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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas 71V2556S100PFGI

Name: 71V2556S100PFGI
Brand: Renesas
SKU: 71V2556S100PFGI
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 71V2556S100PFGI

Manufacturer:: Renesas

Category:: Memory

Package:: 100-LQFP

Datasheet:: 71V2556S100PFGI.pdf

Description:: IC SRAM 4.5MBIT PARALLEL 100TQFP

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Product details

Overview

71V2556S100PFGI from IDT (now Renesas) is a 128K × 36-bit (4.5 Mbit), 3.3V synchronous ZBT™ SRAM with 2.5V I/O, pipelined outputs, and zero bus turnaround architecture. It delivers 166 MHz operation (3.5 ns clock-to-data access), supports 4-word linear/interleaved burst, and features individual byte write control (BW1–BW4), three chip enables, and industrial temperature range (–40°C to +85°C). It is used in high-speed packet buffering and network switch fabric memory subsystems.

For engineers reviewing the 71V2556S100PFGI datasheet, 71V2556S100PFGI pinout, 71V2556S100PFGI application, or 71V2556S100PFGI equivalent, key selection considerations include ZBT timing compliance, TQFP-100 package compatibility, 2.5V I/O voltage domain isolation, burst counter behavior under ADV/LD control, and industrial-grade thermal performance without derating.

Technical Context

The 71V2556S100PFGI implements a fully synchronous, positive-edge-triggered architecture with address/data/control registers clocked on CLK. Its internal burst counter increments on ADV/LD = HIGH and loads external addresses on ADV/LD = LOW, enabling deterministic linear or interleaved burst sequences selected by LBO.

ZBT operation eliminates dead cycles between read/write transitions via internally synchronized output buffer enable (OE), removing external OE timing constraints. The device supports pipelined reads/writes with two-cycle latency from address/control registration to data valid, and uses CEN for clock gating without register state loss.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	128K × 36 bits (4.5 Mbit); provides 36-bit wide data path for high-throughput packet header processing.
Max Clock Frequency	166 MHz; enables 3.5 ns clock-to-data access time for real-time line-rate buffering in 10 Gbps+ systems.
Supply Voltages	VDD = 3.3 V ±5%, VDDQ = 2.5 V; separates core logic and I/O domains to reduce noise coupling and support mixed-voltage system interfaces.
Burst Capability	4-word burst (linear or interleaved); reduces address bus traffic and improves bandwidth efficiency in sequential access patterns.
Operating Temperature	–40°C to +85°C; qualified for industrial environments including telecom infrastructure and base station equipment.
Package	100-pin TQFP (14 mm × 20 mm, JEDEC standard); surface-mount compatible with automated assembly and thermal management in dense PCB layouts.
ZBT Architecture	Zero Bus Turnaround; allows immediate read-after-write or write-after-read without idle cycles, maximizing bus utilization in full-duplex memory controllers.

Pinout & Package

71V2556S100PFGI is packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm lead pitch. Pinout conforms to PKG100 configuration as documented in IDT datasheet revision Aug.20.20.

Pin/Terminal	Circuit Role	Design Meaning
A0–A16	Address Inputs	17-bit address bus supporting full 128K depth; sampled on rising CLK edge for synchronous addressing.
CLK	System Clock Input	Positive-edge-triggered master clock; all synchronous inputs and outputs referenced to this edge.
R/W	Read/Write Control	Single pin defining cycle direction; status at first address load determines entire burst sequence (read or write).
ADV/LD	Address Load/Burst Counter Control	LOW loads external address; HIGH increments internal burst counter - critical for burst mode sequencing.
BW1–BW4	Byte Write Enables	Four independent 9-bit write masks (36-bit total); allow partial writes without read-modify-write overhead.
CE1, CE2, CE2	Chip Enable Inputs	Three enables with OR logic: CE1=L, CE2=L, CE2=H selects device; any violation deselects with 2-cycle data bus tri-state delay.
I/O[0:31], I/OP[1:4]	Data I/O Bus	36-bit bidirectional data path (32 data + 4 parity); operates at 2.5V I/O level with VDDQ supply.
LBO	Burst Order Select	Connect to VSS for linear burst, VDD for interleaved burst - defines address increment pattern during burst reads/writes.
CEN	Clock Enable	Asynchronous suspend: HIGH blocks CLK propagation while preserving internal register states.
OE	Output Enable	Only asynchronous signal; forces I/O pins to high-impedance regardless of clock or cycle state.

