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Renesas 71V25761S166PFGI8

Name: 71V25761S166PFGI8
Brand: Renesas
SKU: 71V25761S166PFGI8
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 71V25761S166PFGI8

Manufacturer:: Renesas

Category:: Memory

Package:: 100-LQFP

Datasheet:: 71V25761S166PFGI8.pdf

Description:: IC SRAM 4.5MBIT PAR 100TQFP

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Product details

Overview

71V25761S166PFGI8 from Renesas Electronics is a 128K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, 2.5V I/O, burst counter, and single-cycle deselect. It operates at 166MHz (3.5ns clock access time), supports linear/interleaved burst modes via LBO input, and features global write (GW), byte write enables (BW1–BW4), and sleep mode (ZZ) for low-power operation. It is used in high-speed networking buffers and real-time DSP subsystems requiring deterministic burst data access.

For engineers reviewing the 71V25761S166PFGI8 datasheet, 71V25761S166PFGI8 pinout, 71V25761S166PFGI8 application, or 71V25761S166PFGI8 equivalent, this page delivers verified timing parameters, JEDEC-standard 100-pin TQFP package mapping, industrial-grade thermal performance (−40°C to +85°C), synchronous control logic behavior, and validated alternative SRAM options for memory subsystem redesign.

Technical Context

The 71V25761S166PFGI8 implements a synchronous, clock-driven architecture with registered address, data, and control inputs triggered on the rising edge of CLK. Its internal burst address counter generates four sequential addresses per initial address, with order determined by the static LBO pin state-linear (LBO = LOW) or interleaved (LBO = HIGH).

Burst reads deliver pipelined output data: first word appears one clock cycle after address latching; subsequent words appear on the next three rising clock edges. Write cycles support self-timed operation using GW, BWE, and BWx signals, with asynchronous OE and ZZ enabling output disable and full sleep mode, respectively.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	128K × 36 bits = 4.608 Mbit; supports 36-bit wide data paths for parallel bus architectures.
Clock Frequency / Access Time	166 MHz / 3.5 ns; guarantees deterministic read latency under industrial temperature (−40°C to +85°C).
Supply Voltages	VDD = 3.3 V ±5% (core), VDDQ = 2.5 V ±5% (I/O); dual-rail separation reduces noise coupling between logic and interface domains.
Burst Mode Control	LBO pin selects linear or interleaved 4-word burst sequence; static configuration requires no runtime reconfiguration.
Power Management	ZZ input enables full sleep mode (IZZ ≤ 35 µA); ISB1 standby current ≤ 35 mA ensures low idle power in deselected state.
Timing Interface	Synchronous inputs (CE, CS0, CS1, ADSP, ADSC, ADV, GW, BWE, BWx) all referenced to CLK rising edge; OE and ZZ are asynchronous.
Package & Compliance	JEDEC-standard 100-pin TQFP (14 mm × 20 mm); RoHS-compliant "Green" variant (PFGI8 suffix).

Pinout & Package

Package: 100-pin plastic thin quad flatpack (TQFP), JEDEC standard PKG100, 14 mm × 20 mm body, 0.5 mm pitch.

Pin/Terminal	Circuit Role	Design Meaning
A0–A17	Address Inputs	18-bit synchronous address bus; latched on rising CLK edge when ADSP or ADSC is asserted with CE active.
CE, CS0, CS1	Chip Enable / Selects	Three-level synchronous chip selection: CE (active LOW), CS0 (active HIGH), CS1 (active LOW); all required for device enable.
GW, BWE, BW1–BW4	Write Control Inputs	GW enables full 36-bit write; BWE gates BW1–BW4 (each controls 9-bit byte); all synchronous to CLK rising edge.
ADV, ADSP, ADSC	Burst & Address Status	ADV advances internal burst counter; ADSP (processor) and ADSC (cache controller) load address register synchronously.
OE, ZZ	Output & Sleep Control	OE (asynchronous) enables/disables I/O drivers; ZZ (asynchronous HIGH) gates internal clock and reduces supply current to ≤35 µA.
I/O0–I/O31, I/OP1–I/OP4	Data I/O	36-bit bidirectional synchronous data bus (32 data + 4 parity); registered input/output paths ensure timing predictability.
VDD, VDDQ, VSS	Power & Ground	VDD = 3.3 V core supply; VDDQ = 2.5 V I/O supply; separate rails isolate switching noise from core logic.
LBO	Burst Order Select	Asynchronous static input: LOW = linear burst, HIGH = interleaved burst; must remain stable during operation.

