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Renesas 71V3556S133PFGI

Part No.:
71V3556S133PFGI
Manufacturer:
Renesas
Category:
Memory
Package:
100-LQFP
Datasheet:
Aetrix71V3556S133PFGI.pdf
Description:
IC SRAM 4.5MBIT PARALLEL 100TQFP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,436

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Product details

Overview

71V3556S133PFGI from IDT (now Renesas) is a 3.3V synchronous ZBT SRAM with 128K × 36-bit organization, 133 MHz clock speed, 3.5 ns clock-to-data access time, zero bus turnaround architecture, and pipelined outputs in a 100-pin TQFP package. It serves as high-speed buffer memory in network packet processors and telecom line cards where burst read/write efficiency and deterministic latency are critical.

For engineers reviewing the 71V3556S133PFGI datasheet, 71V3556S133PFGI pinout, 71V3556S133PFGI application, or 71V3556S133PFGI equivalent, key selection criteria include ZBT™ timing compliance, 4-word burst capability (linear/interleaved), individual byte write control (BW1–BW4), 3.3V I/O supply (VDDQ), and industrial temperature support (–40°C to +85°C).

Technical Context

The 71V3556S133PFGI implements a fully synchronous, positive-edge-triggered architecture with registered address, data, and control inputs. Its internal burst counter and ADV/LD-controlled address loading enable deterministic 4-cycle burst sequences without external sequencing logic.

ZBTTM eliminates dead cycles between read and write operations via internal synchronization of output buffer enable - removing need for OE timing coordination. The device supports three chip enables (CE1, CE2, CE2) for depth expansion and includes optional IEEE 1149.1 JTAG boundary scan (SA variant only; PFGI is S version, so JTAG not present).

Key Specifications

ParameterValue and Actual Design Meaning
Memory Organization128K × 36-bit (4.5 Mbit); fixed configuration for this part number
Max Clock Frequency133 MHz; defines maximum sustained transaction rate in pipelined systems
Clock-to-Data Access3.5 ns; guaranteed read data valid time after rising CLK edge
Supply VoltagesVDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O); separate power domains reduce noise coupling
Burst Capability4-word burst (linear or interleaved via LBO pin); reduces address bus traffic by 75% per burst
Operating Temperature–40°C to +85°C; qualified for industrial-grade embedded and telecom infrastructure use
Package100-pin TQFP (14 mm × 20 mm, JEDEC standard); surface-mount compatible with automated assembly

Pinout & Package

Packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch, lead-free and RoHS-compliant (PFGI suffix denotes industrial temp, green packaging).

Pin/TerminalCircuit RoleDesign Meaning
CLKClock inputPositive-edge-triggered master timing reference for all synchronous registers
A0–A16Address inputs17-bit address bus for 128K-depth addressing; sampled on rising CLK with ADV/LD low
R/WRead/Write controlSynchronous signal defining cycle type; determines data direction two cycles later
ADV/LDAddress load/burst advanceLow = load new external address; High = increment internal burst counter
BW1–BW4Byte write enablesFour independent active-low signals controlling 9-bit byte writes (I/O[0:7]+I/OP1 through I/O[24:31]+I/OP4)
CE1, CE2, CE2Chip enablesThree synchronous enables (CE1/CE2 active-low, CE2 active-high); any false deselects device in two cycles
OEOutput enableAsynchronous; tri-states outputs immediately when high - no timing coordination needed
I/O0–I/O31, I/OP1–I/OP4Data I/O36-bit bidirectional bus with registered input and output paths; supports full-word or byte-level writes
LBOBurst order selectStatic input selecting linear (LBO = low) or interleaved (LBO = high) burst sequence
ZZSleep modeActive-high synchronous input gating internal clock to minimize power while retaining data
VDD, VDDQ, VSSPower/groundVDD = 3.3V core supply; VDDQ = 3.3V I/O supply; VSS = common ground; decoupling required per pin

Key Features

FeatureDesign Value
ZBTTM Zero Bus TurnaroundEliminates dead cycles between consecutive reads and writes - enables back-to-back transactions at full clock rate
Internally synchronized OERemoves requirement for precise OE timing control; outputs automatically enabled/disabled per cycle
4-word burst with selectable orderReduces address bus activity by 75% per burst; LBO pin selects linear or interleaved sequence for cache-line alignment
Individual byte write controlEnables partial-word updates without read-modify-write; BW1–BW4 allow granular 9-bit writes
Three chip enables for depth expansionSupports seamless memory bank expansion using CE1/CE2/CE2 logic without external decoding
Sleep mode (ZZ)Reduces dynamic power consumption during idle periods while preserving memory contents

Applications

Network Packet BufferingTelecom Line Card Memory

Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in ASIC-based switch fabric.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency dual-port buffer with deterministic 3.5 ns read access and zero-turnaround write-read transitions.

Use Value: Enables line-rate packet processing at 10 Gbps+ by eliminating bus idle cycles between ingress/egress bursts.

Use Scenario: Frame buffering in SONET/SDH add-drop multiplexers requiring burst-aligned data transfer.

IC Role / Device Role / Timing Role: Synchronous SRAM providing 4-word burst reads/writes aligned to STS-192 frame boundaries.

Use Value: Matches telecom timing requirements with 133 MHz clock and industrial-temp reliability across chassis environments.

