Renesas 71V2556SA100BGI8
- Part No.:
- 71V2556SA100BGI8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V2556SA100BGI8.pdf
- Description:
- IC SRAM 4.5MBIT PAR 119PBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
71V2556SA100BGI8 from IDT (now Renesas) is a 128K × 36-bit (4.5 Mbit), 3.3V synchronous ZBT™ SRAM with 2.5V I/O, pipelined outputs, and zero-bus-turnaround architecture. It delivers 166 MHz operation (3.5 ns clock-to-data access), supports 4-word linear/interleaved burst modes via internal counter, and features individual byte write control (BW1–BW4), three chip enables, and optional IEEE 1149.1 JTAG boundary scan. It is used in high-speed packet buffering and cache applications in networking line cards.
For engineers reviewing the 71V2556SA100BGI8 datasheet, 71V2556SA100BGI8 pinout, 71V2556SA100BGI8 application, or 71V2556SA100BGI8 equivalent, key selection considerations include ZBT timing compliance, TQFP-100 package compatibility, industrial temperature range (–40°C to +85°C), 2.5V I/O voltage domain separation, and burst mode configuration via LBO pin.
Technical Context
This device implements a fully synchronous, pipelined read/write interface with positive-edge-triggered registers for address, data, and control signals. Its ZBT architecture eliminates dead cycles between consecutive reads and writes by overlapping bus turnaround with internal memory access.
The on-chip 4-word burst counter advances on ADV/LD = HIGH and supports both linear and interleaved sequences selected by the LBO pin. Output enable (OE) is internally synchronized, removing external timing constraints, while Clock Enable (CEN) halts all synchronous operations without affecting register state.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36 bits (4.5 Mbit); supports 36-bit wide data path for high-throughput buffering |
| Max Clock Frequency | 166 MHz; enables 6 ns cycle time for sustained burst transfers in telecom ASIC interfaces |
| Access Time | 3.5 ns clock-to-data (tCD); guarantees deterministic output valid window for synchronous system timing closure |
| Supply Voltages | VDD = 3.3 V ±5%, VDDQ = 2.5 V; separates core logic and I/O domains to reduce noise coupling |
| Burst Capability | 4-word linear or interleaved burst; reduces address bus activity and improves bandwidth efficiency |
| Operating Temperature | –40°C to +85°C; qualified for industrial-grade deployment in base station and router hardware |
| JTAG Support | IEEE 1149.1 compliant (optional); enables boundary-scan testability without additional test fixtures |
Pinout & Package
Packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, lead-free and RoHS-compliant (suffix 'G'). Pin 64 supports ZZ (sleep mode) on latest die revision; pins 14, 16, and 66 require ≥VIH but not direct VDD connection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address Inputs | 17-bit address bus; selects one of 128K locations; latched on rising CLK edge |
| CLK | Master Clock Input | Positive-edge-triggered; synchronizes all registers and controls pipeline stage advancement |
| R/W | Read/Write Control | Single pin determines cycle direction; status sampled at first address load to define full burst |
| ADV/LD | Address Load / Burst Counter Advance | LOW loads external address; HIGH increments internal burst counter for sequential access |
| LBO | Burst Order Select | Connect to VSS for linear burst (0,1,2,3); to VDD for interleaved (0,2,1,3) |
| BW1–BW4 | Byte Write Enables | Active-Low per-byte controls; allow partial 36-bit word updates without read-modify-write overhead |
| CE1, CE2, CE2 | Chip Enable Inputs | Three independent enables; any false condition deselects device; pending transfers complete before tri-state |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O Bus | 32 data + 4 parity lines; 2.5V I/O domain; bidirectional with OE-controlled output enable |
| OE | Output Enable | Asynchronous active-low; forces outputs to high-Z regardless of clock or R/W state |
| CEN | Clock Enable | Asynchronous active-high; blocks CLK propagation; preserves register contents during suspend |
Key Features
| Feature | Design Value |
|---|---|
| ZBT™ Architecture | Eliminates bus turnaround dead cycles between read/write transitions, enabling continuous 166 MHz throughput |
| Pipelined Outputs | Internally synchronized OE removes external timing constraints on output disable; simplifies PCB layout |
| 4-Word Burst Counter | Reduces address bus toggling by 75% per burst; supports both linear and interleaved sequences via LBO pin |
| Individual Byte Write | BW1–BW4 allow selective 8-bit updates within 36-bit word; avoids destructive read-modify-write sequences |
| Three Chip Enables | Enable depth expansion across multiple devices without external decode logic; supports hierarchical memory mapping |
| Optional JTAG Boundary Scan | IEEE 1149.1 support enables production test coverage and interconnect verification without dedicated test pads |
Applications
| Network Packet Buffering | High-Speed Cache Memory |
|---|---|
|
Use Scenario: Line-rate buffering of Ethernet frames in Layer 2/3 switches and routers. IC Role / Device Role / Timing Role: Primary 36-bit-wide FIFO buffer with zero-turnaround burst reads/writes to match ASIC data rates. Use Value: 166 MHz operation and pipelined outputs sustain 6 Gbps aggregate bandwidth without wait states. |
Use Scenario: Secondary cache for network processor units requiring low-latency, high-bandwidth access. IC Role / Device Role / Timing Role: Synchronous SRAM serving as tightly coupled instruction/data cache with deterministic 3.5 ns tCD. Use Value: ZBT architecture enables back-to-back read/write bursts, reducing average access latency by >40% vs. standard SSRAM. |
| Telecom Baseband Processing | Industrial Real-Time Control |
|
