Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Renesas 71V2556S150PFG8

Part No.:
71V2556S150PFG8
Manufacturer:
Renesas
Category:
Memory
Package:
100-LQFP
Datasheet:
Aetrix71V2556S150PFG8.pdf
Description:
IC SRAM 4.5MBIT PARALLEL 100TQFP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,037

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

71V2556S150PFG8 from IDT (now Renesas) is a 3.3V synchronous ZBT™ SRAM with 128K × 36-bit organization (4.5 Mbit), 150 MHz operation (6.67 ns cycle time), pipelined outputs, and zero-bus-turnaround architecture. It features 2.5V I/O supply (VDDQ), individual byte write control (BW1–BW4), and supports linear/interleaved 4-word burst modes - deployed in high-speed network packet buffers and cache subsystems.

For engineers reviewing the 71V2556S150PFG8 datasheet, 71V2556S150PFG8 pinout, 71V2556S150PFG8 application, or 71V2556S150PFG8 equivalent, key selection criteria include ZBT timing compliance, TQFP-100 package compatibility, industrial temperature support (–40°C to +85°C), and JTAG testability (IEEE 1149.1 optional).

Technical Context

The 71V2556S150PFG8 implements a fully synchronous, clock-edge-triggered interface with address/data/control registers latched on the positive CLK edge. Its internal burst counter and ADV/LD-controlled address loading enable deterministic 4-word burst sequences without external logic.

ZBT operation eliminates dead cycles between read/write transitions via internally synchronized OE and pipelined output registers. The device uses three chip enables (CE1, CE2, CE2) for depth expansion and supports sleep mode via ZZ pin (pin 64, latest die revision).

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization 128K × 36-bit (4.5 Mbit); supports 36-bit data path for wide-bus applications like network ASIC interfaces.
Clock Frequency 150 MHz (6.67 ns cycle time); guarantees full-speed operation under industrial temperature (–40°C to +85°C) and 3.3V ±5% VDD.
Access Time 3.5 ns clock-to-data (tCD) at 166 MHz; actual 150 MHz part delivers sub-7 ns cycle timing with pipelined output staging.
I/O Voltage 2.5V VDDQ supply; isolates I/O power domain from core 3.3V VDD, enabling mixed-voltage system integration.
Burst Mode 4-word linear or interleaved burst (LBO-selectable); reduces address bus overhead and improves sustained bandwidth in streaming workloads.
Package JEDEC-standard 100-pin TQFP (14 mm × 20 mm); surface-mount compatible with standard reflow profiles and IPC-7351B land pattern.
Temperature Range Industrial grade (–40°C to +85°C); qualified per AEC-Q200 stress tests for rugged embedded and telecom infrastructure use.

Pinout & Package

Packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch, lead-free (RoHS-compliant) finish.

Pin/Terminal Circuit Role Design Meaning
A0–A16 Address Input 17-bit address bus; selects one of 128K locations; sampled on rising CLK edge with setup/hold timing referenced to CLK.
CLK System Clock Input Positive-edge-triggered master clock; all synchronous inputs (address, control, data) registered on this edge.
R/W Read/Write Control Single bidirectional control; determines cycle direction at burst start; ignored during internal counter advancement.
ADV/LD Address Load/Burst Advance Low = load external address; High = increment internal burst counter; defines burst sequence initiation point.
BW1–BW4 Byte Write Enable Four independent 9-bit write masks; each controls one 9-bit byte lane (I/O[0:8], [9:17], [18:26], [27:35]); active-low.
CE1, CE2, CE2 Chip Enable Inputs Three enables for depth expansion; device selected only when CE1=L, CE2=L, CE2=H; deselect tri-states bus in 2 cycles.
I/O[0:31], I/OP[1:4] Data I/O Bus 32 data bits + 4 parity bits; bidirectional; driven by pipelined output register; supports 36-bit ECC-capable transfers.
VDD, VDDQ, VSS Power Supply VDD = 3.3V core supply (±5%); VDDQ = 2.5V I/O supply (±5%); VSS = common ground; decoupling required per JEDEC layout guidelines.
LBO Burst Order Select Linear (LBO=VSS) or interleaved (LBO=VDD) burst sequence; sets address increment pattern for 4-word burst.
ZZ (pin 64) Deep Sleep Mode Active-low sleep enable (latest die revision); reduces standby current to <10 µA; requires VDDQ ramp before exit.

Key Features

Feature Design Value
ZBT™ Architecture Eliminates bus turnaround dead cycles between reads and writes - enables back-to-back transactions at full clock rate.
Pipelined Output Buffer Internally synchronized OE removes need for external OE timing control; output valid after fixed tCD delay from CLK.
4-Word Burst Counter On-chip counter generates sequential addresses for burst; reduces address bus activity and simplifies controller logic.
Individual Byte Write Four BW pins allow selective 9-bit byte writes without masking logic; critical for partial-word updates in packet processing.
JTAG Boundary Scan Optional IEEE 1149.1 interface (TMS/TDI/TCK/TDO/TRST) supports production test and board-level debug on BGA variants.
Industrial Temperature Support Qualified from –40°C to +85°C; meets thermal requirements for base station, router, and industrial automation deployments.

Applications

Network Packet Buffer High-Speed Cache Controller

Use Scenario: Storing ingress/egress Ethernet or SONET frames in Layer 2/3 switches and routers.

IC Role / Device Role / Timing Role: Primary packet memory buffer interfacing directly to MAC or switch fabric; operates at 150 MHz with zero-cycle turnaround.

Use Value: Enables line-rate forwarding of 10 Gbps+ traffic by sustaining >500 MB/s burst bandwidth with deterministic latency.

Use Scenario: Serving as L2 cache tag/data RAM in FPGA-based compute accelerators or protocol offload engines.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency scratchpad memory co-located with custom logic; accessed via pipelined AXI or Avalon-MM bridge.

Use Value: Delivers 5.4 GB/s peak bandwidth (150 MHz × 36-bit) with no wait states, accelerating cache hit rates in real-time DSP pipelines.

Telecom Line Card Memory Industrial PLC Data Log Buffer

Use Scenario: Buffering TDM voice channels and signaling data in carrier-grade DSLAMs and OLTs.

IC Role / Device Role / Timing Role: Synchronous frame buffer synchronized to T1/E1 clock domains; uses burst mode for channelized data packing.

Use Value: Supports 256+ concurrent voice streams with jitter-free buffering via deterministic 4-word burst access and industrial temp stability.

Use Scenario: Capturing sensor timestamps and process variables in programmable logic controllers with deterministic logging.

IC Role / Device Role / Timing Role: Nonvolatile-backed SRAM buffer holding last 10k samples; accessed via microcontroller's parallel bus with CE-controlled depth expansion.

Use Value: Guarantees data integrity across power cycles using ZZ sleep mode (<10 µA) and survives extended industrial thermal cycling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C1356BV18 128K × 18-bit, 166 MHz, 1.8V core/I/O; no ZBT, no burst counter; LVCMOS interface. Requires two devices for 36-bit width; lacks zero-turnaround and burst addressing - increases controller complexity. Choose when lower voltage (1.8V) and smaller density suffice; avoid for ZBT-critical or burst-dependent designs.
AS7C31026B 128K × 32-bit, 150 MHz, 3.3V, async interface; no clock, no burst, no pipelining. Asynchronous access introduces variable latency; no burst capability limits streaming throughput; no CE2/CE2 depth expansion. Acceptable for cost-sensitive, non-real-time buffering; unsuitable for deterministic high-throughput systems requiring ZBT timing.

Compared with CY7C1356BV18 and AS7C31026B, the 71V2556S150PFG8 uniquely delivers 36-bit ZBT operation with integrated burst counter and industrial temperature support - essential for telecom and networking equipment where bus efficiency and thermal reliability are non-negotiable.

Availability

71V2556S150PFG8 is available at Aetrix Electronics and suitable for network packet buffers, high-speed cache controllers, telecom line cards, and industrial PLC data log buffers requiring stable component supply across long product lifecycles.

Supply support for 71V2556S150PFG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory, and interface solutions for communications and computing infrastructure.

