Renesas 71V3556S166PFGI8
- Part No.:
- 71V3556S166PFGI8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
71V3556S166PFGI8.pdf
- Description:
- IC SRAM 4.5MBIT PARALLEL 100TQFP
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
71V3556S166PFGI8 from IDT (now Renesas) is a 128K × 36-bit, 4.5-Mbit, 3.3V synchronous ZBT™ SRAM with zero bus turnaround, 166 MHz operation (3.5 ns clock-to-data access), pipelined outputs, and 4-word burst capability. It features synchronous address/control/data registers, individual byte write enables (BW1–BW4), three chip enables (CE1/CE2/CE2), and supports industrial temperature range (–40°C to +85°C). It is used in high-speed packet buffering, network switching fabric, and telecom line cards where deterministic latency and bus efficiency are critical.
For engineers reviewing the 71V3556S166PFGI8 datasheet, 71V3556S166PFGI8 pinout, 71V3556S166PFGI8 application, or 71V3556S166PFGI8 equivalent, key selection criteria include ZBT™ timing compliance, TQFP-100 package compatibility, 3.3V core/I/O supply requirements, burst mode configuration (linear/interleaved via LBO), and JTAG boundary-scan support for testability in dense PCB layouts.
Technical Context
The 71V3556S166PFGI8 implements a fully synchronous, pipelined architecture with all address, control, and data signals registered on the positive clock edge. Its ZBT™ feature eliminates dead cycles between read/write transitions by overlapping bus turnaround with internal memory access, enabling continuous data flow at 166 MHz.
It integrates an on-chip 4-word burst counter controlled by ADV/LD and LBO, supporting both linear and interleaved sequences. Output enable (OE) is asynchronous, while all other inputs-including CEN, R/W, BWx, and CE pins-are synchronous with CLK, ensuring precise timing predictability in high-speed systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.5 Mbit); supports depth expansion via three chip enables. |
| Clock Frequency | 166 MHz; enables 3.5 ns clock-to-data access time for deterministic read latency. |
| Supply Voltage | VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O); separate power domains reduce noise coupling. |
| Burst Capability | 4-word burst (linear or interleaved); reduces address bus traffic and improves throughput in sequential access patterns. |
| Operating Temperature | –40°C to +85°C (industrial grade); validated for deployment in telecom infrastructure and industrial controllers. |
| Package | 100-pin TQFP (14 mm × 20 mm, JEDEC standard); compatible with automated SMT assembly and thermal management in multi-layer boards. |
| Interface Standard | IEEE 1149.1 JTAG boundary scan (optional); enables in-system test and debug without physical probe access. |
Pinout & Package
71V3556S166PFGI8 is packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), measuring 14 mm × 20 mm, with exposed pad for thermal dissipation and industrial-grade reflow compatibility.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CLK | Clock input | Positive-edge-triggered master timing reference; all synchronous operations aligned to rising edge. |
| A0–A17 | Address inputs | 18-bit address bus; A0–A16 used for 128K × 36 configuration; A17 reserved as NC in this variant. |
| R/W | Read/Write control | Synchronous signal defining cycle type; sampled with ADV/LD low to initiate load operation two cycles later. |
| ADV/LD | Advance burst / Load address | Controls burst counter increment (HIGH) or external address load (LOW); determines burst vs. random access behavior. |
| LBO | Linear/Interleaved Burst Order | Static input selecting burst sequence; LOW = linear, HIGH = interleaved; must remain stable during operation. |
| BW1–BW4 | Byte write enables | Four independent active-low enables for 9-bit bytes; allows partial writes without masking logic or extra control circuitry. |
| CE1, CE2, CE2 | Chip enables | Three enables (CE1/CE2 active-low, CE2 active-high) support flexible depth expansion and hierarchical memory mapping. |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional bus (32 data + 4 parity); fully registered I/O path ensures clean setup/hold margins at 166 MHz. |
| OE | Output enable | Asynchronous control; tri-states outputs immediately when HIGH-no clock dependency required for bus sharing. |
