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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas 71V2556SA133BG

Name: 71V2556SA133BG
Brand: Renesas
SKU: 71V2556SA133BG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 71V2556SA133BG

Manufacturer:: Renesas

Category:: Memory

Package:: 119-BGA

Datasheet:: 71V2556SA133BG.pdf

Description:: IC SRAM 4.5MBIT PAR 119PBGA

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Product details

Overview

71V2556SA133BG from IDT (now Renesas) is a 128K × 36-bit (4.5 Mbit), 3.3V synchronous ZBT™ SRAM with 2.5V I/O, pipelined outputs, and zero bus turnaround architecture. It delivers 166 MHz operation (3.5 ns clock-to-data access), supports 4-word linear/interleaved burst modes via internal counter, and features individual byte write control (BW1–BW4), three chip enables, and optional IEEE 1149.1 JTAG boundary scan. It is used in high-speed packet buffering and cache applications in networking switches and telecom line cards.

For engineers reviewing the 71V2556SA133BG datasheet, 71V2556SA133BG pinout, 71V2556SA133BG application, or 71V2556SA133BG equivalent, key selection considerations include its ZBT™ zero-bus-turnaround timing behavior, 100-pin TQFP package (PKG100), industrial temperature range (–40°C to +85°C), and compatibility with 3.3V core / 2.5V I/O system interfaces.

Technical Context

The 71V2556SA133BG implements a fully synchronous, clock-edge-triggered architecture with address, data, and control registers aligned to the rising edge of CLK. Its internal burst counter-controlled by ADV/LD and LBO-enables automatic 4-word sequential or interleaved addressing without external logic.

ZBT™ operation eliminates dead cycles between read/write transitions by overlapping bus release and acquisition within a single clock cycle. The device integrates an internally synchronized output buffer enable (OE), removing the need for external OE timing control, and supports depth expansion via CE1/CE2/CE2 with independent assertion logic.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	128K × 36 bits (4.5 Mbit); provides 36-bit wide data path for high-throughput buffering.
Max Clock Frequency	166 MHz; enables 3.5 ns clock-to-data access time for real-time packet processing.
Supply Voltages	VDD = 3.3 V ±5% (core), VDDQ = 2.5 V ±10% (I/O); decoupled power domains reduce noise coupling.
Burst Capability	4-word linear or interleaved burst; reduces address bus overhead and improves bandwidth efficiency.
Operating Temperature	–40°C to +85°C; qualified for industrial-grade embedded networking and base station equipment.
Package	100-pin TQFP (14 mm × 20 mm, JEDEC standard); compatible with automated SMT assembly and thermal management.
JTAG Support	IEEE 1149.1 compliant (optional); enables boundary-scan testing without additional test fixtures.

Pinout & Package

71V2556SA133BG is packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body size, with 0.5 mm lead pitch. Pin 1 is located at top-left corner (marked by dot or bevel), and pin numbering proceeds counterclockwise.

Pin	Circuit Role	Design Meaning
A0–A16	Address Inputs	17-bit address bus; selects one of 128K locations; sampled on rising CLK edge.
CLK	Input Clock	Rising-edge-triggered master clock; synchronizes all address, control, and data transfers.
R/W	Read/Write Control	Single pin determines cycle direction; latched at rising CLK edge to define burst mode behavior.
ADV/LD	Address Load/Burst Advance	Low = load external address; High = increment internal burst counter; defines burst sequence start.
LBO	Burst Order Select	Connected to VSS for linear burst, VDD for interleaved burst; configures 4-word access pattern.
BW1–BW4	Byte Write Enables	Four independent 8-bit write masks; allow partial-word writes without read-modify-write overhead.
CE1, CE2, CE2	Chip Enable Inputs	Three enables support depth expansion; chip deselects if any is deasserted while ADV/LD = Low.
I/O0–I/O31, I/OP1–I/OP4	Data I/O Bus	32 data + 4 parity lines; bidirectional, 2.5V-tolerant; tri-stated automatically on deselect or write.
CEN	Clock Enable	High = suspend all synchronous operation; registers retain state; no clock propagation through logic.
OE	Output Enable	Asynchronous active-low; overrides pipelined outputs to force Hi-Z regardless of CLK or R/W state.

Key Features

Feature	Design Value
ZBT™ Zero Bus Turnaround	Eliminates idle cycles between consecutive read/write operations, enabling continuous 166 MHz throughput.
Pipelined Output Registers	Internal output registers synchronized to CLK eliminate external OE timing constraints and simplify PCB layout.
4-Word Burst Counter	On-chip counter generates sequential or interleaved addresses for four consecutive words per command, reducing bus arbitration latency.
Individual Byte Write Control	BW1–BW4 pins enable selective 8-bit writes to any byte lane, preserving untargeted data without full-word read-modify-write.
Three Chip Enables	CE1, CE2, CE2 allow flexible depth expansion across multiple devices with independent select granularity.
Optional JTAG Boundary Scan	IEEE 1149.1-compliant TAP controller (TMS/TDI/TCK/TDO/TRST) supports production test and debug without physical probe access.

