Renesas 71V256SA12PZG8
- Part No.:
- 71V256SA12PZG8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 28-TSSOP (0.465", 11.80mm Width)
- Datasheet:
-
71V256SA12PZG8.pdf
- Description:
- IC SRAM 256KBIT PARALLEL 28TSOP
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
71V256SA12PZG8 from Renesas Electronics is a 256K (32K × 8-bit) high-speed CMOS static RAM with 12 ns access time, single 3.3 V ±0.3 V supply, LVTTL-compatible I/O, and industrial-grade reliability in TSOP-28 package. It serves as secondary cache memory in 3.3 V desktop and embedded systems requiring fast, low-power, non-volatile data retention during standby.
For engineers reviewing the 71V256SA12PZG8 datasheet, 71V256SA12PZG8 pinout, 71V256SA12PZG8 application, or 71V256SA12PZG8 equivalent, this SRAM delivers deterministic 12 ns read timing, sub-2 mA full-standby current, TTL-level control interface compatibility, and verified operation across 0°C to +70°C commercial temperature range - critical for cache subsystem validation and power-sensitive board design.
Technical Context
The 71V256SA12PZG8 implements a fully decoded 15-bit address space (A0–A14) driving a 262,144-bit memory array with byte-wide bidirectional I/O (I/O0–I/O7). Its control logic uses three independent active-low enables - CS, WE, and OE - supporting both chip-select– and write-enable–controlled read/write cycles with defined timing overlap requirements (e.g., tDW = 6 ns minimum).
Power management is hardware-driven: asserting CS HIGH places the device into TTL-level standby (ISB ≤ 20 mA), while holding CS at CMOS HIGH (VIH ≥ VCC − 0.2 V) with f = 0 achieves full standby (ISB1 ≤ 2 mA, P ≤ 6.6 mW). All inputs and outputs meet LVTTL voltage thresholds (VIH = 2.0 V min, VIL = 0.8 V max) and drive capability (IOH = −4 mA, IOL = 8 mA).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 32K × 8-bit (262,144 bits), enabling byte-aligned data access without external data masking |
| Access Time (tAA) | 12 ns maximum - guarantees sub-83 MHz read throughput in synchronous cache interfaces |
| Supply Voltage | 3.3 V ±0.3 V - compatible with standard 3.3 V logic rails and eliminates need for level-shifting circuitry |
| Standby Current (ISB1) | ≤2 mA at full standby - extends battery life in portable or low-power embedded systems |
| Operating Temperature | 0°C to +70°C - validated for commercial desktop, networking, and industrial control applications |
| Package | 28-pin TSOP Type I (PZG28), 8.1 mm × 13.4 mm footprint - supports high-density PCB layouts |
| I/O Interface | LVTTL-compatible inputs/outputs - ensures direct interfacing with Intel Pentium, AMD K6, and FPGA I/O banks |
Pinout & Package
71V256SA12PZG8 is housed in a 28-pin TSOP Type I (PZG28) package with 0.5 mm pitch and JEDEC-standard pinout. The package supports automated surface-mount assembly and provides thermal performance suitable for sustained 12 ns operation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address Inputs | 15-bit unidirectional address bus accepting 0–32767 row/column selection; no internal latching |
| I/O0–I/O7 | Bidirectional Data Bus | 8-bit shared input/output lines with tristate control; requires external direction management via WE/OE |
| CS | Chip Select | Active-low enable controlling device activation and automatic entry into standby when HIGH |
| WE | Write Enable | Active-low signal determining write cycle initiation; must overlap LOW CS for valid write |
| OE | Output Enable | Active-low control for output drivers; disables I/O pins to high-impedance when deasserted |
| VCC | Power Supply | +3.3 V ±0.3 V main supply; decoupling required within 10 mm of pin per high-speed SRAM layout guidelines |
| GND | Ground Reference | Signal and power return path; requires dedicated low-inductance plane connection |
Key Features
| Feature | Design Value |
|---|---|
| 12 ns Access Time | Enables use as Level 2 cache in 3.3 V CPU platforms without wait states, matching Pentium-class timing budgets |
| Sub-2 mA Full Standby Current | Reduces system quiescent power by >90% vs. active mode, critical for fanless or thermally constrained designs |