The 71V2556S150PFG8 belongs to IDT's ZBT SRAM product line, designed specifically for zero-latency, high-bandwidth memory subsystems in packet-switched networks, baseband processors, and real-time embedded control systems.

FAQ

What is the maximum operating frequency of the 71V2556S150PFG8?

The 71V2556S150PFG8 is rated for 150 MHz operation (6.67 ns cycle time) across the full industrial temperature range (–40°C to +85°C) with 3.3V ±5% VDD and 2.5V ±5% VDDQ. Its 3.5 ns clock-to-data access time is specified at 166 MHz but guaranteed only under commercial conditions; the '150' in the part number denotes its industrial-grade speed grade.

Does the 71V2556S150PFG8 support JTAG boundary scan?

The 71V2556S150PFG8 does not include JTAG functionality. JTAG (TMS/TDI/TCK/TDO/TRST) is supported only on the 'SA' variant (e.g., 71V2556SA), not on the 'S' version. Pin assignments for JTAG signals on the TQFP package are NC (no connect) for the 71V2556S150PFG8.

What is the function of the ZZ pin on the 71V2556S150PFG8?

Pin 64 (ZZ) on the 71V2556S150PFG8 enables deep sleep mode: when asserted low, it reduces standby current to <10 µA. This feature is supported on the latest die revision. During ZZ mode, the device retains memory contents but disables clocks and I/O drivers; VDDQ must be stable before exiting sleep.

How many chip enable signals does the 71V2556S150PFG8 have, and how are they used?

The 71V2556S150PFG8 has three chip enable inputs: CE1, CE2, and CE2. The device is selected only when CE1 = L, CE2 = L, and CE2 = H. Any deviation (e.g., CE2 = L) deselects the part, tri-stating the data bus within two clock cycles - enabling seamless depth expansion in multi-SRAM systems.

What burst modes does the 71V2556S150PFG8 support, and how is burst order selected?

The 71V2556S150PFG8 supports both linear and interleaved 4-word burst modes. The LBO (pin 48) input selects the sequence: LBO = VSS enables linear burst (A0, A1, A2, A3); LBO = VDD enables interleaved burst (A0, A2, A1, A3). Burst behavior is defined at the start of each transaction and cannot be changed mid-burst.

71V2556S150PFG8 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
100-LQFP
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR (ZBT)
Memory Size:
4.5Mbit
Memory Organization:
128K x 36
Memory Interface:
Parallel
Clock Frequency:
150 MHz
Write Cycle Time - Word, Page:
-
Access Time:
3.8 ns
Voltage - Supply:
3.135V ~ 3.465V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
100-TQFP (14x14)

71V2556S150PFG8 FAQ

1.How can I place an order for 71V2556S150PFG8 through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V2556S150PFG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V2556S150PFG8 reliable?

The price and inventory of 71V2556S150PFG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V2556S150PFG8 is usually 5 days.

3.What payment methods are accepted for 71V2556S150PFG8?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V2556S150PFG8 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 71V2556S150PFG8?

71V2556S150PFG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V2556S150PFG8 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V2556S150PFG8?

For technical support, including 71V2556S150PFG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V2556S150PFG8 requirements.

6.How does Aetrix verify that 71V2556S150PFG8 is sourced from the original manufacturer or authorized distributors?

All 71V2556S150PFG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V2556S150PFG8 meets industry standards.

7.What is the process for return or replacement of 71V2556S150PFG8?

All 71V2556S150PFG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V2556S150PFG8, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V2556S150PFG8 part is unused and in its original packaging.

Return procedure for 71V2556S150PFG8:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

71V2556S150PFG8 Tags

  • 71V2556S150PFG8
  • 71V2556S150PFG8 PDF
  • 71V2556S150PFG8 Datasheet
  • 71V2556S150PFG8 Specifications
  • 71V2556S150PFG8 Images
  • Renesas
  • Renesas 71V2556S150PFG8
  • Buy 71V2556S150PFG8
  • 71V2556S150PFG8 Price
  • 71V2556S150PFG8 Distributor
  • 71V2556S150PFG8 Supplier
  • 71V2556S150PFG8 Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER