Renesas 71V3556S133PFG8
- Part No.:
- 71V3556S133PFG8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
71V3556S133PFG8.pdf
- Description:
- IC SRAM 4.5MBIT PARALLEL 100TQFP
- Quantity:
- Payment:

- Shipping:

Inventory:1,393
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Product details
Overview
71V3556S133PFG8 from Renesas is a 3.3V, 128K × 36-bit (4.5 Mbit) synchronous ZBT™ SRAM with zero bus turnaround, 133 MHz operation (7.5 ns clock-to-data), pipelined outputs, and 4-word burst capability. It features synchronous address/control/data registers, individual byte write enables (BW1–BW4), and three chip enables for depth expansion - deployed in high-speed packet buffering, network switch fabric, and real-time DSP memory subsystems.
For engineers reviewing the 71V3556S133PFG8 datasheet, 71V3556S133PFG8 pinout, 71V3556S133PFG8 application, or 71V3556S133PFG8 equivalent, key selection criteria include ZBT™ timing compliance, 100-pin TQFP package compatibility, industrial temperature support (–40°C to +85°C), and JTAG boundary-scan readiness (optional IEEE 1149.1).
Technical Context
The 71V3556S133PFG8 implements a fully synchronous, rising-edge-triggered architecture with two-cycle read/write latency: address/control registration occurs on cycle N, data transfer completes on cycle N+2. Its internal burst counter supports linear or interleaved 4-word sequences controlled by the LBO pin, while ADV/LD determines whether external address load or internal counter advance occurs.
ZBT™ operation eliminates dead cycles between consecutive reads and writes via internally synchronized output buffer enable - removing need for external OE control. The device integrates three chip enables (CE1, CE2 active-low; CE2 active-high), sleep mode (ZZ), and optional JTAG test interface compliant with IEEE 1149.1.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.5 Mbit); supports 256K × 18-bit via pin-compatible variant |
| Clock Frequency | 133 MHz (7.5 ns clock period); guarantees full-speed operation at industrial temperature range |
| Access Time | 7.5 ns clock-to-data (tCD) - defines minimum time from CLK edge to valid output data |
| Supply Voltage | VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O); decoupling required per JEDEC TQFP layout guidelines |
| Burst Capability | 4-word burst (linear or interleaved); selected by static LBO input; no external counter needed |
| Operating Temperature | –40°C to +85°C (industrial grade); validated across full voltage and frequency range |
| Package | 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm, JEDEC MO-145 standard |
Pinout & Package
71V3556S133PFG8 is packaged in a JEDEC-standard 100-pin TQFP (PKG100), 14 mm × 20 mm body, 0.5 mm pitch, with exposed thermal pad (not electrically connected). Pin 1 marked by corner notch; top-side marking includes "71V3556S", speed grade "133", and package code "PFG".
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit synchronous address bus; A0–A16 used for 128K×36 config; A17 reserved/NC |
| CLK | Clock Input | Rising-edge-triggered master clock; all synchronous inputs referenced to this edge |
| R/W | Read/Write Control | Synchronous signal defining cycle type; sampled with ADV/LD to initiate load operation |
| ADV/LD | Advance Burst / Load Address | Controls burst counter increment (HIGH) or new address load (LOW); critical for burst sequencing |
| BW1–BW4 | Byte Write Enables | Four independent active-low enables for 9-bit bytes; allows partial-word writes without masking logic |
| CE1, CE2, CE2 | Chip Enables | Three enables (CE1/CE2 low-active, CE2 high-active) for hierarchical depth expansion and deselect control |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O Bus | 36-bit bidirectional synchronous data path; registered input/output with 2-cycle latency |
| ZZ | Sleep Mode Input | Active-high synchronous entry into low-power retention mode; preserves data with minimal current draw |
Key Features
| Feature | Design Value |
|---|---|
| ZBT™ Zero Bus Turnaround | Eliminates dead cycles between read/write transitions - enables continuous back-to-back memory access without bus idle time |
| Pipelined Output Enable | Internally synchronized OE replacement - removes requirement for external timing control of output drivers |
| 4-Word Burst Counter | On-chip counter generates linear or interleaved burst sequences; reduces address bus traffic and controller overhead |
| Individual Byte Write Control | Four dedicated BWx pins allow selective 9-bit byte writes - avoids full-word read-modify-write in partial updates |
| Three-Chip-Enable Architecture | Enables seamless depth expansion across multiple devices using CE1/CE2/CE2 logic combinations |
| Optional JTAG Boundary Scan | IEEE 1149.1-compliant test interface available in SA variants; supports production test and debug visibility |
Applications
| High-Speed Network Switching | Real-Time DSP Memory Buffer |
|---|---|
|
Use Scenario: Line-rate packet buffering in Layer 2/3 Ethernet switches handling 10 Gbps+ traffic. IC Role / Device Role / Timing Role: Primary packet descriptor and payload memory with deterministic 2-cycle latency and zero-turnaround burst reads/writes. Use Value: Sustains 133 MHz bus throughput with no inter-cycle gaps - directly enabling wire-speed forwarding without stall penalties. |
Use Scenario: Real-time audio/video processing pipeline requiring low-latency, high-bandwidth scratchpad memory. IC Role / Device Role / Timing Role: Dual-port-equivalent buffer for ping-pong frame storage with simultaneous read/write via ZBT™ protocol. Use Value: Eliminates bus arbitration delays between ADC capture and DSP compute stages - ensures sub-microsecond jitter control. |
| Industrial PLC Data Logging | Avionics Flight Control Buffer |
|
Use Scenario: High-reliability cyclic data logging in programmable logic controllers operating across –40°C to +85°C. IC Role / Device Role / Timing Role: Nonvolatile-backed SRAM buffer storing sensor history and event timestamps with guaranteed retention in sleep mode (ZZ). Use Value: Industrial temp rating and ZZ sleep mode reduce system power by >60% during idle intervals without data loss. |
