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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas 71V2546S150PFG

Name: 71V2546S150PFG
Brand: Renesas
SKU: 71V2546S150PFG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 71V2546S150PFG

Manufacturer:: Renesas

Category:: Memory

Package:: 100-LQFP

Datasheet:: 71V2546S150PFG.pdf

Description:: IC SRAM 4.5MBIT PARALLEL 100TQFP

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Product details

Overview

71V2546S150PFG from IDT (now Renesas) is a 128K × 36-bit (4.5 Mbit), 3.3V synchronous ZBT™ SRAM with 2.5V I/O, pipelined outputs, and zero bus turnaround architecture. It operates at 150 MHz (3.8 ns clock-to-data access), supports 4-word linear/interleaved burst, individual byte write control (BW1–BW4), and features three chip enables for depth expansion. It is used in high-speed networking packet buffers and telecom line-card data path memory.

For engineers reviewing the 71V2546S150PFG datasheet, 71V2546S150PFG pinout, 71V2546S150PFG application, or 71V2546S150PFG equivalent, key selection criteria include ZBT timing compliance, TQFP-100 package compatibility, industrial temperature support (–40°C to +85°C), 3.3V core / 2.5V I/O voltage separation, and burst counter behavior under ADV/LD and LBO control.

Technical Context

This device implements a fully synchronous, positive-edge-triggered architecture with registered address, data, and control inputs. Its ZBT™ operation eliminates dead cycles between read and write transitions by overlapping bus turnaround with internal pipeline stages.

The on-chip 4-word burst counter-configured via LBO (linear vs. interleaved)-is advanced by ADV/LD, while CEN provides clock gating for power management. Output enable (OE) is asynchronous but internally synchronized to eliminate external timing constraints on output control.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	128K × 36 bits (4.5 Mbit); supports 36-bit wide data path for high-throughput buffering
Max Clock Frequency	150 MHz; enables 3.8 ns clock-to-data access for real-time packet processing
Core Supply Voltage	VDD = 3.3 V ±5%; decoupled from I/O domain to reduce noise coupling into sensitive analog circuitry
I/O Supply Voltage	VDDQ = 2.5 V; matches 2.5V logic families (e.g., LVCMOS25) without level-shifting
Operating Temperature	–40°C to +85°C; qualified for industrial-grade embedded systems and telecom infrastructure
Burst Capability	4-word burst (linear or interleaved); reduces address bus traffic and improves bandwidth efficiency
Write Control	Independent BW1–BW4 pins; enables selective byte writes without masking logic or additional glue logic

Pinout & Package

Packaged in JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pin 64 supports ZZ (sleep mode) on latest die revision.

Pin/Terminal	Circuit Role	Design Meaning
A0–A16	Address Inputs	17-bit address bus; accesses full 128K depth; synchronous, edge-triggered registration
CLK	System Clock Input	Positive-edge-triggered master clock; all registers (address, control, data) sample on rising edge
R/W	Read/Write Control	Single pin determines cycle direction; status latched at first address load of burst sequence
ADV/LD	Address Load/Burst Counter Advance	Low = load external address; High = increment internal burst counter; defines burst start point
LBO	Burst Order Select	Low = linear burst (A0,A1,A2,A3); High = interleaved burst (A0,A2,A1,A3); sets burst addressing pattern
BW1–BW4	Byte Write Enables	Active-low per-byte write masks; each controls one 9-bit subword (36-bit ÷ 4 = 9-bit bytes)
CE1, CE2, CE2	Chip Enable Inputs	Three independent enables; any false condition deselects device; allows flexible depth expansion
OE	Output Enable	Asynchronous but internally synchronized; disables outputs without affecting internal state or timing
CEN	Clock Enable	High = blocks clock propagation; holds all register states; enables low-power idle without reset
I/O0–I/O31, I/OP1–I/OP4	Data I/O Bus	36-bit bidirectional bus (32 data + 4 parity); VDDQ-referenced; supports 2.5V signaling
VDD, VDDQ, VSS	Power Supplies	VDD (3.3V core), VDDQ (2.5V I/O), VSS (common ground); separate supplies isolate switching noise
ZZ (Pin 64)	Deep Sleep Mode	Active-low; places device in ultra-low-power state (I_DD ≤ 5 µA); supported on latest die revision

