Renesas 71V2546S150BG8

Overview

71V2546S150BG8 from IDT is a 128K × 36-bit (4.5 Mbit), 3.3V synchronous ZBT™ SRAM with 2.5V I/O, 150 MHz operation (3.8 ns clock-to-data access), pipelined outputs, and zero-bus-turnaround architecture. It serves as high-speed buffer/cache memory in network packet processors, telecom line cards, and FPGA co-processor subsystems requiring deterministic burst read/write latency.

For engineers reviewing the 71V2546S150BG8 datasheet, 71V2546S150BG8 pinout, 71V2546S150BG8 application, or 71V2546S150BG8 equivalent, key selection criteria include ZBT timing compliance, 4-word burst mode support (linear/interleaved), individual byte write control (BW1–BW4), triple chip enable for depth expansion, and industrial temperature range (–40°C to +85°C) suitability.

Technical Context

This SRAM implements fully synchronous, positive-edge-triggered registers for address, data, and control signals, enabling full pipelining with two-cycle latency between address/control registration and data transfer. Its internal burst counter and ADV/LD-controlled address incrementing support both linear and interleaved 4-word burst sequences without external logic.

ZBT functionality eliminates dead cycles between read and write operations via internally synchronized output buffer enable (OE), removing need for external OE timing control. The device uses separate 3.3V core (VDD) and 2.5V I/O (VDDQ) supplies, with dedicated VSS pins per power domain and ZZ sleep mode support on select pins (e.g., BGA Pin T7).

Key Specifications

Pinout & Package

71V2546S150BG8 is packaged in a JEDEC-standard 119-ball grid array (BG119) with 0.8 mm pitch, 14 mm × 14 mm body size, and exposed thermal pad. The package supports industrial temperature operation and provides dedicated VDD, VDDQ, and VSS balls for low-noise power delivery.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1355KV18-167BZI and AS7C3256A-15JC, the 71V2546S150BG8 uniquely delivers 128K × 36-bit width with ZBT timing and industrial temperature support - making it optimal for high-throughput, wide-bus packet and signal processing systems where bus turnaround efficiency is paramount.

Availability

71V2546S150BG8 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, FPGA co-processor cache, and real-time signal processing applications requiring stable component supply across extended product lifecycles.

Supply support for 71V2546S150BG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a semiconductor company specializing in timing, memory interface, RF, and high-performance interconnect solutions for communications and computing markets.

The 71V2546S150BG8 belongs to IDT's ZBT SRAM product line, designed specifically for high-speed networking and telecom infrastructure where deterministic latency, zero-bus-turnaround efficiency, and industrial-grade reliability are mandatory.

FAQ

What does the 'S150BG8' suffix indicate in 71V2546S150BG8?

The 'S150BG8' suffix specifies the speed grade (150 MHz maximum clock frequency), package type (119-ball BGA), and industrial temperature range (–40°C to +85°C). The 'S' denotes the ZBT SRAM family, '150' is the speed rating, 'BG' identifies the BGA package, and '8' indicates industrial qualification per IDT's ordering nomenclature.

Does 71V2546S150BG8 support both linear and interleaved burst modes?

Yes, 71V2546S150BG8 supports both linear and interleaved 4-word burst sequences. The LBO (Linear/Interleaved Burst Order) pin selects the mode: tied to VSS for linear addressing (A0, A1, A2, A3), or to VDD for interleaved (A0, A2, A1, A3), as defined in JEDEC JESD21-C standards.

How is the 71V2546S150BG8 different from standard synchronous SRAMs?

Unlike standard synchronous SRAMs, the 71V2546S150BG8 implements ZBTTM architecture that eliminates dead cycles between read and write operations. It also features an on-chip burst counter, pipelined outputs, and internally synchronized OE - reducing external timing control complexity and improving effective bandwidth.

Can 71V2546S150BG8 operate with only one chip enable asserted?

No - correct chip selection requires CE1 = LOW, CE2 = LOW, and CE2 = HIGH simultaneously. If any of these three conditions fails while ADV/LD is LOW, no new memory operation initiates. However, pending transfers complete before outputs tri-state two cycles after deselect.

What is the purpose of the ZZ (sleep mode) pin on 71V2546S150BG8?

The ZZ pin enables low-power sleep mode: when driven HIGH, it places the 71V2546S150BG8 into standby, reducing ICC to ≤10 µA. On the BG119 package, ZZ is assigned to Pin T7 (per latest die revision), and is internally pulled to VSS if left unconnected.