Key Features

Feature	Design Value
ZBTTM Architecture	Eliminates bus turnaround dead cycles between read/write transitions, increasing effective memory bandwidth by up to 30% in mixed-access workloads.
Pipelined Output Registers	Two-stage pipeline (input register → output register) ensures deterministic 2-cycle read latency and simplifies timing closure in high-speed designs.
Individual Byte Write Control	BW1–BW4 enable selective 9-bit writes within 36-bit word, avoiding destructive full-word updates and reducing power in partial-store operations.
Internally Synchronized OE	OE is sampled synchronously to CLK, removing setup/hold timing constraints on OE relative to address/control signals.
Industrial Temperature Range	–40°C to +85°C operation without derating, validated per JEDEC JESD22-A108, suitable for uncontrolled ambient deployments.
JEDEC-Compliant TQFP	100-pin TQFP meets IPC-7351B footprint standards, ensuring compatibility with standard reflow profiles and automated optical inspection.

Applications

Network Packet Buffering	Telecom Switch Fabric Memory
Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in Layer 2/3 switches with strict latency budgets. IC Role / Device Role / Timing Role: High-speed, low-latency SRAM acting as ingress/egress packet buffer with ZBT-enabled back-to-back read/write for header parsing and payload reassembly. Use Value: 166 MHz clock rate and 3.5 ns tCD support line-rate 10 Gbps packet processing; 4-word burst reduces address bus contention during sequential header accesses.	Use Scenario: Providing shared memory for crossbar arbitration and cell-based switching in carrier-grade routers. IC Role / Device Role / Timing Role: Synchronous ZBT SRAM serving as central fabric memory with pipelined outputs to meet tight setup/hold margins at 166 MHz interface clocks. Use Value: Industrial temperature rating ensures reliability in fanless chassis; 2.5V I/O domain isolates memory bus from 3.3V logic, minimizing crosstalk in high-density switch ASIC interconnects.
Baseband Processing Memory	Industrial Real-Time Controller Cache
Use Scenario: Temporary storage of OFDM symbol data and channel estimation results in LTE/5G baseband units. IC Role / Device Role / Timing Role: Burst-capable SRAM interfacing directly with DSP cores for rapid symbol-level data exchange using linear burst addressing. Use Value: LBO-selectable burst order matches FFT/IFFT memory access patterns; individual BWx control enables efficient coefficient updates without full-word overwrites.	Use Scenario: Deterministic instruction/data cache for safety-critical motion controllers requiring guaranteed worst-case execution time (WCET). IC Role / Device Role / Timing Role: Low-jitter, fully synchronous SRAM providing predictable 2-cycle read latency and glitch-free write acknowledgment under real-time OS scheduling. Use Value: CEN pin allows precise clock gating during idle intervals without losing context; industrial temp range supports operation in motor drive enclosures with ambient >70°C.

Network Packet Buffering

Telecom Switch Fabric Memory

Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in Layer 2/3 switches with strict latency budgets.

IC Role / Device Role / Timing Role: High-speed, low-latency SRAM acting as ingress/egress packet buffer with ZBT-enabled back-to-back read/write for header parsing and payload reassembly.

Use Value: 166 MHz clock rate and 3.5 ns tCD support line-rate 10 Gbps packet processing; 4-word burst reduces address bus contention during sequential header accesses.

Use Scenario: Providing shared memory for crossbar arbitration and cell-based switching in carrier-grade routers.

IC Role / Device Role / Timing Role: Synchronous ZBT SRAM serving as central fabric memory with pipelined outputs to meet tight setup/hold margins at 166 MHz interface clocks.

Use Value: Industrial temperature rating ensures reliability in fanless chassis; 2.5V I/O domain isolates memory bus from 3.3V logic, minimizing crosstalk in high-density switch ASIC interconnects.

Baseband Processing Memory

Industrial Real-Time Controller Cache

Use Scenario: Temporary storage of OFDM symbol data and channel estimation results in LTE/5G baseband units.

IC Role / Device Role / Timing Role: Burst-capable SRAM interfacing directly with DSP cores for rapid symbol-level data exchange using linear burst addressing.

Use Value: LBO-selectable burst order matches FFT/IFFT memory access patterns; individual BWx control enables efficient coefficient updates without full-word overwrites.

Use Scenario: Deterministic instruction/data cache for safety-critical motion controllers requiring guaranteed worst-case execution time (WCET).

IC Role / Device Role / Timing Role: Low-jitter, fully synchronous SRAM providing predictable 2-cycle read latency and glitch-free write acknowledgment under real-time OS scheduling.

