Renesas 71V2556S100PFG8
- Part No.:
- 71V2556S100PFG8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
71V2556S100PFG8.pdf
- Description:
- IC SRAM 4.5MBIT PARALLEL 100TQFP
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
71V2556S100PFG8 from IDT (now Renesas) is a 3.3V synchronous ZBT™ SRAM with 128K × 36-bit organization (4.5 Mbit), 166 MHz operation (3.5 ns clock-to-data access), pipelined outputs, and zero-bus-turnaround architecture. It supports 4-word linear/interleaved burst reads/writes, individual byte write control (BW1–BW4), and operates across industrial temperature (–40°C to +85°C) in a 100-pin TQFP package - deployed in high-speed network packet buffers and telecom line-card memory subsystems.
For engineers reviewing the 71V2556S100PFG8 datasheet, 71V2556S100PFG8 pinout, 71V2556S100PFG8 application, or 71V2556S100PFG8 equivalent, key selection considerations include its ZBT timing behavior, 2.5V I/O supply compatibility, burst counter control via ADV/LD and LBO, and JEDEC-standard TQFP-100 mechanical footprint for board-level integration.
Technical Context
The 71V2556S100PFG8 implements a fully synchronous, clock-edge-triggered architecture with input registers for address, data, and control signals, enabling deterministic pipelined operation. Its internal burst counter advances on ADV/LD = HIGH and loads external addresses on ADV/LD = LOW, supporting both linear and interleaved sequences selected by the LBO pin.
It features three chip enables (CE1, CE2, CE2) for depth expansion, a single R/W pin, and internally synchronized OE elimination - removing external timing constraints on output enable. Clock Enable (CEN) suspends all synchronous logic while preserving register state, and optional IEEE 1149.1 JTAG (not implemented in "S" version) supports boundary-scan testability.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.5 Mbit); provides 36-bit wide data path for parallel bus architectures. |
| Max Clock Frequency | 166 MHz; enables 6 ns cycle time for sustained high-throughput read/write operations. |
| Clock-to-Data Access | 3.5 ns (typical); defines minimum latency from CLK edge to valid output data, critical for tight-timing systems. |
| Supply Voltages | VDD = 3.3 V ±5%, VDDQ = 2.5 V; separates core logic and I/O domains for noise isolation and compatibility with 2.5V interfaces. |
| Burst Capability | 4-word burst (linear or interleaved); reduces address overhead and improves bandwidth efficiency in sequential access patterns. |
| Operating Temperature | –40°C to +85°C (industrial grade); validated for deployment in base station, industrial controller, and networking equipment environments. |
| Package | JEDEC-standard 100-pin TQFP (14 mm × 20 mm); surface-mount compatible with standard reflow profiles and automated assembly. |
Pinout & Package
71V2556S100PFG8 is packaged in a 100-pin plastic thin quad flatpack (TQFP), JEDEC MO-145 compliant, with 0.5 mm pitch and 14 mm × 20 mm body size. Pin 1 is located at top-left corner (marking dot adjacent), and pin numbering proceeds counterclockwise.
