Renesas 71V3556S100PFG8
- Part No.:
- 71V3556S100PFG8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
71V3556S100PFG8.pdf
- Description:
- IC SRAM 4.5MBIT PARALLEL 100TQFP
- Quantity:
- Payment:

- Shipping:

Inventory:3,923
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Product details
Overview
71V3556S100PFG8 from IDT (now Renesas) is a 3.3V synchronous ZBT™ SRAM with 128K × 36-bit organization (4.5 Mbit), 166 MHz operation, 3.5 ns clock-to-data access, zero bus turnaround architecture, and pipelined outputs in a 100-pin TQFP package. It enables high-bandwidth memory interfacing in network packet buffers and cache subsystems.
For engineers reviewing the 71V3556S100PFG8 datasheet, 71V3556S100PFG8 pinout, 71V3556S100PFG8 application, or 71V3556S100PFG8 equivalent, key selection criteria include ZBT™ burst timing, 4-word interleaved/linear burst capability, individual byte write control (BW1–BW4), JTAG support (optional), and industrial temperature range compatibility.
Technical Context
The 71V3556S100PFG8 implements a fully synchronous, positive-edge-triggered architecture with address/control/data registers clocked on CLK rising edge. Its ZBT™ feature eliminates dead cycles between read/write transitions via internal burst counter and ADV/LD-controlled address loading or incrementing.
It supports dual-bus-turnaround modes: linear or interleaved burst sequences selected by LBO pin, and features three chip enables (CE1, CE2, CE2) for depth expansion, plus asynchronous OE for output tri-state control independent of clock timing.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.5 Mbit); supports high-density data buffering without external width expansion |
| Max Clock Frequency | 166 MHz; enables 166 MT/s throughput in fully pipelined systems |
| Clock-to-Data Access | 3.5 ns; guarantees deterministic read latency two cycles after address load |
| Burst Capability | 4-word burst (interleaved or linear); reduces address bus traffic and improves bandwidth efficiency |
| Supply Voltage | VDD = 3.3 V ±5%, VDDQ = 3.3 V ±5%; compatible with standard 3.3V logic interfaces |
| Operating Temperature | –40°C to +85°C (industrial grade); suitable for telecom and industrial embedded environments |
| Package | 100-pin TQFP (14 mm × 20 mm, JEDEC standard); surface-mount compatible with automated assembly |
Pinout & Package
71V3556S100PFG8 is packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body size, with 0.5 mm pitch leads.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CLK | Clock input | Positive-edge-triggered master timing reference for all synchronous operations |
| A0–A16 | Address inputs | 17-bit address bus supporting 128K depth; latched on rising CLK edge with ADV/LD low |
| R/W | Read/Write control | Synchronous signal defining cycle type; determines data direction two cycles later |
| ADV/LD | Address advance/load | Controls burst counter (HIGH) or loads new external address (LOW); critical for burst sequencing |
| BW1–BW4 | Byte write enables | Four independent active-low signals enabling selective 9-bit byte writes within 36-bit word |
| CE1, CE2, CE2 | Chip enable inputs | Three enables (CE1/CE2 active-low, CE2 active-high) for flexible depth expansion and deselect control |
| OE | Output enable | Asynchronous control for I/O tri-state; allows output disabling at any time without clock dependency |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional synchronous data bus with registered input/output paths |
| LBO | Burst order select | Static input selecting linear (LOW) or interleaved (HIGH) 4-word burst sequence |
| ZZ | Sleep mode | Active-high synchronous input gating internal clock to minimize power while retaining data |
Key Features
| Feature | Design Value |
|---|---|
| ZBT™ Zero Bus Turnaround | Eliminates idle cycles between consecutive read/write operations, enabling continuous bus utilization |
| Pipelined output buffer | Internally synchronized OE eliminates need for external OE timing control in high-speed designs |
| 4-word burst counter | Reduces address bus activity by 75% per burst; supports both linear and interleaved addressing |
| Individual byte write control | Enables precise 9-bit sub-word updates without masking or read-modify-write overhead |
| JTAG boundary scan (IEEE 1149.1) | Optional test interface for board-level validation and in-system debugging (available in BGA variants) |
Applications
| Network Packet Buffer | Cache Memory Subsystem |
|---|---|
Use Scenario: Storing ingress/egress Ethernet or ATM cell headers and payloads in switch fabric ASICs. IC Role / Device Role / Timing Role: High-speed, low-latency SRAM acting as first-level packet buffer with deterministic 3.5 ns read access. Use Value: ZBT™ architecture enables back-to-back read/write bursts without dead cycles, increasing effective throughput by up to 30% vs. conventional SSRAM. | Use Scenario: Serving as L2 cache tag RAM or instruction/data cache in RISC-based communication processors. IC Role / Device Role / Timing Role: Synchronous pipelined SRAM providing 166 MT/s random access to cache controller with burst-aligned data delivery. Use Value: 4-word burst mode matches typical cache line sizes, reducing address bus toggling and system-level power consumption. |
| Telecom Line Card Memory | Industrial Real-Time Controller Buffer |