Key Features

Feature	Design Value
Pipelined Burst Output	First data word available one clock cycle after address latch; subsequent words delivered on next three rising CLK edges-enabling continuous 166 MHz throughput without wait states.
Single-Cycle Deselect	Device enters high-impedance output state within one clock cycle of CE/CS deassertion-critical for bus arbitration in multi-master systems.
Byte-Write Granularity	Four independent 9-bit byte write enables (BW1–BW4) allow partial writes without read-modify-write, reducing bus traffic and latency in cache line updates.
Industrial Temperature Support	Rated for −40°C to +85°C operation with guaranteed 166 MHz performance and full parameter compliance-suitable for base station, avionics, and industrial control.
Low-Power Sleep Mode	ZZ HIGH reduces IDD to ≤35 µA while retaining data; eliminates need for external power gating in battery-backed or energy-constrained applications.

Applications

Networking Packet Buffer	DSP Real-Time Data Cache
Use Scenario: Storing incoming/outgoing Ethernet frames in Layer 2/3 switches with strict latency budgets. IC Role / Device Role / Timing Role: High-bandwidth, low-latency 36-bit-wide buffer supporting burst-aligned frame assembly and disassembly. Use Value: Pipelined 166 MHz burst reads/writes eliminate pipeline stalls; single-cycle deselect enables rapid context switching between ports.	Use Scenario: Serving as on-chip instruction/data cache for fixed-point DSPs executing real-time FIR filtering or FFTs. IC Role / Device Role / Timing Role: Synchronous SRAM providing deterministic 3.5 ns access to coefficient tables and sample buffers. Use Value: Linear burst mode matches natural memory access patterns of circular buffers; 2.5 V I/O interfaces cleanly with 2.5 V DSP I/O standards.
Industrial PLC I/O Module	Medical Imaging Frame Store
Use Scenario: Holding sensor acquisition data and actuator command sets in deterministic motion-control systems. IC Role / Device Role / Timing Role: Industrial-grade memory buffer interfacing to FPGA-based control logic with tight jitter requirements. Use Value: −40°C to +85°C rating ensures reliability in uncontrolled cabinet environments; ZZ sleep mode cuts power during idle scan cycles.	Use Scenario: Temporary storage of uncompressed ultrasound or MRI pixel data before compression and transfer to host. IC Role / Device Role / Timing Role: High-throughput burst-access memory staging raw image lines prior to DMA transfer. Use Value: 128K × 36 organization supports 16-bit pixel × 32-line buffering; pipelined outputs align with pixel clock timing constraints.

Networking Packet Buffer

DSP Real-Time Data Cache

Use Scenario: Storing incoming/outgoing Ethernet frames in Layer 2/3 switches with strict latency budgets.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency 36-bit-wide buffer supporting burst-aligned frame assembly and disassembly.

Use Value: Pipelined 166 MHz burst reads/writes eliminate pipeline stalls; single-cycle deselect enables rapid context switching between ports.

Use Scenario: Serving as on-chip instruction/data cache for fixed-point DSPs executing real-time FIR filtering or FFTs.

IC Role / Device Role / Timing Role: Synchronous SRAM providing deterministic 3.5 ns access to coefficient tables and sample buffers.

Use Value: Linear burst mode matches natural memory access patterns of circular buffers; 2.5 V I/O interfaces cleanly with 2.5 V DSP I/O standards.

Industrial PLC I/O Module

Medical Imaging Frame Store

Use Scenario: Holding sensor acquisition data and actuator command sets in deterministic motion-control systems.

IC Role / Device Role / Timing Role: Industrial-grade memory buffer interfacing to FPGA-based control logic with tight jitter requirements.

Use Value: −40°C to +85°C rating ensures reliability in uncontrolled cabinet environments; ZZ sleep mode cuts power during idle scan cycles.

Use Scenario: Temporary storage of uncompressed ultrasound or MRI pixel data before compression and transfer to host.

IC Role / Device Role / Timing Role: High-throughput burst-access memory staging raw image lines prior to DMA transfer.

