Renesas 71V2546S150PFG8

Overview

71V2546S150PFG8 from IDT (now Renesas) is a 128K × 36-bit (4.5 Mbit), 3.3V synchronous ZBT™ SRAM with 2.5V I/O, pipelined outputs, and zero-bus-turnaround architecture. It delivers 150 MHz operation (3.8 ns clock-to-data access), supports 4-word linear/interleaved burst, individual byte write control (BW1–BW4), and operates across industrial temperature (–40°C to +85°C). It is used in high-speed packet buffering and network switch fabric memory subsystems.

For engineers reviewing the 71V2546S150PFG8 datasheet, 71V2546S150PFG8 pinout, 71V2546S150PFG8 application, or 71V2546S150PFG8 equivalent, key selection considerations include ZBT timing compliance, TQFP-100 package compatibility, 3.3V core / 2.5V I/O voltage separation, burst counter behavior under ADV/LD control, and industrial-grade thermal reliability.

Technical Context

This device implements a fully synchronous, clock-edge-triggered architecture with address, data, and control registers aligned to the rising edge of CLK. Its ZBT™ mode eliminates dead cycles between read/write transitions by internally managing bus turnaround via pipelined output enable and burst counter logic.

The on-chip 4-word burst counter increments on ADV/LD = HIGH and loads external addresses on ADV/LD = LOW; LBO selects linear or interleaved sequence. Three chip enables (CE1, CE2, CE2) support depth expansion, while CEN suspends all synchronous operations without affecting register state.

Key Specifications

Pinout & Package

Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, lead-free (Pb-free) and RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1354BV18-167BZC and AS7C3256B-15JC, the 71V2546S150PFG8 uniquely delivers ZBT™-enabled continuous throughput at 150 MHz with integrated burst control and industrial temperature support - making it irreplaceable in high-efficiency packet processing and deterministic test memory roles.

Availability

71V2546S150PFG8 is available at Aetrix Electronics and suitable for network packet buffering, telecom switch fabric memory, industrial PLC data logging, and test equipment pattern memory requiring stable component supply and long-term industrial-grade availability.

Supply support for 71V2546S150PFG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory, and interface solutions for communications and computing infrastructure.

The 71V2546S150PFG8 belongs to IDT's ZBT™ SRAM product line, designed specifically for low-latency, high-throughput memory subsystems in networking, telecom, and industrial real-time control applications.

FAQ

What is the ZBT™ functionality of the 71V2546S150PFG8 and how does it improve system performance?

The 71V2546S150PFG8 implements ZBT™ (Zero Bus Turnaround) architecture, eliminating idle cycles between consecutive read and write operations. Unlike conventional SRAMs that require bus turnaround time, the 71V2546S150PFG8 internally manages direction control and output enable synchronization, enabling true back-to-back access at 150 MHz. This increases effective bandwidth by up to 25% in burst-intensive applications like packet buffering, where rapid alternation between read and write is common.

Does the 71V2546S150PFG8 support both linear and interleaved burst modes, and how is the selection made?

Yes, the 71V2546S150PFG8 supports both linear and interleaved 4-word burst sequences. Selection is controlled by the LBO (Linear/Interleaved Burst Order) pin: tying LBO to VSS configures linear order (0,1,2,3), while tying it to VDD selects interleaved order (0,2,1,3). This hardware-based configuration avoids software overhead and ensures deterministic burst behavior aligned with standard cache line or DMA engine expectations.

What are the power supply requirements for the 71V2546S150PFG8, and why are separate VDD and VDDQ rails used?

The 71V2546S150PFG8 requires two independent supplies: 3.3V ±5% on VDD for core logic and 2.5V ±5% on VDDQ for I/O buffers. This separation isolates noise-sensitive core circuitry from I/O switching transients and enables direct interfacing with 2.5V FPGA or ASIC I/O banks. The dual-rail design also allows independent power sequencing and improves signal integrity in mixed-voltage systems.

How does the ADV/LD pin function in burst mode operation of the 71V2546S150PFG8?

The ADV/LD pin serves a dual role in the 71V2546S150PFG8: when LOW, it loads a new external address into the internal address latch; when HIGH, it advances the on-chip 4-word burst counter. This allows seamless transition between random-address initialization and sequential burst access without external address generation logic. The burst counter wraps automatically after four words, enabling continuous streaming from a single address setup.

Is the 71V2546S150PFG8 compatible with industrial temperature environments, and what qualification standards apply?

Yes, the 71V2546S150PFG8 is fully qualified for industrial temperature operation from –40°C to +85°C. It meets JEDEC JESD22-A108 reliability standards for temperature cycling and high-temperature operating life. The device is manufactured in a high-reliability CMOS process and packaged in a lead-free, RoHS-compliant TQFP-100, making it suitable for deployment in base stations, factory automation controllers, and outdoor telecom infrastructure.