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Renesas 71V25761S166PFGI

Name: 71V25761S166PFGI
Brand: Renesas
SKU: 71V25761S166PFGI
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 71V25761S166PFGI

Manufacturer:: Renesas

Category:: Memory

Package:: 100-LQFP

Datasheet:: 71V25761S166PFGI.pdf

Description:: IC SRAM 4.5MBIT PAR 100TQFP

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Product details

Overview

71V25761S166PFGI from Renesas Electronics is a 128K × 36-bit synchronous SRAM with pipelined outputs, burst counter, and single-cycle deselect. It operates at 166 MHz (3.5 ns clock access time), supports 3.3 V core / 2.5 V I/O, and features linear/interleaved burst mode via LBO input. Used in high-speed networking and telecom data buffering where deterministic latency and burst throughput are critical.

For engineers reviewing the 71V25761S166PFGI datasheet, 71V25761S166PFGI pinout, 71V25761S166PFGI application, or 71V25761S166PFGI equivalent, key selection criteria include industrial temperature support (–40°C to +85°C), TQFP-100 packaging, synchronous burst read/write timing, self-timed write control, and 2.5 V I/O compatibility with 3.3 V core logic.

Technical Context

This SRAM implements a synchronous interface with registered address, data, and control inputs triggered on the rising edge of CLK. Its internal burst address counter enables four-word burst sequences initiated by ADV and ordered per LBO state-linear (LBO = LOW) or interleaved (LBO = HIGH).

The device integrates separate write registers per byte group (BW1–BW4), global write (GW), byte write enable (BWE), and asynchronous sleep mode (ZZ). Pipelined output staging delivers first data one clock cycle after address latch, with subsequent burst words aligned to consecutive CLK edges.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	128K × 36 bits = 4.608 Mbit; supports 36-bit parallel data path for wide-bus systems.
Clock Frequency	166 MHz maximum; enables 3.5 ns clock-to-data (tCD) access for real-time packet buffering.
Supply Voltages	3.3 V ±5% core (VDD); 2.5 V ±5% I/O (VDDQ); enables mixed-voltage system integration.
Operating Temperature	–40°C to +85°C industrial grade; qualified for base station, industrial controller, and automotive infotainment environments.
Package	JEDEC-standard 100-pin TQFP (14 mm × 20 mm); surface-mount compatible with standard reflow profiles.
Power Modes	Active (IDD = 330 mA @ 166 MHz), standby (ISB1 = 35 mA), full sleep (IZZ = 35 mA); supports dynamic power gating.
Burst Control	LBO pin selects linear or interleaved 4-word burst order; ADV advances counter synchronously on each CLK edge.

Pinout & Package

Packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), PKG100, with 0.5 mm pitch and 14 mm × 20 mm footprint. Pin 1 marked by corner notch; top-view orientation per datasheet drawing 5297 drw 02a.

Pin/Terminal	Circuit Role	Design Meaning
A0–A17	Address Inputs	Synchronous address latching on rising CLK edge gated by ADSP/ADSC; covers full 128K depth.
CLK	System Clock Input	Primary timing reference; all synchronous operations (read/write/burst advance) referenced to rising edge.
CE, CS0, CS1	Chip Enable / Selects	Three-level chip select hierarchy (CE active LOW, CS0 active HIGH, CS1 active LOW) for multi-SRAM bank decoding.
ADV, ADSP, ADSC	Burst & Address Status	ADV advances internal burst counter; ADSP (processor) and ADSC (cache) load address register asynchronously to CLK.
GW, BWE, BW1–BW4	Write Control Inputs	GW enables full 36-bit write; BWE gates byte writes; BW1–BW4 select 9-bit byte groups (I/O0–7/I/OP1 through I/O24–31/I/OP4).
OE	Output Enable	Asynchronous control: LOW enables outputs; HIGH forces high-impedance I/O state independent of CLK.
ZZ	Sleep Mode Input	Asynchronous HIGH disables internal clock and reduces supply current to 35 µA; retains data in sleep mode.
I/O0–I/O31, I/OP1–I/OP4	Data I/O	36-bit bidirectional bus; registered input/output paths synchronized to CLK; 2.5 V tolerant I/O voltage.
VDD, VDDQ, VSS	Power & Ground	VDD = 3.3 V core supply; VDDQ = 2.5 V I/O supply; separate VDDQ pins reduce switching noise on I/O drivers.
LBO	Burst Order Select	Static DC input: LOW = linear burst sequence; HIGH = interleaved; must remain stable during operation.

Key Features

Feature	Design Value
Pipelined Burst Outputs	First data word appears one CLK cycle after address latch; remaining three burst words align to next three CLK edges-reducing average latency in sequential access.
Self-Timed Write Cycle	Internal timing logic eliminates external write pulse generation; write completion determined by GW/BWE/BWx sampling at CLK edge-simplifies controller design.
Single-Cycle Deselect	Chip deactivation completes within one clock cycle upon CE/CS assertion change-enables rapid bank switching in multi-SRAM systems.
2.5 V I/O with 3.3 V Core	Separate VDDQ rail allows interfacing with 2.5 V logic families while maintaining 3.3 V core performance-reduces level-shifter count in mixed-voltage designs.
Industrial Temperature Range	Guaranteed operation from –40°C to +85°C with full AC/DC specifications-qualified for deployment in uncontrolled environmental enclosures.

Applications

Telecom Line Card Buffering	Network Processor Data Cache
Use Scenario: High-throughput packet buffering between SERDES PHY and network processor on carrier-grade line cards. IC Role / Device Role / Timing Role: Synchronous SRAM providing low-latency, burst-capable storage for ingress/egress packet queues with deterministic tCD ≤ 3.5 ns. Use Value: Enables 166 MHz sustained read/write throughput without wait states; pipelined outputs match processor burst fetch requirements.	Use Scenario: On-chip cache extension for RISC-based network processors handling deep packet inspection and QoS scheduling. IC Role / Device Role / Timing Role: Wide-bus (36-bit) SRAM acting as L2/L3 cache buffer with single-cycle deselect for fast context switching between traffic classes. Use Value: Linear/interleaved burst modes align with processor prefetch patterns; 2.5 V I/O reduces signal integrity risk at high clock rates.
Industrial PLC Motion Control	Radar Signal Processing FIFO
Use Scenario: Real-time motion profile storage and interpolation lookup in programmable logic controller servo modules. IC Role / Device Role / Timing Role: Deterministic-access memory holding trajectory tables and encoder feedback history with industrial temp reliability. Use Value: –40°C to +85°C rating ensures uptime in factory-floor cabinets; ZZ sleep mode cuts power during idle scan cycles.	Use Scenario: High-speed FIFO for digitized radar return samples prior to FFT processing in automotive ADAS modules. IC Role / Device Role / Timing Role: Burst-mode SRAM absorbing ADC samples at 166 MSPS while feeding DSP cores with aligned 4-word bursts. Use Value: Pipelined output staging eliminates pipeline stalls; separate VDDQ minimizes I/O noise coupling into analog front-end.

Telecom Line Card Buffering

Network Processor Data Cache

Use Scenario: High-throughput packet buffering between SERDES PHY and network processor on carrier-grade line cards.

IC Role / Device Role / Timing Role: Synchronous SRAM providing low-latency, burst-capable storage for ingress/egress packet queues with deterministic tCD ≤ 3.5 ns.

Use Value: Enables 166 MHz sustained read/write throughput without wait states; pipelined outputs match processor burst fetch requirements.

Use Scenario: On-chip cache extension for RISC-based network processors handling deep packet inspection and QoS scheduling.

IC Role / Device Role / Timing Role: Wide-bus (36-bit) SRAM acting as L2/L3 cache buffer with single-cycle deselect for fast context switching between traffic classes.

Use Value: Linear/interleaved burst modes align with processor prefetch patterns; 2.5 V I/O reduces signal integrity risk at high clock rates.

Industrial PLC Motion Control

Radar Signal Processing FIFO

Use Scenario: Real-time motion profile storage and interpolation lookup in programmable logic controller servo modules.

IC Role / Device Role / Timing Role: Deterministic-access memory holding trajectory tables and encoder feedback history with industrial temp reliability.

Use Value: –40°C to +85°C rating ensures uptime in factory-floor cabinets; ZZ sleep mode cuts power during idle scan cycles.

Use Scenario: High-speed FIFO for digitized radar return samples prior to FFT processing in automotive ADAS modules.

IC Role / Device Role / Timing Role: Burst-mode SRAM absorbing ADC samples at 166 MSPS while feeding DSP cores with aligned 4-word bursts.

Use Value: Pipelined output staging eliminates pipeline stalls; separate VDDQ minimizes I/O noise coupling into analog front-end.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY7C1362BV33-166AXC	128K × 32 organization; 3.3 V only (no 2.5 V I/O); 166 MHz, 100-pin TQFP; Cypress/Infineon	Supports 32-bit bus width only; lacks byte-select granularity for 36-bit interfaces; no LBO-controlled burst ordering	Select when system uses 32-bit data path and requires drop-in replacement without I/O voltage translation.
AS7C312836B-166BIN	128K × 36; 3.3 V core / 2.5 V I/O; 166 MHz; 100-pin TQFP; Alliance Memory	Same memory map and pinout; identical burst functionality and timing; industrial temp rated	Valid second-source option with identical electrical and mechanical compatibility-no layout or firmware changes required.

Compared with CY7C1362BV33-166AXC, 71V25761S166PFGI provides native 36-bit width and 2.5 V I/O flexibility; versus AS7C312836B-166BIN, it offers identical functionality with Renesas' long-term industrial support and qualification pedigree.

Availability

71V25761S166PFGI is available at Aetrix Electronics and suitable for telecom infrastructure, industrial automation, and automotive radar applications requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 71V25761S166PFGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT markets.

The 71V25761 series belongs to Renesas' high-speed synchronous SRAM product line, designed specifically for deterministic-latency data buffering in networking, telecom, and real-time control systems.

FAQ

What is the operating temperature range for the 71V25761S166PFGI?

The 71V25761S166PFGI is rated for industrial temperature operation from –40°C to +85°C. This specification is guaranteed across all AC and DC parameters in the datasheet, including clock access time, power consumption, and I/O voltage thresholds. The 'I' suffix in the part number explicitly denotes industrial grade qualification.

Does the 71V25761S166PFGI support both linear and interleaved burst modes?

Yes, the 71V25761S166PFGI supports both burst modes via the LBO (Linear/Interleaved Burst Order) pin. When LBO is driven LOW, the device executes linear burst addressing; when HIGH, it uses interleaved order. The burst sequence is defined in Tables 14 and 15 of the datasheet, and LBO must remain static during active operation.

How does the 71V25761S166PFGI handle power-down and sleep modes?

The 71V25761S166PFGI implements two low-power states: CMOS standby (ISB1 = 35 mA) when deselected, and full sleep mode (IZZ = 35 µA) activated by driving ZZ HIGH. Sleep mode gates the internal clock and maintains data retention. Recovery time (tZZR) is 100 ns, and ZZ has an internal pull-down for default-active behavior.

What is the significance of the 'PFGI' suffix in 71V25761S166PFGI?

The 'PFGI' suffix decodes as: P = plastic, F = thin quad flatpack (TQFP), G = green (lead-free/RoHS-compliant), I = industrial temperature grade. This confirms the device is a RoHS-compliant 100-pin TQFP package qualified for –40°C to +85°C operation, matching the PKG100 mechanical outline.

Can the 71V25761S166PFGI be used with a 3.3 V-only system without 2.5 V I/O supplies?

No-the 71V25761S166PFGI requires separate 2.5 V I/O supply (VDDQ) per datasheet Table 5. Applying 3.3 V to VDDQ exceeds absolute maximum ratings and risks damage. Systems must provide dedicated 2.5 V regulation for VDDQ pins; core VDD remains 3.3 V.

71V25761S166PFGI Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 100-LQFP

Packaging:: Tray

Product Status:: Active

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous, SDR

Memory Size:: 4.5Mbit

Memory Organization:: 128K x 36

Memory Interface:: Parallel

Clock Frequency:: 166 MHz

Write Cycle Time - Word, Page:: -

Access Time:: 3.5 ns

Voltage - Supply:: 3.135V ~ 3.465V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 100-TQFP (14x20)

71V25761S166PFGI FAQ

1.How can I place an order for 71V25761S166PFGI through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V25761S166PFGI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V25761S166PFGI reliable?

The price and inventory of 71V25761S166PFGI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V25761S166PFGI is usually 5 days.

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71V25761S166PFGI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V25761S166PFGI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V25761S166PFGI?

For technical support, including 71V25761S166PFGI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V25761S166PFGI requirements.

6.How does Aetrix verify that 71V25761S166PFGI is sourced from the original manufacturer or authorized distributors?

All 71V25761S166PFGI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V25761S166PFGI meets industry standards.

7.What is the process for return or replacement of 71V25761S166PFGI?

All 71V25761S166PFGI units undergo pre-shipment inspection (PSI). If there is an issue with 71V25761S166PFGI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V25761S166PFGI part is unused and in its original packaging.

Return procedure for 71V25761S166PFGI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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