My Inquiry
My Account
Renesas 71V25761S183PFGI8
- Part No.:
- 71V25761S183PFGI8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
71V25761S183PFGI8.pdf
- Description:
- IC SRAM 4.5MBIT PAR 100TQFP
- Quantity:
- Payment:
- Shipping:
Inventory:3,972
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
71V25761S183PFGI8 from Renesas Electronics is a 128K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, 2.5V I/O, burst counter, and single-cycle deselect. It operates at 183MHz (3.3ns clock access time), supports industrial temperature range (–40°C to +85°C), and features linear/interleaved burst mode via LBO input. Used in high-speed networking line cards for packet buffering.
For engineers reviewing the 71V25761S183PFGI8 datasheet, 71V25761S183PFGI8 pinout, 71V25761S183PFGI8 application, or 71V25761S183PFGI8 equivalent, key selection criteria include burst-mode timing compliance, 2.5V I/O voltage compatibility with ASIC/FPGA interfaces, ZZ-controlled sleep mode power reduction, and TQFP-100 package thermal performance in dense PCB layouts.
Technical Context
This SRAM implements a synchronous, clock-driven architecture with registered address, data, and control inputs. Its internal burst address counter-driven by ADV and configured by LBO-enables four-word burst sequences per address, with pipelined output staging delivering first data on the second clock edge.
The device supports dual write control schemes: global write (GW) for full 36-bit writes and byte-write enable (BWE) with BW1–BW4 for selective 9-bit writes. Power management includes asynchronous ZZ sleep mode (30–35µA ISB2), self-timed write cycles, and 3.3V core / 2.5V I/O supply separation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36 bits = 4.608 Mbit; provides 36-bit wide data path for parallel bus architectures like PCI-X or legacy RISC processor caches. |
| Clock Frequency | 183 MHz; enables 5.46 ns minimum clock cycle (tCYC), supporting real-time packet processing in telecom backplanes. |
| Access Time | 3.3 ns clock-to-data (tCD); guarantees deterministic read latency critical for synchronous pipeline alignment in FPGA-based systems. |
| I/O Voltage | 2.5 V (VDDQ); matches LVCMOS25 I/O standards of Xilinx Virtex-4/5 and Altera Stratix II/III FPGAs without level-shifting. |
| Operating Temperature | –40°C to +85°C (Industrial grade); validated for deployment in uncontrolled ambient environments such as outdoor base stations and industrial controllers. |
| Power Supply | 3.3 V core (VDD), ±5% tolerance; decoupling design must accommodate peak IDD of 340 mA at 183 MHz under full load. |
| Package | 100-pin TQFP (14 mm × 20 mm, PKG100); JEDEC-compliant footprint with 0.5 mm pitch, suitable for automated SMT assembly and thermal vias under exposed pad. |
Pinout & Package
71V25761S183PFGI8 is housed in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), designated PKG100, measuring 14 mm × 20 mm with 0.5 mm lead pitch. The package includes exposed thermal pad (non-electrical) and supports reflow soldering per IPC/JEDEC J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | Synchronous 18-bit address bus; latched on rising CLK edge when ADSP or ADSC is asserted low with CE active. |
| CLK | Master Clock Input | Single-ended CMOS clock reference; all internal registers and timing are synchronized to this edge-triggered signal. |
| CE, CS0, CS1 | Chip Enable / Selects | Three-level chip select hierarchy: CE (active-low sync), CS0 (active-high sync), CS1 (active-low sync) - enables multi-chip memory banking. |
| GW, BWE, BW1–BW4 | Write Control Inputs | GW enables full 36-bit writes; BWE gates BW1–BW4, each controlling one 9-bit byte (I/O0–7+I/OP1, etc.) for partial writes without bus contention. |
| ADV, ADSP, ADSC, LBO | Burst & Address Control | ADV advances internal burst counter; ADSP/ADSC indicate processor/cache address validity; LBO selects linear vs. interleaved burst order (static, DC-coupled). |
| OE | Output Enable | Asynchronous control: drives I/O pins to high-Z when high, enabling shared-bus operation without clock-domain constraints. |
| ZZ | Sleep Mode Input | Asynchronous high-active signal that gates internal clock and reduces current to ≤35 µA; retains data during low-power standby. |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O Terminals | 36-bit bidirectional synchronous data bus; registered input/output paths ensure setup/hold compliance at 183 MHz. |
| VDD, VDDQ, VSS | Power & Ground | VDD = 3.3V core supply; VDDQ = 2.5V I/O supply; separate planes required to prevent noise coupling between logic and interface domains. |
Key Features
| Feature | Design Value |
|---|---|
| Pipelined Burst Outputs | First output data appears on second clock edge; subsequent burst words align to consecutive rising edges - eliminates wait states in high-throughput streaming applications. |
| Single-Cycle Deselect | Device enters high-impedance state within one clock cycle after chip select deactivation - prevents bus contention during rapid memory bank switching. |
| Self-Timed Write Cycle | Internal write timing is automatically adjusted based on process/voltage/temperature; eliminates external write pulse generation and simplifies controller logic. |
| Linear/Interleaved Burst Mode | LBO pin selects burst address sequence (e.g., 0x00→0x01→0x02→0x03 for linear; 0x00→0x02→0x01→0x03 for interleaved), optimizing cache line fill for specific CPU architectures. |
| 2.5V I/O with 3.3V Core | Enables direct interfacing with 2.5V logic families while maintaining higher core voltage for speed/power trade-off - reduces I/O power by ~40% vs. 3.3V-only designs. |
Applications
| Telecom Line Card Buffering | Industrial PLC Data Logging |
|---|---|
|
Use Scenario: High-speed packet buffering in 10G Ethernet line cards where burst reads/writes handle variable-length frames with minimal latency jitter. IC Role / Device Role / Timing Role: Primary synchronous buffer between SERDES PHY and traffic manager ASIC; provides deterministic 3.3ns tCD and pipelined burst delivery. Use Value: Enables zero-drop frame handling at line rate by sustaining 183 MHz sustained throughput across 36-bit bus, reducing need for external FIFOs. |
Use Scenario: Cyclic data acquisition and timestamped storage in programmable logic controllers operating in harsh factory environments. IC Role / Device Role / Timing Role: Non-volatile shadow RAM for retaining configuration and sensor history during brownouts; leverages ZZ sleep mode for <35 µA retention current. Use Value: Guarantees data integrity over –40°C to +85°C without battery backup, eliminating maintenance overhead in sealed enclosures. |
| Test Equipment Pattern Memory | Avionics Data Recorder |
|
Use Scenario: Storing stimulus/response patterns in automated test equipment requiring precise timing repeatability and fast random access. IC Role / Device Role / Timing Role: High-speed pattern store accessed via FPGA-controlled address bus; uses single-cycle deselect to support rapid vector switching. Use Value: Eliminates timing uncertainty in pattern sequencing - tCHZ and tOHZ specs ensure clean bus release within 3.3 ns of OE deassertion. |
Use Scenario: Recording flight telemetry (attitude, engine parameters) in certified avionics black boxes with strict DO-160 environmental compliance. IC Role / Device Role / Timing Role: Radiation-tolerant (qualified) SRAM buffer between ADC interface and flash storage; operates reliably under vibration and thermal cycling. Use Value: Industrial-grade temperature rating and robust TQFP packaging meet RTCA DO-160 Section 22 shock/vibe requirements without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1371DV33-183AXC | 128K × 36, 3.3V core, 3.3V I/O; no 2.5V I/O option; same TQFP-100 package; 183 MHz, 3.3 ns tCD. | Requires level shifters for 2.5V FPGA I/O; higher I/O power consumption; identical burst functionality and timing. | Select when system uses only 3.3V I/O rails and cost sensitivity outweighs power savings from 2.5V I/O. |
| AS7C33128P33A-183BIN | 128K × 36, 3.3V core/IO; supports 166/183/200 MHz; TQFP-100; industrial temp; no ZZ sleep mode (ISB2 = 110 mA). | Lacks asynchronous sleep mode - unsuitable for low-duty-cycle logging or battery-backed systems requiring µA standby. | Choose for cost-sensitive industrial controls where continuous operation dominates and sleep mode is unnecessary. |
Compared with CY7C1371DV33-183AXC and AS7C33128P33A-183BIN, the 71V25761S183PFGI8 uniquely delivers 2.5V I/O compatibility and sub-35 µA ZZ sleep current - critical for mixed-voltage FPGA systems and energy-constrained embedded recorders.
Availability
71V25761S183PFGI8 is available at Aetrix Electronics and suitable for telecom infrastructure, industrial automation, and aerospace data recording requiring stable component supply, long-term lifecycle assurance, and industrial-temperature qualification.
Supply support for 71V25761S183PFGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The 71V25761S183PFGI8 belongs to Renesas' high-speed synchronous SRAM product line, engineered for deterministic timing, low-latency burst access, and robust operation in mission-critical embedded systems.
FAQ
What is the maximum supported clock frequency for the 71V25761S183PFGI8?
The 71V25761S183PFGI8 is rated for 183 MHz operation, corresponding to a 5.46 ns minimum clock cycle (tCYC) and 3.3 ns clock-to-data access time (tCD). This speed grade is validated across the full industrial temperature range (–40°C to +85°C) and requires adherence to specified setup/hold times for all synchronous inputs relative to CLK.
Does the 71V25761S183PFGI8 support both linear and interleaved burst modes?
Yes, the 71V25761S183PFGI8 supports both burst modes via the LBO (Linear/Interleaved Burst Order) pin. When LBO is driven LOW, linear addressing (0x00→0x01→0x02→0x03) is selected; when HIGH, interleaved addressing (0x00→0x02→0x01→0x03) is used. LBO is a static DC input and must remain stable during burst operation.
How does the ZZ pin function in the 71V25761S183PFGI8?
The ZZ pin on the 71V25761S183PFGI8 is an asynchronous high-active input that places the device into full sleep mode, reducing supply current to ≤35 µA while retaining memory contents. Internal clock gating occurs immediately upon ZZ assertion, and tZZR (recovery time) is guaranteed at 100 ns before normal operation resumes.
What are the power supply requirements for the 71V25761S183PFGI8?
The 71V25761S183PFGI8 requires two independent supplies: VDD = 3.3 V ±5% for the core logic, and VDDQ = 2.5 V ±5% for the I/O interface. These must be decoupled separately; mixing or sharing planes risks timing violations and increased EMI due to I/O switching noise coupling into the core domain.
Is the 71V25761S183PFGI8 pin-compatible with other speed grades in the same family?
Yes, all 71V25761S-x-PFGI8 variants (166/183/200 MHz) share identical 100-pin TQFP (PKG100) pinout, package dimensions, and electrical interface. Speed binning is achieved through internal characterization - allowing drop-in replacement during design validation or production ramp without PCB revision.
71V25761S183PFGI8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 100-LQFP
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 183 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.3 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x20)
71V25761S183PFGI8 FAQ
1.How can I place an order for 71V25761S183PFGI8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V25761S183PFGI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V25761S183PFGI8 reliable?
The price and inventory of 71V25761S183PFGI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V25761S183PFGI8 is usually 5 days.
3.What payment methods are accepted for 71V25761S183PFGI8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V25761S183PFGI8 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V25761S183PFGI8?
71V25761S183PFGI8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V25761S183PFGI8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V25761S183PFGI8?
For technical support, including 71V25761S183PFGI8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V25761S183PFGI8 requirements.
6.How does Aetrix verify that 71V25761S183PFGI8 is sourced from the original manufacturer or authorized distributors?
All 71V25761S183PFGI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V25761S183PFGI8 meets industry standards.
7.What is the process for return or replacement of 71V25761S183PFGI8?
All 71V25761S183PFGI8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V25761S183PFGI8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V25761S183PFGI8 part is unused and in its original packaging.
Return procedure for 71V25761S183PFGI8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V25761S183PFGI8 Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
