Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Renesas 71V3556S100PFG8

Part No.:
71V3556S100PFG8
Manufacturer:
Renesas
Category:
Memory
Package:
100-LQFP
Datasheet:
Aetrix71V3556S100PFG8.pdf
Description:
IC SRAM 4.5MBIT PARALLEL 100TQFP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,923

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

71V3556S100PFG8 from IDT (now Renesas) is a 3.3V synchronous ZBT™ SRAM with 128K × 36-bit organization (4.5 Mbit), 166 MHz operation, 3.5 ns clock-to-data access, zero bus turnaround architecture, and pipelined outputs in a 100-pin TQFP package. It enables high-bandwidth memory interfacing in network packet buffers and cache subsystems.

For engineers reviewing the 71V3556S100PFG8 datasheet, 71V3556S100PFG8 pinout, 71V3556S100PFG8 application, or 71V3556S100PFG8 equivalent, key selection criteria include ZBT™ burst timing, 4-word interleaved/linear burst capability, individual byte write control (BW1–BW4), JTAG support (optional), and industrial temperature range compatibility.

Technical Context

The 71V3556S100PFG8 implements a fully synchronous, positive-edge-triggered architecture with address/control/data registers clocked on CLK rising edge. Its ZBT™ feature eliminates dead cycles between read/write transitions via internal burst counter and ADV/LD-controlled address loading or incrementing.

It supports dual-bus-turnaround modes: linear or interleaved burst sequences selected by LBO pin, and features three chip enables (CE1, CE2, CE2) for depth expansion, plus asynchronous OE for output tri-state control independent of clock timing.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Organization128K × 36-bit (4.5 Mbit); supports high-density data buffering without external width expansion
Max Clock Frequency166 MHz; enables 166 MT/s throughput in fully pipelined systems
Clock-to-Data Access3.5 ns; guarantees deterministic read latency two cycles after address load
Burst Capability4-word burst (interleaved or linear); reduces address bus traffic and improves bandwidth efficiency
Supply VoltageVDD = 3.3 V ±5%, VDDQ = 3.3 V ±5%; compatible with standard 3.3V logic interfaces
Operating Temperature–40°C to +85°C (industrial grade); suitable for telecom and industrial embedded environments
Package100-pin TQFP (14 mm × 20 mm, JEDEC standard); surface-mount compatible with automated assembly

Pinout & Package

71V3556S100PFG8 is packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body size, with 0.5 mm pitch leads.

Pin/TerminalCircuit RoleDesign Meaning
CLKClock inputPositive-edge-triggered master timing reference for all synchronous operations
A0–A16Address inputs17-bit address bus supporting 128K depth; latched on rising CLK edge with ADV/LD low
R/WRead/Write controlSynchronous signal defining cycle type; determines data direction two cycles later
ADV/LDAddress advance/loadControls burst counter (HIGH) or loads new external address (LOW); critical for burst sequencing
BW1–BW4Byte write enablesFour independent active-low signals enabling selective 9-bit byte writes within 36-bit word
CE1, CE2, CE2Chip enable inputsThree enables (CE1/CE2 active-low, CE2 active-high) for flexible depth expansion and deselect control
OEOutput enableAsynchronous control for I/O tri-state; allows output disabling at any time without clock dependency
I/O0–I/O31, I/OP1–I/OP4Data I/O36-bit bidirectional synchronous data bus with registered input/output paths
LBOBurst order selectStatic input selecting linear (LOW) or interleaved (HIGH) 4-word burst sequence
ZZSleep modeActive-high synchronous input gating internal clock to minimize power while retaining data

Key Features

FeatureDesign Value
ZBT™ Zero Bus TurnaroundEliminates idle cycles between consecutive read/write operations, enabling continuous bus utilization
Pipelined output bufferInternally synchronized OE eliminates need for external OE timing control in high-speed designs
4-word burst counterReduces address bus activity by 75% per burst; supports both linear and interleaved addressing
Individual byte write controlEnables precise 9-bit sub-word updates without masking or read-modify-write overhead
JTAG boundary scan (IEEE 1149.1)Optional test interface for board-level validation and in-system debugging (available in BGA variants)

Applications

Network Packet BufferCache Memory Subsystem

Use Scenario: Storing ingress/egress Ethernet or ATM cell headers and payloads in switch fabric ASICs.

IC Role / Device Role / Timing Role: High-speed, low-latency SRAM acting as first-level packet buffer with deterministic 3.5 ns read access.

Use Value: ZBT™ architecture enables back-to-back read/write bursts without dead cycles, increasing effective throughput by up to 30% vs. conventional SSRAM.

Use Scenario: Serving as L2 cache tag RAM or instruction/data cache in RISC-based communication processors.

IC Role / Device Role / Timing Role: Synchronous pipelined SRAM providing 166 MT/s random access to cache controller with burst-aligned data delivery.

Use Value: 4-word burst mode matches typical cache line sizes, reducing address bus toggling and system-level power consumption.

Telecom Line Card MemoryIndustrial Real-Time Controller Buffer

Use Scenario: Buffering TDM voice channels and signaling data in carrier-grade DSLAM or ONU line cards.

IC Role / Device Role / Timing Role: Industrial-grade (–40°C to +85°C) SRAM interfacing directly with FPGA-based framer logic.

Use Value: Three chip enables (CE1/CE2/CE2) allow seamless depth expansion across multiple devices without glue logic.