| LVTTL-Compatible I/O | Eliminates need for external bus transceivers when interfacing with 3.3 V microprocessors and FPGAs |
| CMOS-Level Standby Entry | Allows ultra-low-power sleep modes using standard GPIOs without additional voltage translation |
| TSOP-28 Package | Provides 35% smaller footprint than SOJ-28, improving routing density in space-constrained embedded modules |
Applications
| Desktop CPU Secondary Cache | Industrial PLC Data Buffer |
|---|---|
|
Use Scenario: High-speed temporary storage for instruction/data prefetch between CPU and main DRAM in legacy x86 desktop systems. IC Role / Device Role / Timing Role: Asynchronous SRAM acting as write-through or write-back cache with 12 ns tAA ensuring zero-wait-state operation at 83 MHz bus clock. Use Value: Reduces average memory access latency by 4× compared to DRAM-only architectures, sustaining >300 MB/s bandwidth under burst reads. |
Use Scenario: Real-time buffering of sensor acquisition data in programmable logic controllers operating in factory-floor environments. IC Role / Device Role / Timing Role: Non-volatile shadow RAM storing configuration registers and last-known-good state during brownout events. Use Value: Maintains data integrity across 100+ ms power interruptions due to ISB1 ≤ 2 mA draw and fast wake-up (<100 ns tCLZ). |
| Network Switch Packet Buffer | Medical Imaging Frame Store |
|
Use Scenario: Temporary packet queuing in Layer 2 Ethernet switches handling 100 Mbps–1 Gbps line rates. IC Role / Device Role / Timing Role: Dual-port emulated buffer using external arbitration logic to support concurrent ingress/egress traffic streams. Use Value: Achieves <5 µs round-trip latency per 256-byte packet via deterministic 12 ns read/write cycles and tWP = 9 ns write pulse width. |
Use Scenario: Intermediate frame storage in portable ultrasound devices capturing real-time B-mode image sequences. IC Role / Device Role / Timing Role: Low-noise, low-power memory bank holding 1–2 uncompressed frames (up to 256 KB) before compression and transmission. Use Value: Enables battery operation >4 hours per charge by limiting active-mode ICC ≤ 90 mA and leveraging ISB1 ≤ 2 mA during idle scan intervals. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62256ELL-12ZXI | 12 ns access, 32K × 8, but uses 5 V supply and has higher ISB1 (5 mA); TSOP-28 package identical | Requires level-shifting for 3.3 V systems; unsuitable for battery-powered designs due to 2.5× higher standby draw | Select only if legacy 5 V infrastructure exists and power budget allows |
| AS6C4008-12TIN | 12 ns access, same 32K × 8 organization and 3.3 V supply, but rated for −40°C to +85°C industrial grade | Validated for extended temperature operation; lacks green (RoHS-compliant) marking option available on 71V256SA12PZG8 | Prefer for harsh-environment deployments where commercial-grade 0°C–70°C is insufficient |
Compared with CY62256ELL-12ZXI and AS6C4008-12TIN, the 71V256SA12PZG8 uniquely balances 12 ns speed, 3.3 V compatibility, sub-2 mA standby, and RoHS-compliant green packaging - making it optimal for cost-sensitive, power-constrained commercial desktop and embedded applications where industrial temp range is not required.
Availability
71V256SA12PZG8 is available at Aetrix Electronics and suitable for desktop CPU cache subsystems, industrial PLC data buffers, and network switch packet queues requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.
Supply support for 71V256SA12PZG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and enterprise applications.
The 71V256SA series was designed specifically for high-performance, low-power 3.3 V static RAM applications in CPU cache, networking, and real-time control systems - emphasizing speed, reliability, and seamless integration with LVTTL logic families.
FAQ
What is the maximum guaranteed access time for the 71V256SA12PZG8?
The 71V256SA12PZG8 has a maximum guaranteed address access time (tAA) of 12 ns across the full commercial temperature range (0°C to +70°C) and supply voltage (3.0 V to 3.6 V). This value is production-tested and specified in the AC Electrical Characteristics table of the Renesas datasheet, ensuring deterministic timing for cache and buffer applications without wait-state insertion.
