Renesas 71V2556S133PFGI8

Overview

71V2556S133PFGI8 from IDT (now Renesas) is a 128K × 36-bit, 4.5 Mbit synchronous ZBT™ SRAM with pipelined outputs, 3.3 V core supply, 2.5 V I/O supply, and 133 MHz operation (7.5 ns clock-to-data access). It features zero bus turnaround, individual byte write control (BW1–BW4), and supports linear/interleaved 4-word burst modes for high-throughput memory subsystems in network packet buffers and cache controllers.

For engineers reviewing the 71V2556S133PFGI8 datasheet, 71V2556S133PFGI8 pinout, 71V2556S133PFGI8 application, or 71V2556S133PFGI8 equivalent, key selection criteria include ZBT™ architecture compatibility, TQFP-100 package footprint, industrial temperature range (–40°C to +85°C), and support for burst counter and pipelined read/write cycles without dead cycles.

Technical Context

The 71V2556S133PFGI8 implements a fully synchronous, clock-edge-triggered interface with address, data, and control registers sampled on the positive clock edge. Its internal burst counter enables automatic address incrementing during burst operations, controlled by ADV/LD and LBO pins for linear or interleaved sequences.

ZBT™ operation eliminates bus turnaround latency: a write cycle can be immediately followed by a read cycle (or vice versa) without tri-state delays, enabled by internally synchronized output buffer enable and pipelined output registers. The device uses three chip enables (CE1, CE2, CE2) for flexible depth expansion and supports optional IEEE 1149.1 JTAG boundary scan.

Key Specifications

Pinout & Package

Packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body size, with 0.5 mm pitch. Pin 1 marked via corner notch or dot; top-side marking includes part number and date code.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with 71V2556SA133PFGI8, the 71V2556S133PFGI8 omits JTAG but retains full ZBT™ functionality and industrial temp rating; versus CY7C1355BV133BZC, it uses simpler single-ended clock and shared I/O, easing integration in legacy synchronous bus designs.

Availability

71V2556S133PFGI8 is available at Aetrix Electronics and suitable for network packet buffering, cache controller memory, and industrial motion control applications requiring stable component supply, long-term lifecycle support, and industrial temperature qualification.

Supply support for 71V2556S133PFGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance memory, timing, and interface solutions for communications and computing markets.

The 71V2556S133PFGI8 belongs to IDT's ZBT™ SRAM product line, designed specifically for zero-latency, high-throughput memory subsystems in networking, telecom, and real-time embedded systems demanding deterministic access and burst efficiency.

FAQ

What is the maximum operating frequency of the 71V2556S133PFGI8?

The 71V2556S133PFGI8 is rated for a maximum clock frequency of 133 MHz, corresponding to a 7.5 ns clock cycle time. This specification is guaranteed across the full industrial temperature range (–40°C to +85°C) and under recommended supply conditions (VDD = 3.3 V ±5%, VDDQ = 2.5 V ±5%). Performance is validated per AC electrical characteristics in the official datasheet.

Does the 71V2556S133PFGI8 support burst mode, and how is it configured?

Yes, the 71V2556S133PFGI8 supports 4-word burst mode using an internal counter. Burst order (linear or interleaved) is selected via the LBO pin: tie to VSS for linear, VDD for interleaved. The ADV/LD pin controls counter behavior-low loads an external address, high increments the counter. Burst operation requires R/W state to be established at the first cycle.

What is the function of the ZZ pin on the 71V2556S133PFGI8?

The ZZ pin (Pin 64) on the 71V2556S133PFGI8 enables deep power-down (sleep) mode when asserted low. In this state, core and I/O leakage currents are minimized (<100 µA typical), while retaining memory contents. This feature is supported on the latest die revision and is distinct from standard standby modes controlled by CEN or chip enables.

Is the 71V2556S133PFGI8 pin-compatible with the 71V2556SA133PFGI8?

Yes, the 71V2556S133PFGI8 and 71V2556SA133PFGI8 share identical pinout, package (TQFP-100), timing, and DC specifications. The SA variant adds optional JTAG (TMS/TDI/TCK/TDO/TRST) functionality on otherwise NC pins, but these are unused and electrically benign in the 'S' version. No PCB change is required for substitution if JTAG is not needed.

What voltage supplies does the 71V2556S133PFGI8 require, and how are they decoupled?

The 71V2556S133PFGI8 requires two supplies: VDD = 3.3 V ±5% for core logic and VDDQ = 2.5 V ±5% for I/O drivers. Multiple dedicated VDD, VDDQ, and VSS pins (e.g., Pins 15, 20, 41, 46, 53, 58, 61, 69, 74, 80, 85, 90, 95, 99) enable localized high-frequency decoupling. Use 0.1 µF ceramic capacitors near each VDD/VDDQ pair and bulk capacitance (e.g., 10 µF tantalum) on each supply rail.