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Renesas 71V2556SA100BGI8

Part No.:
71V2556SA100BGI8
Manufacturer:
Renesas
Category:
Memory
Package:
119-BGA
Datasheet:
Aetrix71V2556SA100BGI8.pdf
Description:
IC SRAM 4.5MBIT PAR 119PBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,571

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Product details

Overview

71V2556SA100BGI8 from IDT (now Renesas) is a 128K × 36-bit (4.5 Mbit), 3.3V synchronous ZBT™ SRAM with 2.5V I/O, pipelined outputs, and zero-bus-turnaround architecture. It delivers 166 MHz operation (3.5 ns clock-to-data access), supports 4-word linear/interleaved burst modes via internal counter, and features individual byte write control (BW1–BW4), three chip enables, and optional IEEE 1149.1 JTAG boundary scan. It is used in high-speed packet buffering and cache applications in networking line cards.

For engineers reviewing the 71V2556SA100BGI8 datasheet, 71V2556SA100BGI8 pinout, 71V2556SA100BGI8 application, or 71V2556SA100BGI8 equivalent, key selection considerations include ZBT timing compliance, TQFP-100 package compatibility, industrial temperature range (–40°C to +85°C), 2.5V I/O voltage domain separation, and burst mode configuration via LBO pin.

Technical Context

This device implements a fully synchronous, pipelined read/write interface with positive-edge-triggered registers for address, data, and control signals. Its ZBT architecture eliminates dead cycles between consecutive reads and writes by overlapping bus turnaround with internal memory access.

The on-chip 4-word burst counter advances on ADV/LD = HIGH and supports both linear and interleaved sequences selected by the LBO pin. Output enable (OE) is internally synchronized, removing external timing constraints, while Clock Enable (CEN) halts all synchronous operations without affecting register state.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization 128K × 36 bits (4.5 Mbit); supports 36-bit wide data path for high-throughput buffering
Max Clock Frequency 166 MHz; enables 6 ns cycle time for sustained burst transfers in telecom ASIC interfaces
Access Time 3.5 ns clock-to-data (tCD); guarantees deterministic output valid window for synchronous system timing closure
Supply Voltages VDD = 3.3 V ±5%, VDDQ = 2.5 V; separates core logic and I/O domains to reduce noise coupling
Burst Capability 4-word linear or interleaved burst; reduces address bus activity and improves bandwidth efficiency
Operating Temperature –40°C to +85°C; qualified for industrial-grade deployment in base station and router hardware
JTAG Support IEEE 1149.1 compliant (optional); enables boundary-scan testability without additional test fixtures

Pinout & Package

Packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, lead-free and RoHS-compliant (suffix 'G'). Pin 64 supports ZZ (sleep mode) on latest die revision; pins 14, 16, and 66 require ≥VIH but not direct VDD connection.

Pin/Terminal Circuit Role Design Meaning
A0–A16 Address Inputs 17-bit address bus; selects one of 128K locations; latched on rising CLK edge
CLK Master Clock Input Positive-edge-triggered; synchronizes all registers and controls pipeline stage advancement
R/W Read/Write Control Single pin determines cycle direction; status sampled at first address load to define full burst
ADV/LD Address Load / Burst Counter Advance LOW loads external address; HIGH increments internal burst counter for sequential access
LBO Burst Order Select Connect to VSS for linear burst (0,1,2,3); to VDD for interleaved (0,2,1,3)
BW1–BW4 Byte Write Enables Active-Low per-byte controls; allow partial 36-bit word updates without read-modify-write overhead
CE1, CE2, CE2 Chip Enable Inputs Three independent enables; any false condition deselects device; pending transfers complete before tri-state
I/O0–I/O31, I/OP1–I/OP4 Data I/O Bus 32 data + 4 parity lines; 2.5V I/O domain; bidirectional with OE-controlled output enable
OE Output Enable Asynchronous active-low; forces outputs to high-Z regardless of clock or R/W state
CEN Clock Enable Asynchronous active-high; blocks CLK propagation; preserves register contents during suspend

Key Features

Feature Design Value
ZBT™ Architecture Eliminates bus turnaround dead cycles between read/write transitions, enabling continuous 166 MHz throughput
Pipelined Outputs Internally synchronized OE removes external timing constraints on output disable; simplifies PCB layout
4-Word Burst Counter Reduces address bus toggling by 75% per burst; supports both linear and interleaved sequences via LBO pin
Individual Byte Write BW1–BW4 allow selective 8-bit updates within 36-bit word; avoids destructive read-modify-write sequences
Three Chip Enables Enable depth expansion across multiple devices without external decode logic; supports hierarchical memory mapping
Optional JTAG Boundary Scan IEEE 1149.1 support enables production test coverage and interconnect verification without dedicated test pads

Applications

Network Packet Buffering High-Speed Cache Memory

Use Scenario: Line-rate buffering of Ethernet frames in Layer 2/3 switches and routers.

IC Role / Device Role / Timing Role: Primary 36-bit-wide FIFO buffer with zero-turnaround burst reads/writes to match ASIC data rates.

Use Value: 166 MHz operation and pipelined outputs sustain 6 Gbps aggregate bandwidth without wait states.

Use Scenario: Secondary cache for network processor units requiring low-latency, high-bandwidth access.

IC Role / Device Role / Timing Role: Synchronous SRAM serving as tightly coupled instruction/data cache with deterministic 3.5 ns tCD.

