Renesas 71V25761S183PFG

Overview

71V25761S183PFG from Renesas Electronics is a 128K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, 2.5V I/O, burst counter, and single-cycle deselect. It delivers 183MHz operation (3.3ns clock access time), supports linear/interleaved burst modes via LBO input, and features self-timed write with global and byte-level write control. It serves as high-speed buffer/cache memory in network packet processors and telecom line cards.

For engineers reviewing the 71V25761S183PFG datasheet, 71V25761S183PFG pinout, 71V25761S183PFG application, or 71V25761S183PFG equivalent, key selection criteria include burst-mode timing compliance, 2.5V I/O voltage compatibility with ASIC/FPGA interfaces, industrial-grade temperature support (–40°C to +85°C), and TQFP-100 package mechanical fit for legacy backplane designs.

Technical Context

The 71V25761S183PFG implements a synchronous pipeline architecture where address latching, burst sequencing, and output registration are all edge-triggered on CLK. Its internal 2-bit binary burst counter advances on ADV=LOW and selects next addresses per LBO-defined sequence (linear or interleaved), enabling four consecutive 36-bit words per address cycle.

Write operations support both global (GW) and byte-select (BW1–BW4 + BWE) modes, with asynchronous OE and ZZ inputs enabling output disable and full sleep mode (IZZ ≤ 35mA). The device uses separate 3.3V core (VDD) and 2.5V I/O (VDDQ) supplies, with VIH/VIL thresholds referenced to respective rails.

Key Specifications

Pinout & Package

71V25761S183PFG is packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), measuring 14 mm × 20 mm with 0.5 mm lead pitch. The package supports fine-pitch surface-mount assembly and thermal dissipation up to 2.0 W under specified conditions.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1371DV33-183AXC and AS7C3256B-183JCIN, the 71V25761S183PFG uniquely combines industrial temperature qualification, TQFP-100 mechanical compatibility with legacy designs, and hardware-controlled sleep mode - making it the sole option for drop-in replacement in deployed telecom and industrial hardware.

Availability

71V25761S183PFG is available at Aetrix Electronics and suitable for network packet buffering, telecom line card caching, industrial PLC data logging, and radar signal processing applications requiring stable component supply across extended product lifecycles.

Supply support for 71V25761S183PFG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V25761S183PFG belongs to Renesas' high-speed synchronous SRAM product line, engineered specifically for deterministic, low-latency memory interfacing in telecom infrastructure and real-time embedded systems.

FAQ

What is the maximum operating frequency and corresponding access time for the 71V25761S183PFG?

The 71V25761S183PFG is rated for 183 MHz operation with a guaranteed clock access time of 3.3 ns. This specification applies across the full industrial temperature range (–40°C to +85°C) and is validated under VDD = 3.3 V ±5% and VDDQ = 2.5 V ±5%. The 71V25761S183PFG achieves this performance using pipelined output registers and synchronous address latching on the rising edge of CLK.

Does the 71V25761S183PFG support both linear and interleaved burst modes, and how is the mode selected?

Yes, the 71V25761S183PFG supports both linear and interleaved burst sequences via the LBO (Linear Burst Order) input pin. When LBO is driven LOW, the device executes linear burst addressing (00→01→10→11); when HIGH, it uses interleaved order (00→01→11→10). LBO is a static input - its state must be stable during operation and is sampled asynchronously at power-up or reset.

What are the power supply requirements for the 71V25761S183PFG, and are separate core and I/O rails mandatory?

The 71V25761S183PFG requires two independent supplies: VDD = 3.3 V ±5% for the core logic and VDDQ = 2.5 V ±5% for the I/O circuitry. These rails are not interchangeable - VDD powers the address register, burst counter, and control logic, while VDDQ directly biases the I/O buffers. Using separate supplies ensures signal integrity and prevents I/O switching noise from affecting internal timing margins.

How does the 71V25761S183PFG enter and exit sleep mode, and what is the typical current draw in that state?

The 71V25761S183PFG enters full sleep mode when the ZZ pin is driven HIGH (≥ VHD = VDDQ − 0.2 V). It exits sleep mode after tZZR ≥ 100 ns following ZZ returning LOW. In sleep mode, supply current is limited to IZZ ≤ 35 mA (industrial grade), preserving data retention while minimizing system power. The ZZ pin has an internal pull-down, so it defaults to active mode if left unconnected.

Is the 71V25761S183PFG pin-compatible with other members of the 71V25761 family, such as the 166 MHz or 200 MHz variants?

Yes, the 71V25761S183PFG is fully pin-compatible with other speed grades in the 71V25761SxxxPFG series (e.g., 71V25761S166PFG, 71V25761S200PFG), all housed in the same 100-pin TQFP package. Pin functions, voltage levels, timing conventions, and control logic are identical - only AC timing parameters (tCYC, tCD, etc.) differ. This allows frequency-scaling upgrades without PCB revision.