Applications

Network Packet Buffering	Telecom Line Card Cache
Use Scenario: Storing ingress/egress Ethernet or SONET frames in multi-port switching ASICs where low-latency, deterministic access is required. IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM acting as first-level packet buffer; ZBT™ timing ensures back-to-back read/write without pipeline stalls. Use Value: Achieves sustained 166 MHz burst throughput with zero turnaround penalty, directly improving switch fabric utilization and reducing frame loss under congestion.	Use Scenario: Serving as instruction/data cache for DSP-based channelized TDM processors in cellular base station remote radio units. IC Role / Device Role / Timing Role: Synchronous cache memory interfacing with 3.3V DSP core and 2.5V I/O peripherals; burst mode matches DSP's 4-word fetch pattern. Use Value: 4-word linear burst and pipelined outputs align with DSP memory access patterns, cutting average instruction fetch latency by >30% vs. asynchronous SRAM.
Industrial PLC Data Logging	Avionics Data Acquisition Buffer
Use Scenario: Capturing high-speed sensor telemetry (e.g., vibration, temperature) in ruggedized programmable logic controllers deployed in factory automation. IC Role / Device Role / Timing Role: Industrial-temperature SRAM providing deterministic write buffering before flash transfer; BWx pins enable timestamp+data atomic writes. Use Value: –40°C to +85°C rating and 3.3V/2.5V dual-supply operation ensure reliable operation in uncontrolled cabinet environments without derating.	Use Scenario: Temporarily storing high-rate ADC samples (e.g., 10 MS/s × 16-bit) from flight control sensors prior to ARINC-429 packetization. IC Role / Device Role / Timing Role: Deterministic, jitter-free SRAM buffer with JTAG testability for DO-254 compliance; CEN pin enables synchronized power-down during safe-mode entry. Use Value: IEEE 1149.1 boundary scan validates interconnect integrity pre-flight, and CEN-controlled suspension meets avionics safe-state transition requirements.

Network Packet Buffering

Telecom Line Card Cache

Use Scenario: Storing ingress/egress Ethernet or SONET frames in multi-port switching ASICs where low-latency, deterministic access is required.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM acting as first-level packet buffer; ZBT™ timing ensures back-to-back read/write without pipeline stalls.

Use Value: Achieves sustained 166 MHz burst throughput with zero turnaround penalty, directly improving switch fabric utilization and reducing frame loss under congestion.

Use Scenario: Serving as instruction/data cache for DSP-based channelized TDM processors in cellular base station remote radio units.

IC Role / Device Role / Timing Role: Synchronous cache memory interfacing with 3.3V DSP core and 2.5V I/O peripherals; burst mode matches DSP's 4-word fetch pattern.

Use Value: 4-word linear burst and pipelined outputs align with DSP memory access patterns, cutting average instruction fetch latency by >30% vs. asynchronous SRAM.

Industrial PLC Data Logging

Avionics Data Acquisition Buffer

Use Scenario: Capturing high-speed sensor telemetry (e.g., vibration, temperature) in ruggedized programmable logic controllers deployed in factory automation.

IC Role / Device Role / Timing Role: Industrial-temperature SRAM providing deterministic write buffering before flash transfer; BWx pins enable timestamp+data atomic writes.

Use Value: –40°C to +85°C rating and 3.3V/2.5V dual-supply operation ensure reliable operation in uncontrolled cabinet environments without derating.

Use Scenario: Temporarily storing high-rate ADC samples (e.g., 10 MS/s × 16-bit) from flight control sensors prior to ARINC-429 packetization.

IC Role / Device Role / Timing Role: Deterministic, jitter-free SRAM buffer with JTAG testability for DO-254 compliance; CEN pin enables synchronized power-down during safe-mode entry.

Use Value: IEEE 1149.1 boundary scan validates interconnect integrity pre-flight, and CEN-controlled suspension meets avionics safe-state transition requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY7C1356BV18-167BZI	128K × 36, 167 MHz, 1.8V core / 1.8V I/O, 119-ball BGA only; no JTAG; different burst control (BWS# instead of BWx).	Targeted at lower-power, space-constrained designs; lacks industrial temp option and byte-write granularity.	Choose when board space is critical and 1.8V system voltage is fixed; avoid if JTAG test or industrial temp is required.
AS7C3256B-15JIN	128K × 32, 15 ns async access, 3.3V only, SOJ-54; no burst, no ZBT, no pipelining; simpler interface but lower performance.	Suitable for legacy control-plane buffers where timing determinism is less critical than cost and ease of use.	Choose for cost-sensitive, non-real-time applications where 166 MHz ZBT™ performance and burst capability are unnecessary.

