Renesas 71V25761S183PFG8
- Part No.:
- 71V25761S183PFG8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
71V25761S183PFG8.pdf
- Description:
- IC SRAM 4.5MBIT PAR 100TQFP
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
71V25761S183PFG8 from Renesas Electronics is a 128K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, burst counter, and single-cycle deselect. It operates at 183 MHz (3.3 ns clock access time), supports 2.5V I/O, and features linear/interleaved burst mode via LBO input. Used in high-speed networking line cards for packet buffering and cache coherency management.
For engineers reviewing the 71V25761S183PFG8 datasheet, 71V25761S183PFG8 pinout, 71V25761S183PFG8 application, or 71V25761S183PFG8 equivalent, key selection criteria include burst-mode timing compliance, 100-pin TQFP mechanical fit, industrial-grade temperature support (–40°C to +85°C), and compatibility with 3.3V core / 2.5V I/O system partitioning.
Technical Context
The 71V25761S183PFG8 implements a synchronous, clock-driven architecture with registered address, data, and control inputs. Its internal burst address counter enables four-word pipelined reads per address assertion, with output latency of one clock cycle and subsequent data valid on successive rising edges of CLK.
Burst order is determined by the static LBO pin (LOW = linear, HIGH = interleaved), while ADV controls burst advance and ADSP/ADSC provide processor- or cache-controller–driven address latching. Self-timed write cycles are enabled via GW, BWE, and BW1–BW4 with byte-level granularity across four 9-bit data groups.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36 bits = 4.608 Mbit; supports 36-bit parallel bus interfaces without external data multiplexing. |
| Max Clock Frequency | 183 MHz; enables 183 million read/write operations per second under industrial temperature conditions. |
| Access Time | 3.3 ns clock-to-data (tCD); defines minimum clock period for guaranteed valid output after CLK rise. |
| Core Supply | 3.3 V ±5%; powers internal logic and registers; requires dedicated low-noise regulation separate from I/O rail. |
| I/O Supply | 2.5 V ±5%; isolates I/O signaling domain from core logic, enabling interoperability with 2.5V ASIC/FPGA interfaces. |
| Operating Temperature | –40°C to +85°C; qualified for industrial environments including base station equipment and motor control cabinets. |
| Package | 100-pin TQFP (14 mm × 20 mm); JEDEC-standard footprint compatible with automated SMT assembly and thermal relief pad design. |
Pinout & Package
71V25761S183PFG8 is packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body size, with 0.5 mm lead pitch. Pin 1 is marked by a dot or beveled corner; pins are numbered counterclockwise from top-left when viewed from top.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | Synchronous 18-bit address bus; latched on rising CLK edge when ADSP or ADSC is active LOW and CE is LOW. |
| CLK | System Clock Input | Primary timing reference; all synchronous operations (read/write/burst) are edge-triggered on rising CLK. |
| CE, CS0, CS1 | Chip Enable/Selects | Three-level decode: CE LOW + CS0 HIGH + CS1 LOW enables device; supports multi-chip memory expansion. |
| GW, BWE, BW1–BW4 | Write Control Inputs | GW enables full 36-bit writes; BWE gates BWx signals; BW1–BW4 select four independent 9-bit byte lanes (I/O0–7/I/OP1, etc.). |
| ADV, ADSP, ADSC | Burst Address Control | ADV advances internal burst counter; ADSP (processor) and ADSC (cache) independently load address register on falling edge. |
| LBO, ZZ, OE | Mode & Output Control | LBO selects linear/interleaved burst sequence; ZZ places device in low-power sleep (IZZ ≤ 35 mA); OE asynchronously enables/disables I/O drivers. |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional synchronous bus; registered input/output paths ensure timing closure in high-speed PCB layouts. |
| VDD, VDDQ, VSS | Power & Ground | VDD = 3.3V core supply; VDDQ = 2.5V I/O supply; multiple VSS pins provide low-inductance return paths for signal integrity. |
Key Features
| Feature | Design Value |
|---|---|
| Pipelined Burst Read | Delivers four consecutive 36-bit words per address with 1-cycle pipeline latency-enables sustained 183 MB/s throughput without CPU wait states. |
| Single-Cycle Deselect | Device transitions to high-impedance I/O state within one CLK cycle upon chip disable-eliminates bus contention during dynamic memory arbitration. |
