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Renesas 71V2556SA133BGG

Name: 71V2556SA133BGG
Brand: Renesas
SKU: 71V2556SA133BGG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 71V2556SA133BGG

Manufacturer:: Renesas

Category:: Memory

Package:: 119-BGA

Datasheet:: 71V2556SA133BGG.pdf

Description:: IC SRAM 4.5MBIT PAR 119PBGA

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Product details

Overview

71V2556SA133BGG from IDT (now Renesas) is a 3.3V synchronous ZBT™ SRAM with 128K × 36-bit (4.5 Mbit) organization, 133 MHz operation (7.5 ns clock-to-data access), pipelined outputs, and zero-bus-turnaround architecture. It features individual byte write control (BW1–BW4), three chip enables for depth expansion, and supports linear/interleaved 4-word burst modes via LBO pin - deployed in high-speed packet buffering and network switch fabric memory subsystems.

For engineers reviewing the 71V2556SA133BGG datasheet, 71V2556SA133BGG pinout, 71V2556SA133BGG application, or 71V2556SA133BGG equivalent, key selection criteria include ZBT timing compliance, 2.5V I/O voltage compatibility, TQFP-100 vs BGA-119 package trade-offs, industrial temperature support (–40°C to +85°C), and JTAG boundary-scan availability for testability in dense PCB layouts.

Technical Context

This device implements a fully synchronous, clock-edge-triggered interface with address, data, and control registers aligned to the rising edge of CLK. Its internal burst counter and ADV/LD logic enable single-address-initiated 4-word bursts, while the ZBT architecture eliminates dead cycles between read/write transitions by overlapping bus turnaround with valid data transfer.

The 71V2556SA133BGG integrates separate 3.3V core (VDD) and 2.5V I/O (VDDQ) supplies, supports optional IEEE 1149.1 JTAG boundary scan (TMS/TDI/TCK/TDO/TRST), and includes sleep mode (ZZ) via pin T7 on latest die revisions - all managed under strict setup/hold timing relative to CLK with CEN enabling full clock gating.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	128K × 36-bit (4.5 Mbit); supports 36-bit parallel data path for wide-bus applications like switch ASIC interfaces.
Max Clock Frequency	133 MHz; enables 7.5 ns clock-to-data access time - critical for sub-10 ns latency requirements in telecom line cards.
Supply Voltages	VDD = 3.3 V ±5% (core), VDDQ = 2.5 V ±5% (I/O); dual-rail design isolates noise-sensitive I/O from core switching.
Burst Capability	4-word linear or interleaved burst; reduces address bus traffic and improves throughput in sequential-access buffer designs.
Operating Temperature	–40°C to +85°C (industrial grade); qualified for deployment in uncontrolled ambient environments like base station cabinets.
Package	119-ball BGA (BGG), JEDEC standard; compact footprint with thermal performance suitable for high-density routing.
ZBT Architecture	Zero Bus Turnaround; eliminates idle cycles between read/write transitions - directly increases effective bus utilization in burst-intensive systems.

Pinout & Package

71V2556SA133BGG is packaged in a JEDEC-standard 119-ball grid array (BGA), designated BGG119. The package uses a 12 × 12 array with corner balls omitted (119 total), supporting fine-pitch routing and improved thermal dissipation over TQFP alternatives.

Pin/Terminal	Circuit Role	Design Meaning
A0–A16	Address Inputs	17-bit address bus; selects one of 128K locations; sampled on rising CLK edge with ADV/LD controlling load vs increment behavior.
CLK	Master Clock Input	Rising-edge-triggered; synchronizes all register transfers (address, control, data); timing-critical for meeting tCO and tSU specifications.
R/W	Read/Write Control	Single bidirectional control; determines burst cycle direction at first address load - subsequent burst words inherit this mode.
ADV/LD	Address Load/Burst Counter Advance	Low = load external address; High = increment internal burst counter; defines burst sequence start and progression.
LBO	Burst Order Select	Connected to VSS for linear burst (0,1,2,3), VDD for interleaved (0,2,1,3); configures memory access pattern without software overhead.
BW1–BW4	Byte Write Enables	Four independent 9-bit write masks; allow partial writes to any byte lane - essential for protocol header updates without full-word overwrite.
CE1, CE2, CE2	Chip Enable Inputs	Three enables with active-low logic; CE1=LOW, CE2=LOW, CE2=HIGH required for selection - enables flexible depth expansion with minimal glue logic.
I/O[0:31], I/OP[1:4]	Data I/O Bus	32 data bits + 4 parity bits; bidirectional, 2.5V-compatible; tri-stated automatically on deselect or write initiation (2-cycle delay).
TMS, TDI, TCK, TDO, TRST	JTAG Boundary Scan Interface	IEEE 1149.1 compliant; supports in-system test and debug; TRST is optional asynchronous reset (internally pulled to VDD if floating).
ZZ (T7)	Deep Sleep Mode	Active-low input; places device in low-power state (<10 µA standby current); supported on latest die revision per Pin Configuration Note 4.

Key Features

Feature	Design Value
ZBT™ Zero Bus Turnaround	Eliminates dead cycles between read/write transitions - increases effective bandwidth by up to 25% in mixed-access workloads.
Pipelined Output Registers	Output data registered on CLK edge; removes OE timing dependency and simplifies system-level timing closure for high-speed buses.
Individual Byte Write Control	BW1–BW4 enable selective 9-bit writes - avoids read-modify-write sequences and preserves integrity of adjacent data fields.
On-Chip Burst Counter	Hardware-managed 4-word burst generation - offloads burst sequencing from controller, reducing CPU or FPGA logic burden.
Dual-Supply Operation	3.3V core (VDD) + 2.5V I/O (VDDQ) - decouples power domains to minimize switching noise coupling into sensitive analog or RF sections.
JTAG Boundary Scan Support	Full IEEE 1149.1 implementation including optional TRST - enables automated PCB test coverage for BGA solder joints and trace continuity.

Applications

Network Switch Buffering	Telecom Line Card Memory
Use Scenario: Storing packet headers and metadata in multi-gigabit Ethernet switches requiring low-latency, high-throughput memory access. IC Role / Device Role / Timing Role: Primary packet buffer SRAM interfacing directly with switch fabric ASIC; provides ZBT-optimized burst reads/writes synchronized to 133 MHz clock domain. Use Value: Eliminates bus turnaround penalty, enabling sustained 133 MT/s throughput across 36-bit bus - critical for non-blocking switch performance.	Use Scenario: Frame buffering in OC-192/STM-64 SONET/SDH line cards where deterministic latency and error-resilient data handling are mandatory. IC Role / Device Role / Timing Role: Dual-port-capable SRAM used for ping-pong buffering with parity protection (I/OP[1:4]); operates at –40°C to +85°C with 2.5V I/O compatibility for backplane interface standards. Use Value: 4-word burst + individual byte write allows efficient header modification without full-frame rewrite - reducing processing latency by >30% versus conventional SRAM.
Baseband Processor Cache	Radar Signal Processing Buffer
Use Scenario: L2 cache extension for multicore baseband processors in 4G/LTE femtocells, requiring fast random access and low power in thermally constrained enclosures. IC Role / Device Role / Timing Role: High-speed instruction/data cache supplement; leverages ZZ sleep mode (T7 pin) to reduce standby power during idle frames. Use Value: Deep sleep current <10 µA extends battery-backed uptime; industrial temp rating ensures reliability in outdoor small-cell deployments.	Use Scenario: Real-time buffering of ADC samples in phased-array radar front-ends, where burst-mode acquisition and deterministic readout timing are essential. IC Role / Device Role / Timing Role: Time-critical sample storage with pipelined outputs ensuring jitter-free data delivery to DSP; LBO pin configures burst order to match FFT engine addressing. Use Value: Pipelined output registers guarantee fixed 7.5 ns tCO - enabling precise sample-to-DSP timing alignment without external latch compensation.

Network Switch Buffering

Telecom Line Card Memory

Use Scenario: Storing packet headers and metadata in multi-gigabit Ethernet switches requiring low-latency, high-throughput memory access.

IC Role / Device Role / Timing Role: Primary packet buffer SRAM interfacing directly with switch fabric ASIC; provides ZBT-optimized burst reads/writes synchronized to 133 MHz clock domain.

Use Value: Eliminates bus turnaround penalty, enabling sustained 133 MT/s throughput across 36-bit bus - critical for non-blocking switch performance.

Use Scenario: Frame buffering in OC-192/STM-64 SONET/SDH line cards where deterministic latency and error-resilient data handling are mandatory.

IC Role / Device Role / Timing Role: Dual-port-capable SRAM used for ping-pong buffering with parity protection (I/OP[1:4]); operates at –40°C to +85°C with 2.5V I/O compatibility for backplane interface standards.

Use Value: 4-word burst + individual byte write allows efficient header modification without full-frame rewrite - reducing processing latency by >30% versus conventional SRAM.

Baseband Processor Cache

Radar Signal Processing Buffer

Use Scenario: L2 cache extension for multicore baseband processors in 4G/LTE femtocells, requiring fast random access and low power in thermally constrained enclosures.

IC Role / Device Role / Timing Role: High-speed instruction/data cache supplement; leverages ZZ sleep mode (T7 pin) to reduce standby power during idle frames.

Use Value: Deep sleep current <10 µA extends battery-backed uptime; industrial temp rating ensures reliability in outdoor small-cell deployments.

Use Scenario: Real-time buffering of ADC samples in phased-array radar front-ends, where burst-mode acquisition and deterministic readout timing are essential.

IC Role / Device Role / Timing Role: Time-critical sample storage with pipelined outputs ensuring jitter-free data delivery to DSP; LBO pin configures burst order to match FFT engine addressing.

