Renesas 71V25761S166PFG

Overview

71V25761S166PFG from Renesas Electronics is a 128K × 36-bit synchronous SRAM with pipelined outputs, burst counter, and single-cycle deselect functionality. It operates at 166 MHz (3.5 ns clock access time), supports 3.3 V core and 2.5 V I/O supplies, and features linear/interleaved burst modes via LBO input - used in high-speed networking line cards and embedded real-time data buffering.

For engineers reviewing the 71V25761S166PFG datasheet, 71V25761S166PFG pinout, 71V25761S166PFG application, or 71V25761S166PFG equivalent, key selection criteria include burst-mode timing compliance, 100-pin TQFP package compatibility, industrial temperature support (–40°C to +85°C), and self-timed write control with byte-level granularity.

Technical Context

The 71V25761S166PFG implements a synchronous architecture with registered address, data, and control inputs triggered on the rising edge of CLK. Its internal burst address counter enables four-word burst reads/writes per address, with sequence order determined by the static LBO pin state (linear or interleaved).

Burst operation is initiated by ADSP or ADSC low assertion and advanced via ADV; GW enables full 36-bit writes while BWE and BW1–BW4 support selective 9-bit byte writes. Power-down is controlled asynchronously via ZZ, reducing supply current to 30–35 mA in full sleep mode.

Key Specifications

Pinout & Package

Packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body size, lead pitch 0.5 mm. Pin 1 marked by corner notch; pin 14 may be tied to VDD or left unconnected; pin 64 unconnected keeps device in active mode.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV33-166AXC and AS7C312836B-166BIN, the 71V25761S166PFG delivers the lowest ISB1 (30 mA) and includes a dedicated ZZ pin for hardware-controlled sleep - making it optimal for thermally constrained or intermittently active systems requiring guaranteed data retention without software intervention.

Availability

71V25761S166PFG is available at Aetrix Electronics and suitable for networking line cards, real-time industrial controllers, telecom baseband processing, and avionics data acquisition systems requiring stable component supply across commercial and industrial temperature grades.

Supply support for 71V25761S166PFG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V25761S166PFG belongs to Renesas' high-performance synchronous SRAM product line, designed specifically for deterministic, low-latency data buffering in bandwidth-intensive communication and control systems.

FAQ

What is the maximum operating frequency and corresponding access time for the 71V25761S166PFG?

The 71V25761S166PFG is rated for 166 MHz operation with a guaranteed clock-to-data delay (tCD) of 3.5 ns. This specification applies across the full industrial temperature range (–40°C to +85°C) and is validated under VDD = 3.3 V ±5% and VDDQ = 2.5 V ±5%. The 71V25761S166PFG achieves this performance using pipelined output registers and synchronous address/data latching on the rising edge of CLK.

Does the 71V25761S166PFG support both linear and interleaved burst modes, and how is the mode selected?

Yes, the 71V25761S166PFG supports both linear and interleaved burst sequences via the LBO (Linear Burst Order) input pin. When LBO is driven LOW, the device executes linear bursts (e.g., A0→A1→A2→A3); when HIGH, it uses interleaved order (e.g., A0→A2→A1→A3). LBO is a static input and must remain stable during burst operation - its state is sampled at power-up or reset, not dynamically during access.

How does the 71V25761S166PFG handle partial writes, and what pins control byte-level access?

The 71V25761S166PFG supports partial writes using BWE (Byte Write Enable) and four BWx pins (BW1–BW4). BWE must be LOW to enable BWx signals; each BWx controls one 9-bit byte: BW1 → I/O0–I/O7 + I/OP1, BW2 → I/O8–I/O15 + I/OP2, etc. Asserting any BWx disables all outputs during the write cycle. The 71V25761S166PFG also supports full 36-bit writes via GW (Global Write Enable), which overrides BWx settings.

What power-saving features does the 71V25761S166PFG offer, and how is low-power mode activated?

The 71V25761S166PFG provides three power states: active (IDD ≤ 330 mA at 166 MHz), CMOS standby (ISB1 ≤ 30 mA), and full sleep mode (IZZ ≤ 35 mA). Sleep mode is activated by driving the ZZ pin HIGH, which internally gates the CLK and reduces core activity while retaining memory contents. ZZ is asynchronous and has an internal pull-down, so it defaults to active mode if left unconnected.

Is the 71V25761S166PFG compatible with industrial temperature requirements, and what packaging does it use?

Yes, the 71V25761S166PFG is qualified for industrial temperature operation from –40°C to +85°C, as confirmed in the Ordering Information table (suffix "I" variant: 71V25761S166PFGI). It is packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm lead pitch (PKG100), with RoHS-compliant "Green" material set.