| Byte-Write Granularity | Four independent 9-bit write lanes (BW1–BW4) allow partial-word updates without read-modify-write overhead-critical for protocol header manipulation. |
| 2.5V I/O Compatibility | Separate VDDQ rail permits direct interfacing with 2.5V FPGAs and ASICs while maintaining 3.3V core logic robustness-reduces level-shifter count and board area. |
| Industrial Temperature Range | Validated operation from –40°C to +85°C ensures reliability in uncontrolled enclosures such as outdoor telecom cabinets and factory-floor controllers. |
Applications
| Networking Line Cards | Real-Time Industrial Controllers |
|---|---|
Use Scenario: High-throughput packet buffering in 10G Ethernet switch fabric ASICs requiring deterministic latency and zero packet loss under burst traffic. IC Role / Device Role / Timing Role: Primary burst-access SRAM for ingress/egress FIFOs; provides pipelined 36-bit reads aligned to 183 MHz system clock. Use Value: Single-cycle deselect and burst counter eliminate address setup overhead, sustaining >95% bus utilization during TCP/IP reassembly. | Use Scenario: Deterministic motion control loop storage in CNC machine tool drives where jitter-free memory access ensures sub-microsecond servo update timing. IC Role / Device Role / Timing Role: Dual-port-like buffer for position/velocity command staging; uses ADV-controlled burst to preload next trajectory segment. Use Value: 3.3 ns tCD and industrial temp rating guarantee timing margin across ambient swings, preventing axis misalignment faults. |
| Avionics Data Recorders | Medical Imaging Subsystems |
Use Scenario: Solid-state flight data recorder (FDR) buffer capturing 100+ sensor channels at 10 kHz sample rate with power-fail retention. IC Role / Device Role / Timing Role: High-reliability scratchpad memory; leverages ZZ sleep mode (IZZ ≤ 35 mA) for battery-backed low-power standby. Use Value: Full-sleep current spec validated over –40°C to +85°C ensures 10-year MTBF in pressurized avionics bays. | Use Scenario: Real-time DICOM image preprocessing pipeline in portable ultrasound units requiring low-latency frame buffering between FPGA and ARM SoC. IC Role / Device Role / Timing Role: Interposer SRAM bridging 2.5V FPGA and 3.3V processor domains; uses separate VDDQ to avoid level shifters. Use Value: 2.5V I/O tolerance eliminates discrete voltage translators, reducing BOM cost and EMI risk in compact handheld enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 71V25761S166PFG8 | Slower max speed (166 MHz / 3.5 ns tCD); identical pinout, package, and feature set. | Suitable for cost-sensitive designs where 183 MHz bandwidth is not required-e.g., legacy backplane interfaces. | Select when system clock budget allows 166 MHz operation and lower power consumption (ISB2 = 110 mA @ 166 MHz) is prioritized. |
| 71V25761S200PFG8 | Faster max speed (200 MHz / 3.1 ns tCD); same package and electrical interface but tighter timing margins. | Required for next-gen 25G SerDes subsystems demanding maximum burst throughput-e.g., AI accelerator memory buffers. | Choose only if PCB layout meets 200 MHz signal integrity requirements (tCH/tCL = 2.2 ns min) and thermal management supports higher IDD (360 mA). |
Compared with 71V25761S166PFG8 and 71V25761S200PFG8, the 71V25761S183PFG8 delivers optimal balance of speed (183 MHz), power (ISB2 = 120 mA), and timing margin for mid-tier industrial and telecom applications-avoiding overdesign while ensuring headroom beyond 166 MHz legacy systems.
Availability
71V25761S183PFG8 is available at Aetrix Electronics and suitable for networking line cards, real-time industrial controllers, avionics data recorders, and medical imaging subsystems requiring stable component supply across extended product lifecycles.
Supply support for 71V25761S183PFG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering trusted embedded solutions for automotive, industrial, infrastructure, and IoT markets.
The 71V25761 family was designed specifically for high-bandwidth, low-latency memory buffering in synchronous digital systems-emphasizing burst efficiency, industrial reliability, and mixed-voltage I/O flexibility.
FAQ
What is the maximum operating frequency of the 71V25761S183PFG8?
