Renesas 71V2556S133PFGI
- Part No.:
- 71V2556S133PFGI
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
71V2556S133PFGI.pdf
- Description:
- IC SRAM 4.5MBIT PARALLEL 100TQFP
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
71V2556S133PFGI from IDT (now Renesas) is a 3.3V synchronous ZBT™ SRAM with 128K × 36-bit organization (4.5 Mbit), 133 MHz operation (7.5 ns clock-to-data access), pipelined outputs, and zero-bus-turnaround architecture for high-throughput memory subsystems in network packet buffers and telecom line cards.
For engineers reviewing the 71V2556S133PFGI datasheet, 71V2556S133PFGI pinout, 71V2556S133PFGI application, or 71V2556S133PFGI equivalent, key selection criteria include burst mode support (linear/interleaved), individual byte write control (BW1–BW4), 2.5V I/O voltage compatibility, industrial temperature range (–40°C to +85°C), and JEDEC-standard 100-pin TQFP packaging.
Technical Context
The 71V2556S133PFGI implements a fully synchronous, clock-edge-triggered interface with address, data, and control registers aligned to the rising edge of CLK. Its internal burst counter enables 4-word bursts per address load, selected via LBO pin for linear or interleaved sequences.
ZBT™ operation eliminates dead cycles between read/write transitions by overlapping bus turnaround with valid data transfer; OE is internally synchronized, removing external timing constraints on output enable. CEN provides clock gating for power management without register state loss.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.5 Mbit); supports depth expansion via three chip enables (CE1, CE2, CE2). |
| Max Clock Frequency | 133 MHz; enables 7.5 ns clock-to-data access time for real-time packet buffering. |
| I/O Voltage | 2.5V VDDQ supply; decouples I/O signaling from core 3.3V VDD, enabling mixed-voltage system interfacing. |
| Burst Capability | 4-word burst (linear or interleaved); reduces address bus traffic and improves bandwidth efficiency. |
| Operating Temperature | –40°C to +85°C industrial range; qualified for base station, router, and industrial control environments. |
| Package | JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm footprint. |
| Write Control | Individual byte write enables BW1–BW4; allows granular 8-bit writes without masking logic. |
Pinout & Package
71V2556S133PFGI is packaged in a 100-pin TQFP (PKG100) with 0.5 mm pitch, compliant with JEDEC MO-147. Pin 64 supports ZZ (sleep mode) on latest die revision; pins 14, 16, and 66 require ≥VIH but not direct VDD connection.
| Pin | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address Input | 17-bit address bus; latched on rising CLK edge for 128K-depth addressing. |
| CLK | System Clock Input | Rising-edge-triggered master clock; synchronizes all address, control, and data transfers. |
| R/W | Read/Write Control | Single pin determines cycle direction; status at first address load defines entire burst sequence. |
| ADV/LD | Address Load/Burst Counter Advance | Low = load external address; High = increment internal burst counter for next word. |
| BW1–BW4 | Byte Write Enables | Active-low controls for I/O[0:7], [8:15], [16:23], [24:31]; enables partial writes without external logic. |
| CE1, CE2, CE2 | Chip Enable Inputs | Three independent enables; device selected only when CE1=L, CE2=L, CE2=H - simplifies depth expansion. |
| LBO | Burst Order Select | Low = linear burst (A0,A1,A2,A3); High = interleaved (A0,A2,A1,A3) - matches cache line patterns. |
| I/O[0:31], I/OP[1:4] | Data I/O Bus | 36-bit bidirectional bus (32 data + 4 parity); operates at 2.5V VDDQ for low-noise signaling. |
| VDD, VDDQ, VSS | Power Supplies | VDD = 3.3V ±5% core; VDDQ = 2.5V I/O; VSS = common ground - requires separate decoupling. |
Key Features
| Feature | Design Value |
|---|---|
| ZBT™ Zero Bus Turnaround | Eliminates idle cycles between read/write transitions, enabling back-to-back memory operations at full clock rate. |
| Pipelined Output Registers | Internally registers output data, removing need for external OE timing control and simplifying system timing closure. |
| 4-Word Burst Mode | Reduces address bus activity by 75% per burst; supports both linear and interleaved sequences for cache coherence. |
| Individual Byte Write Control | Four dedicated BWx pins allow selective 8-bit writes - avoids full-word read-modify-write overhead in embedded systems. |
| Industrial Temperature Range | Rated for –40°C to +85°C operation; validated for telecom infrastructure and industrial automation deployments. |
Applications
| Network Packet Buffering | Telecom Line Card Memory |
|---|---|
Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in switching ASICs. IC Role / Device Role / Timing Role: High-speed, low-latency buffer with zero-turnaround writes to absorb bursty ingress traffic. Use Value: 133 MHz sustained throughput and 4-word burst reduce latency jitter and increase switch fabric utilization. |
Use Scenario: Frame buffering in OC-192/STM-64 SONET/SDH line interface units. IC Role / Device Role / Timing Role: Synchronous SRAM providing deterministic access for ATM cell reassembly and pointer processing. Use Value: Pipelined outputs and 2.5V I/O ensure signal integrity at multi-Gbps serial rates with minimal timing margin risk. |
| Base Station Baseband Processing | Industrial PLC Data Logging |
Use Scenario: Temporary storage of IQ samples during digital predistortion (DPD) in 4G/5G RF transceivers. IC Role / Device Role / Timing Role: Low-access-latency memory supporting real-time FIR filtering and feedback loop execution. Use Value: 7.5 ns clock-to-data and industrial temp rating enable reliable operation in thermally constrained RF modules. |
Use Scenario: Cyclic data acquisition and timestamped event logging in programmable logic controllers. IC Role / Device Role / Timing Role: Nonvolatile-buffered SRAM holding process variables and alarm history during brownout conditions. Use Value: Individual byte write (BW1–BW4) minimizes power per write; ZZ sleep mode reduces standby current to <5 µA. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1356BV133BZC | 128K × 36-bit, 133 MHz, 3.3V core / 2.5V I/O, same TQFP-100 package; no JTAG option. | Identical burst and ZBT functionality; lacks optional IEEE 1149.1 boundary scan for production testability. | Preferred where JTAG is unnecessary and Cypress supply chain alignment is required. |
| AS7C3256B-133JCIN | 128K × 36-bit, 133 MHz, 3.3V-only I/O (no VDDQ separation); TQFP-100, industrial temp. | Higher I/O voltage (3.3V) limits interoperability with 2.5V logic; no ZZ sleep mode or LBO burst selection. | Consider only if system uses uniform 3.3V signaling and burst flexibility is not required. |
Compared with CY7C1356BV133BZC and AS7C3256B-133JCIN, the 71V2556S133PFGI uniquely combines 2.5V I/O isolation, ZZ sleep mode, and selectable burst order - critical for power-constrained, mixed-voltage telecom designs requiring testability and thermal robustness.