| Pin | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address Inputs | 17-bit address bus; A0–A16 decode 128K locations (217 = 131,072); synchronous sampling on rising CLK edge. |
| CLK | Primary Clock Input | Positive-edge-triggered master clock; all synchronous inputs and outputs referenced to this edge; CEN gates clock propagation. |
| R/W | Read/Write Control | Single bidirectional control: HIGH = read, LOW = write; determines burst cycle direction at first address load. |
| ADV/LD | Burst Counter Control | LOW = load external address into counter; HIGH = increment internal burst counter; defines burst sequence start and progression. |
| LBO | Burst Order Select | Connect to VSS for linear burst (0,1,2,3), VDD for interleaved (0,2,1,3); sets memory access pattern without software intervention. |
| BW1–BW4 | Byte Write Enables | Active-LOW per-byte write masks; each controls one 9-bit byte (I/O[0:31] + I/OP[1:4]); allows partial writes without read-modify-write. |
| CE1, CE2, CE2 | Chip Enables | Three independent enables; device selected only when CE1=L, CE2=L, CE2=H; supports multi-chip depth expansion with minimal glue logic. |
| CEN | Clock Enable | Asynchronous active-HIGH; halts clock propagation while preserving register state - enables low-power idle without reset or reinitialization. |
| I/O[0:31], I/OP[1:4] | Data I/O Bus | 36-bit bidirectional data path (32 data + 4 parity); 2.5V I/O voltage domain; tri-stated automatically on deselect or write initiation. |
| VDD, VDDQ, VSS | Power Supplies | VDD = 3.3V core logic; VDDQ = 2.5V I/O drivers; multiple VDD/VDDQ/VSS pins distributed for low-noise power delivery and signal integrity. |
Key Features
| Feature | Design Value |
|---|---|
| ZBT™ Zero Bus Turnaround | Eliminates dead cycles between read and write bursts - enables back-to-back memory transactions without bus idle time. |
| Pipelined Output Registers | Output data registered on CLK edge; decouples output timing from internal array access, improving setup margin for downstream logic. |
| Internally Synchronized OE | No external OE timing control required - output enable is derived synchronously from internal control logic, simplifying system timing. |
| Individual Byte Write Control | BW1–BW4 allow selective 9-bit byte writes; avoids full-word overwrites and preserves unmodified data in same word location. |
| Three Chip Enables | Enables seamless depth expansion (e.g., 128K×72 or 256K×36) using standard CE gating - no address decoding logic needed. |
| Industrial Temperature Range | Validated operation from –40°C to +85°C; qualified for use in carrier-grade telecom infrastructure and ruggedized industrial controllers. |
Applications
| Network Packet Buffer | Telecom Line Card Memory |
|---|---|
|
Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in switching ASICs with strict latency budgets. IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM buffer interfacing directly to packet processor's 36-bit parallel bus; ZBT mode enables immediate read-after-write for header modification. Use Value: 3.5 ns clock-to-data access and zero-bus-turnaround reduce packet processing latency by up to 25% versus asynchronous or standard sync SRAMs. |
Use Scenario: Frame buffering in SONET/SDH OC-48 line cards requiring burst-mode access for ATM cell assembly/disassembly. IC Role / Device Role / Timing Role: Burst-capable memory staging point between framer and DSP; ADV/LD and LBO configure linear burst for contiguous cell payloads. Use Value: 4-word burst with pipelined outputs sustains >1.2 GB/s effective bandwidth - matching OC-48 line rate (2.488 Gbps) with 50% bus utilization. |
| Baseband Processor Cache | Ruggedized Industrial Controller |
|
Use Scenario: Instruction/data cache for FPGA-based LTE baseband processors handling real-time FFT and channel estimation. IC Role / Device Role / Timing Role: Low-jitter, deterministic-access memory co-located with soft-core processor; CEN enables dynamic clock gating during idle cycles. Use Value: 166 MHz operation and 2.5V I/O interface ensure timing closure with 28 nm FPGA I/O banks while minimizing crosstalk and EMI. |
Use Scenario: Real-time motion control buffer in CNC machines where memory must operate reliably under thermal cycling and EMI stress. IC Role / Device Role / Timing Role: Industrial-grade SRAM storing position trajectory tables and servo loop coefficients; VDD/VDDQ separation isolates logic noise from analog-sensitive I/O. Use Value: –40°C to +85°C qualification and robust TQFP packaging ensure >10-year field life in unventilated enclosures with ambient swings. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1356BV18-167BZC | 128K × 36, 1.8V core / 1.8V I/O, 167 MHz, 3.3 ns tAA; no ZBT mode - uses conventional sync protocol with OE-controlled outputs. | Requires external OE management and suffers bus turnaround penalty; better suited for cost-sensitive, lower-power embedded systems than high-throughput telecom. | Select if 1.8V supply ecosystem is mandatory and ZBT timing is not required; verify OE timing budget in system-level timing analysis. |
| AS7C33128PFS-10BIN | 128K × 36, 3.3V-only supply (no VDDQ split), 10 ns tAA, 100 MHz max; asynchronous OE, no burst counter or ADV/LD logic. | Lacks pipelining, burst capability, and ZBT - limited to simpler, lower-speed control-plane memory applications. | Choose only for legacy designs where pinout compatibility is secondary and performance headroom is ample; not suitable for packet-buffering roles. |
Compared with CY7C1356BV18-167BZC and AS7C33128PFS-10BIN, the 71V2556S100PFG8 delivers superior throughput via ZBT architecture and burst pipelining, but requires dual-supply design and precise ADV/LD sequencing - making it optimal for latency-critical telecom infrastructure rather than general-purpose buffering.
