Renesas 71V25761YS200PFG

Overview

71V25761YS200PFG from Renesas Electronics is a 128K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, burst counter, and single-cycle deselect. It operates at 200MHz (3.1ns clock access), supports 2.5V I/O, and features linear/interleaved burst mode via LBO input. Used in high-speed networking and telecom data buffering where deterministic latency and burst throughput are critical.

For engineers reviewing the 71V25761YS200PFG datasheet, 71V25761YS200PFG pinout, 71V25761YS200PFG application, or 71V25761YS200PFG equivalent, this page delivers verified timing parameters, JEDEC-standard TQFP-100 package mapping, burst-mode control logic, power-down behavior under ZZ, and validated alternative SRAMs for memory subsystem redesign.

Technical Context

This SRAM implements a synchronous, clock-driven architecture with registered address, data, and control inputs. Its internal burst counter advances on ADV=LOW and selects sequence order (linear or interleaved) via static LBO configuration - no runtime reconfiguration permitted. All read/write cycles are fully pipelined: first output appears one clock cycle after address latch, with subsequent burst words delivered on consecutive rising CLK edges.

The device integrates independent write enable hierarchy: global write (GW) overrides byte write enables (BWE + BW1–BW4), enabling full 36-bit writes or selective 9-bit byte writes. Power management includes asynchronous ZZ-controlled sleep mode (IZZ ≤ 35mA) and synchronous standby modes (ISB1 ≤ 35mA), with guaranteed data retention during sleep.

Key Specifications

Pinout & Package

71V25761YS200PFG is packaged in a 100-pin plastic thin quad flatpack (TQFP), JEDEC MO-147AC, 14 mm × 20 mm body size, 0.5 mm lead pitch. Pin 1 is located at top-left corner (marking dot adjacent), with pins numbered counterclockwise.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1371DV33-200AXC and AS7C33128PFS-200BIN, the 71V25761YS200PFG uniquely delivers 2.5V I/O compatibility, pipelined burst reads, and single-cycle deselect - essential for high-throughput, low-latency embedded memory subsystems where voltage translation and deterministic timing are non-negotiable.

Availability

71V25761YS200PFG is available at Aetrix Electronics and suitable for high-speed network line cards, telecom baseband processing, and industrial real-time controllers requiring stable component supply across extended product lifecycles.

Supply support for 71V25761YS200PFG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, infrastructure, and IoT applications.

The 71V25761YS200PFG belongs to Renesas' legacy high-speed synchronous SRAM family, designed specifically for deterministic, low-latency data buffering in communications and real-time control systems demanding burst throughput and precise timing control.

FAQ

What is the maximum operating frequency and corresponding access time for the 71V25761YS200PFG?

The 71V25761YS200PFG is rated for 200 MHz operation with a clock cycle time (tCYC) of 5 ns and a clock-to-data valid delay (tCD) of 3.1 ns. This specification applies to commercial temperature range (0°C to +70°C) and is guaranteed under VDD = 3.3 V ±5%, VDDQ = 2.5 V ±5%. The 71V25761YS200PFG achieves this performance using pipelined output registers and synchronous burst addressing.

Does the 71V25761YS200PFG support both linear and interleaved burst modes, and how is the mode selected?

Yes, the 71V25761YS200PFG supports both linear and interleaved 4-word burst sequences. The mode is selected by the LBO (Linear Burst Order) pin: LBO = LOW configures linear order (0,1,2,3), while LBO = HIGH selects interleaved order (0,2,3,1). LBO is an asynchronous static input and must remain stable during device operation - it cannot be toggled mid-burst.

How does the 71V25761YS200PFG handle power management, and what is the sleep current?

The 71V25761YS200PFG implements three power states: active, standby, and full sleep. Sleep mode is entered asynchronously via the ZZ pin (HIGH), which gates the internal clock and reduces supply current to ≤35 mA (IZZ) while guaranteeing data retention. Standby current (ISB1) is ≤35 mA with clocks halted and chip deselected. The 71V25761YS200PFG requires no external refresh in sleep mode.

What are the voltage requirements for VDD and VDDQ on the 71V25761YS200PFG?

The 71V25761YS200PFG requires VDD = 3.3 V ±5% (3.135 V to 3.465 V) for the core logic and memory array, and VDDQ = 2.5 V ±5% (2.375 V to 2.625 V) for the I/O buffers. These are independent supplies; VDDQ must not exceed VDD + 0.5 V. The 71V25761YS200PFG uses separate rails to optimize I/O signal integrity while maintaining core speed and noise immunity.

Is the 71V25761YS200PFG pin-compatible with other members of the 71V25761 family, such as the 166 MHz or 183 MHz variants?

Yes, all speed grades of the 71V25761 family - including 71V25761S166PFG, 71V25761S183PFG, and 71V25761S200PFG - share identical pinout, package (TQFP-100), and functional interface. The 71V25761YS200PFG differs only in AC timing specifications and maximum rated frequency; no PCB layout change is needed when upgrading from slower variants within the same temperature grade.