Use Value: ZBT architecture enables back-to-back read/write bursts, reducing average access latency by >40% vs. standard SSRAM.

Telecom Baseband Processing Industrial Real-Time Control

Use Scenario: Frame reassembly and header processing in wireless base station digital front-end modules.

IC Role / Device Role / Timing Role: Dual-port-like behavior via burst sequencing for parallel ingress/egress data handling.

Use Value: Interleaved burst mode aligns with FFT/IFFT memory access patterns, improving DMA efficiency.

Use Scenario: Deterministic data logging and motion control loop storage in programmable logic controllers.

IC Role / Device Role / Timing Role: Industrial-temperature SRAM providing guaranteed timing margins under thermal stress.

Use Value: –40°C to +85°C qualification ensures reliable operation in uncontrolled cabinet environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C1355BV33-133AXC 128K × 36, 133 MHz max, 3.3V core/I/O, no JTAG, SOJ-100 package Lacks ZBT architecture; requires external OE control and has longer tCD (4.5 ns) Lower-cost option where 166 MHz and zero-turnaround are not required
AS7C3256A-15JCIN 128K × 32, 15 ns async access, 3.3V, TQFP-100; asynchronous interface only No burst counter, no pipelining, no clocked interface - incompatible timing model Only suitable for non-pipelined legacy designs; not a functional substitute

Compared with CY7C1355BV33-133AXC and AS7C3256A-15JCIN, the 71V2556SA100BGI8 uniquely delivers ZBT timing, 166 MHz operation, and integrated burst control - critical for modern packet-processing pipelines where bus efficiency directly impacts system throughput.

Availability

71V2556SA100BGI8 is available at Aetrix Electronics and suitable for network infrastructure, industrial automation, and telecom equipment requiring stable component supply, long-lifecycle support, and industrial-temperature performance.

Supply support for 71V2556SA100BGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory, and interface solutions for communications and computing markets.

The 71V2556SA100BGI8 belongs to IDT's ZBT SRAM product line, designed specifically for zero-bus-turnaround applications in high-speed networking, baseband processing, and real-time embedded systems demanding deterministic latency and burst efficiency.

FAQ

What is the operating temperature range for the 71V2556SA100BGI8?

The 71V2556SA100BGI8 is rated for industrial temperature operation from –40°C to +85°C. This specification is verified per the manufacturer's datasheet and applies to all electrical parameters under recommended DC operating conditions (VDD = 3.3 V ±5%, VDDQ = 2.5 V). The device uses thermal characterization to ensure reliability across this full range.

Does the 71V2556SA100BGI8 support true pipelined read/write operations?

Yes, the 71V2556SA100BGI8 implements fully pipelined synchronous operation: address, control, and data inputs are registered on the rising CLK edge, and output data is valid after a fixed 3.5 ns clock-to-data delay. The ZBT architecture allows immediate transition from write to read (or vice versa) without dead cycles, enabling continuous 166 MHz throughput.

How is burst mode configured on the 71V2556SA100BGI8?

Burst mode on the 71V2556SA100BGI8 is controlled by the LBO (Linear/Interleaved Burst Order) pin. When LBO = VSS, the device executes linear burst (0,1,2,3); when LBO = VDD, it executes interleaved burst (0,2,1,3). The burst counter advances on ADV/LD = HIGH and wraps automatically after four words.

What is the function of the CEN pin on the 71V2556SA100BGI8?

The CEN (Clock Enable) pin on the 71V2556SA100BGI8 is an asynchronous active-high input that gates the internal clock distribution. When CEN = HIGH, CLK edges are blocked, halting all synchronous operations while preserving register contents. This enables low-power suspend modes without losing state, and resumes instantly when CEN returns LOW.

Is JTAG boundary scan mandatory on the 71V2556SA100BGI8?

No, JTAG boundary scan is optional on the 71V2556SA100BGI8. Pins TMS, TDI, TCK, TDO, and TRST are NC on the base "S" version but assigned to JTAG functions on the "SA" version (as in 71V2556SA100BGI8). TRST is pull-up internally and may be left floating if unused. IEEE 1149.1 compliance is implemented only when these pins are actively driven.

71V2556SA100BGI8 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
119-BGA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR (ZBT)
Memory Size:
4.5Mbit
Memory Organization:
128K x 36
Memory Interface:
Parallel
Clock Frequency:
100 MHz
Write Cycle Time - Word, Page:
-
Access Time:
5 ns
Voltage - Supply:
3.135V ~ 3.465V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
119-PBGA (14x22)

71V2556SA100BGI8 FAQ

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Please submit a Request for Quotation (RFQ) for 71V2556SA100BGI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V2556SA100BGI8 reliable?

The price and inventory of 71V2556SA100BGI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V2556SA100BGI8 is usually 5 days.

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Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V2556SA100BGI8?

For technical support, including 71V2556SA100BGI8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V2556SA100BGI8 requirements.

6.How does Aetrix verify that 71V2556SA100BGI8 is sourced from the original manufacturer or authorized distributors?

All 71V2556SA100BGI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V2556SA100BGI8 meets industry standards.

7.What is the process for return or replacement of 71V2556SA100BGI8?

All 71V2556SA100BGI8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V2556SA100BGI8, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V2556SA100BGI8 part is unused and in its original packaging.

Return procedure for 71V2556SA100BGI8:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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