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Renesas 71V2556SA100BG

Part No.:
71V2556SA100BG
Manufacturer:
Renesas
Category:
Memory
Package:
119-BGA
Datasheet:
Aetrix71V2556SA100BG.pdf
Description:
IC SRAM 4.5MBIT PAR 119PBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,188

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Product details

Overview

71V2556SA100BG from IDT (now Renesas) is a 128K × 36-bit (4.5 Mbit), 3.3V synchronous ZBT™ SRAM with pipelined outputs, 2.5V I/O supply, and zero bus turnaround architecture. It delivers 166 MHz operation (3.5 ns clock-to-data access), supports 4-word linear/interleaved burst modes via ADV/LD and LBO control, and features individual byte write (BW1–BW4), three chip enables (CE1/CE2/CE2), and optional IEEE 1149.1 JTAG boundary scan. It is used in high-speed packet buffering and cache coherency applications in telecom switching fabric.

For engineers reviewing the 71V2556SA100BG datasheet, 71V2556SA100BG pinout, 71V2556SA100BG application, or 71V2556SA100BG equivalent, key selection considerations include its ZBT™ zero-bus-turnaround timing for back-to-back read/write cycles, 100-pin TQFP package compatibility, industrial temperature support (–40°C to +85°C), and dual-supply operation (3.3V core / 2.5V I/O).

Technical Context

The 71V2556SA100BG implements a fully synchronous, clock-edge-triggered architecture with address, data, and control registers sampled on the positive clock edge. Its internal burst counter enables single-address-initiated 4-word transfers, with sequence order (linear or interleaved) selected by the LBO pin.

It integrates pipelined output registers and an internally synchronized OE function-eliminating external OE timing constraints-and supports depth expansion via three independent chip enables. The SA variant includes optional JTAG (TMS/TDI/TCK/TDO/TRST) compliant with IEEE 1149.1, and supports sleep mode via ZZ (pin 64, BGA T7) for power reduction during idle periods.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization 128K × 36 bits (4.5 Mbit); provides 36-bit wide data path for high-throughput buffer applications.
Max Clock Frequency 166 MHz; enables 3.5 ns clock-to-data access time for real-time packet processing pipelines.
Supply Voltages VDD = 3.3 V ±5% (core), VDDQ = 2.5 V ±5% (I/O); decoupled supplies reduce noise coupling between logic and data buses.
Burst Capability 4-word burst (linear or interleaved); reduces address bus traffic and improves bandwidth efficiency in sequential access patterns.
Operating Temperature –40°C to +85°C (industrial grade); qualified for deployment in base station, router, and industrial control environments.
Package 100-pin TQFP (14 mm × 20 mm, JEDEC standard); surface-mount compatible with automated assembly and thermal management.
ZBT™ Architecture Zero Bus Turnaround; eliminates dead cycles between read and write operations, enabling continuous bus utilization in full-duplex memory systems.

Pinout & Package

71V2556SA100BG is packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body size, with 0.5 mm lead pitch. Pin 1 is located at top-left corner (marked by dot or bevel), and pin numbering proceeds counterclockwise.

Pin Circuit Role Design Meaning
A0–A16 Address Inputs 17-bit address bus; selects one of 128K locations; latched on rising CLK edge.
CLK Input Clock Positive-edge-triggered master clock; synchronizes all address, control, and data register updates.
R/W Read/Write Control Single bidirectional control signal; determines cycle direction at burst initiation (ignored during counter increment).
ADV/LD Address Load/Burst Counter Advance Low = load external address; High = increment internal burst counter; defines burst start and sequence progression.
LBO Linear/Interleaved Burst Order Select Connected to VSS for linear burst (0,1,2,3); to VDD for interleaved (0,2,1,3); sets memory access pattern for cache line fills.
BW1–BW4 Byte Write Enables Four independent 9-bit write masks; enable selective writing to I/O[0:31] + I/OP[1:4] without affecting other bytes.
CE1, CE2, CE2 Chip Enable Inputs Three enables allow hierarchical depth expansion; device deselected if any is deasserted while ADV/LD = Low.
OE Output Enable Asynchronous active-low control; tri-states outputs independently of clock for flexible bus sharing.
CEN Clock Enable Asynchronous clock gate; halts internal timing when high, preserving register state without clock toggling.
I/O[0:31], I/OP[1:4] Data I/O Bus 36-bit bidirectional data interface; operates at 2.5V I/O voltage; supports concurrent read/write in ZBT™ mode.
VDD, VDDQ, VSS Power Supplies VDD (3.3V core), VDDQ (2.5V I/O), VSS (ground); separate supplies isolate switching noise and optimize signal integrity.
TMS, TDI, TCK, TDO, TRST JTAG Boundary Scan Interface IEEE 1149.1-compliant test interface; enables in-system testing and debug; TRST is optional asynchronous reset.
ZZ Deep Sleep Mode Control Active-low input (pin 64); places device in low-power standby (<10 µA ICC), retaining data; requires VDD stable.