Does the 71V256SA12PZG8 support true low-power standby mode?
Yes, the 71V256SA12PZG8 supports two standby modes: TTL-level standby (ISB ≤ 20 mA) when CS is driven to VIH, and full CMOS-level standby (ISB1 ≤ 2 mA) when CS is held above VCC − 0.2 V with no input transitions. The latter guarantees power dissipation ≤ 6.6 mW and is ideal for battery-backed or energy-harvesting systems where microamp-level leakage is unacceptable.
Is the 71V256SA12PZG8 pin-compatible with other 28-pin TSOP SRAMs?
The 71V256SA12PZG8 follows JEDEC-standard TSOP-28 pinout for 32K × 8 SRAMs (e.g., A0–A14, I/O0–I/O7, CS, WE, OE, VCC, GND), making it mechanically and electrically compatible with industry-standard footprints. However, timing parameters and DC characteristics differ across vendors - always verify tRC, tWP, and ISB1 values before substitution.
What is the operating voltage range for the 71V256SA12PZG8?
The 71V256SA12PZG8 operates over a supply voltage range of 3.0 V to 3.6 V, centered on 3.3 V ±0.3 V. This range is validated across all AC and DC specifications including tAA = 12 ns, ICC ≤ 90 mA, and VOH ≥ 2.4 V, ensuring robust functionality in noisy or marginally regulated 3.3 V power domains common in desktop and embedded motherboards.
Does the 71V256SA12PZG8 require external refresh circuitry?
No, the 71V256SA12PZG8 is a static RAM and does not require external refresh circuitry. Its CMOS latch-based memory cells retain data indefinitely as long as VCC remains within specification and CS is not asserted in a way that induces unintended write cycles. This eliminates refresh overhead and simplifies controller design versus DRAM-based solutions.
71V256SA12PZG8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 28-TSSOP (0.465", 11.80mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 256Kbit
- Memory Organization:
- 32K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 12ns
- Access Time:
- 12 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 28-TSOP
71V256SA12PZG8 FAQ
1.How can I place an order for 71V256SA12PZG8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V256SA12PZG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V256SA12PZG8 reliable?
The price and inventory of 71V256SA12PZG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V256SA12PZG8 is usually 5 days.
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71V256SA12PZG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V256SA12PZG8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V256SA12PZG8?
For technical support, including 71V256SA12PZG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V256SA12PZG8 requirements.
6.How does Aetrix verify that 71V256SA12PZG8 is sourced from the original manufacturer or authorized distributors?
All 71V256SA12PZG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V256SA12PZG8 meets industry standards.
7.What is the process for return or replacement of 71V256SA12PZG8?
All 71V256SA12PZG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V256SA12PZG8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V256SA12PZG8 part is unused and in its original packaging.
Return procedure for 71V256SA12PZG8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V256SA12PZG8 Tags

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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology

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AT21CS01-STUM10-T
Microchip Technology

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AT24C02C-SSHM-T
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24LC01BT-I/OT
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M24C02-FMC6TG
STMicroelectronics

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AT24CS02-SSHM-T
Microchip Technology

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93LC46BT-I/OT
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AT24C04C-SSHM-T
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24LC01BT-I/SN
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24AA02UIDT-I/OT
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AT24C08C-STUM-T
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