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Renesas 71V2546S150BG
- Part No.:
- 71V2546S150BG
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V2546S150BG.pdf
- Description:
- IC SRAM 4.5MBIT PAR 119PBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,324
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Product details
Overview
71V2546S150BG from IDT (now Renesas) is a 128K × 36-bit (4.5 Mbit), 3.3V synchronous ZBT™ SRAM with 2.5V I/O, pipelined outputs, and 150 MHz operation (3.8 ns clock-to-data access). It features zero bus turnaround (ZBT), single R/W control, 4-word burst (linear/interleaved), individual byte write (BW1–BW4), and three chip enables for depth expansion. Used in high-speed packet buffering and network switch fabric memory subsystems.
For engineers reviewing the 71V2546S150BG datasheet, 71V2546S150BG pinout, 71V2546S150BG application, or 71V2546S150BG equivalent, key selection criteria include ZBT timing compliance, 100-pin TQFP or 119-ball BGA package compatibility, industrial temperature support (–40°C to +85°C), 2.5V I/O voltage tolerance, and burst counter behavior under ADV/LD and LBO control.
Technical Context
This device implements a fully synchronous, pipelined SRAM architecture with positive-edge-triggered address, data, and control registers. Its ZBT feature eliminates dead cycles between read and write operations by overlapping bus turnaround with internal memory access.
The on-chip burst counter supports both linear and interleaved sequences selected via LBO, while ADV/LD controls either external address load (LOW) or internal counter increment (HIGH). Output enable (OE) is asynchronous but internally synchronized to eliminate timing constraints on OE assertion.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36 bits (4.5 Mbit); supports 36-bit wide data path for high-throughput buffering. |
| Max Clock Frequency | 150 MHz; enables 3.8 ns clock-to-data access time for real-time packet processing pipelines. |
| Supply Voltages | VDD = 3.3 V ±5%, VDDQ = 2.5 V; dual-supply design isolates core logic from I/O domain to reduce noise coupling. |
| Burst Capability | 4-word burst (linear or interleaved); reduces address overhead and improves bandwidth efficiency in sequential access patterns. |
| Operating Temperature | –40°C to +85°C (industrial grade); qualified for deployment in telecom infrastructure and industrial networking equipment. |
| Package Options | JEDEC-standard 100-pin TQFP (14 mm × 20 mm) and 119-ball BGA; both support standard PCB assembly processes. |
| ZBTTM Feature | Zero Bus Turnaround eliminates idle cycles between read/write transitions; critical for deterministic latency in switch fabric buffers. |
Pinout & Package
Packaged in JEDEC-standard 100-pin plastic thin quad flatpack (TQFP) and 119-ball grid array (BGA); both packages support industrial temperature range and green material compliance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address Inputs | 17-bit address bus supporting full 128K depth; sampled on rising CLK edge for synchronous access. |
| CLK | System Clock Input | Positive-edge-triggered master clock; all synchronous inputs referenced to this edge for pipelined timing. |
| R/W | Read/Write Control | Single bidirectional control signal; determines cycle direction at burst initiation (not per-word). |
| ADV/LD | Address Load/Burst Counter Advance | LOW loads external address; HIGH increments internal burst counter - defines burst sequence origin. |
| LBO | Linear/Interleaved Burst Order Select | Connect to VSS for linear burst (0,1,2,3); to VDD for interleaved (0,2,1,3) - configures memory access pattern. |
| BW1–BW4 | Byte Write Enables | Four independent 9-bit write masks; allow partial writes without read-modify-write overhead. |
| CE1, CE2, CE2 | Chip Enable Inputs | Three enables support hierarchical decoding; any false CE deactivates device after 2-cycle delay. |
| I/O[0:31], I/OP[1:4] | Data I/O Bus | 36-bit bidirectional data path (32 data + 4 parity); operates at 2.5V I/O level with 50 Ω AC test load. |
| CEN | Clock Enable | Asynchronous suspend: holds all internal registers when HIGH; no clock propagation during suspension. |
| OE | Output Enable | Asynchronous but internally synchronized; disables outputs without affecting internal pipeline state. |
| VDD, VDDQ, VSS | Power Supplies | VDD (3.3V core), VDDQ (2.5V I/O), VSS (ground); multiple pins per supply ensure low-impedance distribution. |
Key Features
| Feature | Design Value |
|---|---|
| ZBTTM Architecture | Eliminates bus turnaround dead cycles between reads and writes - enables continuous 150 MHz throughput in burst mode. |
| Pipelined Output Registers | Internally synchronizes OE control, removing external timing constraints and simplifying system-level timing closure. |
| 4-Word Burst with Programmable Order | Reduces address bus activity by 75% per burst; LBO pin selects linear or interleaved sequence to match processor/cache behavior. |
| Individual Byte Write Control | BW1–BW4 enable selective 9-bit writes without disturbing adjacent bytes - essential for protocol header manipulation. |
| Three Independent Chip Enables | Supports seamless depth expansion across multiple devices without external logic; each CE asserts independently for flexible memory mapping. |
| Industrial Temperature Range | Qualified from –40°C to +85°C - meets reliability requirements for carrier-grade networking hardware deployed in uncontrolled environments. |
Applications
| Network Switch Buffering | Telecom Line Card Memory |
|---|---|
|
Use Scenario: Storing ingress/egress packet headers and metadata in multi-gigabit Ethernet switches. IC Role / Device Role / Timing Role: High-speed, low-latency buffer with deterministic ZBT timing for cut-through forwarding engines. Use Value: 150 MHz operation and zero-turnaround burst mode sustain 5.4 GB/s sustained bandwidth (36-bit × 150 MHz) for line-rate packet processing. |
Use Scenario: Frame buffering in OC-192/STM-64 SONET/SDH line interface cards. IC Role / Device Role / Timing Role: Synchronous SRAM providing pipelined, burst-capable storage for ATM cell or packet reassembly. Use Value: 4-word burst and programmable LBO align with SONET pointer processing and cell payload alignment requirements. |
| Base Station Baseband Processing | Radar Signal Processing Buffer |
|