The 71V25761S183PFG8 is rated for 183 MHz operation with a guaranteed 3.3 ns clock-to-data access time (tCD) across the full industrial temperature range (–40°C to +85°C). This speed grade is validated under worst-case VDD = 3.135 V and VDDQ = 2.375 V conditions, making it suitable for timing-critical applications like packet buffering and motion control loops.
Does the 71V25761S183PFG8 support both linear and interleaved burst modes?
Yes, the 71V25761S183PFG8 supports both burst modes via the LBO (Linear Burst Order) pin: LBO = LOW selects linear addressing (0,1,2,3), while LBO = HIGH selects interleaved (0,2,1,3). The burst sequence is generated by an internal binary counter and applies to all four words in a burst cycle-confirmed in Tables 14 and 15 of the Renesas datasheet.
What power supply rails does the 71V25761S183PFG8 require?
The 71V25761S183PFG8 requires two independent supplies: VDD = 3.3 V ±5% for core logic and registers, and VDDQ = 2.5 V ±5% for I/O drivers and data paths. These rails must be decoupled separately per datasheet recommendations (Table 5), and VDDQ may not exceed VDD + 0.5 V to prevent latch-up per Absolute Maximum Ratings (Table 3).
How does the 71V25761S183PFG8 handle power-down and sleep modes?
The 71V25761S183PFG8 offers three low-power states: deselected standby (ISB1 ≤ 35 mA), clock-running standby (ISB2 ≤ 130 mA), and full sleep mode (IZZ ≤ 35 mA) activated by pulling ZZ HIGH. In sleep mode, CLK is internally gated and data retention is guaranteed-verified over the full industrial temperature range with no external refresh required.
Is the 71V25761S183PFG8 pin-compatible with other members of the 71V25761 family?
Yes, all 71V25761 speed grades-including 71V25761S166PFG8, 71V25761S183PFG8, and 71V25761S200PFG8-are fully pin-compatible in the 100-pin TQFP (PKG100) package. They share identical pin functions, DC/AC specifications (except speed-related parameters), and timing architecture-enabling drop-in speed upgrades without PCB revision.
71V25761S183PFG8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 100-LQFP
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 183 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.3 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x20)
71V25761S183PFG8 FAQ
1.How can I place an order for 71V25761S183PFG8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V25761S183PFG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V25761S183PFG8 reliable?
The price and inventory of 71V25761S183PFG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V25761S183PFG8 is usually 5 days.
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Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V25761S183PFG8?
For technical support, including 71V25761S183PFG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V25761S183PFG8 requirements.
6.How does Aetrix verify that 71V25761S183PFG8 is sourced from the original manufacturer or authorized distributors?
All 71V25761S183PFG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V25761S183PFG8 meets industry standards.
7.What is the process for return or replacement of 71V25761S183PFG8?
All 71V25761S183PFG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V25761S183PFG8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V25761S183PFG8 part is unused and in its original packaging.
Return procedure for 71V25761S183PFG8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V25761S183PFG8 Tags

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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology

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AT21CS01-STUM10-T
Microchip Technology

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AT24C02C-SSHM-T
Microchip Technology

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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics

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AT24CS02-SSHM-T
Microchip Technology

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93LC46BT-I/OT
Microchip Technology

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AT24C04C-SSHM-T
Microchip Technology

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24LC01BT-I/SN
Microchip Technology

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24AA02UIDT-I/OT
Microchip Technology

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AT24C08C-STUM-T
Microchip Technology
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