| CEN | Clock enable | Synchronous gate for CLK; suspends all internal register updates when HIGH, preserving state without clock gating complexity. |
| VDD, VDDQ, VSS | Power/ground | Dual-supply design: VDD powers core logic, VDDQ powers I/O buffers; separate VSS planes minimize ground bounce. |
| ZZ | Sleep mode | Active-high synchronous input that gates internal clock and reduces power consumption while retaining data. |
| TMS, TDI, TCK, TDO, TRST | JTAG interface | IEEE 1149.1-compliant test access port; TRST optional and internally pulled up; supports boundary-scan testing. |
Key Features
| Feature | Design Value |
|---|---|
| ZBT™ Zero Bus Turnaround | Eliminates idle cycles between read/write transitions, enabling back-to-back memory accesses at full 166 MHz bandwidth. |
| Pipelined output buffer | Internally synchronized OE elimination-output timing is fully clock-aligned, removing need for external OE timing control. |
| 4-word burst counter | Reduces address bus activity by 75% for sequential reads/writes; configurable linear or interleaved order via LBO pin. |
| Individual byte write control | Enables granular 9-bit writes without external byte-lane gating; BW1–BW4 can be tied low for full-word writes. |
| Three chip enables | Supports seamless depth expansion across multiple devices using CE1/CE2/CE2 logic combinations without glue logic. |
| Industrial temperature range | Rated for –40°C to +85°C operation with guaranteed timing and data retention-validated for base station and router deployments. |
Applications
| Network Packet Buffering | Telecom Line Card Memory |
|---|---|
|
Use Scenario: Storing ingress/egress packets in Ethernet switches and routers with strict latency budgets. IC Role / Device Role / Timing Role: High-speed, low-latency SRAM acting as first-level packet buffer with deterministic 3.5 ns read access and zero-turnaround writes. Use Value: Enables wire-speed forwarding at 10 Gbps+ by eliminating bus idle time between packet header and payload writes. |
Use Scenario: Frame buffering in SONET/SDH add-drop multiplexers requiring burst-mode access for ATM cell handling. IC Role / Device Role / Timing Role: Synchronous ZBT SRAM providing 4-word interleaved bursts aligned to cell boundaries for efficient DMA transfers. Use Value: Reduces external controller overhead by 75% per burst sequence, improving overall system throughput and reducing CPU load. |
| High-Performance Computing Cache | Industrial PLC Data Logging |
|
Use Scenario: Local scratchpad memory for FPGA-based co-processors performing real-time FFT or filtering. IC Role / Device Role / Timing Role: Pipelined SRAM interfacing directly to FPGA fabric with registered address/data paths for timing closure at 166 MHz. Use Value: Guarantees setup/hold compliance without external delay elements, simplifying PCB layout and timing analysis. |
Use Scenario: Reliable data capture in programmable logic controllers operating in harsh factory environments. IC Role / Device Role / Timing Role: Industrial-grade SRAM with sleep mode (ZZ) and wide temperature support for unattended long-term logging. Use Value: Maintains data integrity during brownouts via ZZ-controlled low-power retention, extending backup battery life. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1362BV33-166BAXI | 128K × 36-bit QDR SRAM; 166 MHz, but uses differential clock and separate read/write data buses. | Requires QDR controller interface; not ZBT-compatible-unsuitable for legacy ZBT bus protocols. | Select only if migrating to QDR architecture; incompatible pinout and timing model versus 71V3556S166PFGI8. |
| AS7C3256A-166JCIN | 128K × 32-bit sync SRAM; no ZBT feature, no burst counter, no JTAG, and only two chip enables. | Lacks zero-turnaround and burst capability-requires additional glue logic for burst emulation and bus arbitration. | Use only in cost-sensitive, non-burst applications where ZBT timing and JTAG are unnecessary. |
Compared with CY7C1362BV33-166BAXI and AS7C3256A-166JCIN, the 71V3556S166PFGI8 uniquely delivers ZBT™-optimized bus efficiency, integrated burst sequencing, and industrial-grade JTAG testability in a drop-in TQFP-100 footprint-critical for maintaining legacy system compatibility while meeting telecom timing SLAs.