Key Features

Feature	Design Value
ZBTTM Zero Bus Turnaround	Eliminates dead cycles between read/write transitions; sustains 100% bus utilization in burst sequences
Internally Synchronized OE	Removes setup/hold timing constraints on OE signal; simplifies system-level timing closure
4-Word Burst Counter	Reduces address bus activity by 75% per burst; supports both linear and interleaved addressing modes
Individual Byte Write Control	Enables granular 9-bit writes without external byte-lane gating; preserves data integrity in partial updates
Three Independent Chip Enables	Supports seamless depth expansion across multiple devices without external decode logic
ZZ Sleep Mode (Pin 64)	Reduces standby current to ≤5 µA; enables dynamic power gating in low-activity system states

Applications

Packet Buffer Memory	Telecom Line Card
Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in Layer 2/3 switches. IC Role / Device Role / Timing Role: High-bandwidth, low-latency dual-port buffer supporting concurrent ingress/egress traffic with zero-turnaround burst reads/writes. Use Value: 150 MHz operation and ZBT architecture deliver sustained 5.4 GB/s (150 MHz × 36-bit) throughput, minimizing packet loss during congestion.	Use Scenario: Frame buffering in SONET/SDH add-drop multiplexers and optical transport equipment. IC Role / Device Role / Timing Role: Synchronous SRAM acting as elastic store for jitter compensation and rate adaptation between line and system clocks. Use Value: Pipelined outputs and 3.8 ns clock-to-data access ensure deterministic latency for precise timing alignment in telecom timing recovery loops.
Network Processor Interface	Industrial Control Data Logging
Use Scenario: Offloading packet classification and lookup table storage from network processors. IC Role / Device Role / Timing Role: External memory extension for NPU instruction/data caches, accessed via burst-mode AXI-like interface. Use Value: 4-word burst capability and BW1–BW4 control allow efficient cache line fills and partial updates without bus contention.	Use Scenario: High-speed acquisition and temporary storage of sensor data streams in programmable logic controllers. IC Role / Device Role / Timing Role: Buffered memory staging area between ADC interfaces and FPGA-based processing pipelines. Use Value: Industrial temperature rating (–40°C to +85°C) and robust 3.3V/2.5V supply separation ensure reliable operation in harsh factory environments.

Packet Buffer Memory

Telecom Line Card

Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in Layer 2/3 switches.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency dual-port buffer supporting concurrent ingress/egress traffic with zero-turnaround burst reads/writes.

Use Value: 150 MHz operation and ZBT architecture deliver sustained 5.4 GB/s (150 MHz × 36-bit) throughput, minimizing packet loss during congestion.

Use Scenario: Frame buffering in SONET/SDH add-drop multiplexers and optical transport equipment.

IC Role / Device Role / Timing Role: Synchronous SRAM acting as elastic store for jitter compensation and rate adaptation between line and system clocks.

Use Value: Pipelined outputs and 3.8 ns clock-to-data access ensure deterministic latency for precise timing alignment in telecom timing recovery loops.

Network Processor Interface

Industrial Control Data Logging

Use Scenario: Offloading packet classification and lookup table storage from network processors.

IC Role / Device Role / Timing Role: External memory extension for NPU instruction/data caches, accessed via burst-mode AXI-like interface.

Use Value: 4-word burst capability and BW1–BW4 control allow efficient cache line fills and partial updates without bus contention.

Use Scenario: High-speed acquisition and temporary storage of sensor data streams in programmable logic controllers.

IC Role / Device Role / Timing Role: Buffered memory staging area between ADC interfaces and FPGA-based processing pipelines.

Use Value: Industrial temperature rating (–40°C to +85°C) and robust 3.3V/2.5V supply separation ensure reliable operation in harsh factory environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY7C1354BV18-167BZI	128K × 36, 167 MHz, 1.8V I/O, BGA-119; no ZZ mode; different burst control (MODE pin vs. LBO)	Targets higher-speed designs requiring >150 MHz; requires 1.8V I/O infrastructure and BGA assembly	Select when system demands >150 MHz and supports 1.8V I/O; verify burst sequencing compatibility with MODE pin logic
AS7C31026B-15JCIN	128K × 32, 150 MHz, 3.3V only (no VDDQ separation), TQFP-100; no burst counter or ZBT optimization	Suitable for cost-sensitive non-ZBT applications where 32-bit width suffices and bus turnaround overhead is acceptable	Select only if ZBT timing and 36-bit width are not required; confirm compatibility with 32-bit data path and absence of burst features

Compared with CY7C1354BV18-167BZI and AS7C31026B-15JCIN, the 71V2546S150PFG uniquely delivers ZBT timing, 2.5V I/O separation, and LBO-configurable burst order in a drop-in TQFP-100 footprint-making it optimal for legacy telecom and networking upgrades where layout reuse and deterministic latency are critical.