Availability
71V2556S133PFGI is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, base station baseband processing, and industrial PLC data logging requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for 71V2556S133PFGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology), now part of Renesas Electronics, specializes in high-performance timing, memory, and interface solutions for communications and computing infrastructure.
The 71V2556S133PFGI belongs to IDT's ZBT™ SRAM product line, engineered specifically for zero-latency, high-bandwidth memory subsystems in networking ASICs, telecom line cards, and real-time signal processing platforms.
FAQ
What is the maximum operating frequency of the 71V2556S133PFGI?
The 71V2556S133PFGI is rated for 133 MHz operation, delivering a guaranteed 7.5 ns clock-to-data access time under industrial temperature and voltage conditions. This frequency supports sustained high-throughput data buffering in telecom and networking equipment where deterministic latency is critical. The 71V2556S133PFGI achieves this using fully pipelined synchronous architecture with edge-triggered registers.
Does the 71V2556S133PFGI support burst mode, and how is it configured?
Yes, the 71V2556S133PFGI supports 4-word burst mode with selectable linear or interleaved sequencing. Configuration is controlled by the LBO (Linear/Interleaved Burst Order) pin: LBO = VSS selects linear order (A0, A1, A2, A3), while LBO = VDD selects interleaved (A0, A2, A1, A3). The ADV/LD pin loads the initial address or advances the internal burst counter. This capability is integral to the 71V2556S133PFGI's role in cache-coherent and packet-processing systems.
What is the purpose of the ZZ (sleep) mode in the 71V2556S133PFGI?
The ZZ (sleep) mode in the 71V2556S133PFGI reduces standby current to less than 5 µA by placing the device in a low-power state while retaining memory contents. Pin 64 serves as the ZZ input on the latest die revision and must be driven high to enter sleep mode. This feature is essential for energy-sensitive applications like remote base stations and battery-backed industrial controllers where the 71V2556S133PFGI operates intermittently.
How does the 71V2556S133PFGI handle byte-level write operations?
The 71V2556S133PFGI provides four dedicated byte write enable inputs - BW1 through BW4 - each controlling an 8-bit segment of the 32-bit data bus (I/O[0:7], [8:15], [16:23], [24:31]). When asserted low, the corresponding byte is written; others remain unchanged. This eliminates the need for external read-modify-write circuitry and is a core feature of the 71V2556S133PFGI's design for efficient partial-word updates in protocol stacks and control registers.
Is the 71V2556S133PFGI compatible with JTAG boundary scan testing?
The 71V2556S133PFGI includes optional IEEE 1149.1 JTAG boundary scan support, implemented via dedicated pins (TMS, TDI, TCK, TDO, TRST) that are NC on the "S" version but functional on the "SA" variant. For the 71V2556S133PFGI specifically, JTAG is not enabled - those pins are no-connect. This distinguishes it from the SA variant and confirms the 71V2556S133PFGI's focus on cost-optimized, non-test-intensive applications.
71V2556S133PFGI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 100-LQFP
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 133 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 4.2 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x14)
71V2556S133PFGI FAQ
1.How can I place an order for 71V2556S133PFGI through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V2556S133PFGI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V2556S133PFGI reliable?
The price and inventory of 71V2556S133PFGI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V2556S133PFGI is usually 5 days.
3.What payment methods are accepted for 71V2556S133PFGI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V2556S133PFGI transactions.
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4.How is shipping managed for 71V2556S133PFGI?
71V2556S133PFGI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V2556S133PFGI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V2556S133PFGI?
For technical support, including 71V2556S133PFGI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V2556S133PFGI requirements.
6.How does Aetrix verify that 71V2556S133PFGI is sourced from the original manufacturer or authorized distributors?
All 71V2556S133PFGI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V2556S133PFGI meets industry standards.
7.What is the process for return or replacement of 71V2556S133PFGI?
All 71V2556S133PFGI units undergo pre-shipment inspection (PSI). If there is an issue with 71V2556S133PFGI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V2556S133PFGI part is unused and in its original packaging.
Return procedure for 71V2556S133PFGI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V2556S133PFGI Tags

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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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24LC01BT-I/OT
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M24C02-FMC6TG
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AT24CS02-SSHM-T
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93LC46BT-I/OT
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AT24C04C-SSHM-T
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24LC01BT-I/SN
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24AA02UIDT-I/OT
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AT24C08C-STUM-T
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