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Renesas 71V2556SA100BG8

Part No.:
71V2556SA100BG8
Manufacturer:
Renesas
Category:
Memory
Package:
119-BGA
Datasheet:
Aetrix71V2556SA100BG8.pdf
Description:
IC SRAM 4.5MBIT PAR 119PBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,731

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Product details

Overview

71V2556SA100BG8 from IDT (now Renesas) is a 3.3V synchronous ZBT™ SRAM with 128K × 36-bit (4.5 Mbit) organization, 166 MHz operation (3.5 ns clock-to-data access), and pipelined outputs. It supports zero-bus-turnaround (ZBT) for dead-cycle-free read/write transitions and features 2.5V I/O supply, individual byte write control (BW1–BW4), and optional IEEE 1149.1 JTAG boundary scan. Used in high-speed network packet buffers and telecom line-card data paths.

For engineers reviewing the 71V2556SA100BG8 datasheet, 71V2556SA100BG8 pinout, 71V2556SA100BG8 application, or 71V2556SA100BG8 equivalent, key selection criteria include ZBT timing compliance, TQFP-100 package compatibility, burst counter behavior (linear/interleaved via LBO), 3.3V core / 2.5V I/O voltage separation, and industrial temperature support (–40°C to +85°C).

Technical Context

This device implements a fully synchronous, clock-edge-triggered architecture with address/data/control registers aligned to the rising edge of CLK. Its internal burst counter enables four-word bursts per address load, with sequence direction (linear or interleaved) controlled by the LBO pin level.

The ZBT architecture eliminates bus turnaround latency by allowing immediate read-after-write or write-after-read transitions without wait states. Output enable (OE) is asynchronous but internally synchronized, and chip enable logic (CE1, CE2, CE2) supports depth expansion with tri-state hold on deselection.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization 128K × 36-bit (4.5 Mbit); supports 36-bit wide data paths in networking and baseband processing.
Max Clock Frequency 166 MHz; enables 6 ns cycle time for high-throughput buffering in packet-switched systems.
Access Time 3.5 ns clock-to-data (tCD); guarantees deterministic output timing for pipelined system synchronization.
Supply Voltages VDD = 3.3 V ±5%, VDDQ = 2.5 V; separates core logic and I/O domains to reduce noise coupling and support mixed-voltage interfaces.
Burst Capability 4-word linear or interleaved burst; reduces address bus traffic and improves bandwidth efficiency in sequential access patterns.
Operating Temperature –40°C to +85°C; qualified for industrial-grade deployment in telecom infrastructure and industrial controllers.
JTAG Support IEEE 1149.1 compliant (optional); enables boundary-scan testing without requiring external test fixtures.

Pinout & Package

Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pin 64 supports ZZ (sleep mode) on latest die revision.

Pin/Terminal Circuit Role Design Meaning
A0–A16 Address Inputs 17-bit address bus; selects one of 128K locations; sampled on rising CLK edge.
CLK Master Clock Input Rising-edge-triggered; synchronizes all register transfers and burst counter advancement.
R/W Read/Write Control Single pin defines cycle direction; status at first address load determines entire burst sequence.
ADV/LD Address Load/Burst Counter Advance Low = load external address; High = increment internal burst counter; controls burst sequencing.
LBO Burst Order Select Low = linear burst (0,1,2,3); High = interleaved burst (0,2,1,3); sets memory access pattern.
BW1–BW4 Byte Write Enables Independent 8-bit write masking; allows partial writes without read-modify-write overhead.
CE1, CE2, CE2 Chip Enable Inputs Three enables support depth expansion; any false condition halts new operations but completes pending cycles.
I/O0–I/O31, I/OP1–I/OP4 Data I/O Bus 36-bit bidirectional bus (32 data + 4 parity); operates at 2.5V I/O voltage for signal integrity.
VDD, VDDQ, VSS Power Supplies VDD (3.3V core), VDDQ (2.5V I/O), VSS (common ground); decoupling required per JEDEC layout guidelines.

Key Features

Feature Design Value
ZBTTM Architecture Eliminates bus turnaround dead cycles between reads and writes - critical for sustained 166 MHz throughput in FIFO applications.
Pipelined Outputs Internally registered outputs eliminate need for external OE timing control; simplifies PCB routing and timing closure.
4-Word Burst Counter Reduces address bus activity by 75% during sequential accesses; improves effective bandwidth without increasing clock rate.
Individual Byte Write Enables precise 8-bit updates across 36-bit bus; avoids full-word overwrites and preserves data coherency in multi-threaded buffers.
Optional JTAG Boundary Scan Supports IEEE 1149.1 test access for production validation and field diagnostics without dedicated test pads.

Applications

Network Packet Buffer Telecom Line Card

Use Scenario: Storing incoming/outgoing Ethernet or SONET frames in real-time switching fabric.

IC Role / Device Role / Timing Role: High-speed dual-port buffer with zero-turnaround capability to sustain full-line-rate traffic without backpressure.

Use Value: 166 MHz clock rate and 3.5 ns tCD ensure sub-6 ns latency per word, enabling deterministic frame queuing in 10G+ systems.

Use Scenario: Temporary storage of voice-over-IP (VoIP) packets in DSP-based media gateways.

IC Role / Device Role / Timing Role: Synchronous SRAM acting as jitter buffer and echo cancellation memory with burst-aligned access.

Use Value: 4-word burst mode matches typical VoIP packet segmentation, reducing controller overhead and improving CPU utilization.

Baseband Processor Cache Industrial PLC Data Log

Use Scenario: Intermediate storage for LTE/5G baseband modulation/demodulation pipelines.

IC Role / Device Role / Timing Role: Low-latency scratchpad memory supporting parallel FFT and channel estimation algorithms.

