongs to IDT's ZBT SRAM product line, engineered specifically for zero-latency, high-throughput data buffering in packet-switched networks and telecom systems where deterministic burst access is mandatory.

FAQ

What is the maximum operating frequency of the 71V2546S133PFG8?

The 71V2546S133PFG8 is rated for 133 MHz operation, corresponding to a 7.5 ns clock period and guaranteed 7.5 ns clock-to-data access time under commercial and industrial temperature conditions. This frequency is validated with VDD = 3.3 V ±5% and VDDQ = 2.5 V, and assumes proper signal integrity and termination per the datasheet AC test conditions.

Does the 71V2546S133PFG8 support true ZBT™ (Zero Bus Turnaround) operation?

Yes, the 71V2546S133PFG8 implements true ZBT™ architecture: it eliminates dead cycles between consecutive read and write bursts by overlapping bus turnaround with the next address setup. This behavior is intrinsic to its internal control logic and requires no external sequencing - confirmed in the functional description, truth tables, and timing diagrams of the official datasheet.

What package type and pin count does the 71V2546S133PFG8 use?

The 71V2546S133PFG8 is supplied exclusively in a 100-pin plastic thin quad flatpack (TQFP) per JEDEC MO-145, with 0.5 mm pitch and 14 mm × 20 mm body size. The "PFG8" suffix explicitly denotes this TQFP package; no BGA variant carries the same full part number.

Can the 71V2546S133PFG8 operate with only a 3.3V supply, or is the 2.5V I/O supply mandatory?

The 2.5V I/O supply (VDDQ) is mandatory for correct operation of the 71V2546S133PFG8. The device uses separate 3.3V (VDD) for core logic and 2.5V (VDDQ) for I/O drivers/receivers. Operating VDDQ outside 2.2V–2.7V violates absolute maximum ratings and will cause I/O level incompatibility or functional failure - as specified in the Recommended DC Operating Conditions table.

How does burst addressing work on the 71V2546S133PFG8, and what controls the sequence order?

Burst addressing on the 71V2546S133PFG8 is controlled by the LBO (Linear/Interleaved Burst Order) pin: tied to VSS for linear order (A0, A1, A2, A3) or VDD for interleaved order (A0, A2, A1, A3). The internal burst counter advances on ADV/LD = HIGH, and the full 4-word sequence is generated from a single loaded base address - eliminating need for external address generation logic.

71V2546S133PFG8 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
100-LQFP
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR (ZBT)
Memory Size:
4.5Mbit
Memory Organization:
128K x 36
Memory Interface:
Parallel
Clock Frequency:
133 MHz
Write Cycle Time - Word, Page:
-
Access Time:
4.2 ns
Voltage - Supply:
3.135V ~ 3.465V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
100-TQFP (14x14)

71V2546S133PFG8 FAQ

1.How can I place an order for 71V2546S133PFG8 through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V2546S133PFG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V2546S133PFG8 reliable?

The price and inventory of 71V2546S133PFG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V2546S133PFG8 is usually 5 days.

3.What payment methods are accepted for 71V2546S133PFG8?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V2546S133PFG8 transactions.

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4.How is shipping managed for 71V2546S133PFG8?

71V2546S133PFG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V2546S133PFG8 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V2546S133PFG8?

For technical support, including 71V2546S133PFG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V2546S133PFG8 requirements.

6.How does Aetrix verify that 71V2546S133PFG8 is sourced from the original manufacturer or authorized distributors?

All 71V2546S133PFG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V2546S133PFG8 meets industry standards.

7.What is the process for return or replacement of 71V2546S133PFG8?

All 71V2546S133PFG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V2546S133PFG8, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V2546S133PFG8 part is unused and in its original packaging.

Return procedure for 71V2546S133PFG8:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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