Availability

71V2546S150PFG is available at Aetrix Electronics and suitable for high-speed networking packet buffers, telecom line-card memory, and industrial control data logging requiring stable component supply and long-term industrial temperature support.

Supply support for 71V2546S150PFG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a semiconductor company specializing in timing, memory interface, and RF solutions for communications and computing infrastructure.

The 71V2546S150PFG belongs to IDT's ZBT™ SRAM product line, designed specifically for high-performance packet-processing systems requiring zero bus turnaround, burst efficiency, and industrial-grade reliability.

FAQ

What is the maximum operating frequency of the 71V2546S150PFG?

The 71V2546S150PFG is rated for a maximum clock frequency of 150 MHz, corresponding to a 3.8 ns clock-to-data access time. This specification is guaranteed over the full industrial temperature range (–40°C to +85°C) and under recommended 3.3V ±5% VDD and 2.5V ±0.2V VDDQ conditions. Operation beyond 150 MHz is not characterized or supported.

Does the 71V2546S150PFG support true ZBT™ operation with no dead cycles between reads and writes?

Yes, the 71V2546S150PFG implements genuine ZBTTM (Zero Bus Turnaround) architecture. When transitioning between read and write bursts-or vice versa-the device overlaps bus direction change with internal pipeline stages, eliminating dead cycles. This behavior is confirmed in the functional description, truth tables, and timing diagrams of the official datasheet.

What is the function of the LBO pin on the 71V2546S150PFG?

The LBO (Linear/Interleaved Burst Order) pin on the 71V2546S150PFG selects the burst addressing sequence: when pulled low (to VSS), it enables linear burst (A0, A1, A2, A3); when pulled high (to VDD), it enables interleaved burst (A0, A2, A1, A3). This pin directly controls the on-chip burst counter's stepping logic and must be held static during burst operations.

Can the 71V2546S150PFG operate with only two chip enables active?

Yes-the 71V2546S150PFG requires CE1 = L, CE2 = L, and CE2 = H for chip select (per datasheet truth table). CE2 is an inverted enable; thus, asserting CE1 and CE2 low while holding CE2 high satisfies the "three-enable" requirement. All three pins must meet their specified voltage thresholds (V_IL/V_IH) simultaneously for valid selection.

Is ZZ (sleep mode) supported on the 71V2546S150PFG, and which pin implements it?

Yes, ZZ (deep sleep mode) is supported on the latest die revision of the 71V2546S150PFG and is implemented on Pin 64 (labeled NC/ZZ in the TQFP-100 pinout). When driven low, ZZ reduces ICC to ≤5 µA. The feature is documented in the Pin Configuration notes and Absolute Maximum Ratings section of the official datasheet.

71V2546S150PFG Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 100-LQFP

Packaging:: Tray

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous, SDR (ZBT)

Memory Size:: 4.5Mbit

Memory Organization:: 128K x 36

Memory Interface:: Parallel

Clock Frequency:: 150 MHz

Write Cycle Time - Word, Page:: -

Access Time:: 3.8 ns

Voltage - Supply:: 3.135V ~ 3.465V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 100-TQFP (14x14)

71V2546S150PFG FAQ

1.How can I place an order for 71V2546S150PFG through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V2546S150PFG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V2546S150PFG reliable?

The price and inventory of 71V2546S150PFG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V2546S150PFG is usually 5 days.

3.What payment methods are accepted for 71V2546S150PFG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V2546S150PFG transactions.

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4.How is shipping managed for 71V2546S150PFG?

71V2546S150PFG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V2546S150PFG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V2546S150PFG?

For technical support, including 71V2546S150PFG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V2546S150PFG requirements.

6.How does Aetrix verify that 71V2546S150PFG is sourced from the original manufacturer or authorized distributors?

All 71V2546S150PFG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V2546S150PFG meets industry standards.

7.What is the process for return or replacement of 71V2546S150PFG?

All 71V2546S150PFG units undergo pre-shipment inspection (PSI). If there is an issue with 71V2546S150PFG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V2546S150PFG part is unused and in its original packaging.

Return procedure for 71V2546S150PFG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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