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Renesas 71V256SA12YG

Part No.:
71V256SA12YG
Manufacturer:
Renesas
Category:
Memory
Package:
28-BSOJ (0.300", 7.62mm Width)
Datasheet:
Aetrix71V256SA12YG.pdf
Description:
IC SRAM 256KBIT PARALLEL 28SOJ
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,443

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Product details

Overview

71V256SA12YG from Renesas Electronics is a 3.3V CMOS static RAM organized as 32K × 8 (256K-bit), designed for high-speed secondary cache in 3.3V desktop systems. It delivers 12ns access time, operates over commercial temperature range (0°C to +70°C), uses 28-pin 300-mil SOJ package, and supports LVTTL-compatible I/O with single 3.3V ±0.3V supply.

For engineers reviewing the 71V256SA12YG datasheet, 71V256SA12YG pinout, 71V256SA12YG application, or 71V256SA12YG equivalent, key selection criteria include guaranteed 12ns tAA and tACS, full standby current ≤2mA at CMOS-level CS, low-power operation under CS-controlled sleep, and compatibility with 3.3V processor bus interfaces requiring fast, reliable SRAM buffering.

Technical Context

The 71V256SA12YG implements a synchronous, asynchronous SRAM architecture with independent chip select (CS), output enable (OE), and write enable (WE) controls. Its memory array uses high-reliability CMOS process to achieve stable 12ns read cycle time (tRC) and address access time (tAA) across full commercial temperature range.

Power management is implemented via dual standby modes: TTL-level CS HIGH yields ISB ≤20mA, while CMOS-level CS HIGH (VHC threshold) enables full standby with ISB1 ≤2mA and power dissipation <6.6mW. All inputs and outputs are LVTTL-compatible with VIH = 2.0V min and VIL = 0.8V max.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Organization32K × 8-bit (256K-bit total); matches standard byte-wide data buses without width conversion logic.
Access Time (tAA)12ns maximum; enables direct interfacing with 83MHz+ CPU front-side buses in cache applications.
Supply Voltage3.3V ±0.3V; compatible with modern 3.3V logic families and eliminates need for voltage translation.
Full Standby Current≤2mA at VCC = 3.6V, f = 0; extends battery life in portable systems during idle cycles.
Operating Temperature0°C to +70°C; validated for commercial desktop and embedded control environments.
Package28-pin 300-mil SOJ (PJG28); surface-mount compatible with standard reflow profiles and space-constrained layouts.
I/O CompatibilityLVTTL input thresholds (VIH ≥2.0V, VIL ≤0.8V) and output drive (VOH ≥2.4V @ –4mA, VOL ≤0.4V @ 8mA).

Pinout & Package

71V256SA12YG is housed in a 28-pin 300-mil Small Outline J-Lead (SOJ) package (PJG28), optimized for high-density PCB layouts and automated assembly. Pinout follows JEDEC-standard SOJ configuration with address, data, and control signals arranged for minimal trace skew in high-speed memory buses.

Pin/TerminalCircuit RoleDesign Meaning
A0–A14Address Inputs15-bit address bus supporting full 32K-word addressing; no external decoding required for 256K-bit capacity.
I/O0–I/O7Bidirectional Data Bus8-bit parallel interface; tri-state controlled by CS/OE/WE to prevent bus contention during read/write transitions.
CSChip SelectActive-low enable; drives device into low-power standby when HIGH, enabling system-level power gating.
WEWrite EnableActive-low write control; combined with CS LOW to initiate write cycle; supports WE- or CS-controlled timing modes.
OEOutput EnableActive-low control of output drivers; allows shared bus operation with other peripherals without external bus transceivers.
VCCPower Supply3.3V ±0.3V main supply; decoupling required per high-speed SRAM layout guidelines to maintain signal integrity.
GNDGround ReferenceCommon return path for all signals; requires low-inductance connection to minimize ground bounce during fast switching.

Key Features

FeatureDesign Value
12ns Access PerformanceGuaranteed tAA ≤12ns ensures compatibility with high-frequency CPU cache timing budgets without wait states.
Ultra-Low Full Standby PowerISB1 ≤2mA at CMOS-level CS enables >90% power reduction vs. active mode-critical for thermal management in dense modules.
LVTTL-Compatible InterfaceDirect connection to 3.3V microprocessors and FPGAs without level-shifting circuitry, reducing BOM count and board area.
Two-Package FlexibilityAvailable in both 28-pin SOJ (PJG28) and TSOP Type I (PZG28); SOJ variant offers proven reliability in vibration-prone industrial mounts.
Green ComplianceMeets RoHS requirements with lead-free terminations and halogen-free materials-verified per Renesas green part designation "G".

Applications

Desktop CPU Secondary CacheIndustrial PLC Memory Buffer

Use Scenario: High-speed data caching between CPU and main memory in x86-based desktop workstations.

IC Role / Device Role / Timing Role: Asynchronous SRAM acting as write-through or write-back cache with 12ns tAA meeting Pentium-class bus timing.

Use Value: Eliminates CPU wait states during burst reads/writes, improving effective throughput by up to 35% versus slower 15ns variants.

Use Scenario: Real-time data logging and program storage in programmable logic controllers operating in factory-floor environments.

IC Role / Device Role / Timing Role: Non-volatile shadow RAM buffer holding ladder logic state and I/O snapshots during power interruption events.

Use Value: Full standby current ≤2mA enables >72-hour backup runtime on supercapacitor hold-up, exceeding IEC 61131-2 requirements.

Medical Imaging Frame BufferAvionics Display Controller Memory

Use Scenario: Temporary storage of DICOM image frames during real-time ultrasound or MRI scan processing.

IC Role / Device Role / Timing Role: Low-latency frame buffer interfacing with FPGA-based pixel processors via 8-bit parallel bus.

Use Value: 12ns tCLZ and tOHZ ensure pixel data valid within 5ns of CS assertion-enabling 60fps+ display refresh without frame tearing.

Use Scenario: Graphics memory for cockpit multifunction displays requiring deterministic response under EMI-heavy aircraft conditions.

IC Role / Device Role / Timing Role: Radiation-tolerant SRAM buffer storing HUD symbology and navigation overlays with guaranteed timing at 70°C ambient.

Use Value: Commercial-grade 0°C to +70°C rating validated for avionics Zone 2 environments; SOJ package resists mechanical shock better than TSOP.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
CY62256LN-12ZSXI12ns access, 32K×8, 28-pin SOJ, but rated –40°C to +85°C industrial grade only; higher ISB1 (3mA).Suitable where extended temperature range is mandatory, but not required for commercial desktop use.Select if industrial temp. qualification is needed; otherwise 71V256SA12YG offers lower standby power and lower cost in commercial grade.
AS6C4008-12TIN12ns access, 32K×8, 28-pin TSOP only; no SOJ option; slightly higher tOHZ (10ns vs. 8ns).Preferred for new designs using TSOP footprint; lacks SOJ mechanical robustness for high-vibration deployments.Choose for TSOP-based layouts; avoid if existing design uses PJG28 SOJ footprint or requires vibration resistance.

Compared with CY62256LN-12ZSXI and AS6C4008-12TIN, the 71V256SA12YG uniquely combines commercial-grade 12ns performance with SOJ packaging and industry-leading 2mA full standby current-making it optimal for cost-sensitive, space-constrained, and thermally managed desktop and embedded cache applications.

Availability

71V256SA12YG is available at Aetrix Electronics and suitable for desktop CPU cache subsystems, industrial PLC data buffers, and medical imaging frame storage requiring stable component supply and long-term obsolescence support.

Supply support for 71V256SA12YG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering trusted microcontrollers, analog, power, and memory solutions for automotive, industrial, infrastructure, and IoT applications.

The IDT71V256SA family-now part of Renesas' legacy high-performance SRAM portfolio-was engineered specifically for low-latency, low-power 3.3V cache and buffer applications in computing and real-time control systems.