Use Scenario: Temporary storage of OFDMA symbols and channel estimation data in LTE/5G macro base stations. IC Role / Device Role / Timing Role: Low-jitter, pipelined memory interfacing directly with FPGA-based digital front-end logic. Use Value: 2.5V I/O and 3.3V core separation minimizes switching noise coupling into sensitive RF sections. |
Use Scenario: Real-time buffering of ADC samples and FFT intermediate results in pulsed radar systems. IC Role / Device Role / Timing Role: Deterministic-access SRAM supporting fixed-latency DMA transfers between ADC and DSP cores. Use Value: Industrial temperature rating ensures stable operation in outdoor radar enclosures exposed to wide ambient swings. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1362BV18-167BZI | 128K × 18-bit, 167 MHz, 1.8V core/1.8V I/O; half the data width, higher speed, lower voltage. | Requires two devices for 36-bit width; better suited for power-constrained, high-density FPGA interfaces. | Select when system uses 1.8V I/O standards and can accommodate dual-device width expansion. |
| AS7C3256B-15JCIN | 32K × 8-bit, 15 ns async access, 3.3V only; no burst, no ZBT, no pipelining. | Lower density and asynchronous interface limit use to non-real-time control-plane memory or legacy upgrades. | Select only for cost-sensitive, non-bursting applications where latency tolerance exceeds 15 ns. |
Compared with CY7C1362BV18-167BZI and AS7C3256B-15JCIN, the 71V2546S150BG uniquely delivers 36-bit width, ZBT timing, and industrial temperature support in a single monolithic device - eliminating inter-device skew and simplifying layout for high-reliability telecom designs.
Availability
71V2546S150BG is available at Aetrix Electronics and suitable for network switch buffering, telecom line card memory, base station baseband processing, and radar signal processing requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for 71V2546S150BG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology), now part of Renesas Electronics, is a semiconductor company specializing in timing, memory interface, and high-performance memory solutions for communications and computing infrastructure.
The 71V2546S150BG belongs to IDT's ZBT SRAM product line, designed specifically for deterministic, low-latency buffering in high-speed packet-switched networks and telecom equipment where bus turnaround overhead must be eliminated.
FAQ
What does the 'S150BG' suffix indicate in 71V2546S150BG?
The 'S150BG' suffix denotes the specific variant of the 71V2546S: 'S' indicates the commercial/industrial grade version, '150' specifies the 150 MHz maximum clock frequency, and 'BG' identifies the 119-ball BGA package. This distinguishes it from the TQFP-packaged 71V2546S150PG and other speed/package combinations within the same family.
Does 71V2546S150BG support true zero bus turnaround in all operating modes?
Yes, the 71V2546S150BG implements ZBTTM (Zero Bus Turnaround) architecture across all supported burst and random access modes. When transitioning between read and write cycles - including back-to-back bursts - the device overlaps bus direction change with internal memory access, eliminating dead cycles and maintaining full 150 MHz throughput without external wait-state insertion.
How is burst order controlled on the 71V2546S150BG?
Burst order on the 71V2546S150BG is controlled by the LBO (Linear/Interleaved Burst Order) pin: tying LBO to VSS selects linear burst (0,1,2,3), while tying it to VDD selects interleaved burst (0,2,1,3). The selected mode applies to all subsequent burst cycles until LBO state changes, and is independent of ADV/LD or R/W configuration.
Can the 71V2546S150BG operate with only two chip enables asserted?
No - the 71V2546S150BG requires CE1 = LOW, CE2 = LOW, and CE2 = HIGH (note duplicate CE2 labeling in datasheet) to select the device. If any one of these three chip enables is not asserted in the required state when ADV/LD is LOW, no new memory operation initiates. Pending transfers complete, but the device remains deselected for new commands.
Is the 71V2546S150BG compatible with 3.3V-only systems lacking a 2.5V supply?
No - the 71V2546S150BG mandates separate 3.3V (VDD) and 2.5V (VDDQ) supplies. VDDQ powers all I/O buffers and must be regulated at 2.5V ±5%; applying 3.3V to VDDQ violates absolute maximum ratings and risks permanent damage. Systems must provide dedicated 2.5V I/O rail decoupled per datasheet guidelines.
71V2546S150BG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 150 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.8 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V2546S150BG FAQ
1.How can I place an order for 71V2546S150BG through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V2546S150BG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V2546S150BG reliable?
The price and inventory of 71V2546S150BG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V2546S150BG is usually 5 days.
3.What payment methods are accepted for 71V2546S150BG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V2546S150BG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V2546S150BG?
71V2546S150BG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V2546S150BG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V2546S150BG?
For technical support, including 71V2546S150BG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V2546S150BG requirements.
6.How does Aetrix verify that 71V2546S150BG is sourced from the original manufacturer or authorized distributors?
All 71V2546S150BG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V2546S150BG meets industry standards.
7.What is the process for return or replacement of 71V2546S150BG?
All 71V2546S150BG units undergo pre-shipment inspection (PSI). If there is an issue with 71V2546S150BG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V2546S150BG part is unused and in its original packaging.
Return procedure for 71V2546S150BG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V2546S150BG Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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24LC01BT-I/OT
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M24C02-FMC6TG
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AT24CS02-SSHM-T
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93LC46BT-I/OT
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
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24AA02UIDT-I/OT
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AT24C08C-STUM-T
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