Renesas 71V2556S133PFG
- Part No.:
- 71V2556S133PFG
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
71V2556S133PFG.pdf
- Description:
- IC SRAM 4.5MBIT PARALLEL 100TQFP
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
71V2556S133PFG from IDT (now Renesas) is a 128K × 36-bit (4.5 Mbit), 3.3V synchronous ZBT™ SRAM with 2.5V I/O, pipelined outputs, and zero-bus-turnaround architecture. It delivers 133 MHz operation (7.5 ns clock-to-data access), supports 4-word linear/interleaved burst modes via internal counter, and features individual byte write (BW1–BW4), three chip enables (CE1/CE2/CE2), and optional IEEE 1149.1 JTAG for boundary scan. It is used in high-speed packet buffering and cache subsystems in telecom switching fabric.
For engineers reviewing the 71V2556S133PFG datasheet, 71V2556S133PFG pinout, 71V2556S133PFG application, or 71V2556S133PFG equivalent, key selection criteria include ZBT timing compliance, TQFP-100 package compatibility, 3.3V core / 2.5V I/O voltage separation, industrial temperature support (–40°C to +85°C), and burst-mode control via ADV/LD and LBO pins.
Technical Context
The 71V2556S133PFG implements a fully synchronous, positive-edge-triggered architecture with address, data, and control registers clocked on CLK. Its ZBT™ mode eliminates dead cycles between read/write transitions by overlapping bus turnaround with next-cycle setup, enabled by pipelined output buffers and internally synchronized OE.
It integrates a 4-word burst counter that increments on ADV/LD = HIGH; LBO selects linear or interleaved addressing. The device supports depth expansion via CE1/CE2/CE2 logic and individual byte write masking-critical for partial-word updates in network buffer management without read-modify-write overhead.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36 bits (4.5 Mbit); supports 36-bit parallel data path for wide-bus applications like switch fabric line cards. |
| Max Clock Frequency | 133 MHz; enables 7.5 ns clock-to-data access time, meeting strict latency budgets in real-time packet processing. |
| Supply Voltages | VDD = 3.3 V ±5% (core), VDDQ = 2.5 V ±10% (I/O); decoupled power domains reduce noise coupling and support mixed-voltage system integration. |
| Burst Capability | 4-word linear or interleaved burst; reduces address bus traffic and improves throughput in sequential-access scenarios like FIFO emulation. |
| Operating Temperature | –40°C to +85°C; qualified for industrial-grade deployment in base station equipment and ruggedized networking hardware. |
| Package | 100-pin TQFP (14 mm × 20 mm, JEDEC standard); surface-mount compatible with automated assembly and thermal performance suitable for convection-cooled modules. |
| ZBT™ Functionality | No dead cycles between read/write transitions; eliminates bus idle time, enabling continuous back-to-back memory transactions in pipelined architectures. |
Pinout & Package
71V2556S133PFG is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm lead pitch. Pin 1 is marked by a dot or beveled corner per standard orientation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address Inputs | 17-bit address bus; accesses full 128K-depth array; sampled on rising CLK edge with setup/hold timing referenced to CLK. |
| CLK | System Clock Input | Positive-edge-triggered master clock; all synchronous inputs (address, R/W, BWx, ADV/LD, CEN, CE1/CE2/CE2) are registered on this edge. |
| R/W | Read/Write Control | Single bidirectional control; determines transaction direction at burst initiation; ignored during counter increment (ADV/LD = HIGH). |
| ADV/LD | Address Load/Burst Counter Advance | LOW loads external address; HIGH increments internal burst counter; defines burst sequence start point and step behavior. |
| LBO | Burst Order Select | Connect to VSS for linear burst (0,1,2,3), VDD for interleaved (0,2,1,3); sets memory access pattern without software intervention. |
| BW1–BW4 | Byte Write Enables | Active-Low per-byte masks for 36-bit data bus (I/O[0:31] + I/OP[1:4]); enable selective 8/9-bit writes without read-modify-write cycles. |
| CE1, CE2, CE2 | Chip Enable Inputs | Three independent enables; chip activates only when CE1 = L, CE2 = L, CE2 = H; supports depth expansion with minimal glue logic. |
| CEN | Clock Enable | Asynchronous suspend: HIGH blocks CLK propagation, holds register state, and maintains output drive until resumed. |