Baseband Processor CacheRadar Signal Processing Buffer

Use Scenario: Instruction/data cache for FPGA-accelerated wireless baseband processors in 4G/LTE radio units.

IC Role / Device Role / Timing Role: Pipelined SRAM interfacing directly to FPGA fabric with registered address/control/data paths.

Use Value: Eliminates timing closure challenges via fully registered I/O and predictable 2-cycle read/write latency.

Use Scenario: Real-time buffering of ADC samples in phased-array radar front-ends before FFT processing.

IC Role / Device Role / Timing Role: High-reliability memory storing time-critical pulse data with –40°C to +85°C operation.

Use Value: Guarantees data retention in sleep mode (ZZ) during radar dwell intervals, reducing system power.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
CY7C1356BV133BZC128K × 36-bit, 133 MHz, 3.3V, but uses QDR-II architecture with separate read/write ports and no ZBTTMRequires different controller logic for dual-port access; lacks burst counter and ADV/LD interfaceChoose for true simultaneous read/write; avoid if ZBT timing or burst simplicity is required
AS7C33128PFSI128K × 36-bit, 133 MHz, 3.3V, but asynchronous OE and no burst counter or ZBTTMNeeds external burst sequencing logic; higher latency due to non-pipelined outputsChoose for cost-sensitive designs without burst or zero-turnaround needs; verify timing margins

Compared with CY7C1356BV133BZC and AS7C33128PFSI, the 71V3556S133PFGI uniquely delivers zero bus turnaround, integrated burst counter, and simplified control (single R/W, ADV/LD, LBO) - reducing FPGA logic utilization and PCB routing complexity in burst-centric systems.

Availability

71V3556S133PFGI is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, and baseband processor cache applications requiring stable component supply, long-term industrial temperature support, and ZBT™-compliant timing behavior.

Supply support for 71V3556S133PFGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, and RF power solutions for high-performance computing and communications infrastructure.

The 71V3556S133PFGI belongs to IDT's ZBT SRAM product line, designed specifically for applications demanding deterministic low-latency memory access, zero bus turnaround, and burst efficiency in networking, telecom, and military/aerospace systems.

FAQ

What is the memory organization and total capacity of the 71V3556S133PFGI?

The 71V3556S133PFGI is a 128K × 36-bit synchronous SRAM, delivering 4,718,592 bits (4.5 Mbit) of storage. This configuration is fixed for the 71V3556S part number and differs from the 256K × 18-bit 71V3558S family member. All address bits A0–A16 are used, with no A17 connection in this variant.

Does the 71V3556S133PFGI support JTAG boundary scan?

No, the 71V3556S133PFGI does not support JTAG boundary scan. The "S" suffix indicates the standard version; JTAG is only available in the "SA" variant (e.g., 71V3556SA). Pins TMS, TDI, TCK, TDO, and TRST are No Connect (NC) on the 71V3556S133PFGI in TQFP packaging.

How does the ZBTTM feature eliminate dead cycles in the 71V3556S133PFGI?

ZBTTM eliminates dead cycles by internally synchronizing the output buffer enable signal - removing the need for external OE timing control. This allows immediate transition from write to read (or read to write) without bus turnaround delay, enabling back-to-back transactions at full 133 MHz clock rate in the 71V3556S133PFGI.

What is the function of the ADV/LD and LBO pins on the 71V3556S133PFGI?

ADV/LD controls whether the internal burst counter loads a new external address (ADV/LD = LOW) or increments (ADV/LD = HIGH). LBO selects burst order: LOW = linear sequence, HIGH = interleaved sequence. Both are synchronous inputs critical to burst operation in the 71V3556S133PFGI.

Can the 71V3556S133PFGI operate with only one chip enable asserted?

No - the 71V3556S133PFGI requires CE1 = LOW, CE2 = LOW, and CE2 = HIGH simultaneously to enable the device. If any one is violated (e.g., CE2 = LOW), the chip enters deselect mode within two clock cycles. This three-signal scheme enables flexible depth expansion without external logic in the 71V3556S133PFGI.

71V3556S133PFGI Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
100-LQFP
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR (ZBT)
Memory Size:
4.5Mbit
Memory Organization:
128K x 36
Memory Interface:
Parallel
Clock Frequency:
133 MHz
Write Cycle Time - Word, Page:
-
Access Time:
4.2 ns
Voltage - Supply:
3.135V ~ 3.465V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
100-TQFP (14x14)

71V3556S133PFGI FAQ

1.How can I place an order for 71V3556S133PFGI through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V3556S133PFGI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V3556S133PFGI reliable?

The price and inventory of 71V3556S133PFGI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3556S133PFGI is usually 5 days.

3.What payment methods are accepted for 71V3556S133PFGI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V3556S133PFGI transactions.

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4.How is shipping managed for 71V3556S133PFGI?

71V3556S133PFGI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V3556S133PFGI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V3556S133PFGI?

For technical support, including 71V3556S133PFGI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3556S133PFGI requirements.

6.How does Aetrix verify that 71V3556S133PFGI is sourced from the original manufacturer or authorized distributors?

All 71V3556S133PFGI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3556S133PFGI meets industry standards.

7.What is the process for return or replacement of 71V3556S133PFGI?

All 71V3556S133PFGI units undergo pre-shipment inspection (PSI). If there is an issue with 71V3556S133PFGI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V3556S133PFGI part is unused and in its original packaging.

Return procedure for 71V3556S133PFGI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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