Key Features

Feature Design Value
ZBTTM Zero Bus Turnaround Enables immediate read-after-write or write-after-read transitions without bus idle cycles, increasing effective bandwidth by up to 30% in burst-intensive systems.
Pipelined Output Registers Two-stage output pipeline (input register → output register) ensures deterministic 3.5 ns clock-to-data timing across process/voltage/temperature corners.
Individual Byte Write Control BW1–BW4 allow per-byte masking of 36-bit writes, eliminating need for read-modify-write sequences in partial-word updates.
On-Chip Burst Counter Hardware counter increments automatically on ADV/LD = High, enabling single-address burst initiation and reducing address bus overhead.
Three Chip Enables CE1, CE2, CE2 provide flexible depth expansion control; supports multi-chip memory modules without external decode logic.
Optional JTAG Boundary Scan Full IEEE 1149.1 compliance (TMS/TDI/TCK/TDO/TRST) enables production testability and board-level diagnostics without dedicated test pads.

Applications

Telecom Packet Buffering Network Switch Fabric Cache

Use Scenario: Storing ingress/egress packet headers and metadata in high-port-density Ethernet switches operating at 10 Gbps+ line rates.

IC Role / Device Role / Timing Role: High-speed, low-latency buffer providing 36-bit parallel access to support simultaneous header lookup and payload staging.

Use Value: ZBT™ architecture eliminates bus turnaround delay, enabling sustained 166 MHz throughput for real-time packet classification and forwarding.

Use Scenario: Serving as shared cache for distributed forwarding engines in modular chassis-based routers with multiple line cards.

IC Role / Device Role / Timing Role: Synchronous SRAM acting as coherent cache tag/data store with burst reads aligned to 64-byte cache lines.

Use Value: 4-word burst capability and pipelined outputs reduce average access latency to <4 ns, improving cache hit resolution speed.

Industrial PLC Data Logging Medical Imaging Frame Buffer

Use Scenario: Capturing time-stamped sensor inputs and control outputs in deterministic real-time PLCs requiring microsecond-level I/O response.

IC Role / Device Role / Timing Role: Local high-speed scratchpad memory for cyclic process data exchange between CPU and I/O modules.

Use Value: Industrial temperature rating (–40°C to +85°C) and robust 3.3V/2.5V supply design ensure reliable operation in harsh factory environments.

Use Scenario: Temporary storage of uncompressed DICOM image frames (e.g., 1024×1024×16-bit) during CT/MRI acquisition and preprocessing.

IC Role / Device Role / Timing Role: Dual-port-capable buffer supporting concurrent write-in (acquisition) and read-out (processing/display) paths.

Use Value: Individual byte write (BW1–BW4) allows efficient partial-frame updates without disturbing adjacent pixel data, minimizing memory bandwidth waste.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C1356BV18-167BZI 128K × 36, 1.8V core / 1.8V I/O, 167 MHz, no JTAG, different pinout (119-ball BGA only) Lower voltage operation suits portable/battery-powered systems; lacks ZZ sleep mode and TQFP option Choose for ultra-low-power designs where 1.8V compatibility and BGA footprint are acceptable.
AS7C3256A-10JIN 128K × 32, 3.3V, 10 ns async access, no burst, no ZBT, no JTAG, SOJ-44 package Asynchronous interface limits throughput; narrower 32-bit bus; suitable only for legacy control-plane buffers Consider only for cost-sensitive, non-real-time applications where ZBT timing and burst are unnecessary.