Availability
71V3556S166PFGI8 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, high-performance computing cache, and industrial PLC data logging requiring stable component supply across extended product lifecycles.
Supply support for 71V3556S166PFGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology), now part of Renesas Electronics, is a semiconductor company specializing in high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.
The 71V3556S166PFGI8 belongs to IDT's ZBT™ SRAM product line, engineered specifically for zero-latency bus turnaround in high-speed networking and telecom infrastructure where deterministic memory access is mandatory.
FAQ
What is the memory organization and total capacity of the 71V3556S166PFGI8?
The 71V3556S166PFGI8 is configured as 128K × 36 bits, delivering a total capacity of 4,718,592 bits (4.5 Mbit). This organization supports 36-bit data paths common in network processors and DSPs, and its address space uses A0–A16 (17 bits) with A17 unused in this variant.
Does the 71V3556S166PFGI8 support burst mode, and how is it configured?
Yes, the 71V3556S166PFGI8 supports 4-word burst mode via its on-chip counter. Burst behavior is selected using the LBO pin: LOW enables linear addressing, HIGH enables interleaved addressing. The ADV/LD pin controls whether the counter advances (HIGH) or loads a new external address (LOW).
What is the role of the ZZ pin on the 71V3556S166PFGI8, and how does it affect power consumption?
The ZZ pin on the 71V3556S166PFGI8 is a synchronous sleep mode input. When driven HIGH, it gates the internal clock and reduces dynamic power consumption to its minimum while guaranteeing data retention. This feature is essential for energy-constrained industrial and telecom applications requiring low standby power.
Is JTAG boundary scan supported on the 71V3556S166PFGI8, and which pins are involved?
Yes, the 71V3556S166PFGI8 supports IEEE 1149.1-compliant JTAG boundary scan. Pins TMS, TDI, TCK, TDO, and optional TRST are dedicated to this function. In the TQFP-100 package, these appear on pins A10, A11, A12, A13, and A14 respectively, with internal pull-ups on all except TDO.
How does the ZBT™ feature of the 71V3556S166PFGI8 improve system-level bus efficiency?
The ZBT™ (Zero Bus Turnaround) feature of the 71V3556S166PFGI8 eliminates idle cycles between consecutive read and write operations. By overlapping bus direction control with memory access, it enables back-to-back transactions at full 166 MHz-increasing effective bandwidth by up to 30% compared to conventional synchronous SRAMs in burst-intensive applications like packet switching.
71V3556S166PFGI8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 100-LQFP
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 166 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x14)
71V3556S166PFGI8 FAQ
1.How can I place an order for 71V3556S166PFGI8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3556S166PFGI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3556S166PFGI8 reliable?
The price and inventory of 71V3556S166PFGI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3556S166PFGI8 is usually 5 days.
3.What payment methods are accepted for 71V3556S166PFGI8?
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71V3556S166PFGI8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V3556S166PFGI8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3556S166PFGI8?
For technical support, including 71V3556S166PFGI8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3556S166PFGI8 requirements.
6.How does Aetrix verify that 71V3556S166PFGI8 is sourced from the original manufacturer or authorized distributors?
All 71V3556S166PFGI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3556S166PFGI8 meets industry standards.
7.What is the process for return or replacement of 71V3556S166PFGI8?
All 71V3556S166PFGI8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V3556S166PFGI8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3556S166PFGI8 part is unused and in its original packaging.
Return procedure for 71V3556S166PFGI8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3556S166PFGI8 Tags

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