Renesas 71V25761S183PFGI

Overview

71V25761S183PFGI from Renesas Electronics is a 128K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, burst counter, and single-cycle deselect. It operates at 183MHz (3.3ns clock access time), supports 2.5V I/O, and features linear/interleaved burst mode via LBO input. Used in high-speed networking and telecom data buffering where deterministic latency and burst throughput are critical.

For engineers reviewing the 71V25761S183PFGI datasheet, 71V25761S183PFGI pinout, 71V25761S183PFGI application, or 71V25761S183PFGI equivalent, key selection criteria include burst timing compliance, 100-pin TQFP mechanical fit, industrial temperature support (–40°C to +85°C), and compatibility with pipelined address advance (ADV) and cache coherency interfaces (ADSC/ADSP).

Technical Context

This SRAM implements a synchronous, clock-driven architecture with registered address, data, and control inputs. Its internal burst counter generates four sequential addresses per initial address, with order determined by LBO state-linear (LBO = LOW) or interleaved (LBO = HIGH). All reads are pipelined: first output appears one clock cycle after address latch, subsequent bursts align to rising CLK edges.

Write operations support global (GW) or byte-level (BW1–BW4 + BWE) control, with self-timed write cycles gated by CE, CS0/CS1, and ADSP/ADSC status signals. Power management includes asynchronous ZZ sleep mode (30–35 µA standby current) and synchronous deselection for low-power idle states.

Key Specifications

Pinout & Package

71V25761S183PFGI is packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), designated PKG100, with 0.5 mm pitch and 14 mm × 20 mm footprint. Pin 1 is located at top-left corner (notch-marked side), and pin numbering proceeds counterclockwise.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1315KV18-167BZC and AS7C3256A-15JIN, the 71V25761S183PFGI uniquely delivers 36-bit-wide pipelined burst operation at 183 MHz with industrial temperature support-enabling single-chip, low-jitter buffering unattainable with narrower or asynchronous alternatives.

Availability

71V25761S183PFGI is available at Aetrix Electronics and suitable for telecom infrastructure, industrial PLCs, and radar signal processing applications requiring stable component supply, long-term lifecycle assurance, and guaranteed industrial temperature performance.

Supply support for 71V25761S183PFGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V25761S183PFGI belongs to Renesas' high-speed synchronous SRAM product line, engineered specifically for deterministic, low-latency data buffering in networking, telecom, and real-time control systems demanding burst throughput and industrial reliability.

FAQ

What is the maximum supported clock frequency for the 71V25761S183PFGI?

The 71V25761S183PFGI is rated for up to 183 MHz operation, corresponding to a 5.5 ns clock cycle time and 3.3 ns clock-to-data (tCD) access time. This speed grade is validated across the full industrial temperature range (–40°C to +85°C) and requires adherence to specified setup/hold times for all synchronous inputs relative to CLK.

Does the 71V25761S183PFGI support both linear and interleaved burst modes?

Yes, the 71V25761S183PFGI supports both linear and interleaved 4-word burst sequences via the LBO (Linear/Interleaved Burst Order) pin. When LBO is LOW, the burst follows linear order (0,1,2,3); when HIGH, it follows interleaved order (0,2,1,3). LBO is a static DC input and must remain stable during burst operation.

How does the ZZ pin function in the 71V25761S183PFGI?

The ZZ pin on the 71V25761S183PFGI is an asynchronous sleep mode input. When driven HIGH, it gates the internal clock and reduces supply current to ≤35 µA (industrial grade) while retaining memory contents. The pin has an internal pull-down, so it defaults to active mode if left unconnected.

What package type and pin count does the 71V25761S183PFGI use?

The 71V25761S183PFGI uses a 100-pin plastic thin quad flatpack (TQFP), also designated PKG100, with 0.5 mm pitch and 14 mm × 20 mm body dimensions. It conforms to JEDEC standards and is optimized for surface-mount assembly with thermal vias for core power dissipation.

Can the 71V25761S183PFGI perform byte-level writes?

Yes, the 71V25761S183PFGI supports byte-level writes using the BWE (Byte Write Enable) and BW1–BW4 (Byte Write Select) inputs. BW1 controls I/O0–I/O7 + I/OP1 (9 bits), BW2 controls I/O8–I/O15 + I/OP2, and so on. When BWE is LOW, active BWx signals gate corresponding byte writes; all outputs are disabled during byte-write cycles.