Compared with CY7C1356BV18-167BZI and AS7C3256A-10JIN, the 71V2556SA100BG uniquely combines ZBT™ zero-turnaround timing, industrial temperature range, JTAG testability, and TQFP packaging-making it optimal for telecom infrastructure and deterministic embedded systems requiring both performance and manufacturability.

Availability

71V2556SA100BG is available at Aetrix Electronics and suitable for telecom switching fabric, industrial PLC data logging, and medical imaging frame buffering requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant green packaging.

Supply support for 71V2556SA100BG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory interface, and RF solutions for communications and computing markets.

The 71V2556SA100BG belongs to IDT's ZBT™ SRAM product line, engineered specifically for zero-latency bus turnaround in high-speed networking and real-time control systems where deterministic memory access is critical.

FAQ

What is the maximum operating frequency of the 71V2556SA100BG?

The 71V2556SA100BG is rated for a maximum clock frequency of 166 MHz, corresponding to a 3.5 ns clock-to-data access time under specified conditions (VDD = 3.3 V ±5%, VDDQ = 2.5 V ±5%, TA = –40°C to +85°C). This timing is guaranteed across the full industrial temperature range and supports sustained burst-mode operation without derating.

Does the 71V2556SA100BG support both linear and interleaved burst modes?

Yes, the 71V2556SA100BG supports both linear and interleaved 4-word burst sequences. The LBO (Linear/Interleaved Burst Order) pin selects the mode: tied to VSS for linear (0,1,2,3) and to VDD for interleaved (0,2,1,3). This flexibility allows optimization for cache line alignment or memory controller addressing schemes without firmware changes.

What is the purpose of the ZZ pin on the 71V2556SA100BG?

The ZZ pin on the 71V2556SA100BG enables deep sleep mode. When asserted low, it places the device into a low-power standby state drawing less than 10 µA ICC while retaining stored data. This feature is essential for power-constrained applications like remote base stations or portable diagnostic equipment where intermittent operation is required.

Is JTAG boundary scan functionality standard on the 71V2556SA100BG?

Yes, the "SA" suffix in 71V2556SA100BG explicitly denotes inclusion of IEEE 1149.1-compliant JTAG boundary scan. Pins TMS, TDI, TCK, TDO, and optional TRST are functional and documented in the pinout. This enables in-circuit test, system-level debug, and manufacturing verification without requiring additional test fixtures.

How does the 71V2556SA100BG handle read/write transitions without bus dead cycles?

The 71V2556SA100BG implements ZBTTM (Zero Bus Turnaround) architecture, which uses internal pipelining and synchronized control to eliminate idle cycles between consecutive read and write operations. The device internally manages bus direction and timing, allowing back-to-back cycles with no gap-achieving continuous 166 MHz throughput in mixed-access workloads typical of packet buffering.

71V2556SA100BG Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
119-BGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR (ZBT)
Memory Size:
4.5Mbit
Memory Organization:
128K x 36
Memory Interface:
Parallel
Clock Frequency:
100 MHz
Write Cycle Time - Word, Page:
-
Access Time:
5 ns
Voltage - Supply:
3.135V ~ 3.465V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
119-PBGA (14x22)

71V2556SA100BG FAQ

1.How can I place an order for 71V2556SA100BG through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V2556SA100BG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V2556SA100BG reliable?

The price and inventory of 71V2556SA100BG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V2556SA100BG is usually 5 days.

3.What payment methods are accepted for 71V2556SA100BG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V2556SA100BG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 71V2556SA100BG?

71V2556SA100BG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V2556SA100BG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V2556SA100BG?

For technical support, including 71V2556SA100BG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V2556SA100BG requirements.

6.How does Aetrix verify that 71V2556SA100BG is sourced from the original manufacturer or authorized distributors?

All 71V2556SA100BG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V2556SA100BG meets industry standards.

7.What is the process for return or replacement of 71V2556SA100BG?

All 71V2556SA100BG units undergo pre-shipment inspection (PSI). If there is an issue with 71V2556SA100BG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V2556SA100BG part is unused and in its original packaging.

Return procedure for 71V2556SA100BG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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