Use Value: Pipelined outputs and 2.5V I/O minimize signal distortion at high clock rates, preserving SNR in RF subsystems.

Use Scenario: Cyclic data logging in programmable logic controllers operating in harsh factory environments.

IC Role / Device Role / Timing Role: Industrial-temperature SRAM providing nonvolatile-like reliability for mission-critical event records.

Use Value: –40°C to +85°C rating and robust power sequencing (no strict ramp order required) ensure uptime in uncontrolled enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C1356BV18-167AXC 128K × 36, 167 MHz, 2.5V core/I/O, no ZBT, LVDS-compatible outputs Lacks zero-bus-turnaround; requires external OE management and has higher I/O voltage sensitivity Choose when LVDS signaling or lower core voltage is prioritized over ZBT timing efficiency
AS7C33128P-10BIN 128K × 36, 10 ns async access, 3.3V only, no burst or pipelining Asynchronous interface; no burst counter, no clock enable, no JTAG, slower max speed Choose for cost-sensitive legacy designs where synchronous timing and burst features are unnecessary

Compared with CY7C1356BV18-167AXC and AS7C33128P-10BIN, the 71V2556SA100BG8 uniquely delivers ZBT timing, pipelined outputs, and industrial-temperature operation in a single TQFP-100 package - making it optimal for latency-critical, high-reliability buffering where bus efficiency and deterministic timing are mandatory.

Availability

71V2556SA100BG8 is available at Aetrix Electronics and suitable for network packet buffers, telecom line cards, and industrial PLC data loggers requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 71V2556SA100BG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, specializes in high-performance timing, memory, and interface solutions for communications and computing infrastructure.

The 71V2556SA100BG8 belongs to IDT's ZBT SRAM product line, designed specifically for low-latency, high-bandwidth buffering in telecom, networking, and baseband processing systems demanding zero-bus-turnaround performance.

FAQ

What is the ZBTTM feature of the 71V2556SA100BG8 and how does it improve system performance?

The ZBTTM (Zero Bus Turnaround) feature of the 71V2556SA100BG8 eliminates idle cycles when switching between read and write operations. Unlike conventional SRAMs that require turnaround time to tri-state the bus, the 71V2556SA100BG8 allows immediate back-to-back read/write transitions. This sustains full 166 MHz throughput in burst-intensive applications like packet buffering, directly improving effective bandwidth and reducing controller wait states.

Does the 71V2556SA100BG8 support both linear and interleaved burst modes, and how is this selected?

Yes, the 71V2556SA100BG8 supports both linear and interleaved 4-word burst sequences. The selection is controlled by the LBO (Linear/Interleaved Burst Order) pin: LBO = VSS enables linear order (0,1,2,3), while LBO = VDD enables interleaved order (0,2,1,3). This flexibility allows optimization for different memory access patterns - linear for sequential streaming, interleaved for cache-line-aligned fetches - without firmware changes.

What are the power supply requirements for the 71V2556SA100BG8, and can VDD and VDDQ be powered independently?

The 71V2556SA100BG8 requires two independent supplies: VDD = 3.3 V ±5% for core logic and VDDQ = 2.5 V for I/O circuits. These supplies must be decoupled separately and may be sequenced in any order - no strict power-up sequence is mandated. This separation reduces I/O noise coupling into the core and enables interoperability with 2.5V FPGA or ASIC interfaces while maintaining 3.3V logic robustness.

Is JTAG boundary scan functionality enabled by default on the 71V256SA100BG8, and what pins are used?

JTAG boundary scan is optional on the 71V2556SA100BG8 and disabled by default. When enabled, it uses five dedicated pins: TMS, TDI, TCK, TDO, and TRST (all located on the TQFP-100 package's U-row). These pins are NC on the base "S" version but functional on the "SA" variant (like 71V2556SA100BG8). TRST is optional and may be left floating if not needed, as it is internally pulled to VDD.

How does the 71V2556SA100BG8 handle chip deselection, and what happens to ongoing data transfers?

When any chip enable (CE1, CE2, or CE2) is deasserted while ADV/LD is low, the 71V2556SA100BG8 halts initiation of new memory operations but completes all pending read or write transfers. The data bus enters high-impedance state two clock cycles after deselection is recognized. This ensures data integrity during dynamic depth expansion or partial memory disable scenarios without corrupting in-flight transactions.

71V2556SA100BG8 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
119-BGA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR (ZBT)
Memory Size:
4.5Mbit
Memory Organization:
128K x 36
Memory Interface:
Parallel
Clock Frequency:
100 MHz
Write Cycle Time - Word, Page:
-
Access Time:
5 ns
Voltage - Supply:
3.135V ~ 3.465V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
119-PBGA (14x22)

71V2556SA100BG8 FAQ

1.How can I place an order for 71V2556SA100BG8 through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V2556SA100BG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V2556SA100BG8 reliable?

The price and inventory of 71V2556SA100BG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V2556SA100BG8 is usually 5 days.

3.What payment methods are accepted for 71V2556SA100BG8?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V2556SA100BG8 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 71V2556SA100BG8?

71V2556SA100BG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V2556SA100BG8 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V2556SA100BG8?

For technical support, including 71V2556SA100BG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V2556SA100BG8 requirements.

6.How does Aetrix verify that 71V2556SA100BG8 is sourced from the original manufacturer or authorized distributors?

All 71V2556SA100BG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V2556SA100BG8 meets industry standards.

7.What is the process for return or replacement of 71V2556SA100BG8?

All 71V2556SA100BG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V2556SA100BG8, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V2556SA100BG8 part is unused and in its original packaging.

Return procedure for 71V2556SA100BG8:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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