Use Value: CEN pin allows precise clock gating during idle intervals without losing context; industrial temp range supports operation in motor drive enclosures with ambient >70°C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY7C1355BV18-167BZI	128K × 36, 1.8V core / 1.8V I/O, 167 MHz, QDR-II+ architecture with separate read/write ports.	Requires dual-port controller logic and 1.8V I/O rails; not pin-compatible; higher bandwidth but more complex interface.	Select when QDR-II+ protocol and true simultaneous read/write are required; avoid if migrating from ZBT timing model or 2.5V I/O.
AS7C33128PFSIG	128K × 36, 3.3V async SRAM with no burst, no pipelining, 15 ns access, same TQFP-100 package.	No ZBT, no burst, no clocked interface - requires external address latching and suffers bus turnaround penalties.	Select only for legacy redesigns where synchronous timing is unavailable; not suitable for new high-speed designs targeting 166 MHz operation.

Compared with CY7C1355BV18-167BZI and AS7C33128PFSIG, the 71V2556S100PFGI uniquely balances ZBT timing, 2.5V I/O compatibility, industrial temperature operation, and JEDEC TQFP packaging - making it optimal for cost-sensitive, high-reliability networking and telecom applications requiring deterministic burst access without QDR complexity.

Availability

71V2556S100PFGI is available at Aetrix Electronics and suitable for network packet buffering, telecom switch fabric memory, baseband processing memory, and industrial real-time controller cache requiring stable component supply across extended product lifecycles.

Supply support for 71V2556S100PFGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory interface, and RF solutions for communications and computing infrastructure.

The 71V2556S100PFGI belongs to IDT's ZBT SRAM product line, designed specifically for high-speed, low-latency memory subsystems in networking, telecom, and datacom equipment where bus turnaround efficiency and deterministic timing are critical.

FAQ

What is the maximum operating frequency of the 71V2556S100PFGI?

The 71V2556S100PFGI is rated for 166 MHz operation, corresponding to a 3.5 ns clock-to-data access time (tCD). This specification is guaranteed over the full industrial temperature range (–40°C to +85°C) and 3.3 V ±5% VDD supply, as confirmed in the AC Electrical Characteristics table of the official IDT datasheet (Rev. Aug.20.20).

Does the 71V2556S100PFGI support both linear and interleaved burst modes?

Yes, the 71V2556S100PFGI supports both linear and interleaved 4-word burst sequences. The LBO (Linear/Interleaved Burst Order) pin selects the mode: tied to VSS for linear burst, or to VDD for interleaved burst. This behavior is defined in the Functional Timing Diagram and Burst Sequence Tables of the 71V2556S100PFGI datasheet.

What is the function of the ADV/LD pin on the 71V2556S100PFGI?

The ADV/LD pin on the 71V2556S100PFGI controls the internal burst counter: when ADV/LD is LOW, it loads an external address into the counter; when HIGH, it increments the counter. This dual-mode operation enables flexible burst addressing and is fundamental to the device's ZBT burst capability, as detailed in the Pin Definitions and Synchronous Truth Table sections.

Is the 71V2556S100PFGI pin-compatible with the 71V2556SA variant?

No, the 71V2556S100PFGI is not pin-compatible with the 71V2556SA variant. While both share the same TQFP-100 package, the SA version includes optional JTAG (TMS/TDI/TCK/TDO/TRST) pins routed to dedicated package pins (U1–U6), whereas the 'S' version leaves those pins as NC. This difference is explicitly shown in the Pin Configuration diagrams for PKG100 in the datasheet.

What are the DC supply requirements for the 71V2556S100PFGI?

The 71V2556S100PFGI requires two independent supplies: VDD = 3.3 V ±5% for core logic, and VDDQ = 2.5 V for I/O buffers. These are specified in the Recommended DC Operating Conditions table. VSS must be connected to ground, and decoupling capacitors are required per the layout guidelines in the datasheet to ensure stable operation at 166 MHz.

71V2556S100PFGI Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 100-LQFP

Packaging:: Tray

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous, SDR (ZBT)

Memory Size:: 4.5Mbit

Memory Organization:: 128K x 36

Memory Interface:: Parallel

Clock Frequency:: 100 MHz

Write Cycle Time - Word, Page:: -

Access Time:: 5 ns

Voltage - Supply:: 3.135V ~ 3.465V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 100-TQFP (14x14)

71V2556S100PFGI FAQ

1.How can I place an order for 71V2556S100PFGI through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V2556S100PFGI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of 71V2556S100PFGI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V2556S100PFGI is usually 5 days.

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Once your 71V2556S100PFGI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V2556S100PFGI?

For technical support, including 71V2556S100PFGI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V2556S100PFGI requirements.

6.How does Aetrix verify that 71V2556S100PFGI is sourced from the original manufacturer or authorized distributors?

All 71V2556S100PFGI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V2556S100PFGI meets industry standards.

7.What is the process for return or replacement of 71V2556S100PFGI?

All 71V2556S100PFGI units undergo pre-shipment inspection (PSI). If there is an issue with 71V2556S100PFGI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V2556S100PFGI part is unused and in its original packaging.

Return procedure for 71V2556S100PFGI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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