Use Scenario: Buffering TDM voice channels and signaling data in carrier-grade DSLAM or ONU line cards. IC Role / Device Role / Timing Role: Industrial-grade (–40°C to +85°C) SRAM interfacing directly with FPGA-based framer logic. Use Value: Three chip enables (CE1/CE2/CE2) allow seamless depth expansion across multiple devices without glue logic. | Use Scenario: Holding real-time sensor fusion data and motion control command queues in CNC or PLC modules. IC Role / Device Role / Timing Role: Deterministic-access SRAM supporting hard real-time deadlines via fixed 2-cycle read/write latency. Use Value: Individual byte write (BW1–BW4) enables atomic updates to status registers without disturbing adjacent control fields. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 71V3556SA100PFG8 | Includes IEEE 1149.1 JTAG boundary scan; otherwise identical electrical and timing specs | Required for production testability in high-reliability telecom boards | Select SA version when JTAG debug/test access is mandatory; PFG8 suffix confirms same TQFP package |
| AS7C3256B-15JIN | Lower speed (15 ns access, ~66 MHz max), no ZBT™ or burst counter; CMOS async/sync hybrid | Suitable for cost-sensitive, non-pipelined control-plane buffers where latency tolerance >15 ns | Choose only if ZBT™ and burst features are unnecessary; verify pinout and voltage compatibility before substitution |
Compared with 71V3556S100PFG8, the SA variant adds JTAG for testability without performance trade-offs, while AS7C3256B-15JIN offers lower cost and power at the expense of ZBT™ efficiency and burst capability-making it viable only in non-critical throughput applications.
Availability
71V3556S100PFG8 is available at Aetrix Electronics and suitable for network packet buffers, telecom line card memory, and industrial real-time controller buffers requiring stable component supply and long-term industrial temperature support.
Supply support for 71V3556S100PFG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology), now part of Renesas Electronics, is a semiconductor company specializing in high-performance timing, memory, and interface solutions for communications and computing infrastructure.
The 71V3556S100PFG8 belongs to IDT's ZBT™ SRAM product line, designed specifically for high-throughput, low-latency memory interfacing in networking ASICs, packet switches, and real-time embedded systems demanding deterministic timing.
FAQ
What is the memory organization and total capacity of the 71V3556S100PFG8?
The 71V3556S100PFG8 is organized as 128K × 36 bits, delivering a total capacity of 4,718,592 bits (4.5 Mbit). This configuration supports 36-bit wide data paths common in high-speed packet processing and cache subsystems, eliminating the need for external width expansion in many applications.
Does the 71V3556S100PFG8 support burst read and write operations?
Yes, the 71V3556S100PFG8 supports 4-word burst operations in both linear and interleaved sequences, controlled by the LBO pin. Burst mode reduces address bus activity and improves effective bandwidth-critical for applications like network packet buffering where sequential data access dominates.
What is the function of the ADV/LD pin on the 71V3556S100PFG8?
The ADV/LD pin on the 71V3556S100PFG8 controls the internal burst counter: when sampled LOW at the rising CLK edge, it loads a new external address; when HIGH, it advances the counter to the next burst address. This dual-mode operation enables flexible burst initiation and chaining without external address generation logic.
Is JTAG boundary scan supported on the 71V3556S100PFG8?
No, the 71V3556S100PFG8 does not include JTAG boundary scan. That feature is available only on the "SA" variant (e.g., 71V3556SA100PFG8). The "S" suffix indicates the standard version without IEEE 1149.1 test circuitry, though pin-compatible with SA in TQFP packaging.
What is the role of the ZZ (Sleep Mode) pin on the 71V3556S100PFG8?
The ZZ pin on the 71V3556S100PFG8 is an active-high synchronous input that gates the internal clock and places the device into low-power sleep mode while guaranteeing data retention. When asserted, it reduces dynamic power consumption significantly-ideal for power-aware telecom and industrial applications with intermittent memory access patterns.
71V3556S100PFG8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 100-LQFP
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 100 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x14)
71V3556S100PFG8 FAQ
1.How can I place an order for 71V3556S100PFG8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3556S100PFG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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6.How does Aetrix verify that 71V3556S100PFG8 is sourced from the original manufacturer or authorized distributors?
All 71V3556S100PFG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3556S100PFG8 meets industry standards.
7.What is the process for return or replacement of 71V3556S100PFG8?
All 71V3556S100PFG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V3556S100PFG8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3556S100PFG8 part is unused and in its original packaging.
Return procedure for 71V3556S100PFG8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3556S100PFG8 Tags

-
M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology

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AT21CS01-STUM10-T
Microchip Technology

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AT24C02C-SSHM-T
Microchip Technology

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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics

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AT24CS02-SSHM-T
Microchip Technology

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93LC46BT-I/OT
Microchip Technology

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AT24C04C-SSHM-T
Microchip Technology

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24LC01BT-I/SN
Microchip Technology

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24AA02UIDT-I/OT
Microchip Technology

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AT24C08C-STUM-T
Microchip Technology
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