Use Scenario: Safety-critical flight control surface actuation where memory access must meet DO-254 timing constraints. IC Role / Device Role / Timing Role: Deterministic, radiation-tolerant (qualified) SRAM for servo command queue with fixed 2-cycle latency. Use Value: Predictable tCD (7.5 ns) and absence of asynchronous paths ensure worst-case timing closure in FPGA-based control loops. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 71V3556SA133PFG8 | Includes IEEE 1149.1 JTAG boundary scan; otherwise identical timing, pinout, and electrical specs | Required for production testability in high-volume automated test environments | Select SA version when JTAG visibility is mandated for board-level test or debug traceability |
| AS7C3256B-133JCIN | 128K × 32-bit organization; no ZBT™ feature; 133 MHz max, but requires external OE control and has bus turnaround penalty | Suitable for cost-sensitive designs where burst efficiency and zero-turnaround are noncritical | Choose only if memory width reduction (32-bit vs 36-bit) and absence of ZBT™ are acceptable trade-offs |
Compared with 71V3556S133PFG8, the SA variant adds test infrastructure without altering performance or footprint, while the AS7C3256B sacrifices ZBT™ and byte-write granularity for lower unit cost and simpler interface - making it viable only in non-real-time buffering roles.
Availability
71V3556S133PFG8 is available at Aetrix Electronics and suitable for high-speed networking, industrial automation, and avionics applications requiring stable component supply, long-term lifecycle assurance, and industrial-grade temperature compliance.
Supply support for 71V3556S133PFG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.
The 71V3556S133PFG8 belongs to Renesas' ZBT™ SRAM product line, engineered specifically for zero-latency memory subsystems in high-throughput switching, routing, and real-time signal processing systems.
FAQ
What is the maximum operating frequency of the 71V3556S133PFG8?
The 71V3556S133PFG8 is rated for 133 MHz operation across the full industrial temperature range (–40°C to +85°C), delivering a 7.5 ns clock period and guaranteed 7.5 ns clock-to-data access time (tCD). This frequency is validated under worst-case VDD = 3.135 V, VDDQ = 3.135 V conditions with proper PCB layout and decoupling.
Does the 71V3556S133PFG8 support burst read and write operations?
Yes, the 71V3556S133PFG8 supports 4-word synchronous burst operations in both linear and interleaved sequences, controlled by the LBO pin. Burst initiation requires ADV/LD = HIGH after initial address load, and the internal counter advances automatically - eliminating need for external address generation logic during burst cycles.
How does the ZBT™ feature eliminate bus turnaround cycles in the 71V3556S133PFG8?
The 71V3556S133PFG8 implements ZBT™ by synchronizing output buffer enable internally - removing dependence on asynchronous OE control. This allows immediate transition from write to read (or vice versa) on consecutive clock edges without tri-state bus recovery time, achieving true zero-cycle turnaround in pipelined systems.
What is the function of the ZZ pin on the 71V3556S133PFG8?
The ZZ pin on the 71V3556S133PFG8 is a synchronous sleep mode input. When driven HIGH, it gates the internal clock and reduces power consumption to its lowest level while maintaining full data retention. Exit from sleep mode is synchronous and requires two clock cycles before normal operation resumes.
Is the 71V3556S133PFG8 pin-compatible with other members of the 71V3556/58 family?
Yes, the 71V3556S133PFG8 shares identical pinout and package (100-pin TQFP) with 71V3556SA133PFG8 and 71V3558S133PFG8. The 71V3558 variant differs only in memory organization (256K × 18), using the same address/control/data pin assignments and timing behavior - enabling drop-in replacement in width-flexible designs.
71V3556S133PFG8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 100-LQFP
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 133 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 4.2 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x14)
71V3556S133PFG8 FAQ
1.How can I place an order for 71V3556S133PFG8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3556S133PFG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3556S133PFG8 reliable?
The price and inventory of 71V3556S133PFG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3556S133PFG8 is usually 5 days.
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Once your 71V3556S133PFG8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3556S133PFG8?
For technical support, including 71V3556S133PFG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3556S133PFG8 requirements.
6.How does Aetrix verify that 71V3556S133PFG8 is sourced from the original manufacturer or authorized distributors?
All 71V3556S133PFG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3556S133PFG8 meets industry standards.
7.What is the process for return or replacement of 71V3556S133PFG8?
All 71V3556S133PFG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V3556S133PFG8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3556S133PFG8 part is unused and in its original packaging.
Return procedure for 71V3556S133PFG8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3556S133PFG8 Tags

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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology

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AT21CS01-STUM10-T
Microchip Technology

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AT24C02C-SSHM-T
Microchip Technology

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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics

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AT24CS02-SSHM-T
Microchip Technology

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93LC46BT-I/OT
Microchip Technology

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AT24C04C-SSHM-T
Microchip Technology

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24LC01BT-I/SN
Microchip Technology

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24AA02UIDT-I/OT
Microchip Technology

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AT24C08C-STUM-T
Microchip Technology
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