| OE | Output Enable | Asynchronous active-low control; forces I/O pins to high-impedance regardless of CLK or transaction state. |
| I/O[0:31], I/OP[1:4] | Data I/O Bus | 36-bit bidirectional data path; VDDQ-referenced (2.5 V), with separate VDD/VSS for core logic; supports concurrent read/write in ZBT mode. |
| VDD, VDDQ, VSS | Power Supplies | VDD = 3.3 V core supply; VDDQ = 2.5 V I/O supply; VSS = common ground; multiple dedicated pins ensure low-impedance return paths. |
Key Features
| Feature | Design Value |
|---|---|
| ZBTTM Zero Bus Turnaround | Eliminates idle cycles between consecutive read/write operations, enabling sustained 133 MHz throughput without bus arbitration stalls. |
| Pipelined Output Buffers | Internally synchronized OE removes need for external timing control; outputs update precisely two clocks after address/control registration. |
| 4-Word Burst Counter | Hardware-based counter reduces address bus bandwidth by 75% for sequential access; LBO pin selects linear or interleaved order. |
| Individual Byte Write Control | BW1–BW4 allow independent 8/9-bit writes to any portion of the 36-bit bus, avoiding destructive read-modify-write sequences. |
| Three Chip Enables | CE1/CE2/CE2 support hierarchical memory mapping and seamless depth expansion across multiple devices with shared address/data buses. |
| Optional JTAG Boundary Scan | IEEE 1149.1-compliant TAP controller (TMS/TDI/TCK/TDO/TRST) enables in-system testability and interconnect verification. |
Applications
| Telecom Switching Fabric | Network Packet Buffering |
|---|---|
|
Use Scenario: High-speed line card in carrier-grade Ethernet switch performing cut-through forwarding with deep packet buffering. IC Role / Device Role / Timing Role: Acts as primary 36-bit-wide packet memory buffer; accepts ingress frames at wire rate and releases egress frames with sub-10 ns latency jitter. Use Value: ZBT™ mode enables back-to-back read/write bursts without dead cycles, sustaining full 133 MHz throughput across variable packet sizes. |
Use Scenario: Buffering layer in 10Gbps+ optical transport equipment handling asynchronous client-side traffic aggregation. IC Role / Device Role / Timing Role: Serves as elastic store between deserializer and scheduler; absorbs timing skew using burst-mode reads/writes aligned to frame boundaries. Use Value: 4-word burst capability and ADV/LD-controlled counter reduce address bus activity by 75%, simplifying timing closure in multi-GHz clock domains. |
| Industrial PLC Data Logging | Avionics Data Acquisition |
|
Use Scenario: Real-time data logger in programmable logic controller capturing sensor streams at 1 kHz with deterministic timestamping. IC Role / Device Role / Timing Role: Provides nonvolatile-backed fast buffer; stores transient measurements before flash write; operates in industrial temperature range. Use Value: Industrial temp rating (–40°C to +85°C) and robust TQFP packaging ensure reliability in uncontrolled cabinet environments. |
Use Scenario: Sensor fusion module in flight control computer acquiring synchronized analog-to-digital samples from inertial measurement units. IC Role / Device Role / Timing Role: Holds time-critical ADC sample bursts prior to DSP processing; uses byte-write enables to tag metadata alongside raw data. Use Value: Individual BW1–BW4 control allows atomic tagging of 8-bit status flags within 36-bit data words, eliminating race conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1355BV133BZC | 128K × 36-bit, 3.3V core / 2.5V I/O, 133 MHz, but uses QCC-100 package (not TQFP); lacks JTAG option. | Same ZBT timing and burst functionality, but different mechanical footprint and no boundary scan support. | Select when JTAG testability is not required and QCC-100 layout is already established. |
| AS7C3256P-133JC | 128K × 36-bit, 3.3V-only I/O (no VDDQ separation), 133 MHz, TQFP-100 package; no burst counter or ADV/LD logic. | Requires external burst sequencing logic; higher I/O noise due to shared VDD; no LBO or byte-write flexibility. | Select only for cost-sensitive designs where burst control and I/O voltage isolation are unnecessary. |
Compared with CY7C1355BV133BZC and AS7C3256P-133JC, the 71V2556S133PFG uniquely combines TQFP-100 packaging, integrated burst counter with LBO select, and optional JTAG - making it the only choice for space-constrained, testable, and burst-optimized industrial telecom systems.