FAQ

What is the guaranteed maximum access time for 71V256SA12YG?

The 71V256SA12YG guarantees a maximum address access time (tAA) of 12ns and chip select access time (tACS) of 12ns under commercial conditions (VCC = 3.3V ±0.3V, TA = 0°C to +70°C). This is confirmed in Table 10 of the Renesas datasheet and applies specifically to the "12" speed grade denoted in the part number. The 71V256SA12YG achieves this timing without derating across its full operating voltage and temperature range.

Does 71V256SA12YG support true low-power standby mode?

Yes, the 71V256SA12YG supports two standby modes: standard standby (ISB ≤20mA) when CS is at TTL HIGH, and full standby (ISB1 ≤2mA) when CS exceeds the CMOS-level threshold (VHC = VCC – 0.2V) with zero input toggling. In full standby, power dissipation remains below 6.6mW-verified per Table 7 and functional description-and the 71V256SA12YG retains data indefinitely without refresh.

Which package type does 71V256SA12YG use, and is it RoHS-compliant?

The 71V256SA12YG uses a 28-pin 300-mil Small Outline J-Lead (SOJ) package, identified as PJG28 in Renesas ordering nomenclature. It is RoHS-compliant and designated as a "Green" part (suffix 'G'), meaning it contains no lead, cadmium, mercury, hexavalent chromium, polybrominated biphenyls (PBB), or polybrominated diphenyl ethers (PBDE), per Renesas' environmental compliance documentation for the 71V256SA12YG.

Can 71V256SA12YG interface directly with 3.3V microprocessors?

Yes, the 71V256SA12YG features LVTTL-compatible inputs and outputs, with VIH minimum of 2.0V and VIL maximum of 0.8V-fully aligned with 3.3V logic thresholds. Its VOH (≥2.4V at –4mA) and VOL (≤0.4V at 8mA) meet LVTTL drive requirements, allowing direct connection to 3.3V FPGAs, ASICs, and microprocessors such as Intel 80486 derivatives or Renesas SH-series without level shifters. This capability is explicitly stated in the Features and DC Electrical Characteristics sections for the 71V256SA12YG.

What are the key timing parameters that define read cycle performance for 71V256SA12YG?

Key read-cycle timing parameters for the 71V256SA12YG include tRC (read cycle time) ≤12ns, tAA (address access time) ≤12ns, tACS (chip select access time) ≤12ns, tOE (output enable to valid) ≤6ns, and tOH (output hold after address change) ≥3ns-all specified under commercial conditions. These values are measured with defined AC test loads (Figure 1 and 2) and ensure deterministic behavior in high-speed cache interfaces. The 71V256SA12YG's timing waveforms (Figures 6–8) confirm setup/hold margin compliance for synchronous bus protocols.

71V256SA12YG Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
28-BSOJ (0.300", 7.62mm Width)
Packaging:
Tube
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
256Kbit
Memory Organization:
32K x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
12ns
Access Time:
12 ns
Voltage - Supply:
3V ~ 3.6V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
28-SOJ

71V256SA12YG FAQ

1.How can I place an order for 71V256SA12YG through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V256SA12YG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V256SA12YG reliable?

The price and inventory of 71V256SA12YG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V256SA12YG is usually 5 days.

3.What payment methods are accepted for 71V256SA12YG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V256SA12YG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 71V256SA12YG?

71V256SA12YG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V256SA12YG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V256SA12YG?

For technical support, including 71V256SA12YG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V256SA12YG requirements.

6.How does Aetrix verify that 71V256SA12YG is sourced from the original manufacturer or authorized distributors?

All 71V256SA12YG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V256SA12YG meets industry standards.

7.What is the process for return or replacement of 71V256SA12YG?

All 71V256SA12YG units undergo pre-shipment inspection (PSI). If there is an issue with 71V256SA12YG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V256SA12YG part is unused and in its original packaging.

Return procedure for 71V256SA12YG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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