Renesas 71V30L35TFGI8

Overview

71V30L35TFGI8 from Renesas Electronics (formerly IDT) is a high-speed, low-power 1K × 8 dual-port static RAM with independent left/right ports, on-chip arbitration logic, interrupt flags, and battery-backed data retention down to 2V. It operates at 3.3V ±0.3V, supports industrial temperature range (−40°C to +85°C), and delivers 35ns max access time for real-time inter-processor communication in embedded control systems.

For engineers reviewing the 71V30L35TFGI8 datasheet, 71V30L35TFGI8 pinout, 71V30L35TFGI8 application, or 71V30L35TFGI8 equivalent, this page provides verified technical context, validated pin functions, confirmed power and timing specifications, and two rigorously cross-referenced alternative parts for dual-port SRAM selection in deterministic real-time systems.

Technical Context

The 71V30L35TFGI8 implements fully asynchronous dual-port operation with separate address, control, and I/O buses per port-enabling concurrent read/write access without external synchronization. Its on-chip arbitration logic resolves contention via BUSY outputs (non-tristatable push-pull), while dedicated INTL/INTR flags support mailbox-style inter-port messaging using fixed addresses 3FEh (left) and 3FFh (right).

It features automatic power-down controlled by CE pins per port, achieving 1μA typical full-standby current (ISB3) under CMOS-level inputs and 2V data retention-critical for fail-safe backup in industrial controllers. All timing parameters-including tRC = 35ns, tAA = 35ns, and tBDD ≤ 30ns-are specified over −40°C to +85°C and validated for industrial-grade reliability.

Key Specifications

Pinout & Package

71V30L35TFGI8 is housed in a 64-pin STQFP (PPG64) package with exposed thermal pad, measuring 10 mm × 10 mm × 1.4 mm. Pin 1 is located at top-left corner (see top-view diagram in datasheet Figure 3). All VCC and GND pins must be individually decoupled per layout guidelines.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-port SRAM applications.

Compared with CY7C024AV-35AXC and AS7C31025B-35TIN, the 71V30L35TFGI8 uniquely integrates hardware BUSY arbitration and mailbox interrupts in a 64-pin footprint-reducing BOM count, eliminating timing-critical software locks, and enabling certified safety architectures without external components.

Availability

71V30L35TFGI8 is available at Aetrix Electronics and suitable for industrial motion control, redundant PLC communication, avionics data acquisition, and railway signaling applications requiring stable component supply across extended product lifecycles.

Supply support for 71V30L35TFGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The 71V30L35TFGI8 belongs to Renesas' legacy IDT dual-port SRAM family, engineered specifically for deterministic inter-processor communication in safety-critical and real-time embedded systems requiring hardware-enforced memory coherency.

FAQ

What is the guaranteed maximum access time for 71V30L35TFGI8 across its full operating temperature range?

The 71V30L35TFGI8 guarantees a maximum access time (tAA) of 35 ns over the full industrial temperature range of −40°C to +85°C and supply voltage of 3.3 V ±0.3 V. This value is production-tested and applies to both left and right ports independently, ensuring deterministic latency for real-time firmware execution. The 35 ns specification includes worst-case process, voltage, and temperature corners as validated in the official Renesas datasheet DSC3741/14.

Does 71V30L35TFGI8 support true hardware arbitration between ports, and how is it implemented?

Yes, the 71V30L35TFGI8 implements true hardware arbitration via dedicated BUSYL and BUSYR outputs-non-tristatable push-pull signals that assert when both ports attempt simultaneous access to the same memory location. When BUSY is active, the write operation on the contending port is internally gated and ignored, eliminating race conditions without software intervention. This logic is fully self-contained within the 71V30L35TFGI8 die and requires no external components.

Can 71V30L35TFGI8 retain data during main power loss, and what are the conditions?

Yes, the 71V30L35TFGI8 supports battery backup data retention at VCC ≥ 2.0 V, with typical retention current of 100 µA (industrial grade) at 2 V and +25°C. Data remains valid indefinitely under these conditions, and the device maintains retention across the full −40°C to +85°C temperature range. This capability is exclusive to the "L" (low-power) variant and is not available in the "S" (standard) version of the 71V30 family.

What are the exact interrupt mailbox addresses for 71V30L35TFGI8, and how do they operate?

The 71V30L35TFGI8 uses fixed interrupt mailbox addresses: writing to address 3FEh (hex) on the right port asserts the left-port INTL flag, and writing to 3FFh (hex) on the left port asserts the right-port INTR flag. Clearing is performed by reading the same address with CE and OE asserted-no additional control registers or configuration is needed. These locations remain accessible as general SRAM when interrupts are unused.

Is 71V30L35TFGI8 pin-compatible with other speed grades in the same package, such as 71V30L25TFG?

Yes, all 71V30L variants in the PPG64 (64-pin STQFP) package-including 71V30L25TFG, 71V30L35TFGI8, and 71V30L55TFG-are mechanically and electrically pin-compatible. They share identical pinouts, voltage levels, and control signal definitions. The only differences are timing specifications (e.g., tAA = 25 ns vs. 35 ns) and temperature grading (commercial vs. industrial), allowing direct substitution where timing margins permit.