Availability
71V2556S133PFG is available at Aetrix Electronics and suitable for telecom switching fabric, network packet buffering, and industrial PLC data logging requiring stable component supply, long-term lifecycle assurance, and industrial temperature qualification.
Supply support for 71V2556S133PFG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory, and interface solutions for communications and computing infrastructure.
The 71V2556S133PFG belongs to IDT's ZBT™ SRAM product line, designed specifically for zero-latency, high-throughput memory subsystems in telecom, networking, and real-time embedded systems demanding deterministic burst access and industrial reliability.
FAQ
What is the maximum operating frequency of the 71V2556S133PFG?
The 71V2556S133PFG is rated for 133 MHz operation, delivering a 7.5 ns clock-to-data access time under specified VDD = 3.3 V ±5%, VDDQ = 2.5 V ±10%, and industrial temperature conditions. This frequency is guaranteed across the full –40°C to +85°C range with appropriate board-level signal integrity design.
Does the 71V2556S133PFG support burst mode, and how is it controlled?
Yes, the 71V2556S133PFG supports 4-word linear or interleaved burst mode via an on-chip counter. Burst behavior is controlled by the ADV/LD pin (LOW loads address, HIGH advances counter) and LBO pin (VSS = linear, VDD = interleaved). No external logic is needed to generate burst addresses.
What is the function of the BW1–BW4 pins on the 71V2556S133PFG?
The BW1–BW4 pins are active-low byte write enables for the 36-bit data bus (I/O[0:31] + I/OP[1:4]). They allow independent 8/9-bit writes to specific portions of the bus, enabling partial-word updates without read-modify-write cycles - critical for efficient metadata tagging and protocol header manipulation.
Is JTAG boundary scan supported on the 71V2556S133PFG?
No - the 71V2556S133PFG does not include JTAG. JTAG is only available on the "SA" variant (e.g., 71V2556SA). The "S" suffix indicates the standard version without IEEE 1149.1 test logic; TMS/TDI/TCK/TDO/TRST pins are NC on the 71V2556S133PFG.
What power supply requirements must be met for reliable operation of the 71V2556S133PFG?
The 71V2556S133PFG requires two independent supplies: VDD = 3.3 V ±5% for core logic and VDDQ = 2.5 V ±10% for I/O drivers. VSS must be a clean, low-impedance ground. Decoupling capacitors (0.1 µF ceramic + 4.7 µF tantalum per supply) are mandatory near each VDD/VDDQ pin pair.
71V2556S133PFG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 100-LQFP
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 133 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 4.2 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x14)
71V2556S133PFG FAQ
1.How can I place an order for 71V2556S133PFG through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V2556S133PFG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V2556S133PFG reliable?
The price and inventory of 71V2556S133PFG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V2556S133PFG is usually 5 days.
3.What payment methods are accepted for 71V2556S133PFG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V2556S133PFG transactions.
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4.How is shipping managed for 71V2556S133PFG?
71V2556S133PFG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V2556S133PFG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V2556S133PFG?
For technical support, including 71V2556S133PFG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V2556S133PFG requirements.
6.How does Aetrix verify that 71V2556S133PFG is sourced from the original manufacturer or authorized distributors?
All 71V2556S133PFG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V2556S133PFG meets industry standards.
7.What is the process for return or replacement of 71V2556S133PFG?
All 71V2556S133PFG units undergo pre-shipment inspection (PSI). If there is an issue with 71V2556S133PFG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V2556S133PFG part is unused and in its original packaging.
Return procedure for 71V2556S133PFG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V2556S133PFG Tags

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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology

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AT21CS01-STUM10-T
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AT24C02C-SSHM-T
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24LC01BT-I/OT
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M24C02-FMC6TG
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AT24CS02-SSHM-T
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93LC46BT-I/OT
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AT24C04C-SSHM-T
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24LC01BT-I/SN
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24AA02UIDT-I/OT
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AT24C08C-STUM-T
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