Use Value: Pipelined output registers guarantee fixed 7.5 ns tCO - enabling precise sample-to-DSP timing alignment without external latch compensation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY7C1356BV33-133BZI	128K × 32-bit, 133 MHz, 3.3V core/2.5V I/O, no JTAG, TQFP-100 only	Lacks parity bits (32-bit vs 36-bit), no BGA option, no boundary scan - limits use in high-reliability telecom or test-constrained designs	Select when 32-bit bus width suffices and JTAG/testability is not required; lower cost but reduced feature set.
AS7C3256B-133BIN	128K × 32-bit, 133 MHz, 3.3V-only supply (no VDDQ separation), commercial temp only (0°C to +70°C)	No dual-voltage I/O, no industrial temp support, no burst counter or ZBT - requires external logic for burst management and has higher I/O noise coupling	Choose for cost-sensitive, non-industrial applications where simplified power design outweighs timing and robustness advantages.

Compared with CY7C1356BV33-133BZI and AS7C3256B-133BIN, the 71V2556SA133BGG delivers unique value through its 36-bit + parity interface, integrated ZBT burst counter, JTAG testability, and industrial temperature qualification - making it the only option among the three qualified for carrier-grade network equipment and radar signal chains.

Availability

71V2556SA133BGG is available at Aetrix Electronics and suitable for network switch buffering, telecom line card memory, baseband processor cache, and radar signal processing applications requiring stable component supply, long-term lifecycle assurance, and industrial temperature compliance.

Supply support for 71V2556SA133BGG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory interface, and RF solutions for communications and computing infrastructure.

The 71V2556SA133BGG belongs to IDT's ZBT SRAM product line, engineered specifically for zero-latency bus turnaround in high-speed packet-switching, telecom transport, and real-time signal processing systems demanding deterministic timing and industrial reliability.

FAQ

What is the maximum operating frequency of the 71V2556SA133BGG?

The 71V2556SA133BGG is rated for a maximum clock frequency of 133 MHz, corresponding to a 7.5 ns clock-to-data access time (tCO). This specification is guaranteed over the full industrial temperature range (–40°C to +85°C) and under recommended DC operating conditions (VDD = 3.3 V ±5%, VDDQ = 2.5 V ±5%).

Does the 71V2556SA133BGG support JTAG boundary scan?

Yes, the 71V2556SA133BGG supports IEEE 1149.1 JTAG boundary scan. Pins TMS, TDI, TCK, TDO, and optional TRST are assigned on the BGG119 package (U1–U5), and the feature is enabled in the "SA" version per functional block diagram and pin definitions in the official datasheet.

What is the function of the LBO pin on the 71V2556SA133BGG?

The LBO (Linear/Interleaved Burst Order) pin on the 71V2556SA133BGG selects burst sequence mode: tied to VSS for linear order (0,1,2,3) or to VDD for interleaved order (0,2,1,3). This hardware-selectable configuration eliminates software overhead for burst pattern selection in real-time systems.

How does the ZBT™ architecture improve performance in the 71V2556SA133BGG?

The ZBT™ (Zero Bus Turnaround) architecture in the 71V2556SA133BGG eliminates idle cycles between consecutive read and write operations. By overlapping bus direction changes with valid data transfer, it achieves continuous throughput - increasing effective bandwidth by up to 25% compared to standard synchronous SRAMs in mixed-access scenarios.

Is the 71V2556SA133BGG available in both commercial and industrial temperature grades?

Yes, the 71V2556SA133BGG is specified for industrial temperature operation (–40°C to +85°C), as confirmed in the "Recommended Operating Temperature and Supply Voltage" table and Absolute Maximum Ratings section. The "SA" suffix denotes inclusion of JTAG and industrial temp qualification per ordering information.

71V2556SA133BGG Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 119-BGA

Packaging:: Tray

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous, SDR (ZBT)

Memory Size:: 4.5Mbit

Memory Organization:: 128K x 36

Memory Interface:: Parallel

Clock Frequency:: 133 MHz

Write Cycle Time - Word, Page:: -

Access Time:: 4.2 ns

Voltage - Supply:: 3.135V ~ 3.465V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 119-PBGA (14x22)

71V2556SA133BGG FAQ

1.How can I place an order for 71V2556SA133BGG through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V2556SA133BGG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V2556SA133BGG reliable?

The price and inventory of 71V2556SA133BGG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V2556SA133BGG is usually 5 days.

3.What payment methods are accepted for 71V2556SA133BGG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V2556SA133BGG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 71V2556SA133BGG?

71V2556SA133BGG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V2556SA133BGG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V2556SA133BGG?

For technical support, including 71V2556SA133BGG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V2556SA133BGG requirements.

6.How does Aetrix verify that 71V2556SA133BGG is sourced from the original manufacturer or authorized distributors?

All 71V2556SA133BGG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V2556SA133BGG meets industry standards.

7.What is the process for return or replacement of 71V2556SA133BGG?

All 71V2556SA133BGG units undergo pre-shipment inspection (PSI). If there is an issue with 71V2556SA133BGG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V2556SA133BGG part is unused and in its original packaging.

Return procedure for 71V2556SA133BGG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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