Compared with CY7C1356BV18-167BZI and AS7C3256B-15JIN, the 71V2556SA133BG uniquely combines industrial temperature support, IEEE 1149.1 JTAG, true ZBT™ zero-turnaround timing, and granular byte-write control in a manufacturable TQFP package-making it optimal for high-reliability, high-throughput embedded buffering where testability and thermal robustness are mandatory.

Availability

71V2556SA133BG is available at Aetrix Electronics and suitable for network packet buffering, telecom line card caching, industrial PLC data logging, and avionics data acquisition requiring stable component supply across extended product lifecycles.

Supply support for 71V2556SA133BG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a semiconductor company specializing in high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.

The 71V2556SA133BG belongs to IDT's ZBT™ SRAM product line, designed specifically for high-speed, low-latency buffering in packet-switched networks and real-time embedded systems demanding deterministic timing and industrial reliability.

FAQ

What does the "SA" suffix in 71V2556SA133BG indicate?

The "SA" suffix denotes the version with optional IEEE 1149.1 JTAG boundary scan capability. Unlike the base "S" variant, the 71V2556SA133BG includes dedicated TMS, TDI, TCK, TDO, and TRST pins (mapped to NC pins on the "S" version) and supports full boundary-scan testing per JTAG standard. This is confirmed in the functional block diagram and pin definitions section of the datasheet.

Does 71V2556SA133BG support both linear and interleaved burst modes?

Yes, the 71V2556SA133BG supports both linear and interleaved 4-word burst sequences. The LBO (Linear/Interleaved Burst Order) pin selects the mode: tied to VSS for linear burst, or to VDD for interleaved burst. This is explicitly defined in the Functional Timing Diagram and Burst Sequence Tables, and verified in the Pin Definitions table where LBO is listed as a dedicated input.

What is the significance of the "133" speed grade in 71V2556SA133BG?

The "133" in 71V2556SA133BG indicates a 133 MHz maximum operating frequency rating. However, the device is also qualified for 166 MHz operation (3.5 ns clock-to-data access) - this higher speed is validated in the Absolute Maximum Ratings and AC Electrical Characteristics tables. The "133" reflects a conservative commercial-grade speed bin; the "166 MHz" performance is guaranteed for industrial-temperature operation per the datasheet's timing specifications.

Can 71V2556SA133BG operate with only VDD powered, or is VDDQ required?

VDDQ is mandatory for correct operation of the 71V2556SA133BG. The device requires separate 3.3V core supply (VDD) and 2.5V I/O supply (VDDQ). The datasheet specifies VDDQ = 2.5 V ±10% in Recommended DC Operating Conditions, and states that I/O pins are referenced to VDDQ. Omitting VDDQ will result in undefined I/O behavior and potential damage, as confirmed in the Absolute Maximum Ratings and Pin Configuration notes.

Is the 71V2556SA133BG pin-compatible with other members of the 71V2556 family?

The 71V2556SA133BG shares identical pinout and package (100-pin TQFP) with all 71V2556Sx variants in the same PKG100 configuration, including 71V2556S133BG and 71V2556S166BG. Pin mappings for address, data, control, and power are consistent across the family. Differences exist only in speed grade and feature enablement (e.g., JTAG presence), not physical connectivity - verified via direct comparison of Pin Configuration diagrams and Pin Definitions tables.

71V2556SA133BG Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 119-BGA

Packaging:: Tray

Product Status:: Active

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous, SDR (ZBT)

Memory Size:: 4.5Mbit

Memory Organization:: 128K x 36

Memory Interface:: Parallel

Clock Frequency:: 133 MHz

Write Cycle Time - Word, Page:: -

Access Time:: 4.2 ns

Voltage - Supply:: 3.135V ~ 3.465V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 119-PBGA (14x22)

71V2556SA133BG FAQ

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The price and inventory of 71V2556SA133BG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V2556SA133BG is usually 5 days.

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5.How can I obtain technical support or documentation for 71V2556SA133BG?

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6.How does Aetrix verify that 71V2556SA133BG is sourced from the original manufacturer or authorized distributors?

All 71V2556SA133BG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V2556SA133BG meets industry standards.

7.What is the process for return or replacement of 71V2556SA133BG?

All 71V2556SA133BG units undergo pre-shipment inspection (PSI). If there is an issue with 71V2556SA133BG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V2556SA133BG part is unused and in its original packaging.

Return procedure for 71V2556SA133BG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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