Renesas 71V25761S200PFG8

Overview

71V25761S200PFG8 from Renesas Electronics is a 128K × 36-bit synchronous SRAM with pipelined outputs, burst counter, and single-cycle deselect. It operates at 200 MHz (3.1 ns clock access), supports 3.3 V core and 2.5 V I/O, and features linear/interleaved burst mode via LBO input. Used in high-speed networking line cards for packet buffering and cache coherency.

For engineers reviewing the 71V25761S200PFG8 datasheet, 71V25761S200PFG8 pinout, 71V25761S200PFG8 application, or 71V25761S200PFG8 equivalent, key selection criteria include burst-mode timing compliance, 100-pin TQFP footprint compatibility, industrial-grade temperature support (-40°C to +85°C), and ZZ-controlled sleep mode power management.

Technical Context

This SRAM implements a synchronous interface with registered address, data, and control inputs triggered on the rising edge of CLK. Its internal burst address counter enables four-word burst reads/writes per address, with sequence order determined by LBO state (linear or interleaved) and ADV signal control.

The device integrates self-timed write logic using GW, BWE, and BW1–BW4 for global or byte-level writes, and supports pipelined output with one-cycle latency. Power-down is managed asynchronously via ZZ, while OE provides asynchronous output enable control independent of clock timing.

Key Specifications

Pinout & Package

Packaged in JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body size, 0.5 mm pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1371DV25-200AXC and AS7C33128PFS-200BIN, the 71V25761S200PFG8 uniquely combines selectable burst order (LBO), full ZZ sleep mode, and industrial temperature qualification - making it optimal for thermally demanding, power-aware, and protocol-flexible embedded systems.

Availability

71V25761S200PFG8 is available at Aetrix Electronics and suitable for high-speed networking equipment, industrial PLCs, and radar signal processing systems requiring stable component supply across commercial and industrial temperature grades.

Supply support for 71V25761S200PFG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V25761S200PFG8 belongs to Renesas' high-performance synchronous SRAM product line, designed specifically for deterministic, low-latency memory subsystems in networking, test equipment, and real-time control applications.

FAQ

What is the maximum clock frequency supported by the 71V25761S200PFG8?

The 71V25761S200PFG8 is rated for 200 MHz operation with a 5 ns clock cycle time and 3.1 ns clock-to-data (tCD) access time. This specification applies to the commercial temperature range (0°C to +70°C). For industrial-grade operation (-40°C to +85°C), the device supports up to 183 MHz (3.3 ns tCD) and 166 MHz (3.5 ns tCD), as confirmed in the AC Electrical Characteristics table of the Renesas datasheet.

Does the 71V25761S200PFG8 support both linear and interleaved burst modes?

Yes, the 71V25761S200PFG8 supports both linear and interleaved burst sequences via the LBO (Linear/Interleaved Burst Order) pin. When LBO is driven LOW, the device executes linear burst order (0,1,2,3); when LBO is HIGH, it uses interleaved order (0,2,1,3). The LBO pin is asynchronous and static - it must remain stable during burst operation, as stated in the Pin Definitions table and Burst Sequence Tables.

What power supply voltages does the 71V25761S200PFG8 require?

The 71V25761S200PFG8 requires two independent supply rails: VDD = 3.3 V ±5% for the core logic and VDDQ = 2.5 V ±5% for the I/O interface. These are specified in the Recommended Operating Conditions table. The separation enables clean 2.5 V signaling to FPGAs or ASICs while maintaining higher core voltage for speed, and is mandatory for correct functionality - mixing or omitting either rail will cause malfunction.

How does the ZZ pin function in the 71V25761S200PFG8?

The ZZ pin on the 71V25761S200PFG8 is an asynchronous active-HIGH sleep mode input. When asserted HIGH, it gates the internal clock and reduces supply current to 30 µA (IZZ), while guaranteeing data retention. The pin has an internal pull-down, ensuring safe default behavior during power-up or floating conditions. Recovery from sleep requires tZZR ≥ 100 ns after ZZ returns LOW, as defined in the AC Electrical Characteristics table.

Is the 71V25761S200PFG8 available in industrial temperature grade?

Yes, the 71V25761S200PFG8 is offered in industrial temperature grade (-40°C to +85°C), as confirmed in the Ordering Information table and Absolute Maximum Ratings section. While the "PFG8" suffix denotes tape-and-reel packaging and commercial temperature, the industrial variant is the pin-compatible 71V25761S200PFGI8. Both share identical electrical specs except for speed grading: the industrial version is characterized up to 183 MHz (not 200 MHz) at full temperature range.