Availability
71V2556S100PFG8 is available at Aetrix Electronics and suitable for network packet buffers, telecom line-card memory, baseband processor caches, and ruggedized industrial controllers requiring stable component supply, long-lifecycle support, and industrial-temperature reliability.
Supply support for 71V2556S100PFG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory interface, and RF solutions for communications and computing markets.
The 71V2556S100PFG8 belongs to IDT's ZBT™ SRAM product line, engineered specifically for zero-latency bus turnaround in high-speed packet-switching, base station, and real-time signal processing systems demanding deterministic memory access.
FAQ
What is the function of the ADV/LD pin on the 71V2556S100PFG8?
The ADV/LD pin on the 71V2556S100PFG8 controls the internal burst counter: when ADV/LD is LOW, it loads an external address into the counter; when HIGH, it increments the counter to generate the next burst address. This enables efficient 4-word burst access without repeated address bus updates, and the 71V2556S100PFG8 relies on this pin for both linear and interleaved burst modes depending on LBO state.
Does the 71V2556S100PFG8 support JTAG boundary scan?
No, the 71V2556S100PFG8 does not support JTAG boundary scan. The "S" suffix denotes the standard version without IEEE 1149.1 functionality; JTAG is only available on the "SA" variant (e.g., 71V2556SA). Pins TMS, TDI, TCK, TDO, and TRST are NC (no connect) on the 71V2556S100PFG8 and must be left unconnected or tied to appropriate voltage levels per datasheet guidance.
How does the ZBT™ feature improve system performance in the 71V2556S100PFG8?
The ZBT™ (Zero Bus Turnaround) feature in the 71V2556S100PFG8 eliminates dead cycles between consecutive read and write operations - allowing immediate transition from one to the other without bus idle time. This increases effective memory bandwidth by up to 30% in mixed-access workloads, and the 71V2556S100PFG8 achieves this through internal pipeline synchronization and dedicated burst counter logic, not external timing control.
What are the voltage requirements for VDD and VDDQ on the 71V2556S100PFG8?
The 71V2556S100PFG8 requires VDD = 3.3 V ±5% for core logic and VDDQ = 2.5 V for I/O drivers. These supplies are separate and must be independently decoupled; VDDQ may not exceed 2.625 V or drop below 2.375 V, and VDD must remain within 3.135–3.465 V. Exceeding these ranges risks timing violations or latch-up, and the 71V2556S100PFG8 specifies no operational guarantee outside these limits.
Can the 71V2556S100PFG8 operate in linear burst mode only?
No, the 71V2556S100PFG8 supports both linear and interleaved burst modes. The LBO (Linear/Interleaved Burst Order) pin selects the sequence: tied to VSS for linear (0,1,2,3), or to VDD for interleaved (0,2,1,3). This selection is static per power-on cycle and directly affects how the internal burst counter increments, and the 71V2556S100PFG8's functional timing diagrams confirm distinct address sequences for each mode.
71V2556S100PFG8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 100-LQFP
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 100 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x14)
71V2556S100PFG8 FAQ
1.How can I place an order for 71V2556S100PFG8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V2556S100PFG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V2556S100PFG8 reliable?
The price and inventory of 71V2556S100PFG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V2556S100PFG8 is usually 5 days.
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Once your 71V2556S100PFG8 order is processed, you will receive an email with the shipment details and tracking number.
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5.How can I obtain technical support or documentation for 71V2556S100PFG8?
For technical support, including 71V2556S100PFG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V2556S100PFG8 requirements.
6.How does Aetrix verify that 71V2556S100PFG8 is sourced from the original manufacturer or authorized distributors?
All 71V2556S100PFG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V2556S100PFG8 meets industry standards.
7.What is the process for return or replacement of 71V2556S100PFG8?
All 71V2556S100PFG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V2556S100PFG8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V2556S100PFG8 part is unused and in its original packaging.
Return procedure for 71V2556S100PFG8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V2556S100PFG8 Tags

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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology

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AT21CS01-STUM10-T
Microchip Technology

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AT24C02C-SSHM-T
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
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AT24CS02-SSHM-T
Microchip Technology

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93LC46BT-I/OT
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AT24C04C-SSHM-T
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24LC01BT-I/SN
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24AA02UIDT-I/OT
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AT24C08C-STUM-T
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