Renesas 71V25761S200PFG

Overview

71V25761S200PFG from Renesas Electronics is a 128K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, burst counter, and single-cycle deselect. It operates at 200MHz (3.1ns clock access time), supports 2.5V I/O, and features linear/interleaved burst mode via LBO input. Used in high-speed networking line cards for packet buffering.

For engineers reviewing the 71V25761S200PFG datasheet, 71V25761S200PFG pinout, 71V25761S200PFG application, or 71V25761S200PFG equivalent, key selection criteria include burst-mode timing compliance, 100-pin TQFP footprint compatibility, 3.3V core / 2.5V I/O voltage separation, industrial-grade thermal margin, and ZZ-controlled sleep mode power reduction.

Technical Context

This SRAM implements a synchronous, clock-driven architecture with registered address, data, and control inputs. Its internal burst counter generates four sequential addresses per initial address, supporting both linear and interleaved sequences selected by the asynchronous LBO pin. Pipelined output registers deliver first-word data one clock cycle after address latching.

The device uses self-timed write cycles controlled by GW (global write), BWE (byte write enable), and BW1–BW4 (individual byte enables), allowing selective 9-bit writes across its 36-bit data bus. Chip enable (CE), dual chip selects (CS0/CS1), and asynchronous OE/ZZ inputs provide flexible system-level control and low-power management.

Key Specifications

Pinout & Package

71V25761S200PFG is packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), designated PKG100, with 0.5 mm pitch and 14 mm × 20 mm body size.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1371DV25-200AXC and AS7C312836B-200BIN, the 71V25761S200PFG offers superior burst configurability (LBO-selectable mode), faster ZZ recovery (100 ns), and lowest active current among commercial-grade 200 MHz variants - making it optimal for latency-critical telecom and test equipment.

Availability

71V25761S200PFG is available at Aetrix Electronics and suitable for telecom infrastructure, network packet buffering, and digital signal processing applications requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant green packaging.

Supply support for 71V25761S200PFG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and enterprise systems.

The 71V25761S200PFG belongs to Renesas' high-speed synchronous SRAM product line, engineered for deterministic low-latency memory access in bandwidth-intensive infrastructure equipment such as routers, switches, and baseband units.

FAQ

What is the maximum clock frequency supported by the 71V25761S200PFG?

The 71V25761S200PFG is rated for 200 MHz operation, corresponding to a 5 ns clock cycle time and 3.1 ns clock-to-output access time (tCD). This speed is guaranteed over the commercial temperature range (0°C to +70°C) with VDD = 3.3 V ±5% and VDDQ = 2.5 V ±5%. The 71V25761S200PFG does not support overclocking beyond this specification.

Does the 71V25761S200PFG support both linear and interleaved burst modes?

Yes, the 71V25761S200PFG supports both burst modes via the LBO (Linear/Interleaved Burst Order) pin. When LBO is driven LOW, the device executes linear burst (0,1,2,3); when HIGH, it executes interleaved burst (0,2,1,3). LBO is asynchronous and static - it must remain stable during burst operation to avoid undefined address sequencing in the 71V25761S200PFG.

How does the 71V25761S200PFG handle power-down and sleep states?

The 71V25761S200PFG supports two low-power states: standby (via CE/CS deassertion, ISB1 = 30 mA) and full sleep (via ZZ HIGH, IZZ = 30 mA). In sleep mode, the internal clock is gated but data retention is guaranteed. Recovery from sleep requires tZZR = 100 ns before valid reads resume. The 71V25761S200PFG retains all stored data in both states.

What is the function of the ADV pin on the 71V25761S200PFG?

The ADV (Burst Address Advance) pin controls progression of the internal burst counter. When ADV is LOW, the counter increments after each burst word, enabling full four-word burst transfers. When ADV is HIGH, burst advancement halts - allowing repeated access to the same address or controlled partial bursts. ADV is sampled synchronously on the rising CLK edge in the 71V25761S200PFG.

Is the 71V25761S200PFG pin-compatible with industrial temperature variants?

Yes, the 71V25761S200PFG shares identical pinout, package (PKG100 TQFP), and electrical interface with its industrial-grade counterpart 71V25761S200PFGI. Both operate at 200 MHz with identical timing parameters and control logic. The only difference is temperature qualification: 71V25761S200PFG is commercial grade (0°C to +70°C), while 71V25761S200PFGI is industrial grade (–40°C to +85°C).