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Renesas 71V2556SA133BGI

Part No.:
71V2556SA133BGI
Manufacturer:
Renesas
Category:
Memory
Package:
119-BGA
Datasheet:
Aetrix71V2556SA133BGI.pdf
Description:
IC SRAM 4.5MBIT PAR 119PBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,967

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Product details

Overview

71V2556SA133BGI from IDT (now Renesas) is a 128K × 36-bit (4.5 Mbit), 3.3V synchronous ZBT™ SRAM with 2.5V I/O, pipelined outputs, and zero-bus-turnaround architecture. It delivers 166 MHz operation (3.5 ns clock-to-data access), supports 4-word linear/interleaved burst modes via internal counter, and features individual byte write (BW1–BW4), three chip enables (CE1/CE2/CE2), and optional IEEE 1149.1 JTAG for boundary scan. It is used in high-speed packet buffering and cache applications in networking line cards.

For engineers reviewing the 71V2556SA133BGI datasheet, 71V2556SA133BGI pinout, 71V2556SA133BGI application, or 71V2556SA133BGI equivalent, key selection considerations include its ZBT™ timing behavior, 100-pin TQFP industrial-grade packaging, 3.3V core / 2.5V I/O supply separation, burst counter control via ADV/LD and LBO, and compatibility with pipelined memory controllers requiring dead-cycle elimination between read/write transitions.

Technical Context

The 71V2556SA133BGI implements a fully synchronous, clock-edge-triggered architecture with input registers for address, data, and control signals. Its ZBT™ operation eliminates bus turnaround latency by enabling immediate read-after-write or write-after-read transitions without idle cycles.

It integrates a 4-word burst counter controlled by ADV/LD and LBO pins to generate sequential addresses; supports both linear and interleaved burst orders; and includes an internally synchronized output buffer enable (OE) that removes external timing constraints on output control. The device also provides optional JTAG test access compliant with IEEE 1149.1.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization 128K × 36-bit (4.5 Mbit); supports 36-bit parallel data path for wide-bus systems.
Max Clock Frequency 166 MHz; enables 3.5 ns clock-to-data access time for real-time buffering in telecom/datacom.
Supply Voltages VDD = 3.3 V ±5% (core), VDDQ = 2.5 V ±5% (I/O); independent power domains reduce noise coupling.
Burst Capability 4-word burst (linear or interleaved); reduces address bus traffic and controller overhead per transaction.
Operating Temperature –40°C to +85°C; qualified for industrial environments including base station and router hardware.
Package 100-pin TQFP (14 mm × 20 mm, JEDEC standard); surface-mount compatible with automated assembly.
JTAG Support IEEE 1149.1-compliant optional interface (TMS/TDI/TCK/TDO/TRST); enables boundary-scan testing in dense PCBs.

Pinout & Package

Packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pin 1 marked by corner notch; top-view orientation as defined in datasheet drawing 4875 drw 02.

Pin Circuit Role Design Meaning
A0–A16 Address Input 17-bit address bus; selects one of 128K locations; sampled on rising CLK edge.
CLK System Clock Input Positive-edge-triggered master clock; synchronizes all register transfers and burst sequencing.
R/W Read/Write Control Single pin determines cycle direction; status at first address load defines entire burst sequence.
ADV/LD Address Load/Burst Advance Low = load external address; High = increment internal burst counter; controls burst address generation.
LBO Burst Order Select Low = linear burst (0,1,2,3); High = interleaved burst (0,2,1,3); sets burst address mapping.
CE1, CE2, CE2 Chip Enable Inputs Three independent enables; any false condition deselects device; pending transfers complete before tri-state.
BW1–BW4 Byte Write Enables Four independent 9-bit write masks; allow partial writes without read-modify-write overhead.
I/O0–I/O31, I/OP1–I/OP4 Data I/O Bus 36-bit bidirectional data path (32 data + 4 parity); operates at 2.5V I/O voltage level.
CEN Clock Enable High = suspend all synchronous operation; registers retain state; no clock propagation through logic.
OE Output Enable Asynchronous active-low control; disables outputs independently of clock or burst state.
VDD, VDDQ, VSS Power Supply Pins VDD (3.3V core), VDDQ (2.5V I/O), VSS (ground); multiple dedicated pins ensure low-impedance distribution.
TMS, TDI, TCK, TDO, TRST JTAG Test Interface IEEE 1149.1 boundary-scan signals; TRST optional reset; all pulled internally if unused.

Key Features

Feature Design Value
ZBT™ Zero Bus Turnaround Eliminates dead cycles between consecutive read/write operations, enabling continuous data flow in burst pipelines.
Internally Synchronized OE Removes setup/hold timing constraints on OE signal, simplifying system-level timing closure for output control.
4-Word Burst Counter Reduces address bus activity and controller complexity by generating sequential addresses internally per burst command.
Individual Byte Write Control Enables precise 9-bit granularity writes (BW1–BW4), avoiding full-word overwrites and preserving unmodified data.
Three Chip Enables Supports depth expansion across multiple devices without external logic; flexible bank selection in memory subsystems.
Industrial Temperature Range Rated for –40°C to +85°C operation, ensuring reliability in carrier-grade and outdoor infrastructure equipment.

Applications

Network Packet Buffering High-Speed Cache Memory

Use Scenario: Storing ingress/egress packets in Ethernet switches and routers with line-rate throughput requirements.

IC Role / Device Role / Timing Role: Primary burst-access buffer interfacing directly with MAC or switch fabric controllers using pipelined clocking.

Use Value: ZBT™ architecture enables back-to-back read/write bursts at 166 MHz, eliminating inter-packet gaps and maximizing link utilization.

Use Scenario: Serving as Level 2 (L2) cache for network processors or DSPs executing real-time protocol stacks.

IC Role / Device Role / Timing Role: Low-latency, wide-data-path cache memory supporting 36-bit aligned fetch/store operations.

Use Value: 3.5 ns clock-to-data access and 4-word burst mode reduce average instruction fetch latency versus asynchronous SRAMs.

Telecom Line Card Memory Test Equipment Data Capture

Use Scenario: Buffering frame payloads in SONET/SDH add-drop multiplexers and optical transport platforms.

IC Role / Device Role / Timing Role: Synchronous SRAM providing deterministic, jitter-free data staging between framer and backplane interfaces.

Use Value: Industrial temperature rating and 100-pin TQFP package support long-term reliability in fanless, conduction-cooled chassis.

Use Scenario: Capturing high-speed digital waveforms in automated test equipment (ATE) and logic analyzers.

IC Role / Device Role / Timing Role: Deep, fast-access memory capturing parallel bus data at multi-hundred-MHz sampling rates.

Use Value: Independent byte write enables selective storage of valid nibbles/bytes during glitchy or incomplete bus cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C1356BV33-133AXC 128K × 36-bit, 133 MHz max, 3.3V core/2.5V I/O, same TQFP-100 package but no JTAG option. Lacks IEEE 1149.1 boundary scan; lower max frequency limits use in 166 MHz systems. Select when JTAG testability is unnecessary and 133 MHz timing suffices for controller interface.
AS7C33128P-133BIN 128K × 36-bit, 133 MHz, 3.3V-only supply (no separate VDDQ), TQFP-100, no burst counter or ZBT™ mode. Requires external burst logic; lacks zero-turnaround capability and 2.5V I/O isolation. Choose only for cost-sensitive designs where ZBT™ timing and I/O voltage separation are not required.

Compared with CY7C1356BV33-133AXC and AS7C33128P-133BIN, the 71V2556SA133BGI uniquely delivers 166 MHz ZBT™ operation with integrated burst counter and IEEE 1149.1 JTAG-enabling higher throughput, simpler controller design, and production testability in demanding infrastructure applications.