Use Scenario: Frame reassembly and header processing in wireless base station digital front-end modules. IC Role / Device Role / Timing Role: Dual-port-like behavior via burst sequencing for parallel ingress/egress data handling. Use Value: Interleaved burst mode aligns with FFT/IFFT memory access patterns, improving DMA efficiency. |
Use Scenario: Deterministic data logging and motion control loop storage in programmable logic controllers. IC Role / Device Role / Timing Role: Industrial-temperature SRAM providing guaranteed timing margins under thermal stress. Use Value: –40°C to +85°C qualification ensures reliable operation in uncontrolled cabinet environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1355BV33-133AXC | 128K × 36, 133 MHz max, 3.3V core/I/O, no JTAG, SOJ-100 package | Lacks ZBT architecture; requires external OE control and has longer tCD (4.5 ns) | Lower-cost option where 166 MHz and zero-turnaround are not required |
| AS7C3256A-15JCIN | 128K × 32, 15 ns async access, 3.3V, TQFP-100; asynchronous interface only | No burst counter, no pipelining, no clocked interface - incompatible timing model | Only suitable for non-pipelined legacy designs; not a functional substitute |
Compared with CY7C1355BV33-133AXC and AS7C3256A-15JCIN, the 71V2556SA100BGI8 uniquely delivers ZBT timing, 166 MHz operation, and integrated burst control - critical for modern packet-processing pipelines where bus efficiency directly impacts system throughput.
Availability
71V2556SA100BGI8 is available at Aetrix Electronics and suitable for network infrastructure, industrial automation, and telecom equipment requiring stable component supply, long-lifecycle support, and industrial-temperature performance.
Supply support for 71V2556SA100BGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory, and interface solutions for communications and computing markets.
The 71V2556SA100BGI8 belongs to IDT's ZBT SRAM product line, designed specifically for zero-bus-turnaround applications in high-speed networking, baseband processing, and real-time embedded systems demanding deterministic latency and burst efficiency.
FAQ
What is the operating temperature range for the 71V2556SA100BGI8?
The 71V2556SA100BGI8 is rated for industrial temperature operation from –40°C to +85°C. This specification is verified per the manufacturer's datasheet and applies to all electrical parameters under recommended DC operating conditions (VDD = 3.3 V ±5%, VDDQ = 2.5 V). The device uses thermal characterization to ensure reliability across this full range.
Does the 71V2556SA100BGI8 support true pipelined read/write operations?
Yes, the 71V2556SA100BGI8 implements fully pipelined synchronous operation: address, control, and data inputs are registered on the rising CLK edge, and output data is valid after a fixed 3.5 ns clock-to-data delay. The ZBT architecture allows immediate transition from write to read (or vice versa) without dead cycles, enabling continuous 166 MHz throughput.
How is burst mode configured on the 71V2556SA100BGI8?
Burst mode on the 71V2556SA100BGI8 is controlled by the LBO (Linear/Interleaved Burst Order) pin. When LBO = VSS, the device executes linear burst (0,1,2,3); when LBO = VDD, it executes interleaved burst (0,2,1,3). The burst counter advances on ADV/LD = HIGH and wraps automatically after four words.
What is the function of the CEN pin on the 71V2556SA100BGI8?
The CEN (Clock Enable) pin on the 71V2556SA100BGI8 is an asynchronous active-high input that gates the internal clock distribution. When CEN = HIGH, CLK edges are blocked, halting all synchronous operations while preserving register contents. This enables low-power suspend modes without losing state, and resumes instantly when CEN returns LOW.
Is JTAG boundary scan mandatory on the 71V2556SA100BGI8?
No, JTAG boundary scan is optional on the 71V2556SA100BGI8. Pins TMS, TDI, TCK, TDO, and TRST are NC on the base "S" version but assigned to JTAG functions on the "SA" version (as in 71V2556SA100BGI8). TRST is pull-up internally and may be left floating if unused. IEEE 1149.1 compliance is implemented only when these pins are actively driven.
71V2556SA100BGI8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 100 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V2556SA100BGI8 FAQ
1.How can I place an order for 71V2556SA100BGI8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V2556SA100BGI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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6.How does Aetrix verify that 71V2556SA100BGI8 is sourced from the original manufacturer or authorized distributors?
All 71V2556SA100BGI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V2556SA100BGI8 meets industry standards.
7.What is the process for return or replacement of 71V2556SA100BGI8?
All 71V2556SA100BGI8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V2556SA100BGI8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V2556SA100BGI8 part is unused and in its original packaging.
Return procedure for 71V2556SA100BGI8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V2556SA100BGI8 Tags

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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology

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AT21CS01-STUM10-T
Microchip Technology

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AT24C02C-SSHM-T
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24LC01BT-I/OT
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M24C02-FMC6TG
STMicroelectronics

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AT24CS02-SSHM-T
Microchip Technology

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93LC46BT-I/OT
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AT24C04C-SSHM-T
Microchip Technology

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24LC01BT-I/SN
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24AA02UIDT-I/OT
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AT24C08C-STUM-T
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