Use Value: 128K × 36 organization supports 16-bit pixel × 32-line buffering; pipelined outputs align with pixel clock timing constraints.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY7C1362BV33-166AXC	128K × 36, 3.3 V core, 2.5 V I/O, 166 MHz; same TQFP-100 package but Cypress (now Infineon) silicon; slightly higher ISB1 (40 mA vs. 35 mA).	Valid for drop-in replacement where board layout matches; requires verification of ADSP/ADSC timing compatibility in cache-coherent designs.	Preferred when existing design uses Cypress toolchain or requires long-term Infineon supply continuity.
AS7C312836B-166BIN	128K × 36, 3.3 V core, 2.5 V I/O, 166 MHz; 100-pin TQFP, but manufactured by Alliance Memory; tCD = 3.6 ns (vs. 3.5 ns), wider tCYC tolerance.	Acceptable in non-critical timing margins; lacks LBO-controlled interleaved burst-only linear mode supported.	Selected for cost-sensitive industrial applications where burst order flexibility is not required and 0.1 ns timing margin is acceptable.

Compared with CY7C1362BV33-166AXC and AS7C312836B-166BIN, the 71V25761S166PFGI8 uniquely combines guaranteed interleaved/linear burst selection, lowest industrial-grade standby current (35 mA), and Renesas' long-term industrial support roadmap-making it optimal for new designs demanding configurability and thermal robustness.

Availability

71V25761S166PFGI8 is available at Aetrix Electronics and suitable for networking packet buffers, DSP real-time data caches, and industrial PLC I/O modules requiring stable component supply across extended temperature ranges and multi-year production cycles.

Supply support for 71V25761S166PFGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, infrastructure, and IoT markets.

The 71V25761S166PFGI8 belongs to Renesas' high-speed synchronous SRAM product line, engineered for deterministic, low-latency memory subsystems in real-time communication and signal processing equipment.

FAQ

What is the operating temperature range for the 71V25761S166PFGI8?

The 71V25761S166PFGI8 is rated for industrial temperature operation from −40°C to +85°C. This specification is guaranteed across all published AC and DC parameters-including 166 MHz clock frequency, 3.5 ns tCD, and full functionality of burst mode, sleep mode (ZZ), and byte write controls-at the extremes of this range.

Does the 71V25761S166PFGI8 support both linear and interleaved burst modes?

Yes, the 71V25761S166PFGI8 supports both linear and interleaved burst sequences via the LBO (Linear Burst Order) pin. When LBO is driven LOW, the internal burst counter follows linear order (00→01→10→11); when HIGH, it follows interleaved order (00→01→11→10). LBO is asynchronous and must remain static during active operation.

What is the function of the ZZ pin on the 71V25761S166PFGI8?

The ZZ pin on the 71V25761S166PFGI8 is an asynchronous sleep mode input. When driven HIGH, it internally gates the CLK signal and reduces supply current to ≤35 µA (IZZ) while maintaining full data retention. The device exits sleep mode synchronously upon ZZ returning LOW, with tZZR ≤ 100 ns recovery time specified.

How many address bits does the 71V25761S166PFGI8 require for its 128K × 36 organization?

The 71V25761S166PFGI8 requires 17 address bits (A0–A16) to access its 128K (131,072) locations. Although the pinout includes A0–A17 (18 pins), A17 is unused in 128K × 36 configuration and functions as NC. Address decoding is handled internally, and only A0–A16 are active for memory selection.

What are the voltage requirements for VDD and VDDQ on the 71V25761S166PFGI8?

The 71V25761S166PFGI8 requires VDD = 3.3 V ±5% (3.135 V to 3.465 V) for core logic and VDDQ = 2.5 V ±5% (2.375 V to 2.625 V) for I/O circuitry. These rails must be independently decoupled; VDDQ may not exceed VDD + 0.5 V, and no I/O pin voltage may exceed VDDQ + 0.5 V under any condition.

71V25761S166PFGI8 Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 100-LQFP

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous, SDR

Memory Size:: 4.5Mbit

Memory Organization:: 128K x 36

Memory Interface:: Parallel

Clock Frequency:: 166 MHz

Write Cycle Time - Word, Page:: -

Access Time:: 3.5 ns

Voltage - Supply:: 3.135V ~ 3.465V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 100-TQFP (14x20)

71V25761S166PFGI8 FAQ

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Please submit a Request for Quotation (RFQ) for 71V25761S166PFGI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of 71V25761S166PFGI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V25761S166PFGI8 is usually 5 days.

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For technical support, including 71V25761S166PFGI8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V25761S166PFGI8 requirements.

6.How does Aetrix verify that 71V25761S166PFGI8 is sourced from the original manufacturer or authorized distributors?

All 71V25761S166PFGI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V25761S166PFGI8 meets industry standards.

7.What is the process for return or replacement of 71V25761S166PFGI8?

All 71V25761S166PFGI8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V25761S166PFGI8, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V25761S166PFGI8 part is unused and in its original packaging.

Return procedure for 71V25761S166PFGI8:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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