Use Scenario: Holding real-time sensor fusion data and motion control command queues in CNC or PLC modules.

IC Role / Device Role / Timing Role: Deterministic-access SRAM supporting hard real-time deadlines via fixed 2-cycle read/write latency.

Use Value: Individual byte write (BW1–BW4) enables atomic updates to status registers without disturbing adjacent control fields.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
71V3556SA100PFG8Includes IEEE 1149.1 JTAG boundary scan; otherwise identical electrical and timing specsRequired for production testability in high-reliability telecom boardsSelect SA version when JTAG debug/test access is mandatory; PFG8 suffix confirms same TQFP package
AS7C3256B-15JINLower speed (15 ns access, ~66 MHz max), no ZBT™ or burst counter; CMOS async/sync hybridSuitable for cost-sensitive, non-pipelined control-plane buffers where latency tolerance >15 nsChoose only if ZBT™ and burst features are unnecessary; verify pinout and voltage compatibility before substitution

Compared with 71V3556S100PFG8, the SA variant adds JTAG for testability without performance trade-offs, while AS7C3256B-15JIN offers lower cost and power at the expense of ZBT™ efficiency and burst capability-making it viable only in non-critical throughput applications.

Availability

71V3556S100PFG8 is available at Aetrix Electronics and suitable for network packet buffers, telecom line card memory, and industrial real-time controller buffers requiring stable component supply and long-term industrial temperature support.

Supply support for 71V3556S100PFG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a semiconductor company specializing in high-performance timing, memory, and interface solutions for communications and computing infrastructure.

The 71V3556S100PFG8 belongs to IDT's ZBT™ SRAM product line, designed specifically for high-throughput, low-latency memory interfacing in networking ASICs, packet switches, and real-time embedded systems demanding deterministic timing.

FAQ

What is the memory organization and total capacity of the 71V3556S100PFG8?

The 71V3556S100PFG8 is organized as 128K × 36 bits, delivering a total capacity of 4,718,592 bits (4.5 Mbit). This configuration supports 36-bit wide data paths common in high-speed packet processing and cache subsystems, eliminating the need for external width expansion in many applications.

Does the 71V3556S100PFG8 support burst read and write operations?

Yes, the 71V3556S100PFG8 supports 4-word burst operations in both linear and interleaved sequences, controlled by the LBO pin. Burst mode reduces address bus activity and improves effective bandwidth-critical for applications like network packet buffering where sequential data access dominates.

What is the function of the ADV/LD pin on the 71V3556S100PFG8?

The ADV/LD pin on the 71V3556S100PFG8 controls the internal burst counter: when sampled LOW at the rising CLK edge, it loads a new external address; when HIGH, it advances the counter to the next burst address. This dual-mode operation enables flexible burst initiation and chaining without external address generation logic.

Is JTAG boundary scan supported on the 71V3556S100PFG8?

No, the 71V3556S100PFG8 does not include JTAG boundary scan. That feature is available only on the "SA" variant (e.g., 71V3556SA100PFG8). The "S" suffix indicates the standard version without IEEE 1149.1 test circuitry, though pin-compatible with SA in TQFP packaging.

What is the role of the ZZ (Sleep Mode) pin on the 71V3556S100PFG8?

The ZZ pin on the 71V3556S100PFG8 is an active-high synchronous input that gates the internal clock and places the device into low-power sleep mode while guaranteeing data retention. When asserted, it reduces dynamic power consumption significantly-ideal for power-aware telecom and industrial applications with intermittent memory access patterns.

71V3556S100PFG8 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
100-LQFP
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR (ZBT)
Memory Size:
4.5Mbit
Memory Organization:
128K x 36
Memory Interface:
Parallel
Clock Frequency:
100 MHz
Write Cycle Time - Word, Page:
-
Access Time:
5 ns
Voltage - Supply:
3.135V ~ 3.465V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
100-TQFP (14x14)

71V3556S100PFG8 FAQ

1.How can I place an order for 71V3556S100PFG8 through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V3556S100PFG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V3556S100PFG8 reliable?

The price and inventory of 71V3556S100PFG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3556S100PFG8 is usually 5 days.

3.What payment methods are accepted for 71V3556S100PFG8?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V3556S100PFG8 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 71V3556S100PFG8?

71V3556S100PFG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V3556S100PFG8 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V3556S100PFG8?

For technical support, including 71V3556S100PFG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3556S100PFG8 requirements.

6.How does Aetrix verify that 71V3556S100PFG8 is sourced from the original manufacturer or authorized distributors?

All 71V3556S100PFG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3556S100PFG8 meets industry standards.

7.What is the process for return or replacement of 71V3556S100PFG8?

All 71V3556S100PFG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V3556S100PFG8, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V3556S100PFG8 part is unused and in its original packaging.

Return procedure for 71V3556S100PFG8:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

71V3556S100PFG8 Tags

  • 71V3556S100PFG8
  • 71V3556S100PFG8 PDF
  • 71V3556S100PFG8 Datasheet
  • 71V3556S100PFG8 Specifications
  • 71V3556S100PFG8 Images
  • Renesas
  • Renesas 71V3556S100PFG8
  • Buy 71V3556S100PFG8
  • 71V3556S100PFG8 Price
  • 71V3556S100PFG8 Distributor
  • 71V3556S100PFG8 Supplier
  • 71V3556S100PFG8 Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER