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Renesas 71V3556SA100BG
- Part No.:
- 71V3556SA100BG
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V3556SA100BG.pdf
- Description:
- IC SRAM 4.5MBIT PAR 119PBGA
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
71V3556SA100BG from Renesas is a 3.3V, 128K × 36-bit (4.5 Mbit) synchronous ZBT™ SRAM with zero bus turnaround, 100 MHz clock operation (10 ns cycle time), pipelined outputs, and 4-word burst capability. It features synchronous address/control/data registers, individual byte write enables (BW1–BW4), and JTAG boundary scan (IEEE 1149.1). Used in high-speed networking buffers and packet-switching ASIC/FPGA interfaces.
For engineers reviewing the 71V3556SA100BG datasheet, 71V3556SA100BG pinout, 71V3556SA100BG application, or 71V3556SA100BG equivalent, key selection criteria include ZBT™ bus efficiency, 100-pin TQFP packaging, industrial temperature support (–40°C to +85°C), 3.3V I/O compatibility, and JTAG testability for board-level validation.
Technical Context
The 71V3556SA100BG implements a fully synchronous, clock-edge-triggered architecture with dual-register pipeline stages: input registers capture address, R/W, ADV/LD, BWx, and CE signals on the rising CLK edge, while output registers drive data two cycles later. Its ZBT™ feature eliminates dead cycles between read/write transitions by overlapping bus control and data transfer timing.
It integrates an on-chip burst counter with linear/interleaved mode selectable via LBO, supports depth expansion using three chip enables (CE1, CE2, CE2), and includes optional IEEE 1149.1 JTAG for boundary scan testing - available only in BGA variants like the 100BG package.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K × 36-bit (4.5 Mbit); supports high-bandwidth data paths in telecom line cards and switch fabric buffers. |
| Clock Frequency | 100 MHz (10 ns cycle time); enables deterministic 2-cycle latency for pipelined memory access in FPGA co-processor systems. |
| Access Time | 3.5 ns clock-to-data (tCD); guarantees sub-4 ns valid output timing for tight setup/hold margins in 10 Gbps+ datapaths. |
| Supply Voltage | VDD = 3.3 V ±5%, VDDQ = 3.3 V ±5%; compatible with standard 3.3V logic families and avoids level-shifting in mixed-voltage designs. |
| Operating Temperature | –40°C to +85°C industrial grade; validated for deployment in uncontrolled ambient environments like base station cabinets. |
| Burst Capability | 4-word interleaved or linear burst; reduces address bus overhead and improves throughput in sequential packet buffer reads/writes. |
| JTAG Support | IEEE 1149.1 compliant with TMS/TDI/TCK/TDO/TRST; enables automated PCB test coverage without external probing. |
Pinout & Package
Packaged in a JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pin 64 supports ZZ (sleep mode) on latest die revision; pins 14/16/66 tolerate VIH-level inputs without direct VDD connection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | Synchronous 18-bit address bus; A0–A16 used for 128K×36 configuration; A17 unused but present for family pin compatibility. |
| CLK | Clock Input | Rising-edge-triggered master clock; all synchronous operations referenced to this edge; OE remains asynchronous. |
| R/W | Read/Write Control | Synchronous signal defining load-cycle direction; sampled with ADV/LD low to initiate read/write; determines burst type at cycle start. |
| ADV/LD | Advance Burst / Load Address | Synchronous control: low loads new external address; high increments internal burst counter - critical for burst sequence continuity. |
| BW1–BW4 | Byte Write Enables | Active-low per-byte controls for I/O[0:7]/I/OP1 through I/O[24:31]/I/OP4; enables partial writes without masking logic in controller. |
| CE1, CE2, CE2 | Chip Enables | Three independent enables (CE1/CE2 active-low, CE2 active-high); allow flexible depth expansion and hierarchical memory decoding. |
| LBO | Linear/Interleaved Burst Order | Static input selecting burst pattern; low = linear (0,1,2,3), high = interleaved (0,2,1,3); must remain stable during burst execution. |
| TMS, TDI, TCK, TDO, TRST | JTAG Test Interface | IEEE 1149.1 boundary scan signals; TRST is optional asynchronous reset; all except TDO are inputs with internal pull-ups. |
| VDD, VDDQ, VSS | Power & Ground | VDD = 3.3V core supply; VDDQ = 3.3V I/O supply (separate for noise isolation); VSS = common ground; pin 64 doubles as ZZ in latest revision. |
Key Features
| Feature | Design Value |
|---|---|
| ZBT™ Zero Bus Turnaround | Eliminates dead cycles between consecutive read/write operations, enabling continuous 100% bus utilization in burst-intensive traffic shaping. |
| Internally Synchronized Output Enable | OE is asynchronous but internally synchronized; removes need for external OE timing control and simplifies interface to clock-domain-crossing logic. |
| Pipelined Input/Output Registers | Two-stage register pipeline ensures predictable 2-clock-cycle latency and relaxes PCB trace length matching requirements for high-speed routing. |
| Individual Byte Write Control | BW1–BW4 allow granular 9-bit byte writes without external byte-lane gating, reducing FPGA resource usage in protocol-aware buffer managers. |
| Three-Chip-Enable Architecture | CE1 (active-low), CE2 (active-low), CE2 (active-high) provide flexible memory banking and enable seamless depth expansion up to 3× density. |
| JTAG Boundary Scan (IEEE 1149.1) | Full scan chain support with TRST option enables production test coverage of SRAM interconnects without functional test vectors. |
Applications
| Telecom Line Card Buffer | Network Packet Switch Fabric |
|---|---|
Use Scenario: Storing incoming/outgoing Ethernet frames in OC-192/STM-64 line interface modules. IC Role / Device Role / Timing Role: High-throughput, low-latency frame buffer with ZBT™-enabled back-to-back read/write for cut-through switching. Use Value: 100 MHz operation and 4-word burst reduce memory transaction overhead by >30% vs. conventional SRAM in 10 Gbps line rates. |
Use Scenario: Temporary storage of packet headers and payload fragments in multi-port switch ASICs. IC Role / Device Role / Timing Role: Synchronous burst-access buffer interfacing directly to SerDes PHYs and packet classification engines. Use Value: Pipelined outputs and 3.5 ns tCD ensure deterministic timing alignment with 100 MHz system clocks in QoS scheduling pipelines. |
| FPGA Co-Processor Memory | Industrial Real-Time Controller Cache |
Use Scenario: Offloading burst-intensive data reordering tasks from Xilinx Ultrascale+ or Intel Stratix 10 FPGAs. IC Role / Device Role / Timing Role: External high-speed scratchpad memory with JTAG visibility for debug and firmware update staging. Use Value: JTAG boundary scan enables in-system verification of FPGA-to-SRAM interconnect integrity without physical probe access. |
Use Scenario: Deterministic buffering of sensor fusion data streams in rail signaling or wind turbine pitch control systems. IC Role / Device Role / Timing Role: Industrial-grade SRAM providing guaranteed data retention during voltage dips and thermal cycling. Use Value: –40°C to +85°C rating and ZZ sleep mode (pin 64) support fail-safe operation and power budgeting in harsh environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1362BV33-100BG | 128K × 36-bit, 100 MHz, no JTAG; uses different burst counter implementation and lacks ZZ sleep mode. | Targeted at cost-sensitive telecom gear where boundary scan is not required for production test. | Select when JTAG is unnecessary and legacy Cypress design reuse is prioritized over sleep-mode power savings. |
| AS7C33128PFSI-100BIN | 128K × 36-bit, 100 MHz, no ZBT™; supports linear burst only; no ADV/LD or LBO pins - simpler control interface. | Suitable for non-burst-intensive embedded controllers where deterministic latency matters more than bus efficiency. | Choose when ZBT™ bus turnaround optimization is not needed and design favors minimal pin count and reduced control logic complexity. |
Compared with CY7C1362BV33-100BG and AS7C33128PFSI-100BIN, the 71V3556SA100BG uniquely delivers ZBT™-enabled zero-dead-cycle operation, integrated JTAG for testability, and industrial-grade sleep mode - making it optimal for high-reliability, high-throughput infrastructure applications requiring both performance and verifiability.