Availability

71V2556SA133BGI is available at Aetrix Electronics and suitable for network packet buffering, high-speed cache memory, telecom line card memory, and test equipment data capture requiring stable component supply across extended industrial temperature ranges.

Supply support for 71V2556SA133BGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a semiconductor company specializing in high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.

The 71V2556SA133BGI belongs to IDT's ZBT™ SRAM product line, designed specifically for zero-latency, high-throughput memory subsystems in networking and telecom infrastructure where deterministic burst access and bus turnaround elimination are critical.

FAQ

What does the 'SA' suffix in 71V2556SA133BGI indicate?

The 'SA' suffix denotes the version with optional IEEE 1149.1 JTAG boundary-scan capability. Unlike the base 'S' variant, the 71V2556SA133BGI includes functional TMS, TDI, TCK, TDO, and TRST pins routed to dedicated package balls in the 100-pin TQFP, enabling in-system test and debug of PCB interconnects.

How does the ZBT™ feature of the 71V2556SA133BGI eliminate dead cycles?

The 71V2556SA133BGI's ZBT™ architecture allows immediate transition from a write cycle to a read cycle (or vice versa) without inserting idle clock cycles. This is achieved through internal pipeline staging and synchronized output enable, ensuring the bus remains active and data flows continuously-critical for line-rate packet processing.

Can the 71V2556SA133BGI operate with only VDD powered, leaving VDDQ unconnected?

No. The 71V2556SA133BGI requires both VDD (3.3V ±5%) and VDDQ (2.5V ±5%) to be actively supplied within specification. I/O drivers and input receivers depend on VDDQ; operating without it risks undefined data states, excessive current draw, or permanent damage per Absolute Maximum Ratings.

What is the function of the ADV/LD and LBO pins on the 71V2556SA133BGI?

ADV/LD controls the burst counter: LOW loads an external address; HIGH increments the internal counter. LBO selects burst order: LOW enables linear sequence (0,1,2,3); HIGH enables interleaved (0,2,1,3). Together, they define how the 71V2556SA133BGI generates four sequential addresses per burst command.

Is the 71V2556SA133BGI pin-compatible with other members of the 71V2556 family?

Yes-the 71V2556SA133BGI shares identical pinout and footprint with other 100-pin TQFP variants in the 71V2556 family (e.g., 71V2556S133BG, 71V2556SA100BGI). Differences lie in speed grade, temperature range, and JTAG inclusion-not physical layout-enabling drop-in replacement where timing and feature requirements align.

71V2556SA133BGI Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
119-BGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR (ZBT)
Memory Size:
4.5Mbit
Memory Organization:
128K x 36
Memory Interface:
Parallel
Clock Frequency:
133 MHz
Write Cycle Time - Word, Page:
-
Access Time:
4.2 ns
Voltage - Supply:
3.135V ~ 3.465V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
119-PBGA (14x22)

71V2556SA133BGI FAQ

1.How can I place an order for 71V2556SA133BGI through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V2556SA133BGI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V2556SA133BGI reliable?

The price and inventory of 71V2556SA133BGI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V2556SA133BGI is usually 5 days.

3.What payment methods are accepted for 71V2556SA133BGI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V2556SA133BGI transactions.

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4.How is shipping managed for 71V2556SA133BGI?

71V2556SA133BGI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V2556SA133BGI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V2556SA133BGI?

For technical support, including 71V2556SA133BGI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V2556SA133BGI requirements.

6.How does Aetrix verify that 71V2556SA133BGI is sourced from the original manufacturer or authorized distributors?

All 71V2556SA133BGI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V2556SA133BGI meets industry standards.

7.What is the process for return or replacement of 71V2556SA133BGI?

All 71V2556SA133BGI units undergo pre-shipment inspection (PSI). If there is an issue with 71V2556SA133BGI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V2556SA133BGI part is unused and in its original packaging.

Return procedure for 71V2556SA133BGI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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