Availability
71V3556SA100BG is available at Aetrix Electronics and suitable for telecom line card buffers, network packet switch fabrics, FPGA co-processor memory, industrial real-time controllers, and high-speed instrumentation requiring stable component supply across extended temperature ranges.
Supply support for 71V3556SA100BG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The 71V3556SA100BG belongs to Renesas' ZBT™ SRAM product line, engineered specifically for high-speed, low-latency data buffering in telecom and networking equipment where bus efficiency and deterministic timing are critical.
FAQ
What is the memory organization and total capacity of the 71V3556SA100BG?
The 71V3556SA100BG is configured as 128K × 36-bit, delivering 4,718,592 bits (4.5 Mbit) of synchronous SRAM. This organization supports 36-bit wide data paths ideal for parallel bus interfaces in networking ASICs and FPGA-based systems, with full addressability across all 128K words using A0–A16.
Does the 71V3556SA100BG support JTAG boundary scan, and which pins implement it?
Yes, the 71V3556SA100BG supports IEEE 1149.1-compliant JTAG boundary scan. Pins TMS, TDI, TCK, TDO, and optional TRST are dedicated to this function and appear on the 100-pin TQFP package. TRST has an internal pull-up and may be left floating if not used; all JTAG pins except TDO have internal pull-ups.
How does the ZBT™ feature improve bus efficiency in the 71V3556SA100BG?
The ZBT™ (Zero Bus Turnaround) feature in the 71V3556SA100BG eliminates dead cycles between alternating read and write operations by overlapping bus control and data transfer timing. This allows back-to-back transactions without idle cycles, achieving up to 100% bus utilization in burst-intensive applications such as packet buffering and frame reassembly.
What is the role of the ADV/LD and LBO pins in burst operation of the 71V3556SA100BG?
ADV/LD controls burst initiation: sampled low to load a new external address, sampled high to increment the internal burst counter. LBO selects burst order - low enables linear (0,1,2,3), high enables interleaved (0,2,1,3). Both signals must remain static during burst execution to prevent counter misalignment in the 71V3556SA100BG.
Can the 71V3556SA100BG operate in low-power sleep mode, and how is it enabled?
Yes, the 71V3556SA100BG supports sleep mode via the ZZ pin (pin 64 on latest die revision). When ZZ is driven high, the internal clock is gated and power consumption drops to minimum while retaining memory contents. ZZ has an internal pulldown, so it defaults to active-low operation unless explicitly asserted high.
71V3556SA100BG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 4.5Mbit
- Memory Organization:
- 128K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 100 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V3556SA100BG FAQ
1.How can I place an order for 71V3556SA100BG through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V3556SA100BG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V3556SA100BG reliable?
The price and inventory of 71V3556SA100BG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V3556SA100BG is usually 5 days.
3.What payment methods are accepted for 71V3556SA100BG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V3556SA100BG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V3556SA100BG?
71V3556SA100BG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V3556SA100BG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V3556SA100BG?
For technical support, including 71V3556SA100BG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V3556SA100BG requirements.
6.How does Aetrix verify that 71V3556SA100BG is sourced from the original manufacturer or authorized distributors?
All 71V3556SA100BG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V3556SA100BG meets industry standards.
7.What is the process for return or replacement of 71V3556SA100BG?
All 71V3556SA100BG units undergo pre-shipment inspection (PSI). If there is an issue with 71V3556SA100BG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V3556SA100BG part is unused and in its original packaging.
Return procedure for 71V3556SA100BG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V3556SA100BG Tags
-
M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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